Abstract: A device including a plurality of interconnected concentric coplanar diodes.

Abstract: A method of making a display device, the method including fabricating a matrix of light-emitting diodes (LEDs), each including electrodes accessible from a back face of the matrix and light-emitting surfaces accessible from a front face of the matrix; securing, onto the back face of the matrix, a stack of layers including at least one semiconducting layer, a gate dielectric layer, and a layer of gate conducting material; and starting from the stack of layers, fabricating an electronic control circuit electrically coupled to the electrodes, including fabricating field-effect transistors (FETs) including active zones and gates, the active zones being formed in the at least one semiconducting layer, and the gates being formed in the gate dielectric layer and in the layer of gate conducting material.

Abstract: A method of manufacturing elementary chips of a LED-based emissive display device, each chip including an inorganic semiconductor LED, a circuit for controlling the LED, and a plurality of areas of connection to an external device arranged on a connection surface of the chip.

Abstract: The invention relates to an optoelectronic light-emitting device (1), including: at least one light-emitting diode (40) having an emitting surface (44) adapted to emit so-called excitation luminous radiation; and a photoluminescent material (31) that coats the emitting surface (44), the photoluminescent material containing photoluminescent particles adapted to convert said excitation luminous radiation through the emitting surface (44) at least in part into so-called photoluminescence luminous radiation. The optoelectronic device includes at least one photodiode (50) adjacent the light-emitting diode (40) having a receiving surface (54) coated by the photoluminescent material (31) and adapted to detect at least part of the excitation radiation and/or the photoluminescence radiation coming from the photoluminescent material (31) through the receiving surface.

Abstract: A device including a plurality of interconnected concentric coplanar diodes.

Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

Abstract: A diode including a vertical stack of first and second semiconductor regions having opposite conductivity types, and a first electrode for biasing its first region arranged in a trench extending from the surface of the second region opposite to the first region, the first electrode including, in top view, the following conductive elements: a polygonal ring; for each vertex of the polygonal ring, a first rectilinear bar extending between the vertex and the center of the ring, substantially along a direction running from the vertex to the center of the ring; and for each first bar, a plurality of second rectilinear bars extending from the first bar substantially parallel to the sides of the ring, starting from the vertex forming the origin of the first bar.

Abstract: A device including a plurality of interconnected concentric coplanar diodes.

Abstract: An optoelectronic device including a light emitting component and a field-effect transistor, the optoelectronic device including a first semiconductor layer made of a III-V or II-VI compound doped a first conductivity type; an active layer of the light-emitting component; and a second semiconductor layer made of the III-V or III-VI compound doped a second conductivity type opposite the first type, the active layer being sandwiched between the first and second semiconductor layers, wherein the channel of the field-effect transistor is located in the first semiconductor layer, the first semiconductor layer being uninterrupted between the field-effect transistor and the lightemitting component.

Abstract: A method of manufacturing elementary chips of a LED-based emissive display device, each chip including an inorganic semiconductor LED, a circuit for controlling the LED, and a plurality of areas of connection to an external device arranged on a connection surface of the chip.

Abstract: A diode including: first and second doped semi-conductor portions forming a p-n junction, a first part of the first portion being arranged between a second part of the first portion and the second portion; dielectric portions covering side walls of the second portion and the first part of the first portion; a first electrode arranged against outer side walls of the dielectric portions and against side walls of the second part of the first portion, electrically connected to the first portion only by contact with said side walls, and passing through the entire thickness of the first portion; a second optically reflecting electrode electrically connected to the second portion such that the second portion is arranged between the second electrode and the first portion.

Abstract: An optoelectronic device provided with a support including a face having at least one concave or convex portion, the amplitude of the sagitta of said portion being higher than 1/20th of the chord of the portion, and light-emitting diodes arranged on the portion, each light-emitting diode including a cylindrical, conical or frustoconical semiconductor element in contact with the portion, the amplitude of the sagitta of the contact surface between each semiconductor element and the portion being lower than or equal to 0.5 um.

Abstract: A method of making a display device comprising at least implementation of the following steps: fabricate a matrix of LEDs each comprising electrodes accessible from a back face of the LED matrix and light emitting surfaces on a front face of the LED matrix; securing a stack of layers comprising at least one semiconducting layer, a gate dielectric layer and a layer of gate conducting material, onto the back face of the LED matrix; starting from the stack of layers, fabricate an electronic control circuit electrically coupled to the electrodes of the LEDs, including the fabrication of FET transistors of which active zones are formed in the semiconducting layer and of which the gates are formed in the gate dielectric layer and in the layer of gate conducting material.

Abstract: A device including a plurality of interconnected concentric coplanar diodes.

Abstract: A diode including a vertical stack of first and second semiconductor regions having opposite conductivity types, and a first electrode for biasing its first region arranged in a trench extending from the surface of the second region opposite to the first region, the first electrode including, in top view, the following conductive elements: a polygonal ring; for each vertex of the polygonal ring, a first rectilinear bar extending between the vertex and the center of the ring, substantially along a direction running from the vertex to the center of the ring; and for each first bar, a plurality of second rectilinear bars extending from the first bar substantially parallel to the sides of the ring, starting from the vertex forming the origin of the first bar.

Abstract: A light-emitting device including a light-emitting diode including an n-doped InGaN layer and a p-doped GaN layer, and an active zone including a number m of InGaN-emitting layers each one arranged between two InGaN barrier layers, of which the indium compositions of the emitting layers are different and are greater on the side of the n-doped InGaN layer than on the side of the p-doped GaN layer, and of which the indium compositions of the barrier layers are different and which are greater on the side of the n-doped InGaN layer than on the side of the p-doped GaN layer. An electric power supply supplies the diode with a periodic signal. A controller of the power supply can alter the peak value of the periodic signal according to a spectrum of the light emitted.

Abstract: An optoelectronic device is provided, including light-emitting diodes arranged such that: N diodes of said plurality, where N ?2, are connected in series and are configured to be forward-biased, and at least one diode is connected in parallel to the N diodes and is configured to be reverse-biased and to form a Zener diode, wherein a sum of threshold voltages of the N diodes is less than a breakdown voltage of the Zener diode, and the light-emitting diodes include a stack of semiconductive portions including a first conductivity-type doped portion, a second conductivity-type doped portion opposite the first type, and a first intermediate portion doped according to the first type and being disposed between said first and second portions and having a doping level such that the breakdown voltage is greater than the sum of the threshold voltages of each of the N diodes.

Abstract: An optoelectronic device including a carrier having a face including flat butt-jointed facets inclined in relation to each other; seeds, mainly made of a first compound selected from the group including the compounds III-V, the compounds II-VI, and the compounds IV, in contact with the carrier in the region of at least some of the joints between the facets; and conical or frustoconical, wire-like three-dimensional semiconductor elements of a nanometric or micrometric size, mainly made of the first compound, on the seeds.

Abstract: The invention relates to a method of manufacturing optoelectronic devices including light-emitting diodes, including the steps of: a) forming a first integrated circuit chip including light-emitting diodes; b) bonding a second integrated chip to a first surface of the first chip; c) decreasing the thickness of the first chip on the side opposite to the first surface to form a second surface opposite to the first surface; d) bonding, to the second surface, a cap including a silicon wafer provided with recesses opposite the light-emitting diodes; e) decreasing the thickness of the second chip; f) decreasing the thickness of the silicon wafer before step d) or after step e), each recess being filled with a photoluminescent material; and g) sawing the structure obtained at step f) into a plurality of separate optoelectronic devices.

Abstract: An optoelectronic device including an array of light-emitting diodes and photoluminescent blocks opposite at least part of the light-emitting diodes, each light-emitting diode having a lateral dimension smaller than 30 ?m, each photoluminescent block including semiconductor crystals having an average size smaller than 1 ?m, dispersed in a binding matrix.