Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: The invention provides a chemical mechanical polishing and pad dressing method based on differing the rotational of a pad dresser, head, and/or polishing pad to improve center removal slow profiling.

Abstract: A chemical mechanical processing apparatus includes a polishing pad capable to polish a substrate; a stepped retaining having an inner side, a bottom side, and an open region, the open region extending radially outward from the inner side and upward from the bottom side, the open region providing space for pad rebound, the open region further having a plurality of tips to hold a substrate in position during rotation of the substrate against the polishing pad, the stepped retaining ring capable to rotate the substrate against the polishing pad; and a dispenser capable to dispense a slurry onto the pad.

Abstract: An apparatus (100) and method are provided for polishing a substrate (105) that achieves a high-planarization uniformity. In one embodiment, the apparatus (100) includes a subcarrier (165) with a lower surface (170), a flexible member (245) extending across the lower surface, and a control-insert (280) disposed between the flexible member and the lower surface. The flexible member (245) has a surface adapted to press the substrate against a polishing pad. The control-insert (280) inhibits non-planar polishing by providing a variable removal rate across the substrate surface. The control-insert (245) can be an annular ring (280A) located near an outer edge of the flexible member (245) to control the removal rate near an edge of the substrate (105), or a disk (280B) near a center (290) of the flexible member to control the removal rate near a center of the substrate. The removal rate can be further controlled by varying a cross-sectional thickness of the control-insert (245).

Abstract: An apparatus and method for planarizing a substrate are provided. The apparatus (101) includes a subcarrier (354) having an outer surface (378) with an annular first membrane (376) coupled thereto. The first membrane (376) has a receiving surface (380) adapted to receive the substrate (356) thereon, and a lip (382) adapted to seal with a backside of the substrate to define a first chamber (384) therebetween. A second membrane (386) positioned above the first membrane (376), and coupled to the subcarrier (354) defines a second chamber (388). During a polishing operation pressurized fluid introduced into the second chamber (388) causes it to expand outward to exert a force on a portion of the backside of the substrate (356), thereby pressing a predetermined area (392) of the surface of the substrate against the polishing pad. The predetermined area (392) is directly proportional to the pressure of the fluid introduced into the second chamber (388).

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: A polishing apparatus (100) and method for polishing and planarizing a substrate (105) is provided that achieves a high-planarization uniformity across the substrate. In one embodiment, the polishing head (140) includes a carrier (155), a subcarrier (160) carried by the carrier and adapted to hold the substrate (105) during a polishing operation and a retaining ring (170) rotatably disposed about the subcarrier. The retaining ring (170) has a lower surface (205) that is substantially flush with the surface of the substrate (105) and is in contact with a polishing surface (125) during the polishing operation. The retaining ring (170) is capable of rotating relative to the substrate (105) held on the subcarrier (160) to inhibit non-planar polishing of the surface of the substrate. In another embodiment, the polishing head (140) further includes a backing ring (210) in a facing relationship with an upper surface (255) of the retaining ring (170) and separated from the retaining ring by a bearing (260).

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: A system (100) and method for polishing and planarizing a substrate (105) is provided that reduces non-uniformities in the removal of material from the edge of the substrate due to a rebound effect. In one embodiment system (100) includes a polishing head (140) having a carrier (155), a subcarrier (160) carried by the carrier and adapted to hold the substrate during a polishing operation, and a retaining ring (170) having an inner edge (220) disposed about the subcarrier. A lower surface (210) of the retaining ring (170) is in contact with a polishing surface (125) during the polishing operation, and has at least one annular recess (215) formed therein to enable the polishing surface compressed under the retaining ring to rebound into the annular recess, thereby reducing the rebound effect and inhibiting non-planar polishing of the surface of the substrate (105).

Abstract: The invention provides structure and method for achieving a uniformly polished or planarized substrate such as a semiconductor wafer including achieving substantially uniform polishing between the center of the semiconductor wafer and the edge of the wafer. In one aspect the invention provides a polishing apparatus including a housing, a carrier for mounting a substrate to be polished, a retaining ring circumscribing the carrier for retaining the substrate, a first coupling attaching the retaining ring to the carrier such that the retaining ring may move relative to the carrier, a second coupling attaching the carrier to the housing such that the carrier may move relative to the housing, the housing and the first coupling defining a first pressure chamber to exert a pressure force against the retaining ring, and the housing and the second coupling defining a second pressure chamber to exert a pressure force against the subcarrier. In one embodiment, the couplings are diaphragms.

Abstract: An apparatus (100) and method are provided for polishing a substrate (105) that achieves a high-planarization uniformity. In one embodiment, the apparatus (100) includes a subcarrier (165) with a lower surface (170), a flexible member (245) extending across the lower surface, and a control-insert (280) disposed between the flexible member and the lower surface. The flexible member (245) has a surface adapted to press the substrate against a polishing pad. The control-insert (280) inhibits non-planar polishing by providing a variable removal rate across the substrate surface. The control-insert (245) can be an annular ring (280A) located near an outer edge of the flexible member (245) to control the removal rate near an edge of the substrate (105), or a disk (280B) near a center (290) of the flexible member to control the removal rate near a center of the substrate. The removal rate can be further controlled by varying a cross-sectional thickness of the control-insert (245).

Abstract: An apparatus and method for planarizing a substrate are provided. The apparatus (101) includes a subcarrier (354) having an outer surface (378) with an annular first membrane (376) coupled thereto. The first membrane (376) has a receiving surface (380) adapted to receive the substrate (356) thereon, and a lip (382) adapted to seal with a backside of the substrate to define a first chamber (384) therebetween. A second membrane (386) positioned above the first membrane (376), and coupled to the subcarrier (354) defines a second chamber (388). During a polishing operation pressurized fluid introduced into the second chamber (388) causes it to expand outward to exert a force on a portion of the backside of the substrate (356), thereby pressing a predetermined area (392) of the surface of the substrate against the polishing pad. The predetermined area (392) is directly proportional to the pressure of the fluid introduced into the second chamber (388).

Abstract: The invention provides structure and method for achieving a uniformly polished or planarized substrate such as a semiconductor wafer including achieving substantially uniform polishing between the center of the semiconductor wafer and the edge of the wafer. In one aspect the invention provides a polishing apparatus including a housing, a carrier for mounting a substrate to be polished, a retaining ring circumscribing the carrier for retaining the substrate, a first coupling attaching the retaining ring to the carrier such that the retaining ring may move relative to the carrier, a second coupling attaching the carrier to the housing such that the carrier may move relative to the housing, the housing and the first coupling defining a first pressure chamber to exert a pressure force against the retaining ring, and the housing and the second coupling defining a second pressure chamber to exert a pressure force against the subcarrier. In one embodiment, the couplings are diaphragms.

Abstract: A process is provided for polishing a composite comprised of an insulating layer, a metal and titanium in which the composite is polished in a standard polishing machine using an aqueous slurry comprising submicron abrasive particles, an iodate, and a peroxide. Another process is provided in which peroxide is added to the aqueous slurry only when a titanium or titanium nitride layer is being polished. Further the invention also comprises the addition of a base to the slurry stream exiting the polishing machine to bring the pH of the used slurry to about 7 or higher.

Abstract: Aqueous slurries are provided, which are useful for the chemical-mechanical polishing of substrates comprising titanium, comprising: water, submicron abrasive particles, an oxidizing agent, and a mono-, di-, or tri-substituted phenol wherein at least one of the substituted functional groups is polar. Optionally the compositions may also comprise a compound to suppress the rate of removal of silica. The slurries are useful on substrates which also comprise tungsten, aluminum or copper.

Abstract: An aqueous slurry is provided for polishing or planarizing a work piece which contains a metal, the solids portion of said slurry being comprised of 1 to 50 percent by weight of submicron alpha-alumina, the remainder of the solids being of a substantially less abrasive composition chosen from the group consisting of aluminum hydroxides, gamma-alumina, delta-alumina, amorphous alumina, and amorphous silica. Also provided is a method for polishing the surface of a work piece which contains a metal wherein said aqueous slurry is used as the polishing composition during chemical-mechanical polishing.