Abstract: A memory device package encloses two separate die, one being a standard nonvolatile memory integrated circuit (“IC”) die, and the other being any suitable authentication IC die. Either die may be stacked upon the other, or the die may be placed side-by-side. The external contacts may correspond to the power and signal requirements of the standard nonvolatile memory IC die so that the pin-out of the memory device package may present a standard pinout. The power and signal requirements of the authentication IC die may be satisfied with some or all of the pins for the nonvolatile memory integrated circuit die, or with other unused pins of the device package. One or more additional external contacts may be added exclusively for the authentication integrated circuit die. One or more signals may be dedicated as between the standard nonvolatile memory IC die and the authentication IC die.

Abstract: A memory device package encloses two separate die, one being a standard nonvolatile memory integrated circuit (“IC”) die, and the other being any suitable authentication IC die. Either die may be stacked upon the other, or the die may be placed side-by-side. The external contacts may correspond to the power and signal requirements of the standard nonvolatile memory IC die so that the pin-out of the memory device package may present a standard pinout. The power and signal requirements of the authentication IC die may be satisfied with some or all of the pins for the nonvolatile memory integrated circuit die, or with other unused pins of the device package. One or more additional external contacts may be added exclusively for the authentication integrated circuit die. One or more signals may be dedicated as between the standard nonvolatile memory IC die and the authentication IC die.

Abstract: The present invention discloses a reference cell circuit which is applied to a non-volatile memory. The reference cell circuit includes a reference cell array, a first current mirror circuit, and a second current mirror circuit. The reference cell array includes at least one row of floating gate transistors. The first current mirror circuit is arranged to generate a mirror current according to a reference current generated by the reference cell array. The second current mirror circuit is arranged to receive the mirror current and generate an adjusted reference current according to the mirror current and a selected one of a plurality of enable signals, wherein the plurality of enable signals correspond to a plurality operations of the non-volatile memory and the adjusted reference current is arranged to determine logical state of a plurality of memory cells of the non-volatile memory.

Abstract: The present invention discloses a reference cell circuit which is applied to a non-volatile memory. The reference cell circuit includes a reference cell array, a first current mirror circuit, and a second current mirror circuit. The reference cell array includes at least one row of floating gate transistors. The first current mirror circuit is arranged to generate a mirror current according to a reference current generated by the reference cell array. The second current mirror circuit is arranged to receive the mirror current and generate an adjusted reference current according to the mirror current and a selected one of a plurality of enable signals, wherein the plurality of enable signals correspond to a plurality operations of the non-volatile memory and the adjusted reference current is arranged to determine logical state of a plurality of memory cells of the non-volatile memory.

Abstract: A core-based multi-bit memory (400) having a dual-bit dynamic referencing architecture (408, 410) fabricated on the memory core (401). A first reference array (408) and a second reference array (410) are fabricated on the memory core (401) such that a reference cell pair (185) comprising one cell (182) of the first reference array (408) and a corresponding cell (184) of the second reference array (410) are read and averaged to provide a reference voltage for reading a data array(s).

Abstract: A core-based multi-bit memory (400) having a dual-bit dynamic referencing architecture (408, 410) fabricated on the memory core (401). A first reference array (408) and a second reference array (410) are fabricated on the memory core (401) such that a reference cell pair (185) comprising one cell (182) of the first reference array (408) and a corresponding cell (184) of the second reference array (410) are read and averaged to provide a reference voltage for reading a data array(s).

Abstract: A core-based multi-bit memory (400) having a dual-bit dynamic referencing architecture (408, 410) fabricated on the memory core (401). A first reference array (408) and a second reference array (410) are fabricated on the memory core (401) such that a reference cell pair (185) comprising one cell (182) of the first reference array (408) and a corresponding cell (184) of the second reference array (410) are read and averaged to provide a reference voltage for reading a data array(s).

Abstract: Disclosed are compounds Formula I and pharmaceutically acceptable salts thereof, wherein R1, R2, R3, R4, and R5 are defined herein. These compounds are useful for treating diseases and conditions caused or exacerbated by unregulated p38 MAP Kinase and/or TNF activity. Pharmaceutical compositions containing the compounds, methods of preparing the compounds and methods of treatment using the compounds are also disclosed.

Abstract: A system and method for column selection in a non-volatile memory cell array is disclosed. A group of memory cells is arranged in a rectangular array having rows (X-dimension) and columns (Y-dimension). Within a row, the sources and drains of the memory cells are connected to form a linear chain. A common word line is coupled to each gate in the row. A separate column line is coupled to each node between adjacent memory cells of the chain. A four column Y-decoder is used to select column lines for sense operations. A voltage source is applied to two of the four column lines during the sense operation. Current on one of the column lines may be sensed to provide a measurement for read or verification.

Abstract: Disclosed are compounds Formula I and pharmaceutically acceptable salts thereof, wherein R1, R2, R3, R4, and R5 are defined herein. These compounds are useful for treating diseases and conditions caused or exacerbated by unregulated p38 MAP Kinase and/or TNF activity. Pharmaceutical compositions containing the compounds, methods of preparing the compounds and methods of treatment using the compounds are also disclosed.

Abstract: A method for controlling gate voltage in a memory device is described. The method includes providing a circuit that is adapted to be coupled with the memory device. The circuit is for generating a reference voltage. The method further includes utilizing the reference voltage provided by the circuit to apply a voltage at a gate of the memory device. The voltage has a value corresponding to a temperature of the memory device. The method also includes retaining a proportional relationship between the reference voltage and the temperature of the memory device, regardless of the change in the temperature of the memory device. The reference voltage provides a substantially constant programming time for the memory device regardless of the temperature of the memory device.

Abstract: Disclosed are compounds of Formula I and pharmaceutically acceptable salts thereof, wherein R1, R2, R3, R4, and R5 are defined herein. These compounds are useful for treating diseases and conditions caused or exacerbated by unregulated p38 MAP Kinase and/or TNF activity. Pharmaceutical compositions containing the compounds, methods of preparing the compounds and methods of treatment using the compounds are also disclosed.

Abstract: A ground structure for page read and page write for flash memory. An array structure of flash memory cells comprises a plurality of sectors. Each sector comprises I/O blocks plus reference arrays and an array of redundant cells. Each I/O block comprises sub I/O blocks. Each sub I/O block within an I/O block, as well as other structures including reference cells, redundant cells and edge structures is coupled to a unique ground reference signal. These unique ground reference signals may be selectively coupled to a system ground or a biased ground reference. This novel ground arrangement enables a page read operation in which one bit from each sub I/O block can be read simultaneously. In addition, one bit from each I/O block may be programmed simultaneously. Further, the ground reference voltage for cells of the array may be selectively adjusted to optimize operation.

Abstract: A core-based multi-bit memory (400) having a dual-bit dynamic referencing architecture (408, 410) fabricated on the memory core (401). A first reference array (408) and a second reference array (410) are fabricated on the memory core (401) such that a reference cell pair (185) comprising one cell (182) of the first reference array (408) and a corresponding cell (184) of the second reference array (410) are read and averaged to provide a reference voltage for reading a data array(s).

Abstract: An exemplary memory sector erase method comprises the steps of pre-programming a first bit and a second bit of a plurality of core memory cells of a plurality of memory blocks of a target memory sector, pre-programming one of a third bit and a fourth bit of a first neighboring memory cell adjacent to the target memory sector, and erasing the first bit and the second bit of the plurality of core memory cells of the plurality of memory blocks. According to another embodiment, the method further comprises programming the one of the third bit and the fourth bit of the first neighboring memory cell after the erasing step.

Abstract: An array of non-volatile memory cells includes active columns of cells wherein a data pattern may be stored adjacent to damaged or inactive columns wherein data is not stored. A method of storing a data pattern and reproducing the data pattern within such an array comprises storing a charge within a selected plurality of the memory cells within the active column. The selected plurality of memory cells represents a portion of the data pattern. An inactive memory cell programming pattern is identified. The inactive memory cell programming pattern identifies all, or a selected plurality, of the memory cells in the inactive column in which a charge is to be stored for the purpose of periodically storing a charge in the memory cells first inactive column to prevent over erasure, during bulk erase, and leakage from the inactive cells to adjacent active cells. A charge is stored on the selected plurality of the memory cells in the first inactive column.

Abstract: Embodiments of the present invention are directed to a method and system to minimize page programming time for page programmable memory devices. In one embodiment, the present invention comprises program logic that programs a page programmable memory device with a plurality of words during a page programming cycle and a detector coupled to the program logic that identifies a particular word in that plurality of words which does not require programming. When the detector identifies a particular word which does not require programming, it sends an indication to the program logic component which, in response to the signal, reduces the length of the page programming cycle.

Abstract: A method of programming a memory unit having a plurality of dual cell core memory devices and at least one dual cell dynamic reference device. The memory unit is subjected to an erase configuration operation such that each cell of the core memory devices is in a blank state and such that a threshold voltage of the at least one dynamic reference device is less than a charged program level threshold voltage. Thereafter, the at least one dynamic reference and the core memory devices are programmed using a page programming routine.

Abstract: A system and method for column selection in a non-volatile memory cell array is disclosed. A group of memory cells is arranged in a rectangular array having rows (X-dimension) and columns (Y-dimension). Within a row, the sources and drains of the memory cells are connected to form a linear chain. A common word line is coupled to each gate in the row. A separate column line is coupled to each node between adjacent memory cells of the chain. A four column Y-decoder is used to select column lines for sense operations. A voltage source is applied to two of the four column lines during the sense operation. Current on one of the column lines may be sensed to provide a measurement for read or verification.

Abstract: The present invention discloses an over-current protection apparatus, which comprises a current-sensitive element and at least two electrodes. The current-sensitive element is composed of a positive temperature coefficient (PTC) conductive composition, which includes at least one polymer, a conductive filler and a non-conductive filler. The melting point of the polymer is greater then 110° C., and the vicat softening point of the polymer is smaller than 110° C. for improving the conductivity and thermal stabilization of the over-current protection apparatus.