Abstract: Provided are a class of compounds, a stereoisomer, an optical isomer, a pharmaceutically acceptable salt, a prodrug, a solvate (for example, a hydrate) or an isotope derivative thereof. The compounds have a tri-heterocyclic structure (for example, the structure represented by formula (A)), which is a novel structure, thereby providing a new direction for the development of SOS1 inhibitor drugs. In-vitro enzyme activity inhibition activity studies show that the compounds have a relatively strong inhibition effect on SOS1 and can be used as a prospective compound for preventing and/or treating SOS1-mediated diseases. Moreover, said compounds also exhibit significant inhibitory activity on NCI-H358 cell proliferation. Furthermore, a specific synthesis method is provided. The synthesis method is simple in process, convenient to operate and beneficial to large-scale industrial production and use.

Abstract: A method includes: receiving at least one semiconductor wafer to a wafer carrier, wherein the wafer carrier has an inspection window arranged on a side of the wafer carrier; transporting the wafer carrier between a plurality of semiconductor tools; and in response to an emergent event, switching the inspection window to a transparent mode for a predetermined period.

Abstract: A method of manufacturing a semiconductor device includes forming a gate dielectric layer over a channel region, and forming a first conductive layer over the gate dielectric layer. The method further includes forming a protective layer at a surface region of the first conductive layer by implanting a dopant into the surface region of the first conductive layer. The dopant is selected from a group consisting of boron, silicon, carbon, and nitrogen. The method also includes forming a metallic layer by applying a metal containing gas on the protective layer, and removing the metallic layer by a wet etching operation using a solution.

Abstract: The present disclosure relates to a manufacturing method for an array substrate, including: forming a first electrode material layer, a conductive enhancement material layer and a protective material layer in sequence, oxidation resistance of the protective material layer being stronger than that of the conductive enhancement material layer; forming a mask pattern on a side of the protective material layer away from the first electrode material layer, the mask pattern including a first portion and a second portion, and a thickness of the first portion being greater than that of the second portion; performing ashing on the mask pattern to remove the second portion to expose the protective material layer covered by the second portion; patterning the first electrode material layer to form a first electrode; and patterning the protective material layer and the conductive enhancement material layer to form a protective layer and a conductive enhancement layer.

Abstract: In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region, a first conductive layer is formed over the gate dielectric layer, a protective layer is formed at a surface region of the first conductive layer, a metallic layer is formed by applying a metal containing gas on the protective layer, and the metallic layer is removed by a wet etching operation using a solution. The protective layer is resistant to the solution of the wet etching operation.

Abstract: A compound represented by formula (I) or a tautomer, an optical isomer, a nitrogen oxide, a solvate, a pharmaceutically acceptable salt or prodrug thereof are useful for treating or relieving an HIF-related and/or EPO-related disease or condition in patient. The preparation method for the compound, and use of a drug composition containing the compound and the compound or the drug composition in preparation of a drug are also provided.

Abstract: Disclosed is a compound as shown in formula (I) or a pharmaceutically acceptable salt, a stereoisomer, an isotope derivative or a prodrug thereof. The compound has an excellent activity as a cyclin-dependent kinase 9 (CDK9) inhibitor for treating hyperproliferative diseases. The experimental research on in vitro inhibition of cell proliferation and in vivo suppression of tumors shows that such compounds have a relatively strong inhibitory effect on MV4;11 cells and in vivo tumor models, and have a good selectivity and a low toxicity and few side effects, thereby possessing a good clinical value as novel anti-tumor drugs.

Abstract: A refrigerator includes a housing, a plurality of openings and a drawer. The housing includes a plurality of side surfaces which define an accommodating cavity. The plurality of openings are respectively formed in different side surfaces. The drawer is arranged in the accommodating cavity and can be pulled out along any one of the plurality of openings. The drawer is arranged in the accommodating cavity so that a user can pull out the drawer to take and place food from the openings located in different side surfaces of the housing.

Abstract: The present disclosure relates to the technical field of household appliances, and discloses a refrigerator including: a housing, a plurality of openings and a drawer. The housing includes a plurality of side surfaces which define an accommodating cavity; the plurality of openings are respectively formed in different side surfaces; and the drawer is arranged in the accommodating cavity, and can be pulled out along any one of the plurality of openings. In the present disclosure, the drawer is arranged in the accommodating cavity, so that a user can pull out the drawer to take and place food from the openings located in different side surfaces of the housing. Therefore, the user can take and place the food on different sides of the refrigerator, which is convenient for taking and placing the food and enhances the experience of the user.

Abstract: A method for controlling a water heater is provided. The method includes: controlling operation of a blower when a first condition is satisfied; and controlling an air outlet to be partially or fully opened according to a first parameter or a first instruction. Furthermore, a device for controlling a water heater is provided, including a processor and a memory having program instructions stored thereon. When the program instructions are executed, the processor performs the method for controlling the water heater. Moreover, the water heater is provided, including a housing, a blower, an air-out channel, a heating part, and the device for controlling the water heater.

Abstract: An antenna structure includes a first antenna, a second antenna, a third antenna, and a first grounding portion. The first antenna and the second antenna operate at a first frequency. The first antenna is disposed side by side with the second antenna, and the first antenna and the second antenna are orthogonally polarized. The third antenna operates at a second frequency, and the second frequency is lower than the first frequency. The first grounding portion includes a first side edge and a second side edge opposite to each other. The first antenna and the second antenna are connected to the first side edge and the third antenna is connected to the second side edge. An electronic device includes the said antenna structure.

Abstract: In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region, a first conductive layer is formed over the gate dielectric layer, a protective layer is formed at a surface region of the first conductive layer, a metallic layer is formed by applying a metal containing gas on the protective layer, and the metallic layer is removed by a wet etching operation using a solution. The protective layer is resistant to the solution of the wet etching operation.

Abstract: A compound represented by formula (I) or a tautomer, an optical isomer, a nitrogen oxide, a solvate, a pharmaceutically acceptable salt or prodrug thereof are useful for treating or relieving an HIF-related and/or EPO-related disease or condition in patient. The preparation method for the compound, and use of a drug composition containing the compound and the compound or the drug composition in preparation of a drug are also provided.

Abstract: The present application discloses a display substrate having a base substrate and a pixel definition layer for defining a plurality of subpixel regions on the base substrate. The pixel definition layer has a first side and a second side opposite to each other, the second side being on a side of the first side distal to the base substrate. The pixel definition layer has a first cross-section along a plane substantially parallel to the base substrate, the first cross-section being between the first side and the second side. An orthographic projection of the first cross-section on the base substrate substantially covers orthographic projections of the first side and the second side on the base substrate.

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor includes a first electrode on a substrate, a first insulating layer on the first electrode with the first insulating layer having a sidewall, an active layer on the first insulating layer with the active layer connected to the first electrode and comprising a portion on the sidewall which is configured as a channel of the thin film transistor, and a second electrode on the active layer with the second electrode connected to the active layer.