Abstract: In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region, a first conductive layer is formed over the gate dielectric layer, a protective layer is formed at a surface region of the first conductive layer, a metallic layer is formed by applying a metal containing gas on the protective layer, and the metallic layer is removed by a wet etching operation using a solution. The protective layer is resistant to the solution of the wet etching operation.

Abstract: The present application discloses a display substrate having a base substrate and a pixel definition layer for defining a plurality of sub pixel regions on the base substrate. The pixel definition layer has a first side and a second side opposite to each other, the second side being on a side of the first side distal to the base substrate. The pixel definition layer has a first cross-section along a plane substantially parallel to the base substrate, the first cross-section being between the first side and the second side. An orthographic projection of the first cross-section on the base substrate substantially covers orthographic projections of the first side and the second side on the base substrate.

Abstract: A display substrate and a display apparatus are provided. The display substrate includes a film layer and a blocking structure. The film layer includes a via surrounded by the blocking structure. The blocking structure is at an edge of the via.

Abstract: A method for manufacturing a ceramic-coated antibacterial fabric includes adding and mixing a ceramic component, calcium carbonate, a binder, and a dispersant into water, thereby to prepare a ceramic solution; heating the ceramic solution to 110 to 130° C., then immersing a fabric in the heated ceramic solution for 100 to 200 minutes, and then drying the fabric for 100 to 150 minutes at a temperature of 50 to 70° C., thereby to form a first coated ceramic layer on the fabric; and subsequently, heating the ceramic solution to 70 to 90° C., then immersing the fabric having the first coated ceramic layer thereon in the heated ceramic solution for 100 to 200 minutes, and then drying the fabric for 100 to 150 minutes at a temperature of 50 to 70° C., thereby to form a second coated ceramic layer on the first coated ceramic layer on the fabric.

Abstract: A dual band antenna module including a first radiator, a second radiator, a first filter and a second filter is provided. The first radiator resonates to generate a first frequency band and includes a first feeding end and a first ground end. The second radiator resonates to generate a second frequency band and includes a second feeding end and a second ground end. The first filter is extended from the first feeding end in a direction away from the first radiator and used for filtering the second frequency band. The second filter is extended from the second feeding end in a direction away from the second radiator and used for filtering the first frequency band.

Abstract: An antenna structure includes a first antenna, a second antenna, a third antenna, and a first grounding portion. The first antenna and the second antenna operate at a first frequency. The first antenna is disposed side by side with the second antenna, and the first antenna and the second antenna are orthogonally polarized. The third antenna operates at a second frequency, and the second frequency is lower than the first frequency. The first grounding portion includes a first side edge and a second side edge opposite to each other. The first antenna and the second antenna are connected to the first side edge and the third antenna is connected to the second side edge. An electronic device includes the said antenna structure.

Abstract: In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region, a first conductive layer is formed over the gate dielectric layer, a protective layer is formed at a surface region of the first conductive layer, a metallic layer is formed by applying a metal containing gas on the protective layer, and the metallic layer is removed by a wet etching operation using a solution. The protective layer is resistant to the solution of the wet etching operation.

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor includes a first electrode on a substrate, a first insulating layer on the first electrode with the first insulating layer having a sidewall, an active layer on the first insulating layer with the active layer connected to the first electrode and comprising a portion on the sidewall which is configured as a channel of the thin film transistor, and a second electrode on the active layer with the second electrode connected to the active layer.

Abstract: A display substrate and a display apparatus are provided. The display substrate includes a film layer and a blocking structure. The film layer includes a via surrounded by the blocking structure. The blocking structure is at an edge of the via.

Abstract: A thin film transistor and a method for manufacturing the same, an array substrate, and a display device are provided in embodiments of the disclosure. The method for manufacturing a thin film transistor in embodiments of the disclosure forms a plurality of strip-shaped protrusions on a substrate by a patterning process before forming structures of various layers of the thin film transistor, and then forms sequentially a gate electrode, a gate insulating layer, an active layer, a source-drain electrode on the plurality of strip-shaped protrusions; in other words, the thin film transistor is prepared, whose channels are aligned with and shaped to be similar to the plurality of strip-shaped protrusions, in a widthwise direction thereof.

Abstract: A dual band antenna module including a first radiator, a second radiator, a first filter and a second filter is provided. The first radiator resonates to generate a first frequency band and includes a first feeding end and a first ground end. The second radiator resonates to generate a second frequency band and includes a second feeding end and a second ground end. The first filter is extended from the first feeding end in a direction away from the first radiator and used for filtering the second frequency band. The second filter is extended from the second feeding end in a direction away from the second radiator and used for filtering the first frequency band.

Abstract: A method of preparing a composite material includes the steps of: (a) dispersing graphene material and graphene oxide material in a solution, where the weight ratio of the graphene material to the graphene oxide material is between 0.2-1; and (b) after step (a), stirring the solution at a first temperature.

Abstract: A display substrate, a method for fabricating the same, and a display panel are disclosed. The method comprises forming a TFT on a substrate. The TFT comprises a gate, a gate insulating layer, an active layer, an ohmic contact layer, a source and a drain which are formed on the substrate in sequence. After forming the active layer, and prior to forming the ohmic contact layer, the method comprises forming a first pattern in a non-TFT region. The first pattern in the non-TFT region covers the gate insulating layer.

Abstract: A thin film transistor and a method for manufacturing the same, an array substrate, and a display device are provided in embodiments of the disclosure. The method for manufacturing a thin film transistor in embodiments of the disclosure forms a plurality of strip-shaped protrusions on a substrate by a patterning process before forming structures of various layers of the thin film transistor, and then forms sequentially a gate electrode, a gate insulating layer, an active layer, a source-drain electrode on the plurality of strip-shaped protrusions; in other words, the thin film transistor is prepared, whose channels are aligned with and shaped to be similar to the plurality of strip-shaped protrusions, in a widthwise direction thereof.

Abstract: A vacuum evaporation coating equipment, includes an evaporation source; a carrier for mounting a substrate to be coated; a plurality of masks connected to each other which are disposed between the evaporation source and the carrier; and a driving mechanism. The plurality of masks form at least two sets of correction masks; a driving mechanism is connected to each set of the correction masks and configured for driving one of the at least two sets of correction masks to be located within an evaporation stroke of material of the evaporation source.

Abstract: A method of forming a patterned metal film layer and preparation methods of a transistor and an array substrate are disclosed, in the technical field of displays. The method of forming a patterned metal film layer of the invention comprises: sequentially depositing a sacrificial layer and a photoresist layer on a substrate, and forming a patterned sacrificial layer and a patterned photoresist layer overlying on the patterned sacrificial layer by exposure, development, and etching, wherein a side wall of the patterned sacrificial layer adjacent to a patterned metal film layer to be formed forms a chamfer; depositing a metal film layer on the substrate after finishing the above step, and removing the patterned photoresist layer and the sacrificial layer to form a patterned metal film layer.