Abstract: A method for fabricating semiconductor devices includes forming channel regions over a substrate. The channel regions, in parallel with one another, extend along a first lateral direction. Each channel region includes at least a respective pair of epitaxial structures. The method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. The method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. The method includes removing, through a second etching process, a portion of the first channel region. The second etching process includes one silicon etching process and one silicon oxide deposition process. The method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.

Abstract: An integrated circuit includes an upper threshold circuit configured to set a logic level of a first enabling signal, a lower threshold circuit configured to set a logic level of a second enabling signal, and a control circuit configured to change an output voltage signal in response to a condition that the logic level of the first enabling signal and the logic level of the second enabling signal are changed consecutively. In the control circuit, a first switch is electrically connected to a second switch at a buffer output node. The control circuit includes a regenerative circuit configured to maintain the output voltage signal at the buffer output node while each of the first switch and the second switch is at a disconnected state.

Abstract: In one example in accordance with the present disclosure, an electronic device is described. The electronic device includes a wireless controller. The wireless controller is to establish a first wireless connection between the electronic device and a peripheral device to receive a unique identifier for a second electronic device. The wireless controller is also to establish, based on the unique identifier for the second electronic device, a second wireless connection between the electronic device and the second electronic device. The electronic device includes a wireless transceiver to wirelessly transfer data to the second electronic device through the second wireless connection.

Abstract: A level shifter can achieve a level shift by a wide margin. The level shifter includes a latch circuit, a clamping circuit, a protection circuit, and an input circuit. The latch circuit is coupled between a high-voltage terminal and a pair of output terminals for outputting a pair of output signals. The clamping circuit is coupled between a medium-voltage terminal and the pair of output terminals and limits the minimum voltage of the pair of output signals to the medium voltage. The protection circuit is set between the latch circuit and the input circuit, and prevents an excessive voltage drop between the input circuit and the pair of output terminals. The input circuit includes an input transistor pair coupled between the protection circuit and a low-voltage terminal having a low voltage. The input transistor pair receives a pair of input signals and operates accordingly.

Abstract: A method of manufacturing a positive electrode material has the steps of synthesizing an iron metal in a phosphoric acid solution to form an iron phosphate dispersion solution; adding a vanadium pentoxide (V2O5), a non-ionic surfactant and a carbon source to the iron phosphate dispersion solution; and adding a lithium salt to the iron phosphate dispersion solution and then grinding and dispersing it to produce a positive electrode material. By regulating the timing of the addition of vanadium pentoxide (V2O5), the present invention enables the battery made of the positive electrode material to have the advantage of higher battery performance.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.

Abstract: A package structure includes a package substrate, a first semiconductor package and a second semiconductor package, an underfill material, a gap filling structure and a heat dissipation structure. The first semiconductor package and the second semiconductor package are electrically bonded to the package substrate. The underfill material is disposed to fill a first space between the first semiconductor package and the package substrate and a second space between the second semiconductor package and the package substrate. The gap filling structure is disposed over the package substrate and in a first gap laterally between the first semiconductor package and the second semiconductor package. The heat dissipation structure is disposed on the package substrate and attached to the first semiconductor package and the second semiconductor package through a thermal conductive layer.

Abstract: A semiconductor structure includes a die and a first connector. The first connector is disposed on the die. The first connector includes a first connecting housing, a first connecting element and a first connecting portion. The first connecting element is electrically connected to the die and disposed at a first side of the first connecting housing. The first connecting portion is disposed at a second side different from the first side of the first connecting housing, wherein the first connecting portion is one of a hole and a protrusion with respect to a surface of the second side of the first connecting housing.

Abstract: A continuous manufacturing equipment of an elastic three-dimensional fabric and a continuous manufacturing method thereof are disclosed. The continuous manufacturing equipment includes: a film conveying device having a thermal melting film and a conveying mechanism; a cutting device used for cutting a plurality of cutting gaps on the thermal melting film; a first fabric laminating device adhering an outer fabric on one surface of the thermal melting film; and a second fabric laminating device adhering an elastic fabric on another surface of the thermal melting film in a manner of elastically stretching and then elastically recovering. As such, effects of automatic, continuous, and simple steps in manufacturing and having a high yield rate are provided.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A transmitter circuit is provided. The transmitter circuit has a first transmission node and a second transmission node and includes a first resistor, a second resistor, a third resistor, a fourth resistor, and a driving circuit. The driving circuit includes a first transistor group, a second transistor group, a third transistor group, and a fourth transistor group. The first resistor is coupled between a first output terminal and the first transmission node. The second resistor is coupled between a second output terminal and the second transmission node. The third resistor is coupled between a third output terminal and the first transmission node. The fourth resistor is coupled between a fourth output terminal and the second transmission node. The first, second, third, and fourth transistor groups are coupled to a first and a second reference voltages and electrically connected to the first, second, third, and fourth output terminals, respectively.

Abstract: A transmission-end impedance matching circuit operates according to a signal of an overvoltage signal source and includes a first level shifter, a voltage generating circuit, and an impedance matching circuit. The first level shifter generates a first conversion voltage according to a source signal and operates between a first high voltage and a ground voltage. The voltage generating circuit generates a second high voltage according to the first conversion voltage, the first high voltage, and a medium voltage. The impedance matching circuit includes a second level shifter, a transistor, and two resistors. The second level shifter generates a gate voltage according to the second high voltage, a low voltage, and an input signal. The transistor is turned on/off according to the gate voltage and has a withstand voltage lower than the first high voltage. Each of the two resistors is coupled between the transistor and a differential signal transmission end.

Abstract: A transmitter circuit is provided. The transmitter circuit has an input port, a first transmission node, a second transmission node, a third transmission node, and a fourth transmission node and includes a first operational amplifier, a first output stage, a first resistor-capacitor network, a first switch group coupled between the first resistor-capacitor network and the input port, a first impedance matching circuit coupled to the first output stage, the first transmission node, and the second transmission node, a second operational amplifier, a second output stage, a second resistor-capacitor network, a second switch group coupled between the second resistor-capacitor network and the input port, and a second impedance matching circuit coupled to the second output stage, the third transmission node, and the fourth transmission node.

Abstract: An output stage of an Ethernet transmitter is provided. The output stage is coupled to a resistor and includes a first output terminal, a second output terminal, a first transistor, and a first transistor group. The resistor is coupled between the first output terminal and the second output terminal. The first transistor has a first source, a first drain, and a first gate, the first source being coupled to a first reference voltage and the first drain being coupled to the second output terminal. The first transistor group is coupled to the first reference voltage and the first output terminal. The first transistor group includes multiple transistors which are connected in parallel, and the magnitude of the current flowing to the first output terminal is related to the number of transistors that are turned on.

Abstract: A hemming path planning method and a hemming system are provided. The hemming path planning method includes the following steps. An initial contour data of a target is scanned to obtain. A first segment of the hemming path is planned according to the initial contour data. The first segment corresponds to a first bending angle. A second segment of the hemming path is planned according to the initial contour data and an expected springback amount related to the first bending angle. The second segment corresponds to a second bending angle. The first segment and the second segment are combined to obtain a continuous hemming path.

Abstract: A transmission-end impedance matching circuit operates according to a signal of an overvoltage signal source and includes a first level shifter, a voltage generating circuit, and an impedance matching circuit. The first level shifter generates a first conversion voltage according to a source signal and operates between a first high voltage and a ground voltage. The voltage generating circuit generates a second high voltage according to the first conversion voltage, the first high voltage, and a medium voltage. The impedance matching circuit includes a second level shifter, a transistor, and two resistors. The second level shifter generates a gate voltage according to the second high voltage, a low voltage, and an input signal. The transistor is turned on/off according to the gate voltage and has a withstand voltage lower than the first high voltage. Each of the two resistors is coupled between the transistor and a differential signal transmission end.

Abstract: A level shifter can achieve a level shift by a wide margin. The level shifter includes a latch circuit, a clamping circuit, a protection circuit, and an input circuit. The latch circuit is coupled between a high-voltage terminal and a pair of output terminals for outputting a pair of output signals. The clamping circuit is coupled between a medium-voltage terminal and the pair of output terminals and limits the minimum voltage of the pair of output signals to the medium voltage. The protection circuit is set between the latch circuit and the input circuit, and prevents an excessive voltage drop between the input circuit and the pair of output terminals. The input circuit includes an input transistor pair coupled between the protection circuit and a low-voltage terminal having a low voltage. The input transistor pair receives a pair of input signals and operates accordingly.

Abstract: An industrial image inspection method includes: generating a test latent vector of a test image; measuring a distance between a training latent vector of a normal image and the test latent vector of the test image; and judging whether the test image is normal or defected according to the distance between the training latent vector of the normal image and the test latent vector of the test image.

Abstract: A method for cleaning a semiconductor substrate is provided. The method includes the steps of: applying a first agent onto a top surface of the semiconductor substrate while the semiconductor substrate is rotated at a first rotational frequency; immersing the semiconductor substrate in a second agent while rotating the semiconductor substrate at a second rotational frequency; and rotating the semiconductor substrate at a third rotational frequency while a third agent is introduced onto the top surface of the semiconductor substrate. The first rotational frequency may be greater than the third rotational frequency and the third rotational frequency is greater than the second rotational frequency. In some embodiments, the second rotational frequency is zero and the semiconductor substrate is held stationary during the immersing step.

Abstract: A keyboard key structure includes a plurality of keycaps. Each keycap has a keycap body and an outward layer. The keycap body has an appearance with a first color. The outward layer has an appearance with a second color different from the first color. The outward layer is formed above the keycap body. The outward layer is formed with an engraving portion. The first color is exposed in the engraving portion. The present invention also provides a method of manufacturing a keycap of a keyboard key.