Abstract: An array of nanoscale structures over photodiodes of a pixel array improves quantum efficiency (QE) for shorter wavelengths of light, such as green light and blue light. The nanoscale structures may be used without high absorption (HA) structures (e.g., when the pixel array is configured only for visible light) or may at least partially surround HA structures (e.g., when the pixel array is configured both for visible light and near infrared light). Additionally, the array of nanoscale structures may be formed using photolithography such that the nanoscale structures are approximately spaced at regular intervals. Therefore, QE for the pixel array is improved more than if the array of nanoscale structures were to be formed using a random (or quasi-random) process.

Abstract: In a pattern formation method, a photoresist layer is formed over a substrate by combining a first precursor and a second precursor in a vapor state to form a photoresist material. The first precursor is an organometallic having a formula MaRbXc, where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te, R is an alkyl group that is substituted by different EDG and/or EWG, X is a halide or sulfonate group, and 1?a?2, b?1, c?1, and b+c?4. The second precursor is water, an amine, a borane, and/or a phosphine. The photoresist material is deposited over the substrate, and selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method for generating a dense light detection and ranging (LiDAR) representation by a vision system includes receiving, at a sparse depth network, one or more sparse representations of an environment. The method also includes generating a depth estimate of the environment depicted in an image captured by an image capturing sensor. The method further includes generating, via the sparse depth network, one or more sparse depth estimates based on receiving the one or more sparse representations. The method also includes fusing the depth estimate and the one or more sparse depth estimates to generate a dense depth estimate. The method further includes generating the dense LiDAR representation based on the dense depth estimate and controlling an action of the vehicle based on identifying a three-dimensional object in the dense LiDAR representation.

Abstract: A touch sensor includes a base layer; a first electrode member that includes a plurality of first electrodes arranged on the base layer and electrically connected to each other along a first direction, each of the first electrodes including a first opening; a second electrode member that includes a plurality of second electrodes arranged on the base layer and electrically connected to each other along a second direction that intersects the first direction; a conductive member that includes a plurality of conductive patterns electrically connected to each other along the first direction; and a proximity detector that is electrically connected to the conductive member and configured to detect proximity of an object by receiving a proximity sensing signal from the conductive member. Each of the conductive patterns is located in the first opening of each of the first electrodes and spaced apart from each of the first electrodes, respectively.

Abstract: A display device includes a display panel including a plurality of pixels, a display driver configured to display an image on the display panel in a frame period unit, to display the image on the display panel in a display period of the frame period, and to not display the image in a blank period of the frame period, a touch panel including touch electrodes, and a touch driver configured to sense a touch adjacent to the touch panel via the touch electrodes, and to transmit an uplink signal to an external device through the touch electrodes in a first time period, the first time period being in the blank period.

Abstract: Interconnect structures exhibiting reduced accumulation of copper vacancies along interfaces between contact etch stop layers (CESLs) and interconnects, along with methods for fabrication, are disclosed herein. A method includes forming a copper interconnect in a dielectric layer and depositing a metal nitride CESL over the copper interconnect and the dielectric layer. An interface between the metal nitride CESL and the copper interconnect has a first surface nitrogen concentration, a first nitrogen concentration and/or a first number of nitrogen-nitrogen bonds. A nitrogen plasma treatment is performed to modify the interface between the metal nitride CESL and the copper interconnect.

Abstract: A water purifier includes: a water outlet unit; a water temperature sensor; a filter; a cold water module for cooling the purified water to provide cold water; a hot water module including a heater for heating water, and a hot water body providing a space which receives the hot water or through which the hot water flows; a flow channel connected to the water outlet unit, the filter, the cold water module, and the hot water module to provide a passage through which the purified water, the cold water, the hot water, and discharge water flow; a valve module that are selectively opened/closed to control the flow of water in the flow channel; and a controller for controlling the valve module such that a temperature of the water discharged from the water outlet unit measured by the water temperature sensor is a target temperature.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming an interconnect structure over a device wafer. The device wafer includes a first integrated circuit, a semiconductor substrate, and a redistribution structure. The method further includes forming a metallization layer and a group of dummy insertion structures having a stepped pattern density in a topmost dielectric layer of the interconnect structure. The group of dummy insertion structures and the metallization layer are planarized with the dielectric layer. The method further includes forming a first bonding layer over the group of dummy insertion structures, the metallization layer, and the dielectric layer. The method further includes bonding a carrier wafer to the first bonding layer, forming an opening through the semiconductor substrate, and forming a conductive via in the opening and electrically coupled to the redistribution structure.

Abstract: A polyolefin separator for an electrochemical device, the separator having a plurality of pores having an average pore size of 20 nm to 40 nm and a maximum pore size of 50 nm or less and including a polyolefin resin having a polydispersity index (PDI) of in a range of 2.5 to 4.2. The polyolefin separator may have a strain rate of 25% or less as measured when a tensile stress is applied at 60° C. at 15 MPa for 60 seconds, and the polyolefin separator may have a recovery time of 200 seconds or less to reach a recovery rate of 70% as measured after removing a tensile stress applied at 70° C. at 2 MPa for 180 seconds.

Abstract: A touch device includes a touch panel including touch electrodes, and a touch driver adjacent to the touch panel, configured to sense a touch of a user, configured to transmit uplink signals including position information of the touch electrodes to an active pen through at least some of the touch electrodes in a first touch period, and configured to receive a sensing signal including position information of the active pen, which is calculated using the uplink signals, from the active pen in a second touch period after the first touch period.

Abstract: Disclosed in the invention is a thin film deposition a device, comprising: a processing chamber; a gas supply assembly, which is arranged on the top wall of the processing chamber; a heating tray, which is arranged below the gas supply assembly for bearing and heating the substrate; a radio frequency source; and a rotating mechanism configured to control the rotation of the substrate, or the rotation of the heating tray, or control the synchronous rotation of the substrate and the heating tray, wherein the rotation shaft for rotation is perpendicular to and passing through the substrate. The radio frequency source is kept in an on state during rotation.

Abstract: Provided is an integrated fan-out (InFO) package structure including a first die, a second die, a third die, a protective layer, and an interconnect structure. The first die has a first surface and a second surface opposite to each other. The first die has a plurality of through substrate vias (TSVs) protruding from the second surface. The second die and the third die are bonded on the first surface of the first die. The protective layer laterally surrounds protrusions of the plurality of TSVs that protrude from the second surface. The interconnect structure are disposed on the protective layer and electrically connected to the plurality of TSVs. The interconnect structure includes a polymer layer covering the protective layer.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A substrate processing apparatus may be utilized, for example, for a horizontally fixed organic material deposition equipment for manufacturing large-area displays. A substrate processing apparatus may include a titanium cooling plate having an upper surface and a lower surface; an electrostatic chuck including a first dielectric layer provided on the lower surface, an electrode layer provided on the first dielectric layer, and a second dielectric layer provided on the first dielectric layer and the electrode layer, and chucking a glass substrate using an electrostatic force; and a yoke plate positioned on the upper surface and chucking a mask using a magnetic force. The titanium cooling plate may further includes a first channel provided from the upper surface, a second channel provided from the first channel, and a titanium cover plate coupled to the first channel. The titanium cooling plate may provide a cooling flow path using the second channel.

Abstract: A display device includes: a touch panel including a touch area including first touch electrodes and second touch electrodes; and a touch panel driver for providing touch driving signals to the first touch electrodes. The touch panel driver provides the touch driving signals to the first touch electrodes in a first touch sensing period of a first mode, operates in a second mode when the first touch is detected, and provides the touch driving signals to the first touch electrodes disposed in a first row area of the touch area in which the first touch is detected in a second touch sensing period of the second mode.

Abstract: A semiconductor memory device includes active regions including first impurity regions and second impurity regions, word lines on the active regions and extended in a first direction, bit lines on the word lines and extended in a second direction crossing the first direction, the bit lines being connected to the first impurity regions, first contact plugs between the bit lines, the first contact plugs being connected to the second impurity regions, landing pads on the first contact plugs, respectively, and gap-fill structures filling spaces between the landing pads, top surfaces of the gap-fill structures being higher than top surfaces of the landing pads.

Abstract: A method for vehicle prediction, planning, and control is described. The method includes separately encoding traffic state information at an intersection into corresponding traffic state latent spaces. The method also includes aggregating the corresponding traffic state latent spaces to form a generalized traffic geometry latent space. The method further includes interpreting the generalized traffic geometry latent space to form a traffic flow map including current and future vehicle trajectories. The method also includes decoding the generalized traffic geometry latent space to predict a vehicle behavior according to the traffic flow map based on the current and future vehicle trajectories.

Abstract: The present disclosure relates to a thick film electrode and a method for manufacturing the same. Since the thick film electrode uses a photocurable monomer as a processing solvent, it requires no separate drying step and may have a sufficiently large thickness without physical cracking. In addition, since the thick film electrode uses a nonwoven web-type substrate having a carbon body applied to the surface of a conductive polymer, it may have higher ion conductivity and areal capacity. Further, a semi solid-state battery including the thick film electrode may have excellent energy density.