Abstract: A furnace tube for thin film deposition, includes: a process tube; a wafer boat, arranged inside the process tube and provided with multi-layered supporting members along the length direction of the process tube; a gas supply tube, arranged inside the process tube and provided with multi-layered gas supply holes along the length direction of the process tube. Multi-layered exhaust holes are arranged on the sidewall of the process tube along the length direction, wherein the distribution area of the gas supply holes is gradually reduced from top to bottom along the length direction of the sidewall of the process tube, and the distribution area of the exhaust holes is gradually reduced from top to bottom along the length direction of the sidewall of the process tube.

Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.

Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Abstract: A high-temperature tube furnace comprises: a process tube (1) with a top cover (101) arranged on the top end thereof, the top cover (101) being provided with through holes (1011); a gas supply pipe (2) communicating with the through holes (1011) of the top cover (101) of the process tube (1), process gas being introduced into the process tube (1) through the gas supply pipe (2) and the through holes (1011) of the top cover (101) of the process tube (1); a wafer boat (3) arranged in the process tube (1), and comprising a supporting frame (301) and supporting plates (302), the supporting plates (302) being distributed in multiple layers along the length direction of the supporting frame (301) and used for supporting multiple substrates (w), each substrate (w) being placed on one supporting plate and each supporting plate supporting the entire bottom of the substrate (w).

Abstract: A substrate processing apparatus includes a clamp mechanism, a spray head mechanism, a rotary drive mechanism, a heating mechanism, and a control mechanism. The heating mechanism includes a heating plate arranged below a substrate, wherein the heating plate is provided with at least two cavities in a radial direction, and the cavities are distributed at different radii. During the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate along the radial direction of the substrate, when the liquid nozzle moves to a certain area above the substrate, the control mechanism controls the thermal energy of fluid in the cavity located at the corresponding radius of the area.

Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Abstract: The present application relates to a modified immune effector cell, wherein the functions of a T cell antigen receptor (TCR) and major histocompatibility complexes (MHCI, MHCII) in the modified immune effector cell are inhibited in a T cell, and the modified immune effector cell comprises a chimeric antigen receptor (CAR) targeting IL13R?2. The modified immune effector cell of the present application knocks out TCR and HLA-A genes expressed by the cell while recognizing surface antigens of tumor cells, so that multiple effects of improving the anti-tumor effect of CAR-T cells, prolonging the survival time of the cells, and reducing the immune rejection response caused by allogeneic cell therapy are achieved.

Abstract: Disclosed in the invention is a thin film deposition a device, comprising: a processing chamber; a gas supply assembly, which is arranged on the top wall of the processing chamber; a heating tray, which is arranged below the gas supply assembly for bearing and heating the substrate; a radio frequency source; and a rotating mechanism configured to control the rotation of the substrate, or the rotation of the heating tray, or control the synchronous rotation of the substrate and the heating tray, wherein the rotation shaft for rotation is perpendicular to and passing through the substrate. The radio frequency source is kept in an on state during rotation.

Abstract: The present application relates to an antigen-binding polypeptide that specifically binds to B7H3, comprising at least one complementarity-determining region (CDR) of an antibody heavy chain variable region (VH), wherein the VH comprises an amino acid sequence set forth in SEQ ID NO: 25. The present application further relates to a chimeric antigen receptor comprising the antigen-binding polypeptide and a universal CAR-T cell comprising the chimeric antigen receptor. The CAR-T cell recognizes a surface antigen of a tumor cell and knocks out TCR and HLA-A genes expressed by the cell at the same time, so that the immune rejection caused by an allogeneic CAR-T therapy is reduced, the survival time of the cell is prolonged, and the anti-tumor effect is improved.

Abstract: Embodiments of the present disclosure disclose obtaining to-be-encoded first information that includes first and second information bit sets. The bits included in the first information bit set are obtained through decoding by a plurality of terminal devices. The bits included in the second information bit set are able to be obtained through decoding by some of the plurality of terminal devices. Polar encoding is first performed on the first information bit set to obtain first encoded information. Polar encoding is then performed on the second information bit set based on the first encoded information to obtain second encoded information.

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

Abstract: A terahertz healthy rosary structure includes a plurality of serial-connected rosary bead that include a silicon material and emit a terahertz wave, a through hole, a rope-based fixing structure, and a first rosary bead that includes a silicon material and emits a terahertz wave. The through hole is formed in the serial-connected rosary beads. The first rosary bead is arranged on the rope-based fixing structure and two sides of the first rosary bead are each connected with a respective one of the serial-connected rosary beads, so that the rope-based fixing structure connects each of the serial-connected rosary beads and the first rosary bead in series to form a rosary bead structure having a predetermined shape. The serial-connected rosary beads and the first rosary bead emit a terahertz wave that has a frequency of 0.1-10 THz and a wavelength of 0.03-3 mm to be absorbed by the human body.

Abstract: The present application relates to an antigen-binding polypeptide that specifically binds to B7H3, comprising at least one complementarity-determining region (CDR) of an antibody heavy chain variable region (VH), wherein the VH comprises an amino acid sequence set forth in SEQ ID NO: 25. The present application further relates to a chimeric antigen receptor comprising the antigen-binding polypeptide and a universal CAR-T cell comprising the chimeric antigen receptor. The CAR-T cell recognizes a surface antigen of a tumor cell and knocks out TCR and HLA-A genes expressed by the cell at the same time, so that the immune rejection caused by an allogeneic CAR-T therapy is reduced, the survival time of the cell is prolonged, and the anti-tumor effect is improved.

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

Abstract: The present disclosure provides example coding method, apparatus, and computer-readable storage medium. One example method includes sorting a plurality of pieces of run-length encoding (RLE) data based on their distribution probabilities. The plurality of pieces of sorted RLE data are mapped onto a plurality of pieces of reassembled data. The plurality of pieces of reassembled data are expanded into a plurality of pieces of binary data. A first matrix is generated based on the plurality of pieces of binary data. A code sequence is determined by processing a source signal, where the code sequence comprises a first set and a second set. A first vector is decoded to output a third set, where the third set includes one or more bits reserved after processing the source signal and one or more locations at which a decoding error occurs in one or more bits discarded after processing the source signal.

Abstract: A semiconductor circuit device in which a plurality of target circuits are provided and a control signal for controlling enable and disable is input to each of the plurality of target circuits, the device includes: a gating control circuit provided for each of the plurality of target circuits, in which the control signal to the corresponding target circuit is input and an On signal is output in response to the control signal for enabling the target circuit; and a power gate switch for each of the plurality of target circuits, which is provided on each power line for each of the plurality of target circuits for supplying a driving voltage to the target circuit and turned on by the On signal.

Abstract: In an embodiment of the disclosure, disclosed is a circuit based on in-memory computing in a digital domain, including: an array of computational storage cells, the computational storage cells including a preset number of data storage cells and a preset number of single-bit multipliers in one-to-one correspondence; an adder tree configured to accumulate products output by respective computational storage cells to obtain an accumulated result; and a multi-bit input transfer logic configured to convert accumulated results output by the adder tree and corresponding to respective single bits included in the input feature data into a multiply-accumulate result of multi-bit input feature data and multi-bit weight data. An in-memory multiply-accumulation is implemented or multi-bit weight data and input feature data, so that efficiency and energy efficiency density of in-memory computing is improved, “read disturb write” issue caused by a voltage change on bit lines is avoided, and computing stability is improved.