Abstract: An integrated circuit includes a first and second active region, a first insulating region, and a first and second contact. The first and second active region extend in a first direction, and are on a first level. The first active region includes a first and second drain/source region. The second active region includes a third drain/source region. The first insulating region is over the first drain/source region. The first contact overlaps the third drain/source region, is electrically coupled to the third drain/source region and is located on a second level. The second contact includes a first and second portion. The first portion overlaps the first and second drain/source. The second portion overlaps the first contact, the first and third drain/source region, and the first insulating region, and is electrically coupled to the first portion, and electrically insulated from the first drain/source region.

Abstract: A landmark identification and marking system for a panoramic image is provided. The system includes a storage device and a back-end processor. The storage device stores an initial panoramic image, attitude information, motion tracking information, and a landmark list. The back-end processor performs steps of: adjusting a visual angle of the initial panoramic image to a designated angle according to a difference value between the visual angle and the designated angle; providing the adjusted initial panoramic image to a front-end processor for calculating and generating a panoramic image integrated with landmark objects in the virtual space.

Abstract: An optical processing apparatus includes: a light splitting assembly, disposed on an optical path of an incident light, and configured to receive the incident light and split the incident light into at least two waveband lights, a difference between optical path lengths of the at least two waveband lights being less than a set threshold; and a light sensing assembly, disposed on optical paths of the at least two waveband lights, and configured to receive the at least two waveband lights.

Abstract: A method includes bonding a first package and a second package over a package component, adhering a first Thermal Interface Material (TIM) and a second TIM over the first package and the second package, respectively, dispensing an adhesive feature on the package component, and placing a heat sink over and contacting the adhesive feature. The heat sink includes a portion over the first TIM and the second TIM. The adhesive feature is then cured.

Abstract: The present disclosure provides a self-learning collaborative control method for active steering and yaw moment for a motor vehicle, including a first step of constructing fundamental formulas which are stored in a vehicle ECU, and a second step of calculating an active steering angle ?C and a yaw moment Mc on line by the vehicle ECU according to following sub-steps during a driving process of the motor vehicle, and controlling a driving state of the motor vehicle according to ?C and Mc. The second step includes a first sub-step of collecting raw real-time parameter values, a second sub-step of performing calculation by the identifier and the control target reference model, a third sub-step of calculating ?C and Mc. The present disclosure can realize the self-learning collaborative control of active steering and yaw moment without requiring a system control model and correct a driver's steering operation.

Abstract: Provided is an electrical signal sampling device. The electrical signal sampling device includes a pulse signal source, a first sampling module, and a signal delay module. The pulse signal source is configured to generate a pulse signal. The first sampling module is connected to the pulse signal source through a coupler. The coupler is configured to fan-out the pulse signal to generate a test input signal and a sampling incidence signal. The test input signal is input into a tested device from the coupler and then is coupled to form a test output signal. The first sampling module is configured to collect the sampling incidence signal and the test output signal through the coupler. The signal delay module generates N excitation signals through a preset delay.

Abstract: The present disclosure provides use of sweetpotato IbSAP15 gene in regulating leaf shape and flower shape of sweetpotato. Compared with the control, Ipomoea batatas cv. Xuzishu 8, IbSAP15-overexpressing lines have more deeply incised blades, dehiscent corollas, and higher ornamental value. In the present disclosure, overexpression of the sweetpotato IbSAP15 gene in sweetpotato can deepen leaf incisions, make trumpet-shaped corollas dehiscent, and change leaf shape and flower shape of sweetpotato. The present disclosure is suitable for developing sweetpotato germplasms with different leaf shape and flower shape and promotes ornamental flowering/foliage sweetpotato breeding.

Abstract: This application provides a charging plug and socket-outlet, charging and to-be-charged apparatuses, a charging system, and a control method. The charging system includes: a charging apparatus and a to-be-charged apparatus. The charging apparatus includes a charging plug and a first cooling system. The charging plug includes a first electrical transmission interface, a first heat conduction output interface, and a first heat conduction input interface. The to-be-charged apparatus includes a battery, a charging socket-outlet, and a second cooling system. The charging socket-outlet includes a second electrical transmission interface, a second heat conduction output interface, and a second heat conduction input interface. The solutions of this application can be used to meet a heat dissipation requirement of the battery in the to-be-charged apparatus during super charging.

Abstract: Provided in the embodiments of the present disclosure are a display panel, a display apparatus and a driving method therefor, and an image rendering method.

Abstract: Disclosed a silicon carbide MOSFET device and manufacturing method thereof. The method includes: forming a patterned first barrier layer on an upper surface of the substrate; forming a base region of a second doping type extending from the upper surface to an inside of the substrate through oblique implantation in a first ion implantation process by using a first barrier layer as a mask; forming a source region of the first doping type in the substrate; forming a contact region of the second doping type in the substrate; and forming a gate structure, an implantation angle of the first ion implantation process is adjusted so that the base region extends below a part of the first barrier layer. The method of the present disclosure not only reduces one photoetching process and saves cost, but also realizes a short channel and reduces an on-resistance of the device.

Abstract: A semiconductor device can include: a substrate having a first doping type; a first well region located in the substrate and having a second doping type, where the first well region is located at opposite sides of a first region of the substrate; a source region and a drain region located in the first region, where the source region has the second doping type, and the drain region has the second doping type; and a buried layer having the second doping type located in the substrate and below the first region, where the buried layer is in contact with the first well region, where the first region is surrounded by the buried layer and the first well region, and the first doping type is opposite to the second doping type.

Abstract: Provided are a facial recognition method, an electronic device, a computer-readable storage medium, and a facial recognition system. The facial recognition method includes: obtaining a first required comparison value and a second required comparison value based on a facial feature; if the first required comparison value is less than a preset comparison threshold and the second required comparison value is also less than the preset comparison threshold, re-extracting a facial feature, and matching the re-extracted facial feature against a plurality of original images separately to obtain a third required comparison value; and if the third required comparison value is greater than or equal to the preset comparison threshold, determining that the recognition is successful.

Abstract: Provided are a protocol data unit (PDU) session management method and apparatus. The method includes: receiving an SM policy modification request for a PDU session, and the request triggering establishment of a first QoS flow in the PDU session, in which the PDU session is established by a first terminal; in response to no data transmission tunnel having a same identifier as a flow identifier of the first QoS flow existing between a first UPF of a first satellite and a second UPF of a second satellite, establishing a first data transmission tunnel between the first UPF and the second UPF; and instructing the first UPF to transmit data of the first QoS flow through the first data transmission tunnel.

Abstract: A method and a system for comprehensively evaluating reliability of a multi-chip parallel IGBT module are provided. The method includes: establishing a gate-emitter voltage reliability model of the multi-chip parallel IGBT module, performing a chip fatigue failure test, and selecting a gate-emitter voltage as a failure characteristic quantity; establishing a transconductance reliability model of the multi-chip parallel IGBT module, performing a bonding wire shedding failure test, and selecting a transmission characteristic curve of the module as a failure characteristic quantity; using a Pearson correlation coefficient to characterize a degree of health of the IGBT module, and respectively calculating degrees of health PPMCCC and PPMCCB in different degrees of chip fatigue and bonding wire shedding failure states; and comprehensively evaluating the reliability of the multi-chip parallel IGBT module according to PPMCCC and PPMCCB.

Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time ?1, or comparing the detected power off time with a preset time ?2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time

Abstract: A multi-function handheld electric tool includes a motor housing receiving a motor, a settable clutch coupled with a speed reduction transmission, transmission housing coupled to the motor housing and having a first housing portion coupled to the motor housing, and a second housing portion extending from the first portion towards a chuck, and a setting collar which is rotatably fit over the second housing portion of the transmission housing and rotatable between a plurality of predetermined angular positions of which at least one corresponds to a non-torque limited first operation mode of the tool and the remaining positions correspond to different torque output levels of a torque limited second operation mode of the tool.

Abstract: Engineered bispecific antibodies with charge pairs introduced at the interface of CHI and CL alone or in combination with other charge pairs at the interface of VH and VL are described. Also described are anti-CD47/anti-CLDN18.2 and anti-CD3/anti-DLL3 bispecific antibodies and antigen-binding fragments thereof. Also described are nucleic acids encoding the bispecific antibodies, compositions comprising the bispecific antibodies, and methods of producing the bispecific antibodies and using the bispecific antibodies for treating or preventing diseases, such as cancer and/or associated complications.

Abstract: A first communication device generates a first physical layer (PHY) data unit that includes information indicating a capability to use a channel bandwidth greater than a maximum channel bandwidth of the first communication device, and transmits the first PHY data unit to a second communication device during an association process with the second communication device. The first communication device generates a second PHY data unit that includes information indicating a capability to use at most the maximum channel bandwidth of the first communication device, and transmits the second PHY data unit to the second communication device when the first communication device is associated with the second communication device.

Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.

Abstract: A solid-state battery cell, a solid-state battery, and methods of making the same are disclosed. The solid-state battery cell includes a cathode current collector, a cathode on the cathode current collector, a low-impedance interface film on the cathode, a solid-state electrolyte on or over the low-impedance interface film, a lithiophilic layer on or over the solid-state electrolyte, and an anode current collector on or over the lithiophilic layer. The low-impedance interface film may include an oxide, a nitride or an oxynitride of lithium and a metal selected from aluminum, silicon and titanium, carbon, a metal oxide, fluoride, oxyfluoride or phosphate, or an alkali metal borate, and may have a thickness of 5-100 ?, for example. The lithiophilic layer may be or include a metal oxide, silicate, aluminate or fluoride, or an elemental metal or metalloid, and may have a thickness of 5 ? to 1 ?m, for example.