Abstract: The present invention provides a method for synthesizing etelcalcetide or salts thereof, comprising the steps of: (a) synthesizing the D-amino acids in the formula (I) sequentially by Fmoc solid-phase synthesis, using a solid support as a starting material in solid phase peptide synthesis and sequentially synthesizing a D-form amino acid of formula (I) by Fmoc chemistry; deprotecting Fmoc group and acetylating the amino group to obtain a sequence A comprising protecting groups (PG) in the side chain of D-Cys and D-Arg; (b) removing the protecting group in the side-chain of D-Cys of the sequence A to form a sequence B; (c) disulfide formation at D-Cys of the sequence B by (PG)-L-Cys-OH to obtain a sequence C; (d) using a cleavage solution to remove the protecting groups of the sequence C to give etelcalcetide as formula (I). The present invention can shorten the steps and time for preparing Etelcalcetide.

Abstract: An electronic device is provided. The electronic device includes a backlight module. The backlight module includes a light-guiding plate and a light-guiding element, and the light-guiding element is disposed under the light-guiding plate. In addition, the light-guiding element has a protruding structure, and the protruding structure faces the light-guiding plate.

Abstract: An electronic device includes a circuit board and a metal reflective structure. The metal reflective structure is disposed on the circuit board. The metal reflective structure includes a protective layer and a metal layer. The metal layer is located between the protective layer and the circuit board. The protective layer includes transparent materials.

Abstract: An optical apparatus that includes: a semiconductor substrate formed from a first material, the semiconductor substrate including a first n-doped region; and a photodiode supported by the semiconductor substrate, the photodiode including an absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons, the absorption region being formed from a second material different than the first material and including: a first p-doped region; and a second n-doped region coupled to the first n-doped region, wherein a second doping concentration of the second n-doped region is less than or substantially equal to a first doping concentration of the first n-doped region.

Abstract: Embodiments of this application disclose a measurement method and a measurement apparatus, to perform RMTC measurement and DMTC measurement on an inter-frequency frequency. The method in the embodiments of this application includes: determining an idle component carrier; determining a RMTC measurement periodicity and a DMTC measurement periodicity of a first inter-frequency frequency for LAA; when the RMTC measurement periodicity and the DMTC measurement periodicity of the first inter-frequency frequency have a same time point, separately performing RMTC measurement on the first inter-frequency frequency by using the idle component carrier to obtain a first measurement result, and performing DMTC measurement on the first inter-frequency frequency to obtain a second measurement result; and sending the first measurement result and the second measurement result to a network device, where the first measurement result and the second measurement result are used to indicate the network device to schedule a resource.

Abstract: A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect layer on the germanium-silicon layer, wherein the interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes; defining integrated circuitry for controlling the pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and bonding the first interconnect layer with the second interconnect layer.

Abstract: The present disclosure relates to formulations, such as tablets, of FXR agonists and therapeutic uses thereof. The disclosure also relates to methods for obtaining such formulations.

Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

Abstract: In an embodiment, a method includes: stacking a plurality of first dies to form a device stack; revealing testing pads of a topmost die of the device stack; testing the device stack using the testing pads of the topmost die; and after testing the device stack, forming bonding pads in the topmost die, the bonding pads being different from the testing pads.

Abstract: Disclosed herein are novel solid forms of FXR agonists. The disclosure also relates to pharmaceutical compositions containing one or more of the solid forms disclosed herein, as well as methods of using the solid forms in the treatment of conditions mediated by FXR. The disclosure also relates to methods for obtaining such solid forms.

Abstract: An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region configured to absorb photons at a first wavelength range and to generate photo-carriers from the absorbed photons; a second light absorption region formed on the first light absorption region, the second light absorption region configured to absorb photons at a second wavelength range and to generate photo-carriers from the absorbed photons; and a sensor control signal coupled to the second light absorption region, the sensor control signal configured to provide at least a first control level and a second control level.

Abstract: A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect layer on the germanium-silicon layer, wherein the interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes; defining integrated circuitry for controlling the pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and bonding the first interconnect layer with the second interconnect layer.

Abstract: The present disclosure relates to a data storage device, system, and a data writing method. The device comprises a controller and a plurality of storage blocks, each storage block consisting of an idle storage block and a non-idle storage block, the controller connecting to each storage block respectively, wherein the controller is configured to generate, when receiving a data writing command, a self-adapting adjustment instruction according to a comparison between a storage distribution state of the storage block and a first threshold value to configure the idle-storage block as an SLC block or an XLC block; the storage block is configured to correspondingly adjust the storage distribution state according to the self-adapting adjustment instruction to store written data in the SLC block or the XLC block of the idle storage block.

Abstract: Examples described herein provide for an electronic device apparatus with multiple thermally conductive paths for heat dissipation. In an example, an electronic device apparatus includes a package comprising a die attached to a package substrate. The electronic device apparatus further includes a ring stiffener disposed around the die and on the package substrate, a heat sink disposed on the package, and a wedge disposed between the heat sink and the ring stiffener.

Abstract: The present disclosure provides a driver circuit and its working method and a display device. The driver circuit includes: a driver chip coupled with a plurality of signal lines; a plurality of signal line leads that are corresponding to the plurality of signal lines in a one-to-one manner; and a plurality of short-circuit shielding circuits that are corresponding to the plurality of signal line leads in a one-to-one manner. Each of the plurality of short-circuit shielding circuits is coupled between corresponding one of the plurality of signal line leads and corresponding one of the plurality of signal lines, and is configured to turn on or off a connection between the corresponding one of the plurality of signal line leads and the corresponding one of the plurality of signal lines.

Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.

Abstract: The disclosure provides a sealing plug assembly including a plug body, a guide ring, a first sealing ring and an elastic component. The plug body has an annular outer surface having a plug side and an exposed side opposite each other and a first annular recess located at the annular outer surface and located between the plug side and the exposed side. The guide ring is sleeved on the plug body and located in the first annular recess. The guide ring has a first inclined surface. The first sealing ring is sleeved on the plug body and located in the first annular recess. The first sealing ring is located farther away from the exposed side of the annular outer surface than the guide ring. The first sealing ring has a second inclined surface matching the first inclined surface. The elastic component is sleeved on the first sealing ring.

Abstract: A method for fabricating an optical sensor includes: forming, over a substrate, a first material layer comprising a first alloy of germanium and silicon having a first germanium composition; forming, over the first material layer, a graded material layer comprising germanium and silicon; and forming, over the graded material layer, a second material layer comprising a second alloy of germanium and silicon having a second germanium composition. The first germanium composition is lower than the second germanium composition and a germanium composition of the graded material layer is between the first germanium composition and the second germanium composition and varies along a direction perpendicular to the substrate.

Abstract: A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

Abstract: A high hydrostatic pressure processing method, applied for food processing, comprises capturing the first image of a food material, obtaining the first color parameter according to the first image and storing the first color parameter into the first food quality parameter group, performing the first high-pressure-process on the food material according to the first food quality parameter group so as to obtain an intermediate product, capturing the second image of the intermediate product, obtaining the second color parameter according to the second image and storing the second color parameter into the second food quality parameter group, and performing the second high-pressure-process on the intermediate product according to the second food quality parameter group and a sterilization standard.