Patents by Inventor Hui Yan

Hui Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240147781
    Abstract: An embodiment of the present application provides a display device including a substrate, a driving circuit layer, a light emitting device layer, and a color filter unit that are disposed in a stacked manner; at least one of the light emitting device layer or the color filter unit is provided with a buffer groove in which a plurality of elastic particles are provided. When the display device is subject to an impact, a plurality of elastic particles in the buffer groove are compressed and deformed after being pressed, so as to play a role of buffering and effectively improve the impact resistance of the display device.
    Type: Application
    Filed: March 11, 2022
    Publication date: May 2, 2024
    Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Yuanchun Wu, Ying Yan, Weiran Cao, Shijian Qin, Hui Huang
  • Publication number: 20240145559
    Abstract: A transistor structure includes a substrate, a source electrode, a drain electrode, a protective layer and a gate electrode. The source electrode and the drain electrode are provided on the substrate. The protective layer is provided on the substrate. The protective layer is provided between the source electrode and the drain electrode. The protective layer includes a SiNx layer and a SiOx layer. The SiOx layer is provided on the substrate, the SiNx layer is provided on the SiOx layer, and a through hole of the protective layer is formed to extend through the SiNx layer and the SiOx layer. The gate electrode is provided in the through hole, and the gate electrode is separated from at least part of the SiOx layer so as to form an air gap therebetween.
    Type: Application
    Filed: December 21, 2022
    Publication date: May 2, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chang-Yan HSIEH, Po-Tsung TU, Jui-Chin CHEN, Hui-Yu CHEN, Po-Chun YEH
  • Publication number: 20240132905
    Abstract: The present disclosure provides use of sweetpotato IbSAP15 gene in regulating leaf shape and flower shape of sweetpotato. Compared with the control, Ipomoea batatas cv. Xuzishu 8, IbSAP15-overexpressing lines have more deeply incised blades, dehiscent corollas, and higher ornamental value. In the present disclosure, overexpression of the sweetpotato IbSAP15 gene in sweetpotato can deepen leaf incisions, make trumpet-shaped corollas dehiscent, and change leaf shape and flower shape of sweetpotato. The present disclosure is suitable for developing sweetpotato germplasms with different leaf shape and flower shape and promotes ornamental flowering/foliage sweetpotato breeding.
    Type: Application
    Filed: November 17, 2022
    Publication date: April 25, 2024
    Applicant: XUZHOU INSTITUTE OF AGRICULTURAL SCIENCES
    Inventors: Yaju LIU, Hao XIE, Qiang LI, Yungang ZHANG, Hui YAN, Meng KOU, Wei TANG, Xin WANG, Qiangqiang YANG, Xiaoxiao WANG, Ranqiu LI
  • Publication number: 20240128148
    Abstract: A method includes attaching a package component to a package substrate, the package component includes: an interposer disposed over the package substrate; a first die disposed along the interposer; and a second die disposed along the interposer, the second die being laterally adjacent the first die; attaching a first thermal interface material to the first die, the first thermal interface material being composed of a first material; attaching a second thermal interface material to the second die, the second thermal interface material being composed of a second material different from the first material; and attaching a lid assembly to the package substrate, the lid assembly being further attached to the first thermal interface material and the second thermal interface material.
    Type: Application
    Filed: January 6, 2023
    Publication date: April 18, 2024
    Inventors: Chang-Jung Hsueh, Po-Yao Lin, Hui-Min Huang, Ming-Da Cheng, Kathy Yan
  • Publication number: 20240121460
    Abstract: Embodiments of the present disclosure provide an adaptive playback method and device for video, the method includes: receiving a playback instruction for a target video; and playing the target video according to a first code rate in response to the playback instruction; where the first code rate is determined by the following steps: predicting by using a network speed prediction algorithm to obtain a first network speed; acquiring a code rate prediction model corresponding to the network speed prediction algorithm, where the code rate prediction model is used for representing, under a historical performance parameter before switching to the network speed prediction algorithm, a mapping relationship between a network speed predicted by the network speed prediction algorithm and a code rate; and determining the first code rate corresponding to the first network speed through the code rate prediction model.
    Type: Application
    Filed: February 21, 2022
    Publication date: April 11, 2024
    Inventors: Bing YAN, Xigui WANG, Hui WANG
  • Publication number: 20240114724
    Abstract: A display panel is provided. The display panel includes a substrate, and a plurality of anodes, a pixel definition layer, a light-emitting layer, and a cathode layer that are laminated on the substrate. By collecting the anodes spaced apart from each other in a first direction in a same first pixel opening, number of the first pixel openings in the display area can be reduced, and number of ink droplets that can be sprayed within a single first pixel opening can be increased, so that a risk of bridging between adjacent ones of pixel openings can be lowered.
    Type: Application
    Filed: October 28, 2022
    Publication date: April 4, 2024
    Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Ying Yan, Shijian Qin, Hui Huang
  • Publication number: 20240110255
    Abstract: The present invention discloses a extra thick hot rolled H section steel and a production method therefor. The extra thick hot rolled H section steel contains, by mass, the following chemical components: 0.04-0.11% of C, 0.10-0.40% of Si, 0.40-1.00% of Mn, 0.40-1.00% of Cr, 0.10-0.40% of Cu, 0.020-0.060% of Nb, 0.040-0.100% of V, 0.010-0.025% of Ti, 0.010-0.030% of Al, 0.0060-0.0120% of N, not more than 0.015% of P, not more than 0.005% of S, not more than 0.0060% of O, and the balance Fe and trace residual elements, wherein 0.090%?Nb+V+Ti?0.170%, 6.5?(V+Ti)/N?10.5, and 0.30%?CEV?0.48%. The extra thick hot rolled H section steel has a flange thickness of 90 mm-150 mm, has excellent comprehensive mechanical properties, and can well meet the needs for heavy supporting structural parts of high-rise buildings, large squares, bridge structures, etc.
    Type: Application
    Filed: October 27, 2021
    Publication date: April 4, 2024
    Inventors: Meng XIA, Baoqiao WU, Meizhuang WU, Jun XING, Jie WANG, Hui CHEN, Jingcheng YAN, Qi HUANG, Lin PENG, Junwei HE, Zhaohui DING, Qiancheng SHEN
  • Publication number: 20240114201
    Abstract: Provided are a video preloading method and apparatus, a device, and a medium. The method includes: in response to determining that a length of a buffered video reaches a first numerical value, creating and executing a preloading task, where the buffered video is a current video that is buffered and is to be played, and the preloading task is used for preloading a subsequent video; and in an execution process of the preloading task, in response to determining that the length of the buffered video is less than or equal to a second numerical value, cancelling the preloading task, where the second numerical value is less than the first numerical value.
    Type: Application
    Filed: January 30, 2022
    Publication date: April 4, 2024
    Inventors: Shenglan HUANG, Haiqing TAO, Hui WANG, Chao MA, Bing YAN, Xiaocheng LI
  • Publication number: 20240105587
    Abstract: The semiconductor device includes a substrate, a first and a second nitride-based semiconductor multiple layered structures, a first and a second conductive layers. The substrate has a device region and a peripheral region that encloses the device region. The first nitride-based semiconductor multiple layered structure covers the device region and has an edge in the peripheral region. The second nitride-based semiconductor multiple layered structure is within the peripheral region. The first nitride-based semiconductor multiple layered structure is separated from the second nitride-based semiconductor multiple layered structure. The first conductive layer extends from the device region to the peripheral region. The first conductive layer includes a first portion filling into a region between the first and second nitride-based semiconductor multiple layered structures.
    Type: Application
    Filed: March 2, 2022
    Publication date: March 28, 2024
    Inventors: Hui YAN, Sichao LI
  • Publication number: 20240096726
    Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first nitride-based transistor, a second nitride-based transistor, and a thermal resistor. The first nitride-based transistor is disposed over the second nitride-based semiconductor layer and applies the 2DEG region as an own channel. The second nitride-based transistor is disposed over the second nitride-based semiconductor layer and applying the 2DEG region as an own channel. The temperature sensor is disposed over the second nitride-based semiconductor layer and between first and second nitride-based transistors. The temperature sensor is in a strip shape and at least turns twice in a region between first and second nitride-based transistors.
    Type: Application
    Filed: December 31, 2021
    Publication date: March 21, 2024
    Inventors: Haohua MA, Hehong WU, Sichao LI, Hui YAN
  • Patent number: 11934459
    Abstract: A ripple push method for a graph cut includes: obtaining an excess flow ef(v) of a current node v; traversing four edges connecting the current node v in top, bottom, left and right directions, and determining whether each of the four edges is a pushable edge; calculating, according to different weight functions, a maximum push value of each of the four edges by efw=ef(v)*W, where W denotes a weight function; and traversing the four edges, recording a pushable flow of each of the four edges, and pushing out a calculated flow. The ripple push method explores different push weight functions, and significantly improves the actual parallelism of the push-relabel algorithm.
    Type: Grant
    Filed: September 22, 2021
    Date of Patent: March 19, 2024
    Assignee: SHANGHAITECH UNIVERSITY
    Inventors: Guangyao Yan, Xinzhe Liu, Yajun Ha, Hui Wang
  • Patent number: 11932209
    Abstract: The present invention discloses a method and system for protecting the operation of a train under an air pollution environment.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: March 19, 2024
    Assignee: Central South University
    Inventors: Hui Liu, Chao Chen, Guangxi Yan, Zhihao Long
  • Publication number: 20240085866
    Abstract: The present disclosure provides a method and device for intelligent control of heating furnace combustion based on a big data cloud platform, which relates to the technical field of artificial intelligence control. The method includes: construction of big data cloud platform based on production and operation parameters of the heating furnace; identification of key factors in the production process of the heating furnace by using big data mining technology; independent deployment of traditional heating furnace combustion control systems based on the mechanism model; and integration of cloud platform big data expert knowledge base and the heating furnace combustion intelligent control system.
    Type: Application
    Filed: September 7, 2023
    Publication date: March 14, 2024
    Applicant: University of Science and Technology Beijing
    Inventors: Qing LI, Fengqin LIN, Hui LI, Li WANG, Chengyong XIAO, Xu YANG, Jiarui CUI, Chunqiu WAN, Qun YAN, Yan LIU, Lei MIAO, Jin GUO, Boyu ZHANG, Chen HUANG, Yaming XI, Yuxuan LIN
  • Publication number: 20240047451
    Abstract: A nitride-based semiconductor integrated circuit (IC) chip is provided. The IC chip comprises: a substrate; intra-transistor isolation regions formed in a surface of the substrate for defining power domains respectively for transistors integrated in the IC chip; an epitaxial body layer disposed over the substrate and the intra-transistor isolation regions; a first and a second nitride-based layers disposed above the epitaxial body layer. The epitaxial body layer and the substrate are formed of a same material and each of the one or more intra-transistor isolation regions is implanted to have a doping polarity opposite to a doping polarity of the substrate. By the implementation of the epitaxial body layer over the isolation regions, the quality of the heterojunction formed between the nitride-based semiconductor layers can be guaranteed as the impact of implantation of the isolation regions to the formation of heterojunction interface can be eliminated.
    Type: Application
    Filed: August 6, 2021
    Publication date: February 8, 2024
    Inventors: Hui YAN, Sichao LI
  • Publication number: 20230411953
    Abstract: A circuit for reverse battery protection includes an isolation circuit and a control circuit. The isolation is circuit coupled between a gate output of an electronic fuse (E-fuse) and at least one external metal-oxide-semiconductor field-effect transistor (MOSFET). The E-fuse is coupled between a battery voltage pin and an external ground pin and further coupled to a microcontroller. The isolation circuit is configured to disconnect the gate output from the at least one external MOSFET when the battery is installed with reverse polarity. The control circuit is coupled between the external ground pin and the at least one external MOSFET. The control circuit is configured to turn on the at least one external MOSFET when the battery is installed with the reverse polarity.
    Type: Application
    Filed: June 20, 2022
    Publication date: December 21, 2023
    Inventors: Ping Chen, Hui Yan, Vincenzo Randazzo, Alberto Marzo, Andrea Camillo Re
  • Publication number: 20230352487
    Abstract: The present invention provides a nitride-based multi-channel switching device having a plurality of transistors. The multi-channel switching device comprises a substrate, a plurality gate structures, a plurality of source electrodes and a plurality of drain electrodes. The gate structures, source electrodes and drain electrodes are grouped to form the plurality of transistors and arranged such that each gate structure disposed between a source electrode and drain electrode. Each group of the gate structures are electrically interconnected and connected to at least one gate pad corresponding to each of the transistor. Each group of the drain electrode are electrically interconnected and connected to at least one drain pad corresponding to each of the transistor. All groups of the source electrodes are electrically interconnected and connected to at least one common source pad.
    Type: Application
    Filed: July 1, 2021
    Publication date: November 2, 2023
    Inventors: Hui YAN, Sichao LI, Dinghui CAI, Jihua LI, Yulin CHEN, Tao ZHANG
  • Publication number: 20230265396
    Abstract: Provided are an isolated recombinant oncolytic poxvirus capable of being regulated and controlled by microRNA and a use thereof. The isolated recombinant oncolytic poxvirus can be regulated and controlled by microRNA, and the expression level of the microRNA in tumor cells of a mammal is lower than that in normal cells of the same mammal. A target sequence of the microRNA is integrated in a 3?UTR region of an E10R gene in a recombinant oncolytic poxvirus genome.
    Type: Application
    Filed: April 23, 2021
    Publication date: August 24, 2023
    Inventors: Jin FU, Rong ZHANG, Tingting WANG, Fang HU, Hui YAN
  • Patent number: 11560879
    Abstract: A solar-aided coal-fired flexible power generation system and an operating method thereof are provided. The system includes a coal-fired thermal power generation system and a high-temperature heat storage system coupled with solar thermal power generation; wherein a heat storage medium heater is arranged in the boiler flue; the flow rates of heat storage medium entering the solar heat collection device and the heat storage medium heater are adjusted by the regulating valve and the pump, eliminating irradiation fluctuation influences and maintaining stable power; a heat storage medium tank is used for peak shaving to reduce steam turbine output under stable boiler combustion; the flow and temperature of the feedwater entering the heat storage medium and feedwater heat exchanger are adjusted to realize rapid load cycling. The present invention can realize solar and coal-fired generation coupling, reduce coal consumption, and greatly improve the flexibility and economy.
    Type: Grant
    Filed: June 22, 2019
    Date of Patent: January 24, 2023
    Assignee: XI'AN JIAOTONG UNIVERSITY
    Inventors: Hui Yan, Ming Liu, Daotong Chong, Jinshi Wang, Weixiong Chen, Junjie Yan
  • Patent number: 11529546
    Abstract: The present invention relates to a novel treadmill with elastic band aided system to drive the tread belt. The elastic band aided system includes at least one of the foot attachment, hand attachment, and waist attachment. This elastic band aided system can be used in manual treadmills and motorized treadmills.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: December 20, 2022
    Inventor: Hui Yan
  • Patent number: D983900
    Type: Grant
    Filed: November 19, 2021
    Date of Patent: April 18, 2023
    Inventor: Hui Yan