Abstract: An electronic vehicle includes A DC link capacitor and a traction inverter coupled to the DC link capacitor. The traction inverter includes a first half bridge circuit, a second half bridge circuit, and a third half bridge circuit each coupled between terminals of the DC link capacitor. The traction inverter includes a driver circuit coupled to the traction inverter configured to drive the first, second, and third half bridge circuits to generate an AC voltage in a standard operating mode. The driver circuit is configured to discharge the DC link capacitor responsive to a discharge command by toggling the first half bridge between an open condition and a closed condition while holding the second half bridge circuit and the third half bridge circuit in the open condition.

Abstract: A circuit for reverse battery protection includes an isolation circuit and a control circuit. The isolation is circuit coupled between a gate output of an electronic fuse (E-fuse) and at least one external metal-oxide-semiconductor field-effect transistor (MOSFET). The E-fuse is coupled between a battery voltage pin and an external ground pin and further coupled to a microcontroller. The isolation circuit is configured to disconnect the gate output from the at least one external MOSFET when the battery is installed with reverse polarity. The control circuit is coupled between the external ground pin and the at least one external MOSFET. The control circuit is configured to turn on the at least one external MOSFET when the battery is installed with the reverse polarity.

Abstract: A semiconductor device includes: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer; a drain contact and a source contact on the second nitride semiconductor layer; a common contact on the second nitride semiconductor layer and between the drain contact and source contact; a first gate structure on the second nitride semiconductor layer and between the drain contact and common contact; a second gate structure on the second nitride semiconductor layer and between the common contact and source contact; a conductive wire on the source contact; a dielectric layer on the second nitride semiconductor layer and covering a portion of a lateral surface of the conductive wire; and a conductive via connected to the conductive wire, extending through a portion of the dielectric layer, the second nitride semiconductor layer, and the first nitride semiconductor layer to the substrate.

Abstract: Disclosed is an antibody that specifically recognizes and binds to folate receptor ?, also referred to as anti-folate receptor a antibody or anti-FR? antibody. Also disclosed is an antibody-drug conjugate of the anti-FR? antibody. Disclosed are uses of the anti-FR? antibody and the antibody-drug conjugate in the treatment of diseases related to FR? expression.

Abstract: The present disclosure provides use of lysophosphatidic acid (LPA) as a feed additive in controlling porcine infectious diarrhea, and belongs to the technical field of feed nutrition. The LPA is a type of lipid substance that is produced endogenously in vivo and can reduce a large secretion level of intestinal fluid in piglets caused by Escherichia coli infection via inhibiting cystic fibrosis transmembrane-conductance regulator (CFTR)-dependent iodine efflux. In this way, a susceptibility of weaned piglets to the Escherichia coli is prevented to effectively maintain the intestinal health of piglets. LPA is an endogenous substance in vivo, and it is first discovered that adding the LPA into a feed can control Escherichia coli-caused infectious diarrhea in the piglets.

Abstract: An example apparatus, an automotive lighting system, and an automotive lighting apparatus for driving a lighting element in an automotive lighting system are provided. The example apparatus includes a lighting element and a lighting element driver electrically connected to the lighting element and a serial communication bus. The lighting element driver includes a flexible circuit board, a serial communication interface configured to receive a serial communication message related to the lighting element, a power supply interface electrically connected to a power source, and a lighting element driver processor mounted on and electrically connected to the flexible circuit board. The lighting element driver transmits power from the power supply interface to the lighting element based at least in part on the serial communication message.

Abstract: The present invention provides a nitride-based multi-channel switching device having a plurality of transistors. The multi-channel switching device comprises a substrate, a plurality gate structures, a plurality of source electrodes and a plurality of drain electrodes. The gate structures, source electrodes and drain electrodes are grouped to form the plurality of transistors and arranged such that each gate structure disposed between a source electrode and drain electrode. Each group of the gate structures are electrically interconnected and connected to at least one gate pad corresponding to each of the transistor. Each group of the drain electrode are electrically interconnected and connected to at least one drain pad corresponding to each of the transistor. All groups of the source electrodes are electrically interconnected and connected to at least one common source pad.

Abstract: The invention belongs to the field of medicine, and particularly discloses an anti-Helicobacter pylori derivative containing a dihydrostilbene parent nucleus and a preparation method thereof; according to the invention, glycyrrhiza stems and leaves are used as raw materials, subjected to alcohol extraction, and then extracted, separated and identified through a macroporous resin, silica gel column chromatography and a preparative liquid phase to obtain a new natural isopentenyl dihydrostilbene compound, and the new compound has good activity to two kinds of drug-resistant and sensitive Helicobacter pylori, and can be used for preparing an anti-Helicobacter pylori drug.

Abstract: A strain separation method for preventing and controlling early bolting of Angelica sinensis, and preparation of a microbial agent and use thereof, the strain is obtained by separation, purification and cultivation from rhizosphere soil of Angelica sinensis, and is identified as Bacillus spp. by Microbial 16S rDNA sequencing; the strain was deposited at China Center for Type Culture Collection on Jun. 24, 2021 under CCTCC NO: M 2021767; The Bacillus velezensis XG3 strain provided by the present invention can promote the seed germination of Angelica sinensis and delay the flowering of Arabidopsis thaliana for about 2 days; according to field test verification, the microbial agent can increase the root weight, root diameter and rootlet number of Angelica sinensis, can effectively prevent and control early bolting of Angelica sinensis.

Abstract: A drug conjugate, such as an antibody drug conjugate, and the use thereof, belonging to the field of biomedicine. In some embodiments, the drug conjugate is a compound of Formula I or a pharmaceutically acceptable salt or a solvate thereof, and can be used for treating cancers, autoimmune diseases, inflammatory diseases or infectious diseases.

Abstract: The present disclosure provides use of sweetpotato IbSAP15 gene in regulating leaf shape and flower shape of sweetpotato. Compared with the control, Ipomoea batatas cv. Xuzishu 8, IbSAP15-overexpressing lines have more deeply incised blades, dehiscent corollas, and higher ornamental value. In the present disclosure, overexpression of the sweetpotato IbSAP15 gene in sweetpotato can deepen leaf incisions, make trumpet-shaped corollas dehiscent, and change leaf shape and flower shape of sweetpotato. The present disclosure is suitable for developing sweetpotato germplasms with different leaf shape and flower shape and promotes ornamental flowering/foliage sweetpotato breeding.

Abstract: Disclosed are an entangled state preparation method and device based on a superconducting quantum bit and a Rydberg atom. With the help of two strong microwave driving fields, an unconventional geometric quantum gate is achieved, as to complete the preparation of a maximum entangled state. The influence of a laser field and a magnetic field required by the Rydberg atom and a radiation-cooled superconducting coaxial cable on the coherence of the superconducting quantum bit may be reduced.

Abstract: The present disclosure provides use of sweetpotato IbSAP15 gene in regulating leaf shape and flower shape of sweetpotato. Compared with the control, Ipomoea batatas cv. Xuzishu 8, IbSAP15-overexpressing lines have more deeply incised blades, dehiscent corollas, and higher ornamental value. In the present disclosure, overexpression of the sweetpotato IbSAP15 gene in sweetpotato can deepen leaf incisions, make trumpet-shaped corollas dehiscent, and change leaf shape and flower shape of sweetpotato. The present disclosure is suitable for developing sweetpotato germplasms with different leaf shape and flower shape and promotes ornamental flowering/foliage sweetpotato breeding.

Abstract: The semiconductor device includes a substrate, a first and a second nitride-based semiconductor multiple layered structures, a first and a second conductive layers. The substrate has a device region and a peripheral region that encloses the device region. The first nitride-based semiconductor multiple layered structure covers the device region and has an edge in the peripheral region. The second nitride-based semiconductor multiple layered structure is within the peripheral region. The first nitride-based semiconductor multiple layered structure is separated from the second nitride-based semiconductor multiple layered structure. The first conductive layer extends from the device region to the peripheral region. The first conductive layer includes a first portion filling into a region between the first and second nitride-based semiconductor multiple layered structures.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first nitride-based transistor, a second nitride-based transistor, and a thermal resistor. The first nitride-based transistor is disposed over the second nitride-based semiconductor layer and applies the 2DEG region as an own channel. The second nitride-based transistor is disposed over the second nitride-based semiconductor layer and applying the 2DEG region as an own channel. The temperature sensor is disposed over the second nitride-based semiconductor layer and between first and second nitride-based transistors. The temperature sensor is in a strip shape and at least turns twice in a region between first and second nitride-based transistors.

Abstract: A nitride-based semiconductor integrated circuit (IC) chip is provided. The IC chip comprises: a substrate; intra-transistor isolation regions formed in a surface of the substrate for defining power domains respectively for transistors integrated in the IC chip; an epitaxial body layer disposed over the substrate and the intra-transistor isolation regions; a first and a second nitride-based layers disposed above the epitaxial body layer. The epitaxial body layer and the substrate are formed of a same material and each of the one or more intra-transistor isolation regions is implanted to have a doping polarity opposite to a doping polarity of the substrate. By the implementation of the epitaxial body layer over the isolation regions, the quality of the heterojunction formed between the nitride-based semiconductor layers can be guaranteed as the impact of implantation of the isolation regions to the formation of heterojunction interface can be eliminated.

Abstract: A circuit for reverse battery protection includes an isolation circuit and a control circuit. The isolation is circuit coupled between a gate output of an electronic fuse (E-fuse) and at least one external metal-oxide-semiconductor field-effect transistor (MOSFET). The E-fuse is coupled between a battery voltage pin and an external ground pin and further coupled to a microcontroller. The isolation circuit is configured to disconnect the gate output from the at least one external MOSFET when the battery is installed with reverse polarity. The control circuit is coupled between the external ground pin and the at least one external MOSFET. The control circuit is configured to turn on the at least one external MOSFET when the battery is installed with the reverse polarity.

Abstract: The present invention provides a nitride-based multi-channel switching device having a plurality of transistors. The multi-channel switching device comprises a substrate, a plurality gate structures, a plurality of source electrodes and a plurality of drain electrodes. The gate structures, source electrodes and drain electrodes are grouped to form the plurality of transistors and arranged such that each gate structure disposed between a source electrode and drain electrode. Each group of the gate structures are electrically interconnected and connected to at least one gate pad corresponding to each of the transistor. Each group of the drain electrode are electrically interconnected and connected to at least one drain pad corresponding to each of the transistor. All groups of the source electrodes are electrically interconnected and connected to at least one common source pad.

Abstract: Provided are an isolated recombinant oncolytic poxvirus capable of being regulated and controlled by microRNA and a use thereof. The isolated recombinant oncolytic poxvirus can be regulated and controlled by microRNA, and the expression level of the microRNA in tumor cells of a mammal is lower than that in normal cells of the same mammal. A target sequence of the microRNA is integrated in a 3?UTR region of an E10R gene in a recombinant oncolytic poxvirus genome.