Abstract: An open-ear earphone includes a housing, a chamber is provided inside the housing, a speaker is provided inside the chamber and divides the chamber into a front chamber and a rear chamber. The housing is provided with a first sound hole and a second sound hole. The front chamber is communicated to the outside through the first sound hole, and the rear chamber is communicated to the outside through the second sound hole. The rear chamber includes a first volume down chamber and a second volume down chamber communicated to the first volume down chamber, and the first volume down chamber is located between the speaker and the second volume down chamber. The sound wave in backward motion generated by the speaker is transmitted to the outside from the second sound hole after being reduced by the first volume down chamber and the second volume down chamber.

Abstract: The present disclosure discloses an infrared thermal imaging defect detection method and apparatus for a substation insulator. An infrared module is bidirectionally connected to a core computing module, and an infrared module is unidirectionally connected to a high-rate battery. The core computing module is unidirectionally connected to a touch screen. The infrared module is configured to obtain infrared radiation information through a lens, and calculate and generate a temperature distribution video. The method includes infrared video acquisition, thermal region segmentation, device type determination, key temperature information extraction, defect diagnoses, result display and result saving.

Abstract: Disclosed is a pixel sensor circuit including a photodiode element and a transistor element. The photodiode element is configured to sense an X-ray to generate a photocurrent signal. The photodiode element has a first end and a second end. A bias voltage is applied to the first end of the photodiode element. The transistor element is coupled to the second end of the photodiode element. The transistor element is configured to control the photocurrent signal to be read out. The voltage value of the bias voltage is adjusted according to the intensity of the X-ray.

Abstract: Provided are methods and compositions for obtaining functionally enhanced derivative effector cells obtained from directed differentiation of genomically engineered iPSCs. In various embodiments, the derivative cells provided herein have stable and functional genome editing that delivers improved or enhanced therapeutic effects. Also provided are therapeutic compositions and the use thereof comprising the functionally enhanced derivative effector cells alone, or with antibodies or checkpoint inhibitors in combination therapies.

Abstract: A semiconductor device includes a substrate comprising a MTJ region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a metal interconnection on the logic region. Preferably, the MTJ includes a bottom electrode layer having a gradient concentration, a free layer on the bottom electrode layer, and a top electrode layer on the free layer.

Abstract: The high-density MRAM device of the present invention has a second interlayer dielectric (ILD) layer covering the capping layer in the MRAM cell array area and the logic area. The thickness of the second ILD layer in the MRAM cell array area is greater than that in the logic area. The composition of the second ILD layer in the logic area is different from the composition of the second ILD layer in the MRAM cell array area.

Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.

Abstract: This application provides an image defect detection method. The method includes obtaining a first image and a second image of a flawless image. A third image is obtained from the second image and the first image, and a fourth image is obtained according to the second image and an image to be detected. A fifth image is obtained based on the third image and the second image. A sixth image is obtained based on the third image and the fourth image. A seventh image is obtained from the fifth image and the sixth image. A defect value of the fourth image is obtained according to the third image and the seventh image. A detection result of the fourth image is determined based on the defect value.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, a top electrode is formed on the MTJ stack, the top electrode, the free layer, and the barrier layer are removed, a first cap layer is formed on the top electrode, the free layer, and the barrier layer, and the first cap layer and the pinned layer are removed to form a MTJ and a spacer adjacent to the MTJ.

Abstract: The present invention provides a self-healing ceramic material with reduced porosity and a method for preparing the same. The self-healing ceramic material comprises the following components by volume: 60-85 parts by volume of Al2O3, 10-20 parts by volume of TiN, 10-20 parts by volume of TiSi2, 0.1-1 parts by volume of MgO, and 0.1-1 parts by volume of Y2O3. Wherein, Al2O3 serves as a matrix, TiN and TiSi2 act as repair agents, and MgO and Y2O3 function as sintering aids. The repair function is realized by adding TiN and TiSi2, which have repair capabilities, to the ceramic matrix, enabling the ceramic material to heal cracks. TiN plays the main role of repair function, and TiSi2 assists in the repair and helps reduce the formation of surface pores.

Abstract: An automatic loading system for vehicles includes an overhead platform, a transporting machine, and a cargo carrying mechanism. The overhead platform includes two rails. The transporting machine is disposed on the rails and configured to move on the rails along a first direction. The transporting machine includes a hoist mechanism and a fork assembly disposed on the hoist mechanism. The hoist mechanism is configured to drive the fork assembly to move along a second direction which is perpendicular to the first direction. The fork assembly includes forks disposed side by side and separately. Each fork includes at least a conveyer belt. The cargo carrying mechanism is configured to carry cargos and includes a conveyer belt platform. When the fork assembly is close to the cargo carrying mechanism, the conveyer belt and the conveyer belt platform are configured to transport the cargos to the forks from the conveyer belt platform.

Abstract: A magnetic random access memory (MRAM) device includes a first magnetic tunneling junction (MTJ) on a substrate, a first top electrode on the first MTJ, and a passivation layer around the first MTJ. Preferably, the passivation layer includes a V-shape and a valley point of the V-shape is higher than a top surface of the first top electrode.

Abstract: A touch device includes a touch panel including touch electrodes, and a touch driver adjacent to the touch panel, configured to sense a touch of a user, configured to transmit uplink signals including position information of the touch electrodes to an active pen through at least some of the touch electrodes in a first touch period, and configured to receive a sensing signal including position information of the active pen, which is calculated using the uplink signals, from the active pen in a second touch period after the first touch period.

Abstract: A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.

Abstract: A method for preparing hydrogen sulfide from sulfur dioxide by electrochemical reduction includes electrochemically reducing sulfur dioxide absorbed in an aqueous solution into gaseous hydrogen sulfide with a membrane electrode, resulting in efficient and selective conversion of the sulfur dioxide absorbed in the aqueous solution into the hydrogen sulfide to avoid a deactivation of a cathode due to colloidal sulfur produced on the cathode and adhesion onto a surface of the cathode, wherein the method is carried out at ambient temperature and normal pressure without addition of a reducing agent, having no waste salts produced, and is simple in operation, and is convenient for large-scale application.

Abstract: Disclosed is an oil pump including: a pump module provided with a rotary shaft, an inner rotor coupling with the rotary shaft, an outer rotor rotated engaging with the inner rotor, an inlet for sucking fluid, and an outlet for pressing and discharging the sucked fluid; housings supporting the pump module; and a direction switching unit coupled between the housings and the outer rotor to keep an eccentric distance between the rotary shaft or a central axis line of the inner rotor and a central axis line of the outer rotor. According to the disclosure, there is provided an oil pump used for both forward rotation and reverse rotation, which does not require changing a suction area and a discharge area and direction switching is stably performed even when a power source rotates forwardly and reversely.

Abstract: A method for manufacturing a core-shell material comprises: atomizing a feedstock comprising a mixture of an active material and a solid-state ionic conductive material, or precursors thereof; and drying the atomized feedstock to form a core-shell material, the core-shell material comprising a core comprising the active material; and a coating of the solid-state ionic conductive material on the core to form a shell in intimate contact with the core.