Abstract: Provided is a manufacturing method of an array substrate with an etching stop layer. The method includes: forming a pattern including a gate, a gate line and a common electrode line on a substrate through a first patterning process; forming a gate insulation layer, an active layer film and an etching stop layer through a second patterning process; wherein, the etching stop layer corresponds to a gap between a source and a drain which are to be formed, and a via hole exposing the common electrode line is formed above the common electrode line; forming at least an active layer, a pattern including source, drain and data line and a protection layer through a third patterning process; wherein, the protection layer exposes a part of the drain; and forming at least a pixel electrode through a fourth patterning process; wherein, the pixel electrode is electrically connected with the drain.

Abstract: The present invention provides a film edge detecting method and a film edge detecting device. The film edge detecting method is used for detecting a film edge of a film layer formed on a substrate, the film layer comprises a patterned film layer, the method includes: forming at least one scale pattern in the patterned film layer, a film edge of the patterned film layer corresponding to an edge of the scale pattern; obtaining a patterned film edge indication value of the edge of the scale pattern; and obtaining a second distance, which is a distance between the film edge of the non-patterned film layer and a corresponding edge of the substrate, based on the non-patterned film edge indication value and a preset reference value of the corresponding edge of the substrate.

Abstract: The embodiment of the present invention discloses a display panel, a driving method thereof and a display device, a plurality of shift register units connected in one-to-one correspondence are arranged at one terminal of a plurality of gate lines, a plurality of charging modules connected in one-to-one correspondence are arranged at the other terminal of the plurality of gate lines; each charging module charges a corresponding gate line when the corresponding gate line is applied with a scanning signal by the shift register unit, i.e., when the shift register unit applies a scanning signal to the gate line, the charging module to which the gate line corresponds charges the gate line at the same time, which realizes bidirectional application of the scanning signal to the gate line, and increases the charging rate of the gate line.

Abstract: Disclosed is a method for preparing a polycrystalline metal oxide pattern, characterized by comprising: annealing a predetermined region of an amorphous metal oxide film by laser, so as to convert the amorphous metal oxide in the predetermined region into a polycrystalline metal oxide; and etching the amorphous metal oxide outside of the predetermined region so as to remove it. By the method according to the present invention, firstly, the predetermined region of an amorphous metal oxide film is annealed by laser so as to convert the amorphous metal oxide into a polycrystalline metal oxide, and then, the amorphous metal oxide outside of the predetermined region is etched away, thereby a polycrystalline metal oxide pattern is formed. The method for preparing a polycrystalline metal oxide pattern according to the present invention is simple, and can effectively shorten the production period and save production costs.

Abstract: The embodiments of the present invention disclose a parallax bather and a fabricating method thereof. The parallax barrier comprises a first transparent conducting layer (35), a second transparent conducting layer (36), and an insulating layer (37) between the first transparent conducting layer (35) and the second transparent conducting layer (36). The first transparent conductive layer (35) is formed into a plurality of signal electrode lines (350), and the second transparent conductive layer (36) is formed into a plurality of common electrode lines (360). The signal electrode lines (350) and the common electrode lines (360) are arranged alternately, and the common electrode lines (360) are located in a gap between adjacent signal electrode lines (350) with the insulating layer (37) in between.

Abstract: The present invention provides a film edge detecting method and a film edge detecting device. The film edge detecting method is used for detecting a film edge of a film layer formed on a substrate, the film layer comprises a patterned film layer, the method includes: forming at least one scale pattern in the patterned film layer, a film edge of the patterned film layer corresponding to an edge of the scale pattern; obtaining a patterned film edge indication value of the edge of the scale pattern; and obtaining a second distance, which is a distance between the film edge of the non-patterned film layer and a corresponding edge of the substrate, based on the non-patterned film edge indication value and a preset reference value of the corresponding edge of the substrate.

Abstract: Provided is a manufacturing method of an array substrate with an etching stop layer. The method includes: forming a pattern including a gate, a gate line and a common electrode line on a substrate through a first patterning process; forming a gate insulation layer, an active layer film and an etching stop layer through a second patterning process; wherein, the etching stop layer corresponds to a gap between a source and a drain which are to be formed, and a via hole exposing the common electrode line is formed above the common electrode line; forming at least an active layer, a pattern including source, drain and data line and a protection layer through a third patterning process; wherein, the protection layer exposes a part of the drain; and forming at least a pixel electrode through a fourth patterning process; wherein, the pixel electrode is electrically connected with the drain.

Abstract: The invention discloses an array substrate, and a method for repairing a broken data line on an array substrate. The method for repairing a broken data line on an array substrate includes steps: performing a treatment on a part of a semiconductor layer corresponding to an opening in a data line so that the part of the semiconductor layer becomes a conductive region, and the ends of the opening in the data line are electrically connected to each other by the conductive semiconductor layer. The above method for repairing a broken data line provided by the invention is not affected by the linewidth of the data line so that the broken data line can be repaired in the case that the linewidth of the data line is relatively small.

Abstract: Disclosed is a method for preparing a polycrystalline metal oxide pattern, characterized by comprising: annealing a predetermined region of an amorphous metal oxide film by laser, so as to convert the amorphous metal oxide in the predetermined region into a polycrystalline metal oxide; and etching the amorphous metal oxide outside of the predetermined region so as to remove it. By the method according to the present invention, firstly, the predetermined region of an amorphous metal oxide film is annealed by laser so as to convert the amorphous metal oxide into a polycrystalline metal oxide, and then, the amorphous metal oxide outside of the predetermined region is etched away, thereby a polycrystalline metal oxide pattern is formed. The method for preparing a polycrystalline metal oxide pattern according to the present invention is simple, and can effectively shorten the production period and save production costs.

Abstract: A thin film transistor and manufacturing method thereof, an array substrate (1) comprising the thin film transistor and manufacturing method thereof. The method of manufacturing the thin film transistor comprises forming an active layer (4) and a source-drain electrode layer (5), forming a photoresist layer (6) on the source-drain electrode layer (5) and forming a pattern of the photoresist layer by a pattern process; etching the source-drain electrode layer (5) by using the pattern of the photoresist layer as a mask to form a pattern of the source-drain electrode layer including a source electrode and a drain electrode; and removing the photoresist, then etching the active layer (4) by using the pattern of the source-drain electrode layer as a mask to form a pattern of the active layer.

Abstract: A manufacturing method of a light barrier glass sheet, comprising: farming a metal layer (2) on a glass substrate (1); coating a first photoresist layer (3) on the metal layer (2), performing first exposure on the first photoresist layer (3) through a half tone mask, then performing first development on the first photoresist layer (3); removing partial region of the metal layer (2) through a first etching process; removing a partial thickness and a partial region of the first photoresist layer (3) through an ashing process; forming an insulating layer (4) on the exposed glass substrate (1), the exposed metal layer (2), the first photoresist layer (3) after the ashing process, and sidewalls of the photoresist layer (3) after the ashing process; removing the first photoresist layer (3), the insulating layer (4) on the first photoresist layer (3), and the insulating layer (4) on the sidewalls of the first photoresist layer (3) by a photoresist lifting-off process so as to form a via hole (7); forming a transpare

Abstract: The present invention discloses a method for manufacturing a thin-film transistor, comprising the steps of: forming a semiconductor active layer, and a doped semiconductor active layer; forming a source-drain metal layer; forming a channel region; and implanting ions for lowering the TFT leakage current into the surface of the semiconductor active layer in the channel region via ion implantation after forming the channel region. The invention further relates to a thin-film transistor, a TFT array substrate and a display device. The invention has the following beneficial effects: by implanting ions for lowering the TFT leakage current into the channel region, the electrical performance of a TFT may be improved, and the thickness of a semiconductor active layer in a channel region may be changed controllably.

Abstract: An embodiment of the present invention discloses a 3D barrier substrate o and a method for manufacturing the same, and a display device in order to improve the utilization of facilities, increase the production efficiency, and decrease the cost of production. The method of manufacturing 3D barrier substrate comprises: forming a transparent electrode thin film on a substrate, and forming a passivation layer on the transparent electrode thin film; forming an transparent electrode and a passivation layer via hole by a patterning process, wherein the via hole is used for coupling the transparent electrode to the signal line; and forming a signal line, wherein the signal line is coupled to the transparent electrode through the via hole.

Abstract: A manufacturing method of a light barrier glass sheet, comprising: farming a metal layer (2) on a glass substrate (1); coating a first photoresist layer (3) on the metal layer (2), performing first exposure on the first photoresist layer (3) through a half tone mask, then performing first development on the first photoresist layer (3); removing partial region of the metal layer (2) through a first etching process; removing a partial thickness and a partial region of the first photoresist layer (3) through an ashing process; forming an insulating layer (4) on the exposed glass substrate (1), the exposed metal layer (2), the first photoresist layer (3) after the ashing process, and sidewalls of the photoresist layer (3) after the ashing process; removing the first photoresist layer (3), the insulating layer (4) on the first photoresist layer (3), and the insulating layer (4) on the sidewalls of the first photoresist layer (3) by a photoresist lifting-off process so as to form a via hole (7); forming a transpare