Patents by Inventor Huihong ZHANG

Huihong ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10200193
    Abstract: The present invention discloses a shift register capable of defending against DPA attack, comprising 4 master-slave D flip-flops, 12 two-input NAND/AND gates, 4 three-input NOR/OR gates and 40 inverters; the 4 master-slave D flip-flops are provided with reset function; it is based on TSMC 65 mm CMOS technique; as indicated by Spectre simulation verification, the shift register of the present invention has correct logic function with NED and NSD below 2.66% and 0.63% respectively under multi PVT combinations, which is provided with significant performance in defense differential power consumption analysis.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: February 5, 2019
    Assignee: Ningbo University
    Inventors: Pengjun Wang, Haoyu Qian, Huihong Zhang, Gang Li
  • Patent number: 10108663
    Abstract: A method for optimizing an area of a ternary FPRM circuit using population migration algorithm, the method including: 1) establishing an area estimation model of the ternary FPRM circuit; 2) establishing a corresponding relationship between the ternary FPRM circuit and population migration algorithm; 3) setting an attraction function for calculating the attraction of the population location in population migration algorithm; 4) setting relevant parameters of population migration algorithm; and 5) employing population migration algorithm to calculate and obtain the greatest attractive site and the greatest attraction.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: October 23, 2018
    Assignee: NINGBO UNIVERSITY
    Inventors: Pengjun Wang, Kangping Li, Huihong Zhang
  • Patent number: 10049992
    Abstract: The present invention discloses a ternary PUF unit and circuit realized by CNFET; the ternary PUF circuit comprises a ternary row decoder, a ternary column decoder, a ternary output circuit and a ternary PUF unit array; the said ternary PUF circuit is arranged into a 3n rows×3n columns matrix formed by 3n×3n ternary PUF units; the ternary PUF unit comprises a 1st CNFET transistor, a 2nd CNFET transistor, a 3rd CNFET transistor, a 4th CNFET transistor, a 5th CNFET transistor, a 6th CNFET transistor, a 7th CNFET transistor, an 8th CNFET transistor, a 9th CNFET transistor and a 10th CNFET transistor; its advantage lies in the fact that it is provided with small circuit area and higher randomness and uniqueness while ensuring proper logic function.
    Type: Grant
    Filed: August 27, 2017
    Date of Patent: August 14, 2018
    Assignee: Ningbo University
    Inventors: Pengjun Wang, Daohui Gong, Huihong Zhang, Yaopeng Kang
  • Publication number: 20180166400
    Abstract: The present invention discloses a ternary PUF unit and circuit realized by CNFET; the ternary PUF circuit comprises a ternary row decoder, a ternary column decoder, a ternary output circuit and a ternary PUF unit array; the said ternary PUF circuit is arranged into a 3n rows×3n columns matrix formed by 3n×3n ternary PUF units; the ternary PUF unit comprises a 1st CNFET transistor, a 2nd CNFET transistor, a 3rd CNFET transistor, a 4th CNFET transistor, a 5th CNFET transistor, a 6th CNFET transistor, a 7th CNFET transistor, an 8th CNFET transistor, a 9th CNFET transistor and a 10th CNFET transistor; its advantage lies in the fact that it is provided with small circuit area and higher randomness and uniqueness while ensuring proper logic function.
    Type: Application
    Filed: August 27, 2017
    Publication date: June 14, 2018
    Applicant: Ningbo University
    Inventors: Pengjun WANG, Daohui GONG, Huihong ZHANG, Yaopeng KANG
  • Publication number: 20180158515
    Abstract: A ternary sense amplifier and an SRAM array realized by the ternary sense amplifier are provided. The ternary sense amplifier comprises the 1st CNFET transistor, the 2nd CNFET transistor, the 3rd CNFET transistor, the 4th CNFET transistor, the 5th CNFET transistor, the 6th CNFET transistor, the 7th CNFET transistor, the 8th CNFET transistor, the 9th CNFET transistor, the 10th CNFET transistor, the 11th CNFET transistor, the 12th CNFET transistor and the 13th CNFET transistor; the SRAM array comprises a ternary sense amplifier, a ternary memory array, the 1st inverter, the 2nd inverter, the 3rd inverter, the 4th inverter, the 14th CNFET transistor, the 15th CNFET transistor, the 16th CNFET transistor, the 17th CNFET transistor, the 18th CNFET transistor and the 19th CNFET transistor; it features in low power consumption, less postponement and high yield of chips.
    Type: Application
    Filed: August 24, 2017
    Publication date: June 7, 2018
    Applicant: Ningbo University
    Inventors: Pengjun WANG, Daohui GONG, Yaopeng KANG, Huihong ZHANG
  • Publication number: 20180109371
    Abstract: The present invention discloses a shift register capable of defending against DPA attack, comprising 4 master-slave D flip-flops, 12 two-input NAND/AND gates, 4 three-input NOR/OR gates and 40 inverters; the 4 master-slave D flip-flops are provided with reset function; it is based on TSMC 65 mm CMOS technique; as indicated by Spectre simulation verification, the shift register of the present invention has correct logic function with NED and NSD below 2.66% and 0.63% respectively under multi PVT combinations, which is provided with significant performance in defense differential power consumption analysis.
    Type: Application
    Filed: August 28, 2017
    Publication date: April 19, 2018
    Applicant: Ningbo University
    Inventors: Pengjun WANG, Haoyu QIAN, Huihong ZHANG, Gang LI
  • Patent number: 9948464
    Abstract: The present invention discloses a multi-port PUF circuit based on NMOS zero temperature coefficient point, comprising an input register, a deviation current source, a arbiter and a disturbing module used to construct a multi-port PUF circuit; the input register comprises m D-flip-flops; the deviation current module comprises m deviation current cells; the arbiter comprises 2n current sensitive amplifiers; the disturbing module comprises n 2-input XOR gates; wherein an input challenge used to configure deviation current generation module can update IDs without replacement of hardware. In addition, it has a capability of producing a multi-bit IDs in one clock cycle. Post-layout simulation results show that the PUF circuit is provided with excellent uniqueness and randomness with reliability up to 98.2% across temperature variation from ?40° C. to 125° C., and supply voltage variation from 1.08V to 1.32V; it can be applied in information security field.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: April 17, 2018
    Assignee: Ningbo University
    Inventors: Pengjun Wang, Gang Li, Yuejun Zhang, Huihong Zhang
  • Patent number: 9886206
    Abstract: The present invention discloses a replica bit-line circuit, comprising a replica unit, the 1st inverter, the 2nd inverter, the 3rd inverter, the 4th inverter, the 5th inverter, the 6th inverter, the 7th inverter, the 8th inverter, the 9th inverter, the 1st NAND gate, the 2nd NAND gate, the 3rd NAND gate, the 1st NOR gate, the 2nd NOR gate and the 1st PMOS tube; the 2nd NOR gate is provided with the 1st input terminal, the 2nd input terminal, a set terminal and an output terminal; advantages of the present invention are stated as follows: It can inhibit feedback oscillation incurred by replica bit-line and replica wordline signal to obtain accurate wordline control signal; it can save switching power consumption of memory array by 53.7% under the power voltage of 1.2V.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: February 6, 2018
    Assignee: Ningbo University
    Inventors: Pengjun Wang, Keji Zhou, Huihong Zhang, Daohui Gong
  • Publication number: 20180024758
    Abstract: The present invention discloses a replica bit-line circuit, comprising a replica unit, the 1st inverter, the 2nd inverter, the 3rd inverter, the 4th inverter, the 5th inverter, the 6th inverter, the 7th inverter, the 8th inverter, the 9th inverter, the 1st NAND gate, the 2nd NAND gate, the 3rd NAND gate, the 1st NOR gate, the 2nd NOR gate and the 1st PMOS tube; the 2nd NOR gate is provided with the 1st input terminal, the 2nd input terminal, a set terminal and an output terminal; advantages of the present invention are stated as follows: It can inhibit feedback oscillation incurred by replica bit-line and replica wordline signal to obtain accurate wordline control signal; it can save switching power consumption of memory array by 53.7% under the power voltage of 1.2V.
    Type: Application
    Filed: March 28, 2017
    Publication date: January 25, 2018
    Applicant: Ningbo University
    Inventors: Pengjun WANG, Keji ZHOU, Huihong ZHANG, Daohui GONG
  • Publication number: 20170060943
    Abstract: A method for optimizing an area of a ternary FPRM circuit using population migration algorithm, the method including: 1) establishing an area estimation model of the ternary FPRM circuit; 2) establishing a corresponding relationship between the ternary FPRM circuit and population migration algorithm; 3) setting an attraction function for calculating the attraction of the population location in population migration algorithm; 4) setting relevant parameters of population migration algorithm; and 5) employing population migration algorithm to calculate and obtain the greatest attractive site and the greatest attraction.
    Type: Application
    Filed: August 31, 2016
    Publication date: March 2, 2017
    Inventors: Pengjun WANG, Kangping LI, Huihong ZHANG