Abstract: The present application discloses a control assembly, a method for controlling a display panel, and a display apparatus, and belongs to the field of display technologies. The control assembly is configured to: acquire brightness parameters of sub-pixels of all colors in a previous sensing cycle; determine a target color based on the brightness parameters, wherein target compensation parameters of the sub-pixels having the target color can be acquired subsequently in the current sensing cycle; and compensation for the sub-pixels having the target color based on the target compensation parameters, instead of sensing the sub-pixel having each color in a preset sequence, can be performed in the current sensing cycle.

Abstract: A semiconductor structure and a fabrication method therefor are provided. The fabrication method includes: A substrate and a stacked structure formed on the substrate are provided; vias running through the stacked structure in the vertical direction are formed; a sidewall protective layer is formed on an inner wall of each of the vias; a bottom protective layer is formed on the partial surface of the substrate exposed by each of the vias; each of the vias is filled with an isolation layer; the isolation layer s and a part of the sidewall protective layer in each of the first hole are removed, and a transistor structure is formed in each of the first holes; and the isolation layer and a part of the sidewall protective layer in each of the second holes are removed, and a capacitor structure is formed in each of the second holes.

Abstract: Provided are a ferroelectric memory, a three-dimensional ferroelectric memory, and a three-dimensional ferroelectric memory device. The ferroelectric memory includes a first word line, a first bit line, a first transistor, and a first ferroelectric capacitor pair. The first ferroelectric capacitor pair includes a first ferroelectric capacitor and a second ferroelectric capacitor, and the first ferroelectric capacitor and the second ferroelectric capacitor extend in a first direction. A control terminal of the first transistor is connected to the first word line. A second terminal of the first transistor is connected to the first bit line, and a first terminal of the first transistor is connected to upper electrode plates of the ferroelectric capacitor pair.

Abstract: The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, including active regions arranged at intervals, where the active region includes a source, a drain, and a channel region; a word line, where the word line is connected to the channel region and extends along a first direction; a bit line, where the bit line is connected to the drain or the source and extends along a second direction, the first direction being different from the second direction; and a magnetic memory cell, connected to the source or the drain.

Abstract: A three-dimensional memory array includes a first memory cell array including a plurality of memory cells stacked along a vertical direction, a plurality of word lines, and at least one bit line. Each memory cell includes a transistor and a storage node coupled in a horizontal direction and connected in parallel to each other. The transistors in the plurality of memory cells, and/or the storage nodes in the plurality of memory cells in the vertical direction are connected in series to each other. The plurality of word lines are spaced apart along the vertical direction and connected to the transistors in the plurality of memory cells in the vertical direction, respectively. The bit line extends along the vertical direction and is connected to the transistors in the plurality of memory cells in the vertical direction.

Abstract: Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure and a semiconductor structure. The method for fabricating a semiconductor structure provided by the embodiments of the present disclosure includes: providing a substrate including an array region and a peripheral region; forming a first mask layer covering the array region and the peripheral region on the substrate; forming a first device structure pattern on the first mask layer, and then forming a second device structure pattern on the first mask layer; and etching the substrate by using the first device structure pattern and the second device structure pattern as mask layer to form a peripheral region structure and an array region structure synchronously on the substrate. Technological processes are simplified, fabrication difficulties are reduced, and production efficiency is improved.

Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate. A plurality of vertical transistors arranged in an aligned manner are formed on the substrate, wherein a channel material of the vertical transistor includes an oxide semiconductor. A plurality of staggered contact pads connected to upper ends of the vertical transistors are formed on the vertical transistors, wherein a single contact pad is connected to the upper ends of an even number of vertical transistors. A magnetic tunnel junction is formed on the contact pad.

Abstract: A display apparatus is provided. The display apparatus includes a display panel; a memory; and one or more processors. The memory stores computer-executable instructions for controlling the one or more processors to detect a region configured to display a static image; in the region configured to display the static image, detect a parameter of driving transistors of subpixels of a first color in first periods, and detect a parameter of driving transistors of subpixels of a second color in second periods; and determine subpixel values of subpixels in a respective pixel in the static image in a respective frame of image comprising the static image. The parameter of driving transistors of subpixels of the first color is detected with a first frequency; the parameter of driving transistors of subpixels of the second color is detected with a second frequency; and the first frequency is higher than the second frequency.

Abstract: A semiconductor structure, a manufacturing method therefor and a memory are provided. The semiconductor structure may at least include: a plurality of aligned transistors, in which the transistors share a same source plate, channels of the transistors are located above the source plate, the channel length direction of the transistors is perpendicular to a surface of the source plate, and a material of the channels includes a single crystal semiconductor; a plurality of drain contacts, electrically connected with drains of the transistors, in which even number of the transistors share one same drain contact; and a plurality of magnetic tunnel junctions, located on the drain contacts and electrically connected with the drain contacts in one-to-one correspondence.

Abstract: The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, having a first surface; a plurality of memory cells, located on the first surface of the substrate and arranged according to a first preset pattern; and a plurality of memory contact structures, corresponding to the memory cells in a one-to-one manner, where bottom portions of the memory contact structures are in contact with top portions of the memory cells, and top portions of the memory contact structures are arranged according to a second preset pattern. The bottom portion of the memory contact structure is arranged opposite to the top portion of the memory contact structure.

Abstract: Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure and a semiconductor structure. The fabricating method includes: providing a substrate including an array region and a peripheral region; and forming, on the substrate, a first mask layer covering the array region and the peripheral region, the first mask layer having a first device structure pattern directly facing the array region and a second device structure pattern directly facing the peripheral region. Through the method for fabricating a semiconductor structure, the first mask layer having the first device structure pattern and the second device structure pattern is formed on the substrate, and then the substrate is etched by using the first device structure pattern and the second device structure pattern as mask layer to synchronously form a peripheral region structure and an array region structure on the substrate.

Abstract: The present disclosure provides a display device and a display panel. The display panel includes: multiple pixel circuit rows at a side of the substrate, where multiple pixel circuit rows form multiple pixel circuit groups distributed in a column direction, and each pixel circuit group includes at least one pixel circuit row; a gate drive circuit, including multiple shift registers, where at least one shift register is between two adjacent pixel circuit groups. Each of the shift register includes: an output sub-circuit, connected with a first node and a second node, configured to perform output based on potentials of the first node and the second node; and an input sub-circuit, connected with multiple clock signal lines to control the potentials of the first node and the second node based on potentials of multiple clock signal lines.

Abstract: A display apparatus is provided. The display apparatus includes a display panel; a memory; and one or more processors. The memory stores computer-executable instructions for controlling the one or more processors to detect a region configured to display a static image; in the region configured to display the static image, detect a parameter of driving transistors of subpixels of a first color in first periods, and detect a parameter of driving transistors of subpixels of a second color in second periods; and determine subpixel values of subpixels in a respective pixel in the static image in a respective frame of image comprising the static image. The parameter of driving transistors of subpixels of the first color is detected with a first frequency; the parameter of driving transistors of subpixels of the second color is detected with a second frequency; and the first frequency is higher than the second frequency.

Abstract: The present application relates to a memory device and a preparing method thereof. The memory device includes: a substrate, and a plurality of memory cells disposed in an array on the substrate. Memory cells in adjacent rows are staggered in a row direction, and a distance between two adjacent memory cells in any row is a first distance. Memory cells in adjacent columns are staggered in a column direction, and a staggered distance is less than the first distance.

Abstract: Provided is a compensation method for a display device. The method includes: acquiring first detection voltages of the plurality of subpixels during a first shutdown compensation process; acquiring first position indication information based on the first detection voltages of the plurality of subpixels; and determining first compensation data based on the first position indication information. The first position indication information indicates column positions of pixels to which a plurality of first subpixels of the plurality of subpixels belong. The first compensation data includes first threshold compensation voltages of the plurality of subpixels, and an absolute value of a difference between the first threshold compensation voltage of the first subpixel and a first reference value is less than an absolute value of a difference between a second threshold compensation voltage of the first subpixel in the first compensation data and the first reference value.

Abstract: A semiconductor structure includes: a Magnetic Random Access Memory (MRAM) cell, including a bottom electrode, a Magnetic Tunnel Junction (MTJ) stack and a top electrode; an insulating layer covering a sidewall partially and a top surface of the MRAM cell; a first dielectric layer, a stop layer and a second dielectric layer sequentially stacked on the insulating layer; and a top electrode contact hole penetrating through the second dielectric layer, the stop layer, the first dielectric layer and the insulating layer, and extending to the top electrode, where the top electrode contact hole includes a first portion and a second portion connected with each other in the stop layer, and a radial width of the second portion in contact with the top electrode is gradually decreased with an increase in a depth of the top electrode contact hole. Method for manufacturing the structure and semiconductor memory are also provided.

Abstract: Embodiments of the present disclosure provide a method of manufacturing a magnetic random access memory (MRAM) and a MRAM. The method includes: preparing a bottom electrode through hole, a bottom electrode, a magnetic tunnel junction (MTJ), a top electrode, and an insulating layer sequentially on a semiconductor substrate; forming a first interlayer dielectric layer on the insulating layer; forming an etching stop layer on the first interlayer dielectric layer; forming a second interlayer dielectric layer on the etching stop layer; etching a part of the second interlayer dielectric layer above the top electrode to the etching stop layer, and forming a first trench; performing a self-alignment implantation inclined on a part of the first interlayer dielectric layer corresponding to a bottom of the first trench; continuously etching through the first trench to a top end surface of the top electrode, and forming a second trench.

Abstract: Genome-wide data is obtained, and data cleansing, data sparsity processing and bioinformatics feature extraction are performed on the obtained genome-wide data; model construction is performed based on the sparsity-processed genome-wide data and the bioinformatics features to obtain a preliminary hybrid model; model training, regularization, and interpretability enhancement are performed on the preliminary hybrid model to obtain a trained model weight and an interpretability analysis corresponding to the trained model weight; learning and uncertainty estimation are performed based on the trained model weight and to-be-predicted genome-wide data on the hybrid model to obtain an integrated prediction result and uncertainties corresponding to the integrated prediction result; and personalized medical advice and decision assistance are performed based on the integrated prediction result, the interpretability analysis, and the uncertainties corresponding to the integrated prediction result.

Abstract: A method and apparatus for compensating a display defect, a medium, an electronic device, and a display apparatus. The method comprises: selecting a pixel value of a normal region at the periphery of a defective region to perform interpolation with respect to the defective region, so as to determine a compensation pixel value for the defective region at a preset brightness level; and updating a pixel value of the defective region at the preset brightness level with the compensation pixel value.

Abstract: A display module includes a display panel, at least one bonding circuit board, a plurality of chip-on-films, and a plurality of buffer devices. The at least one bonding circuit board each include first differential lines, and a first differential line includes a P-polarity differential sub-line and an N-polarity differential sub-line. An end of a chip-on-film is connected to the first differential line, and the other end of the chip-on-film is connected to the display panel. The buffer devices are arranged on the bonding circuit board, a buffer device is connected to ends, proximate to the chip-on-film, of the P-polarity differential sub-line and the N-polarity differential sub-line, and the buffer device is configured to reduce signal reflection between the first differential line and the chip-on-film.