Abstract: The present invention discloses a same-cavity integrated vertical high-speed multistage superfine pulverizing device and method for walnut shells. The same-cavity integrated vertical high-speed multistage superfine pulverizing device for walnut shells includes a double-channel sliding type feeding device and a same-cavity integrated vertical pulverizing device. The same-cavity integrated vertical pulverizing device includes a material lifting disc and a same-cavity integrated vertical pulverizing barrel. A first-stage coarse crushing region, a second-stage fine crushing region, a third-stage pneumatic impact micro pulverizing region and a fourth-stage airflow mill superfine pulverizing region are disposed in the same-cavity integrated vertical pulverizing barrel.

Abstract: Disclosed are a negative pressure driven sucking apparatus and a preparation method thereof. The sucking apparatus comprises a sucking disc body, wherein a negative pressure cavity is formed in the middle of the sucking disc body, and the negative pressure cavity is connected with a vacuum line, and the bottom of the negative pressure cavity having a flexible section, and an annular wedge-shaped microstructure is formed at the bottom of the body surrounding the flexible section. Stable loading and release processes of the annular wedge-shaped microstructure are realized.

Abstract: Disclosed are a negative pressure driven sucking apparatus and a preparation method thereof. The sucking apparatus comprises a sucking disc body, wherein a negative pressure cavity is formed in the middle of the sucking disc body, and the negative pressure cavity is connected with a vacuum line, and the bottom of the negative pressure cavity having a flexible section, and an annular wedge-shaped microstructure is formed at the bottom of the body surrounding the flexible section. Stable loading and release processes of the annular wedge-shaped microstructure are realized.

Abstract: Display panels and display devices, in order to provide a new full screen solution that can realize fingerprint recognition. The display panel includes a substrate, a display film layer located on a surface of the substrate and a touch film layer located above the display film layer. The display panel further includes a fingerprint recognition film layer including a plurality of image sensing elements arranged in an array, and an orthographic projection of the image sensing element on the substrate is not overlapped with an orthographic projection of the light-emitting sub-pixels in the display film layer on the substrate.

Abstract: The present disclosure relates to micro-LED chips, methods for manufacturing the same, and display devices. The micro-LED chip includes: a driving backplane including at least one first electrode, a groove being provided above the first electrode, and the first electrode being located at a bottom of the groove; the groove being filled with a conductive material, and the conductive material being obtained by curing a corresponding conductive ink; and a light emitting chip including at least one second electrode; and the first electrode is connected to the second electrode through the conductive material.

Abstract: The present disclosure relates to the field of display technologies, and a stretchable display device, a method for manufacturing the same, and an electronic device are disclosed. In the present disclosure, the device includes: a stretchable substrate, a stretchable wire and a plurality of rigid islands. The stretchable wire and the plurality of rigid islands are all arranged on the stretchable substrate. The plurality of rigid islands are spaced apart on the stretchable substrate, and a pixel encapsulation body is formed on the rigid island. The stretchable wire is connected to the pixel encapsulation body to form a power supply circuit for the pixel encapsulation body. The present disclosure realizes a reliable electrical connection condition, effective encapsulation and structural stability of light-emitting pixels under stretching conditions by connecting the light-emitting pixel that is separately encapsulated on each rigid island, to one another through the stretchable wire.

Abstract: The present disclosure relates to a light emitting device, a method for preparing the same and a display device. The light emitting device includes a cathode layer, a quantum dot light emitting layer, a hole injection layer and an anode layer which are laminated. The hole injection layer includes a complex metal oxide film comprising two metal oxides that is at least partially oxidated.

Abstract: The disclosure relates to a quantum dot light-emitting diode device and a manufacturing method and an apparatus thereof, which are used to alleviate the problem of interface quenching caused by the large density of the defect state of nanoparticles of the electron transport layer in the prior art. The method includes: dissolving a polyelectrolyte and nanoparticles having inorganic semiconductor properties to form a first mixed solution; depositing the first mixed solution on one surface of the formed quantum dot light-emitting layer to form an electron transport layer containing the polyelectrolyte and the nanoparticles. The end groups carried by at least a portion of the polyelectrolyte are capable of filling surface defects of the nanoparticles in the electron transport layer.

Abstract: The present application relates to a light emitting diode chip including: a first semiconductor layer and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer are laminated to each other, and have an exposed upper surface respectively. An electrode is provided on the upper surfaces of the first semiconductor layer and the second semiconductor layer respectively. The electrode has a first recess in a direction perpendicular to the upper surface.

Abstract: An LED chip provided by an embodiment includes a first semiconductor layer; an active layer and a second semiconductor layer located sequentially on the first semiconductor layer. A first contact electrode extends through the active layer and the second semiconductor layer and is electrically connected to the first semiconductor layer; a second contact electrode is located on the second semiconductor layer and is electrically connected to the second semiconductor layer; a first extension electrode is located on the first contact electrode and is electrically connected to the first contact electrode, the first extension electrode comprises a plurality of concave spots for soldering; and a second extension electrode is located on the second contact electrode, electrically connected to the second contact electrode and isolated from the first extension electrode, and the second extension electrode includes a plurality of concave spots for soldering.

Abstract: A method for manufacturing a micro-LED display screen includes: forming an N-type GaN layer, a quantum-well light-emitting layer, and a P-type GaN layer on a sapphire substrate sequentially; etching the P-type GaN layer, the quantum-well light-emitting layer, and the N-type GaN layer from top to bottom, to form a first trench; forming an ITO layer on the surface of the P-type GaN layer, and etching the ITO layer to form a second trench; generating an N-type contact electrode in the first trench; generating a reflective electrode having a longitudinal cross-section in a shape with a wide upper side and a narrow lower side, respectively, on an upper surface of the N-type contact electrode and in the second trench; depositing an insulating layer on a surface of the micro-LED chip, and etching the insulating layer to expose the reflective electrodes; and soldering a driving circuit substrate to the reflective electrode.

Abstract: A touch control display screen includes: a display device layer including a display device elastic substrate and a display device disposed in the display device elastic substrate; and a touch control layer disposed on a surface of the display device elastic substrate. As the display device is disposed into the elastic substrate, it is possible for the touch control display screen to achieve the function of stretchability by the stress produced in the elastic substrates' stretching.

Abstract: The present disclosure relates to micro-LED chips, methods for manufacturing the same, and display devices. The micro-LED chip includes: a driving backplane including at least one first electrode, a groove being provided above the first electrode, and the first electrode being located at a bottom of the groove; the groove being filled with a conductive material, and the conductive material being obtained by curing a corresponding conductive ink; and a light emitting chip including at least one second electrode; and the first electrode is connected to the second electrode through the conductive material.

Abstract: The present disclosure discloses a stretchable display panel and a method of manufacturing the same. The stretchable display panel includes an elastic base layer and a number of array-distributed display units embedded in the elastic base layer. At least one of the display units include a pixel unit and a rigid protection body, and the rigid protection body includes at least a rigid sidewall disposed on at least one side of the pixel units.

Abstract: The present disclosure relates to a light emitting device, a method for preparing the same and a display device. The light emitting device includes a cathode layer, a quantum dot light emitting layer, a hole injection layer and an anode layer which are laminated. The hole injection layer includes a complex metal oxide film comprising two metal oxides that is at least partially oxidated.

Abstract: The present disclosure relates to the field of display technologies, and a stretchable display device, a method for manufacturing the same, and an electronic device are disclosed. In the present disclosure, the device includes: a stretchable substrate, a stretchable wire and a plurality of rigid islands. The stretchable wire and the plurality of rigid islands are all arranged on the stretchable substrate. The plurality of rigid islands are spaced apart on the stretchable substrate, and a pixel encapsulation body is formed on the rigid island. The stretchable wire is connected to the pixel encapsulation body to form a power supply circuit for the pixel encapsulation body. The present disclosure realizes a reliable electrical connection condition, effective encapsulation and structural stability of light-emitting pixels under stretching conditions by connecting the light-emitting pixel that is separately encapsulated on each rigid island, to one another through the stretchable wire.

Abstract: Display panels and display devices, in order to provide a new full screen solution that can realize fingerprint recognition. The display panel includes a substrate, a display film layer located on a surface of the substrate and a touch film layer located above the display film layer. The display panel further includes a fingerprint recognition film layer including a plurality of image sensing elements arranged in an array, and an orthographic projection of the image sensing element on the substrate is not overlapped with an orthographic projection of the light-emitting sub-pixels in the display film layer on the substrate.

Abstract: The present disclosure discloses a stretchable display panel and a method of manufacturing the same. The stretchable display panel includes an elastic base layer and a number of array-distributed display units embedded in the elastic base layer. At least one of the display units include a pixel unit and a rigid protection body, and the rigid protection body includes at least a rigid sidewall disposed on at least one side of the pixel units.

Abstract: The disclosure relates to a quantum dot light-emitting diode device and a manufacturing method and an apparatus thereof, which are used to alleviate the problem of interface quenching caused by the large density of the defect state of nanoparticles of the electron transport layer in the prior art. The method includes: dissolving a polyelectrolyte and nanoparticles having inorganic semiconductor properties to form a first mixed solution; depositing the first mixed solution on one surface of the formed quantum dot light-emitting layer to form an electron transport layer containing the polyeleotrolyte and the nanoparticles. The end groups carried by at least a portion of the polyelectrolyte are capable of filling surface defects of the nanoparticles in the electron transport layer.

Abstract: The disclosure relates to the field of light-emitting device technology, and in particular to a quantum dot light-emitting diode device and a manufacturing method, an apparatus thereof. The device includes: a quantum dot light-emitting layer, a first transport layer located over the quantum dot light-emitting layer, a first barrier layer located between the quantum dot light-emitting layer and the first transport layer, the first barrier layer containing a polymer electrolyte, which is configured to block at least a portion of the nanoparticles in the first transport layer from leaking into the quantum dot light-emitting layer.