Abstract: Disclosed is a dip-coating method as a method of coating an outer surface of a target mold including steps of: preparing and putting a supporting liquid in a container; applying a coating material to the target mold; dipping the target mold in the supporting liquid; shaking the target mold surrounded by the coating material in the supporting liquid; curing the coating material surrounding the target mold in the supporting liquid; and taking out the coated target mold from the supporting liquid.

Abstract: A method for producing a gas diffusion layer for a fuel cell, includes a substrate preparation step of preparing a substrate for the gas diffusion layer; a slurry preparation step of preparing a slurry for a microporous layer containing carboxymethyl cellulose (CMC) and polytetrafluoroethylene (PTFE) diffused in solvent; a microporous layer forming step of forming a microporous layer by applying the slurry onto the substrate; and a heat-treatment step of controlling the hydrophobicity of the gas diffusion layer by heating the substrate having the microporous layer applied thereonto. Also disclosed is a gas diffusion layer produced thereby. The method may control the hydrophobicity of the gas diffusion layer by variably controlling the heat-treatment temperature.

Abstract: The washing machine includes a cabinet, a drum installed inside the cabinet, and a fan assembly to guide heated air into the drum. A fan assembly includes a shroud provided with an air inlet hole, a hub rotated by a driving motor, a plurality of blades provided along a circumferential direction of the hub to guide the air introduced through the air inlet hole in the circumferential direction of the hub, and a scroll guiding the air guided in the circumferential direction of the hub into the drum. A partition wall prevents the air guided in the circumferential direction of the hub from being re-introduced into the air inlet hole. The blade includes a shroud contact portion in contact with the shroud and a hub contact portion in contact with the hub. An inflection point is formed between the shroud contact portion and the hub contact portion.

Abstract: A method for fabricating a capacitor includes forming a first electrode, forming a dielectric layer stack on the first electrode, the dielectric layer stack including an initial hafnium oxide layer and a seed layer having a doping layer embedded therein, forming a thermal source layer on the dielectric layer stack to crystallize the initial hafnium oxide into tetragonal hafnium oxide, and forming a second electrode on the thermal source layer.

Abstract: The present invention discloses a method for diagnosing cancer comprising a step of detecting active protein kinase C? in urine.

Abstract: The present disclosure is directed to large-pore germanosilicate compositions designated CIT-13/OH and CIT-14/IST, the two large-pore germanosilicate each having a three-dimensional framework with 10- and 14-membered ring channels and 8- and 12-membered ring channels, respectively. The disclosure also sets forth methods for converting the former to the latter under conditions consistent with an inverse sigma transformation. Uses of the large-pore germanosilicate compositions are also disclosed.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.

Abstract: A multi-band light emitting diode is provided. The multi-band light emitting diode includes a first conductivity type semiconductor layer, a V-pit generation layer disposed on the first conductivity type semiconductor layer and having a first V-pit of a first inlet width, a stress relief layer disposed on the V-pit generation layer and providing a second V-pit of a second inlet width greater than the first inlet width of the V-pit on the first V-pit, an active layer disposed on the stress relief layer and including a first active layer region formed on a flat surface of the stress relief layer and a second active layer region formed in the second V-pit, and a second conductivity type semiconductor layer disposed on the active layer.

Abstract: A semiconductor device includes: a first electrode; a second electrode; and a dielectric layer stack positioned between the first electrode and the second electrode, the dielectric layer stack including a first anti-ferroelectric layer, a second anti-ferroelectric layer, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric.

Abstract: A method for fabricating a capacitor includes forming a first electrode, forming a dielectric layer stack on the first electrode, the dielectric layer stack including an initial hafnium oxide layer and a seed layer having a doping layer embedded therein, forming a thermal source layer on the dielectric layer stack to crystallize the initial hafnium oxide into tetragonal hafnium oxide, and forming a second electrode on the thermal source layer.

Abstract: A light emitting diode includes a first conductivity type nitride semiconductor layer, a V-pit generation layer disposed on the first conductivity type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer, a stress relief layer disposed between the V-pit generation layer and the active layer, and a second conductivity type nitride semiconductor layer disposed on the active layer. The stress relief layer and the active layer may be formed in the V-pits, as well as on a flat surface of the V-pit generation layer, and the active layer may emit light of a multi-band spectrum.

Abstract: The present invention relates to an orally-administered gene carrier and a use thereof, and more specifically, to: an oral gene carrier comprising, at the C-terminus of an immunoglobulin Fc region, a linker formed from cationic arginine and enabling the condensation of an anionic gene; and an oral composition for preventing, ameliorating or treating metabolic diseases, the composition comprising the gene carrier and the GLP-1 gene as active ingredients. The gene carrier, according to the present invention, may be usefully employed as an orally-administered carrier for various genes, and especially, is expected to be usable for preventing, ameliorating or treating metabolic diseases, such as diabetes and obesity, by effectively transferring the GLP-1 gene.

Abstract: A semiconductor device includes: a first electrode; a second electrode; and a multi-layered stack including a hafnium oxide layer of a tetragonal crystal structure which is positioned between the first electrode and the second electrode, wherein the multi-layered stack includes: a seed layer for promoting tetragonal crystallization of the hafnium oxide layer and having a tetragonal crystal structure; and a booster layer for boosting a dielectric constant of the hafnium oxide layer.

Abstract: One embodiment of the present invention provides an intersection point pattern recognition system using sensor data of a mobile robot, comprising: a mobile robot that autonomously drives by using sensor data received from a sensor unit and an intersection point pattern recognition model provided by a management server; and the management server that receives usage environment information of the mobile robot and generates the intersection point pattern recognition model of the mobile robot to provide the intersection pattern recognition model to the mobile robot, wherein the management server comprises: a map generation unit for receiving the usage environment information of the mobile robot and generating a route map of the mobile robot on the basis of the usage environment information; a normalization unit for generating a virtual map by normalizing the route map according to a preset rule; and a learning unit for generating the intersection point pattern recognition model by using the virtual map and the se

Abstract: A semiconductor device includes: a first electrode; a second electrode; and a dielectric layer stack positioned between the first electrode and the second electrode, the dielectric layer stack including a first anti-ferroelectric layer, a second anti-ferroelectric layer, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric.

Abstract: A tape measure having a light emitting device includes a housing, a reel received in the housing, and a blade wound on the reel to be extended or retracted through an inlet of the housing, and further includes a first case, a second case coupled with the first case to form the housing, a light emitting portion positioned in front of the center of the reel around the inlet of the housing, and a light emitting circuit portion positioned in the rear side of the center of the reel by facing the light emitting portion, wherein the light emitting circuit portion includes a circuit board disposed on a rear lower side of the housing, and the first case and the second case provide circuit receiving spaces for receiving the circuit board, respectively.

Abstract: Proposed is a vehicle air conditioner, which performs cooling and heating by supplying cold air and hot air in an interior of the vehicle. The vehicle air conditioner includes an intake unit installed at an engine room and configured to suction and blows internal and external air to the interior, a heat exchanger unit configured to cool or heat and supply air blown from the intake unit, a case cover installed on an outer surface of the intake unit to cover the intake unit, and a case soundproofing member installed between an intake case of the intake unit and the case cover and configured to block noise that is transmitted to the intake case from the outside of the case cover.

Abstract: An air conditioner for a vehicle may include a first air conditioner provided on the engine compartment side with respect to a dash panel, and including an intake unit of suctioning internal or external air and blowing same to the vehicle interior side; and a second air conditioner provided on the vehicle interior side with respect to the dash panel, and including a duct for discharging conditioned air to the vehicle interior side. The dash panel has a through hole formed therein, and has an air guide which connects the first air conditioner and the second air conditioner to each other through the through hole.

Abstract: The present disclosure relates to an air conditioner capable of inducing airflow blown through a blowing port to blow in a substantially horizontal direction. The air conditioner includes a housing including a blowing port, and an airflow guide unit installed in the blowing port to be rotatable about a rotation shaft, wherein the airflow guide unit includes a main blade configured to cover the blowing port, and a pair of sub blades spaced downwardly apart from the main blade and disposed in a flow passage of the blowing port such that outer surfaces thereof are in contact with airflow in the blowing port as a whole, and having different inclination angles.

Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes an n-type nitride semiconductor layer, a V-pit generation layer, a sub-emission layer, an active layer, and a p-type nitride semiconductor layer. The sub-emission layer is disposed on the n-type nitride semiconductor layer and having V-pits. The active layer is disposed on the sub-emission layer and having a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer. The p-type nitride semiconductor layer is disposed on the active layer. An energy band gap of the sub-emission layer is wider than that of the first well region of the active layer. The light emitting diode emits light having at least three different peak wavelengths at a single chip level.