Abstract: A memory controller includes a fault predictor which predicts a fault which causes an error occurring in a memory device, an error correction code (ECC) manager which classifies a type of the fault based on the predicted fault, and a plurality of ECC engines which perform ECC in parallel depending on the classified type of the faults. The fault predictor includes a memory error profiler which receives raw data related to the error and processes the raw data into an error profile that is data available for machine learning, and a memory fault prediction network which receives the error profile as an input, performs the machine learning using the error profile, and predicts the fault which causes the error.

Abstract: Disclosure relates to an electrochemical lithium recovery system, and the electrochemical lithium recovery system is characterized by having a first flow electrode module that selectively extracts lithium ions from an object solution containing a waste battery active material by electrical attraction, and a second flow electrode module recovering the lithium ions extracted by the first flow electrode module, by the electric repulsive force. Accordingly, the electrochemical lithium recovery system does not require a high temperature treatment process, does not require a large amount of chemicals, and can ensure high recovery efficiency.

Abstract: A buck-boost converter includes a first switch connected between an input terminal that receives an input voltage and a first terminal of an inductor, a second switch connected between the first terminal of the inductor and an output terminal that outputs an output voltage, a third switch connected between a second terminal of the inductor and a ground terminal, and a fourth switch connected between the second terminal of the inductor and an inverting input terminal that receives an inverted input voltage obtained by inverting the input voltage.

Abstract: Provided is a ceiling storage system for increasing storage capacity by utilizing a ceiling space inside a fab. The ceiling storage system includes a first overhead rack including a plurality of storage positions for storing a plurality of articles; first and second support rails above the first overhead rack and extending in one direction; a first driving rail above the first overhead rack and in parallel with the first and second support rails; a second driving rail coupled to the first and second support rails and the first driving rail and moving along the first and second support rails and the first driving rail; and a first transport vehicle including a carriage coupled to the second driving rail and moving along the second driving rail, and a hoist and a hand unit installed on the carriage and for loading and unloading the articles to and from the first overhead rack.

Abstract: A vehicle suspension control apparatus includes a mode determination device that determines a suspension control mode corresponding to an identified front road surface, in response to the front road surface of a vehicle being identified, a suspension control amount calculation device that calculates an amount of suspension control for passing through the identified front road surface, based on the determined suspension control mode, and a controller that controls a suspension of the vehicle based on the calculated amount of suspension control.

Abstract: An image sensor includes a substrate, a photoelectric conversion region in the substrate with the substrate defining a substrate trench on the photoelectric conversion region, a floating diffusion region adjacent to a side surface of the substrate trench, in the substrate, a gate dielectric film that extends along the side surface and a lower surface of the substrate trench and a transfer gate electrode which includes a lower gate that fills a portion of the substrate trench on the gate dielectric film and has a first width, and an upper gate that has a second width smaller than the first width on the lower gate. The gate dielectric film includes a lower dielectric film interposed between the substrate and the lower gate and has a first thickness, and an upper dielectric film adjacent to the floating diffusion region and has a second thickness greater than the first thickness.

Abstract: A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

Abstract: A loader device includes a frame, a first opening formed in a first side surface of the frame, a second opening formed on a second side surface of the frame, a cavity that connects the first opening and the second opening, a transport unit in the cavity, a first sensor that senses a presence or absence of a first substrate carrier, a second sensor that senses access of a person, and a controller that receives a first sensor signal from the first sensor and receives a second sensor signal from the second sensor. In response to the first sensor signal, the controller controls the transport unit to not transfer a second substrate carrier to the first opening, controls the transport unit to pick up the first substrate carrier from the first opening, and interrupts operation of the transport unit in response to the second sensor signal.

Abstract: An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.

Abstract: A flow-electrode cartridge unit and a submerged flow-electrode capacitive deionization device using the same are proposed. The flow-electrode cartridge unit includes a pair of porous current collector plates arranged to face each other in a spaced apart state from each other in a first direction, a pair of ion separation membranes positioned on respective outer surfaces of the porous current collector plates in the first direction, a channel frame for wrapping around the pair of porous current collector plates and the pair of ion separation membranes to expose each of the ion separation membranes in the first direction, thereby forming a flow electrode channel between the pair of porous current collector plates, a pair of communication holes formed in the channel frame and communicating the flow electrode channel to an outside, and an electrode terminal formed in the channel frame and electrically connected to the porous current collector plates.

Abstract: The present invention relates to an apparatus for generating data quality information of electric power equipment, the apparatus including a data collector configured to collect a piece of measured data of electric power equipment, a storage configured to store a previous value and a set value for the piece of measured data, and a quality value generator configured to generate a quality value for the piece of measured data by applying the piece of measured data, the previous value, and the set value to a predetermined logic circuit.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: A rotating device includes a housing; a variable guide vane module provided on a surface of the housing; and a housing cover covering the variable guide vane module. The variable guide vane module includes a first module, which comprises a vane case that has a cylinder shape and that is provided in the housing, and further comprises a first link that is provided on the vane case; and a second module, which comprises a shroud case that is seated between the housing and the vane case, and further comprises a second link that is provided in the shroud case and is configured to be driven in accordance with driving of the first link. The variable guide vane module is configured to be separable into at least two modules, including the first module and the second module.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: A duty cycle correction device includes a duty cycle correction circuit and a duty cycle control circuit. The duty cycle correction circuit corrects a duty cycle of an input clock signal based on a duty cycle control signal and a duty cycle resolution control signal to generate an output clock signal. The duty cycle control circuit generates the duty cycle control signal by detecting a duty cycle of the output clock signal, generates a duty cycle correction completion signal when duty cycle correction is completed, and recorrects the duty cycle of the input clock signal by activating the duty cycle resolution control signal when the duty cycle correction completion signal is activated at an earlier timing than a reference time.

Abstract: An article transfer system includes a plurality of stage modules respectively provided at a plurality of layers, an interlayer transfer apparatus configured to transfer an article to each of the plurality of stage modules, and a plurality of loading and unloading apparatus respectively provided on each stage module of the plurality of stage modules, the plurality of loading and unloading apparatus configured to load an article onto respective stage modules of the plurality of stage modules. The interlayer transfer apparatus includes a mast frame extending so as to intersect each stage module of the plurality of stage modules, and a plurality of carriage units configured to move along a length direction of the mast frame, transfer articles, and move in a parallel manner with each other.