Patents by Inventor Hun Lim

Hun Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resin molding apparatus including release film feeder
    Patent number: 11569097
    Abstract: A resin molding apparatus including a release film feeder configured to feed a release film is provided. The release film feeder including a feeding roller around which the release film is wound, a gripper configured to grip an end portion of the release film fed from the feeding roller, a support table configured to support the release film fed by a horizontal movement of the gripper in an X direction, the support table configured to horizontally move at least one of in the X direction or in a Y direction perpendicular to the X direction, the X and Y directions defining a surface parallel to a surface of the support table, and a position detecting sensor on the support table and configured to detect position information of the release film may be provided.
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: January 31, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chae-hun Lim, Kun-sil Lee
  • Composition for etching and method for manufacturing semiconductor device using same
    Patent number: 11566178
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: January 31, 2023
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • VEHICLE SUSPENSION CONTROL APPARATUS AND METHOD THEREOF
    Publication number: 20230027706
    Abstract: A vehicle suspension control apparatus includes a mode determination device that determines a suspension control mode corresponding to an identified front road surface, in response to the front road surface of a vehicle being identified, a suspension control amount calculation device that calculates an amount of suspension control for passing through the identified front road surface, based on the determined suspension control mode, and a controller that controls a suspension of the vehicle based on the calculated amount of suspension control.
    Type: Application
    Filed: February 18, 2022
    Publication date: January 26, 2023
    Inventors: Hyung Jin Kim, Sung Ki Jung, Dong Hun Lim, Yoon Kab Noh, Jong Hoon Choi, Young Jae Kim, In Yong Jung, Byung Joo Kim
  • Antifreezing coolant composition not including glycol
    Patent number: 11549044
    Abstract: Disclosed is an antifreezing coolant composition, which does not include glycol but includes environmentally friendly materials, such as a carboxylic acid salt, an anthranilamide compound, a corrosion inhibitor and a triazole compound. The antifreezing coolant composition may form a thin film on the metal surface in cooling systems for vehicles to thereby exhibit high corrosion resistance at low and high temperatures, superior antifreezing performance at low temperatures, and superior cooling performance at high temperatures.
    Type: Grant
    Filed: December 9, 2020
    Date of Patent: January 10, 2023
    Assignees: Hyundai Motor Company, Kia Motors Corporation, KD FINECHEM CO. LTD.
    Inventors: Sung Uk Lee, Jin Myeong Park, Jae Hun Lim, Hong Ki Lee
  • Composition for etching and method for manufacturing semiconductor device using same
    Patent number: 11530355
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: December 20, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Composition for etching and manufacturing method of semiconductor device using the same
    Patent number: 11512226
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: November 29, 2022
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Composition for etching and manufacturing method of semiconductor device using the same
    Patent number: 11499073
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: November 15, 2022
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Electronic apparatus and method for controlling electronic apparatus
    Patent number: 11503369
    Abstract: An electronic apparatus maps each of a plurality of services to a channel number and provides an electronic program guide (EPG) that includes a broadcast channels and the plurality of services mapped to channel numbers of the electronic apparatus.
    Type: Grant
    Filed: December 11, 2019
    Date of Patent: November 15, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Hun Lim
  • Composition for etching and method for manufacturing semiconductor device using same
    Patent number: 11479720
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: October 25, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • SUBSTRATE TRANSFER DEVICE AND SUBSTRATE TRANSFER METHOD
    Publication number: 20220336241
    Abstract: A substrate transfer device includes a transfer unit configured to transfer, in a first direction, a carrier in which substrates are stored, an upper interface unit configured to move the transfer unit, a lower interface unit configured to receive the carrier from the transfer unit, and a controller configured to control the upper interface unit and the lower interface unit integrally such that the transfer unit and the carrier move in the first direction at the same time.
    Type: Application
    Filed: December 6, 2021
    Publication date: October 20, 2022
    Inventors: Young Wook Kim, Sang Min Kim, Ji Hun Kim, Gi-Nam Park, Chul-Jun Park, Yong-Jun Ahn, Youn Gon Oh, Byung Kook Yoo, Hyun Woo Lee, Jeong Hun Lim
  • Composition for etching
    Patent number: 11466207
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: October 11, 2022
    Inventors: Jin Uk Lee, Jae Wan Park, Jung Hun Lim
  • Composition for etching
    Patent number: 11466208
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: October 11, 2022
    Inventors: Jin Uk Lee, Jae Wan Park, Jung Hun Lim
  • OXIDE FILM COATING SOLUTION AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME
    Publication number: 20220320317
    Abstract: A method for manufacturing a semiconductor device, the method including forming a fin type pattern including a lower pattern and an upper pattern on a substrate, the upper pattern including a plurality of sacrificial layers and a plurality of sheet patterns alternately stacked on the lower pattern; forming a field insulating film on the substrate and the fin type pattern such that the field insulation film covers side walls of the lower pattern; forming a passivation film on the field insulating film such that the passivation film extends along an upper surface of the field insulating film; and removing the plurality of sacrificial layers after forming the passivation film.
    Type: Application
    Filed: March 14, 2022
    Publication date: October 6, 2022
    Applicant: Soulbrain Co., Ltd.
    Inventors: Chang Ju YEOM, Chang Su JEON, Jung Min OH, Sang Won BAE, Jae Sung LEE, Hyo San LEE, Jung Hun LIM
  • Composition for etching and method for manufacturing semiconductor device using same
    Patent number: 11421156
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: August 23, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Color and luminance measuring device including filter unit
    Patent number: 11422035
    Abstract: Disclosed is a color and luminance measuring device including a filter unit including a case which covers the entire device and has a light incident part formed on one side thereof through which measured light emitted from an object to be measured is incident, a measurement unit which measures luminance and a color by receiving the measured light in the case, and a filter unit which is disposed on a movement path of the measured light in the case to selectively control the luminance of the measured light transmitted to the measurement unit and transmit the measured light, wherein the filter unit reduces the luminance of the measured light to a predetermined level when the measured light has luminance of a predetermined level or higher and transmits the measured light to the measurement unit.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: August 23, 2022
    Assignee: ANI. Co. Ltd
    Inventors: Byung Jun Oh, Kyu Ho Lee, Kyu Seok Kim, Chang Hun Lim, Seung Yub Choi, Hyun Seock Oh, Taek Gyu Song
  • Battery Pack
    Publication number: 20220263189
    Abstract: A battery pack includes a number of secondary battery cells, and a frame unit including a number of sealed compartments in which the number of secondary battery cells are dispersedly accommodated, and configured to, when flames or gas are generated in a secondary battery cell disposed in one of the compartments, discharge the flames or gas.
    Type: Application
    Filed: February 16, 2022
    Publication date: August 18, 2022
    Inventors: Jeong Woon Ko, Bon Seok Ku, Ja Sung Yun, Dong Hun Lim, Jun Hee Jung, Sei Hoon Cho, Ha Neul Choi, Jae Il Hwang
  • Composition for etching and manufacturing method of semiconductor device using the same
    Patent number: 11414569
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: August 16, 2022
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Composition for etching and method for manufacturing semiconductor device using same
    Patent number: 11390806
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: July 19, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Etching composition and method for manufacturing semiconductor device using the same
    Patent number: 11390805
    Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: July 19, 2022
    Assignees: SAMSUNG ELECTRONICS CO., LTD., Soulbrain Co., Ltd.
    Inventors: Jae Sung Lee, Jung Hun Lim, Mihyun Park, Changsu Jeon, Jung-Min Oh, Subin Oh, Hyosan Lee
  • Composition for etching and method for manufacturing semiconductor device using same
    Patent number: 11390807
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: July 19, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park