Patents by Inventor HUNG AN KAO

HUNG AN KAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gate structure and method of making the same
    Patent number: 8076207
    Abstract: A method of making a gate structure includes the following steps. First, a gate is formed. Then, a first silicon oxide layer, a silicon nitride layer, and a second silicon oxide layer are formed to cover the gate from bottom to top. Later, a dry etching is performed to etch the second silicon oxide layer. After that, a wet etching is performed to etch the silicon nitride layer and the first silicon oxide layer. The aforesaid wet etching is performed by utilizing an RCA cleaning solution. Furthermore, the silicon nitride layer is formed by the SINGEN process. Therefore, the first and second silicon oxide layer and the silicon nitride layer can be etched together by the RCA cleaning solution.
    Type: Grant
    Filed: July 14, 2009
    Date of Patent: December 13, 2011
    Assignee: United Microelectronics Corp.
    Inventors: Ching-Hung Kao, Chien-En Hsu
  • Stereo projection optical system using LCD to separate left and right eye images
    Patent number: 8057042
    Abstract: A stereo projection optical system includes an image assimilator and a transmission-type light modulator positioned to receive the emergent light of the image assimilator. The image assimilator is configured for superimposing spatial information on the incident light beam and emitting one of a first polarized light component and a second polarized light component. The transmission-type light modulator alternates between a dark state and a bright state. The stereo projection optical systems provide viewers three-dimensional images formed by two alternative polarized lights whose polarizations are perpendicular relative to each other utilizing the transmission-type light modulators.
    Type: Grant
    Filed: December 7, 2007
    Date of Patent: November 15, 2011
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Chien-Wen Hsu, Chia-Hung Kao
  • Method for fabricating optical device
    Patent number: 8039286
    Abstract: A method for fabricating an optical device includes providing a semiconductor substrate having an element region and a peripheral region. The element region has an element array comprised of semiconductor elements formed therein. The peripheral region has at least a bonding pad electrically connected to the element array. A dielectric layer with an opening exposing the bonding pad is formed over the semiconductor substrate. A filter array and a planarizing layer are sequentially formed on the dielectric layer, and an organic layer is filled into the opening. An inorganic layer is formed on the planarizing layer and covers the organic layer. A portion of the inorganic layer and the organic layer are sequentially removed until the bonding pad is exposed. The organic layer protects the bonding pad from corrosion during the step removing the inorganic layer, and thus the fabrication yield is improved.
    Type: Grant
    Filed: August 19, 2009
    Date of Patent: October 18, 2011
    Assignee: United Microelectronics Corp.
    Inventor: Ching-Hung Kao
  • Water controlling valve
    Patent number: 8028356
    Abstract: A water controlling valve includes an outer sheet, an end cap and a control valve group. The control valve group is disposed between a flowing bore in the outer sheet and a water bore in the end cap. The water controlling valve is connected with the outlet of a water tube. When the control valve group is pushed upwards, the water bore in the end cap and the flowing bore in the outer sheet are closed in a predetermined sequence, then the water in the tube will not flow out. When the control valve group is pushed downwards, the flowing bore in the outer sheet and the water bore in the end cap are opened, then the water will flow out. When the water is stopped, the occurring positive or negative pressure wave is lowered, and then the vibration and the raspy noise will be avoided.
    Type: Grant
    Filed: March 16, 2006
    Date of Patent: October 4, 2011
    Assignee: Highplus International Co., Ltd
    Inventors: Yu-Yueh Kao, Chih-Hung Kao
  • Method and apparatus for inspecting radio frequency identification tags
    Patent number: 7973646
    Abstract: A method and an apparatus for inspecting radio frequency identification (RFID) tags which utilize a way of shielding for inspecting whether RFID tags function properly or not. The method of the present invention comprises steps of: reading a plurality of RFID tags in a readable zone; and determining whether there is any malfunctional RFID tag in the plurality of RFID tags. If all the plurality of RFID tags function properly, the method will check a next plurality of RFID tags. If there is at least one unreadable RFID tag, the at least one malfunctional RFID tag will be found by shielding one or the plurality of RFID tags. By means of the disclosure in the present invention, the present method and apparatus are capable of improving the efficiency during inspection and simplifying the design of a readable zone.
    Type: Grant
    Filed: November 23, 2007
    Date of Patent: July 5, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Hui-Ta Chen, Guo-Shing Huang, Ching-Chih Lin, Chun-Hao Chang, Chuan-Sheng Zhuang, Ming-Hsien Ko, Chih-Hung Kao
  • Magnesium alloy compound type thermal metal material
    Patent number: 7964291
    Abstract: A magnesium alloy compound type thermal metal material includes a heat dissipation surface layer formed of a magnesium alloy, a contact surface layer formed of gold, platinum, silver, or copper alloy, and a fusion layer, which is an eutectic structure joined between the heat dissipation surface layer and the contact surface layer under and formed therebetween subject to application of a high temperature and a high pressure, such that the thermal conductivity metal alloy of the contact surface layer absorbs heat energy quickly from the heat source and transfers absorbed heat energy to the heat dissipation surface layer for quick dissipation; the internal molecules of the product are joined tightly together subject to the applied pressure, and the surface of the product allows for electroplating.
    Type: Grant
    Filed: August 27, 2007
    Date of Patent: June 21, 2011
    Assignee: Jiing Tung Tec. Metal Co., Ltd.
    Inventors: Ying Hung Kao, Emily Hsiao
  • APPARATUS AND METHOD FOR MOVING OBJECT DETECTION
    Publication number: 20110142283
    Abstract: An apparatus and method for moving object detection computes a corresponding frame difference for every two successive image frames of a moving object, and segments a current image frame of the two successive image frames into a plurality of homogeneous regions. At least a candidate region is further detected from the plurality of homogeneous regions. The system gradually merges the computed frame differences via a morphing-based technology and interests with the at least a candidate region, thereby obtains the location and a complete outline of the moving object.
    Type: Application
    Filed: February 9, 2010
    Publication date: June 16, 2011
    Inventors: Chung-Hsien Huang, Cheng-Chuan Chou, Yi-Ta Wu, Chao-Hung Kao, Ming-Yu Shih
  • ABUSE-RESISTANT OPIOID DOSAGE FORM
    Publication number: 20110135731
    Abstract: We provide a pharmaceutical dosage form including an opioid antagonist surrounded by a controlled release matrix and an opioid agonist in a surrounding matrix.
    Type: Application
    Filed: February 24, 2011
    Publication date: June 9, 2011
    Applicant: Endo Pharmaceuticals, Inc.
    Inventors: Huai-Hung Kao, Yadi Zeng, Michelle Howard-Sparks, Fai Jim
  • FABRICATING METHOD OF COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) IMAGE SENSOR
    Publication number: 20110136292
    Abstract: A method of fabricating a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. First, an isolation structure is formed in a substrate with a photo-sensitive region and a transistor device region in the substrate. The transistor device region includes at least a region for forming a transfer transistor. A dielectric layer and a conductive layer are sequentially formed on the substrate. An ion implantation process is performed to implant a dopant into the substrate below the position for forming a gate of the transfer transistor and in the photo-sensitive region through the conductive layer and the dielectric layer. The conductive layer and the dielectric layer are patterned to at least form the gate structure of the transfer transistor on the transistor device region. Thereafter, a photo diode is formed in the substrate in the photo-sensitive region.
    Type: Application
    Filed: February 14, 2011
    Publication date: June 9, 2011
    Inventor: Ching-Hung Kao
  • Complementary metal-oxide-semiconductor (CMOS) image sensor and fabricating method thereof
    Patent number: 7939867
    Abstract: A method of fabricating a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. First, an isolation structure is formed in a substrate with a photo-sensitive region and a transistor device region in the substrate. The transistor device region includes at least a region for forming a transfer transistor. A dielectric layer and a conductive layer are sequentially formed on the substrate. An ion implantation process is performed to implant a dopant into the substrate below the position for forming a gate of the transfer transistor and in the photo-sensitive region through the conductive layer and the dielectric layer. The conductive layer and the dielectric layer are patterned to at least form the gate structure of the transfer transistor on the transistor device region. Thereafter, a photo diode is formed in the substrate in the photo-sensitive region.
    Type: Grant
    Filed: February 27, 2008
    Date of Patent: May 10, 2011
    Assignee: United Microelectronics Corp.
    Inventor: Ching-Hung Kao
  • Color filter structure having inorganic layers
    Patent number: 7924504
    Abstract: A color filter structure includes a substrate, in which a number of first pixel regions, a number of second pixel regions, and a number of third pixel regions are defined on the substrate. Each first pixel region includes a first stack layer; each second pixel region includes a second stack layer; and each third pixel region includes the first stack layer and the second stack layer.
    Type: Grant
    Filed: January 1, 2008
    Date of Patent: April 12, 2011
    Assignee: United Microelectronics Corp.
    Inventors: Chao-An Su, Tzung-I Su, Ching-Hung Kao
  • Thermal module
    Patent number: 7914902
    Abstract: A thermal module directly press-forged from magnesium alloy is disclosed having a peripheral wall, a recessed chamber surrounded by the peripheral wall. The body is made of magnesium alloy by means of softening magnesium alloy with heat and then press forging softened magnesium alloy into the desired shape.
    Type: Grant
    Filed: November 6, 2007
    Date of Patent: March 29, 2011
    Assignee: Jiing Tung Tec. Metal Co., Ltd.
    Inventors: Ying Hung Kao, Emily Hsiao
  • Method for Fabricating Optical Device
    Publication number: 20110045626
    Abstract: A method for fabricating an optical device includes providing a semiconductor substrate having an element region and a peripheral region. The element region has an element array comprised of semiconductor elements formed therein. The peripheral region has at least a bonding pad electrically connected to the element array. A dielectric layer with an opening exposing the bonding pad is formed over the semiconductor substrate. A filter array and a planarizing layer are sequentially formed on the dielectric layer, and an organic layer is filled into the opening. An inorganic layer is formed on the planarizing layer and covers the organic layer. A portion of the inorganic layer and the organic layer are sequentially removed until the bonding pad is exposed. The organic layer protects the bonding pad from corrosion during the step removing the inorganic layer, and thus the fabrication yield is improved.
    Type: Application
    Filed: August 19, 2009
    Publication date: February 24, 2011
    Inventor: Ching-Hung KAO
  • Stereo projection optical system
    Patent number: 7878656
    Abstract: A stereo projection optical system includes a first polarizing beam splitter, a transmission-type light modulator positioned to receive the first polarized light component from the first polarizing light splitter and an image assimilator positioned to receive an emergent light of the transmission-type light modulator. The image assimilator includes a second polarized light splitter and first, second reflective spatial light modulators. The stereo projection optical systems provide viewers three-dimensional images formed by two alternative polarization light beams whose polarizations are perpendicular to each other utilizing the transmission-type light modulators to form “3-D” images.
    Type: Grant
    Filed: December 7, 2007
    Date of Patent: February 1, 2011
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Chien-Wen Hsu, Chia-Hung Kao
  • Temperature adjusting apparatus for use in LCD projector and related method
    Patent number: 7878661
    Abstract: A projector includes a projecting lens configured for projecting an image, a controlling unit configured for analyzing a color temperature of the image, and an adjusting unit electrically connected to the controlling unit. The adjusting unit adjusts the color temperature of the image to be identical to a preset color temperature of the projector by changing transmittance of light through the adjusting unit.
    Type: Grant
    Filed: November 15, 2007
    Date of Patent: February 1, 2011
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Chien-Wen Hsu, Shih-Chieh Chou, Chia-Hung Kao, Huan-Liang Lo
  • ABUSE-RESISTANT OPIOID DOSAGE FORM
    Publication number: 20110020444
    Abstract: We provide a pharmaceutical dosage form including an opioid antagonist surrounded by a controlled release matrix and an opioid agonist in a surrounding matrix.
    Type: Application
    Filed: September 30, 2010
    Publication date: January 27, 2011
    Applicant: Endo Pharmaceuticals, Inc.
    Inventors: Huai-Hung Kao, Yadi Zeng, Michelle Howard-Sparks, Fai Jim
  • GATE STRUCTURE AND METHOD OF MAKING THE SAME
    Publication number: 20110012209
    Abstract: A method of making a gate structure includes the following steps. First, a gate is formed. Then, a first silicon oxide layer, a silicon nitride layer, and a second silicon oxide layer are formed to cover the gate from bottom to top. Later, a dry etching is performed to etch the second silicon oxide layer. After that, a wet etching is performed to etch the silicon nitride layer and the first silicon oxide layer. The aforesaid wet etching is performed by utilizing an RCA cleaning solution. Furthermore, the silicon nitride layer is formed by the SINGEN process. Therefore, the first and second silicon oxide layer and the silicon nitride layer can be etched together by the RCA cleaning solution.
    Type: Application
    Filed: July 14, 2009
    Publication date: January 20, 2011
    Inventors: Ching-Hung Kao, Chien-En Hsu
  • Metal-oxide-semiconductor transistor and method of manufacturing the same
    Patent number: 7868394
    Abstract: The trench MOS transistor according to the present invention includes a drain region in a form of a trench filled with a semiconductor material. The trench has a bottom surface and side surfaces and extends vertically downward from the top surface of the covering layer into the buried layer, the bottom surface of the trench lies in the buried layer, an insulating layer lines the side surfaces of the trenches, and the semiconductor material within the trench overlies the insulating layer and contacts the buried layer at the bottom surface of the trench.
    Type: Grant
    Filed: July 28, 2006
    Date of Patent: January 11, 2011
    Assignee: United Microelectronics Corp.
    Inventor: Ching-Hung Kao
  • CMOS image sensor
    Patent number: 7842984
    Abstract: A CMOS image sensor is described, based on a substrate and including a transfer transistor, a reset transistor, a source follower transistor, a select transistor, a photodiode and a floating node structure. The substrate includes a floating node area between the transfer transistor and the reset transistor. The floating node structure includes a P-well in the substrate within the floating node area, an N-well in the substrate outside of the floating node region, a lightly N-doped region having a portion in the P-well and another portion connected with the N-well, a heavily N-doped region in the N-well, and a contact plug for coupling the heavily N-doped region to the source follower transistor.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: November 30, 2010
    Assignee: United Microelectronics Corp.
    Inventor: Ching-Hung Kao
  • ESD protection device structure
    Patent number: 7842970
    Abstract: An electrostatic discharge (ESD) protective device structure is disclosed. The ESD protection device includes: at least a first conductive type metal-oxide semiconductor (MOS), in which the drain and source of the first conductive type MOS are electrically connected to a first power terminal and a second power terminal separately; at least a second conductive type diffusion region; and at least a dummy gate disposed between the first conductive type MOS and the second conductive type diffusion region, wherein the gate length of the dummy gate is less than the gate length of the first conductive type MOS gate, such that the junction between the second conductive type diffusion region and the drain of the first conductive type MOS have a low breakdown voltage.
    Type: Grant
    Filed: February 4, 2009
    Date of Patent: November 30, 2010
    Assignee: United Microelectronics Corp.
    Inventor: Ching-Hung Kao