Patents by Inventor Hung-Chang Chang

Hung-Chang Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210225283
    Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.
    Type: Application
    Filed: April 5, 2021
    Publication date: July 22, 2021
    Inventors: Chin-Wei Lin, Hung Sheng Lin, Shih Chang Chang, Shinya Ono
  • Patent number: 10957728
    Abstract: A semiconductor device includes a semiconductor substrate, a device layer over the semiconductor substrate, a first color filter in a top surface of the device layer and adjacent to an edge of the device layer, and a second color filter in the top surface of the device layer. The second color filter has substantially the same thickness and the same color as the first color filter.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: March 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Chang Chang, Chun-Yuan Hsu, Szu-Hung Yang
  • Patent number: 10367019
    Abstract: A semiconductor device includes a substrate, a device layer, color filters and a passivation layer. The device overlies the substrate, and has a first surface and a second surface opposite to the first surface. The device layer includes a grid structure disposed on the second surface of the device layer, and the grid structure includes cavities. The first surface of the device layer is adjacent to the substrate. The color filters fill in the cavities. The passivation layer is disposed on the second surface of the device layer, and covers the grid structure and the color filters.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: July 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Chang Chang, Chun-Yuan Hsu, Szu-Hung Yang
  • Publication number: 20190127036
    Abstract: A semiconductor device includes a semiconductor substrate, a device layer over the semiconductor substrate, a first color filter in a top surface of the device layer and adjacent to an edge of the device layer, and a second color filter in the top surface of the device layer. The second color filter has substantially the same thickness and the same color as the first color filter.
    Type: Application
    Filed: November 30, 2018
    Publication date: May 2, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Chang CHANG, Chun-Yuan HSU, Szu-Hung YANG
  • Patent number: 9901998
    Abstract: A bandsaw machine health monitoring system includes a sensing module, a signal processing module, a human-machine interface module and a control module. The sensing module may include a plurality of sensing devices and these sensing devices can collect a plurality of signals from a bandsaw machine in operation. The signal processing module can be electrically connected to the sensing module and the signal processing module can process the signals collected by the sensing module. The control module can analyze the processing result transmitted from the signal processing module. The human-machine interface module can receive the analysis result of the control module and display the health status value of the bandsaw machine.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: February 27, 2018
    Assignee: COSEN MECHATRONICS CO., LTD.
    Inventors: Mu-Shui Huang, Jay Lee, Ying-Fan Wu, Hung-Chang Chang, Hung-Lung Chung, Hsiang Huang, Peng-Yu Huang, Hung-An Kao, Shan Hu Yang, Wen Jing Jin, Chih-Chun Cheng, Ping-Chun Tsai
  • Patent number: 9779998
    Abstract: A method of manufacturing a semiconductor device is provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: October 3, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Chen Tsai, Hung-Chang Chang, Ta-Kang Lo, Tsai-Fu Chen, Shang-Jr Chen
  • Publication number: 20170221766
    Abstract: A method of manufacturing a semiconductor device is provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.
    Type: Application
    Filed: March 6, 2017
    Publication date: August 3, 2017
    Inventors: Chia-Chen Tsai, Hung-Chang Chang, Ta-Kang Lo, Tsai-Fu Chen, Shang-Jr Chen
  • Patent number: 9685520
    Abstract: A manufacturing method of a semiconductor device includes the following steps. A first gate dielectric layer is formed in a first gate trench and a second gate dielectric layer is formed in a second gate trench. A first bottom barrier layer is formed on the first gate dielectric layer and the second gate dielectric layer. A first conductivity type work function layer is formed on the first bottom barrier layer. A first treatment to the first gate dielectric layer and/or a second treatment to the first bottom barrier layer on the first gate dielectric layer are performed before the step of forming the first conductivity type work function layer. The first treatment and the second treatment are used to modify threshold voltages of specific transistors, and thicknesses of work function layers formed subsequently may be modified for increasing the related process window accordingly.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: June 20, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shuo-Lin Hsu, Hsin-Ta Hsieh, Chun-Chia Chen, Chen-Chien Li, Hung-Chang Chang, Ta-Kang Lo, Tsai-Fu Chen, Shang-Jr Chen
  • Patent number: 9634002
    Abstract: A semiconductor device and method of manufacturing the same are provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.
    Type: Grant
    Filed: February 29, 2016
    Date of Patent: April 25, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Chen Tsai, Hung-Chang Chang, Ta-Kang Lo, Tsai-Fu Chen, Shang-Jr Chen
  • Patent number: 9620550
    Abstract: Backside illuminated image sensor structures are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: April 11, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Chang Chang, Chun-Yuan Hsu, Chien-Chung Chen, Yung-Hsieh Lin
  • Publication number: 20160225810
    Abstract: A semiconductor device includes a substrate, a device layer, color filters and a passivation layer. The device overlies the substrate, and has a first surface and a second surface opposite to the first surface. The device layer includes a grid structure disposed on the second surface of the device layer, and the grid structure includes cavities. The first surface of the device layer is adjacent to the substrate. The color filters fill in the cavities. The passivation layer is disposed on the second surface of the device layer, and covers the grid structure and the color filters.
    Type: Application
    Filed: January 29, 2015
    Publication date: August 4, 2016
    Inventors: Hung-Chang CHANG, Chun-Yuan HSU, Szu-Hung YANG
  • Publication number: 20160064433
    Abstract: Backside illuminated image sensor structures are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.
    Type: Application
    Filed: November 9, 2015
    Publication date: March 3, 2016
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Chang CHANG, Chun-Yuan HSU, Chien-Chung CHEN, Yung-Hsieh LIN
  • Patent number: 9209339
    Abstract: Embodiments of mechanisms of a backside illuminated image sensor structure are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.
    Type: Grant
    Filed: December 6, 2013
    Date of Patent: December 8, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Chang Chang, Chun-Yuan Hsu, Chien-Chung Chen, Yung-Hsieh Lin
  • Publication number: 20150309061
    Abstract: A handsaw machine health monitoring system includes a sensing module, a signal processing module, a human-machine interface module and a control module. The sensing module may include a plurality of sensing devices and these sensing devices can collect a plurality of signals from a handsaw machine in operation. The signal processing module can be electrically connected to the sensing module and the signal processing module can process the signals collected by the sensing module. The control module can analyze the processing result transmitted from the signal processing module. The human-machine interface module can receive the analysis result of the control module and display the health status value of the handsaw machine.
    Type: Application
    Filed: April 28, 2015
    Publication date: October 29, 2015
    Inventors: Mu-Shui Huang, Jay Lee, Ying-Fan Wu, Hung-Chang Chang, Hung-Lung Chung, Hsiang Huang, Peng-Yu Huang, Hung-An Kao, Shan Hu Yang, Wen Jing Jin, Chih-Chun Cheng, Ping-Chun Tsai
  • Publication number: 20150162365
    Abstract: Embodiments of mechanisms of a backside illuminated image sensor structure are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.
    Type: Application
    Filed: December 6, 2013
    Publication date: June 11, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Hung-Chang CHANG, Chun-Yuan HSU, Chien-Chung CHEN, Yung-Hsieh LIN
  • Patent number: 8922500
    Abstract: A projective capacitive touch sensor includes a substrate, a plurality of electrode layers and a plurality of dielectric layers. The electrode layers are arranged on the substrate along a first direction. At least one dielectric layer is formed on each electrode layer and the dielectric layer has different widths along a second direction.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: December 30, 2014
    Assignee: Hannstar Display Corp.
    Inventors: Yi Chung Juan, Chao Hui Wu, Hung Chang Chang
  • Patent number: 8704800
    Abstract: A photo element includes a capacitor, a switch thin film transistor (TFT), a charge thin film transistor, and a photo thin film transistor. A voltage is charged to the capacitor through the charge TFT, and the output voltage of the capacitor is read through the readout line. The photo-induced current will affect the output voltage of the capacitor; therefore it is employed to determine whether the photo element is touched. Later, a reverse-biased voltage is applied to the photo TFT, such that the threshold voltage and sensitivity of the photo TFT can be maintained.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: April 22, 2014
    Assignee: Hannstar Display Corp.
    Inventors: Hung-Chang Chang, Yi-Chung Juan, Chao-Hui Wu
  • Patent number: 8274463
    Abstract: A transflective liquid crystal display (TR LCD) including a display panel, a first reference voltage line and a second reference voltage line is disclosed. The display panel includes: a plurality of scan lines; a plurality of data lines, disposed substantially perpendicularly to the scan lines; a plurality of pixels arranged in an array, respectively coupled to a corresponding data line and a corresponding scan line. Each pixel has a transparent area and a reflection area, and each row of pixels is divided by definition into a first pixel-group and a second pixel-group. The above-mentioned first reference voltage line and second reference voltage line are respectively coupled to the reflection areas of the pixels of the first pixel-group and the second pixel-group of each row of pixels for respectively receiving a first reference voltage signal and a second reference voltage signal, wherein both the reference voltage signals are time-varying or periodic.
    Type: Grant
    Filed: October 27, 2009
    Date of Patent: September 25, 2012
    Assignee: Hannstar Display Corporation
    Inventors: Hung-Chang Chang, Po-Sheng Shih, Sweehan J. H. Yang
  • Patent number: 8259084
    Abstract: An embedded type inductive input display device capable of increasing aperture ratios, that is realized through parallel-connecting at least two sensing devices of adjacent pixels separated by a gate line, and said sensing devices are connected to a switch transistor, such that said switch transistor is under control of said gate line, and sensor signals output by said sensing devices are transmitted to a read line for detecting touch-control events and positions. As such, the size of said sensing device utilized can be reduced, hereby effectively increasing aperture ratio of a panel, while maintaining a same magnitude of said sensor signals.
    Type: Grant
    Filed: July 21, 2009
    Date of Patent: September 4, 2012
    Assignee: HannStar Display Corporation
    Inventors: Hung-Chang Chang, Po-Yang Chen, Po-Sheng Shih
  • Publication number: 20110102366
    Abstract: A projective capacitive touch sensor includes a substrate, a plurality of electrode layers and a plurality of dielectric layers. The electrode layers are arranged on the substrate along a first direction. At least one dielectric layer is formed on each electrode layer and the dielectric layer has different widths along a second direction.
    Type: Application
    Filed: October 7, 2010
    Publication date: May 5, 2011
    Applicant: HANNSTAR DISPLAY CORP.
    Inventors: Yi Chung JUAN, Chao Hui WU, Hung Chang CHANG