Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

Abstract: A semiconductor device includes a semiconductor substrate, a device layer over the semiconductor substrate, a first color filter in a top surface of the device layer and adjacent to an edge of the device layer, and a second color filter in the top surface of the device layer. The second color filter has substantially the same thickness and the same color as the first color filter.

Abstract: A semiconductor device includes a substrate, a device layer, color filters and a passivation layer. The device overlies the substrate, and has a first surface and a second surface opposite to the first surface. The device layer includes a grid structure disposed on the second surface of the device layer, and the grid structure includes cavities. The first surface of the device layer is adjacent to the substrate. The color filters fill in the cavities. The passivation layer is disposed on the second surface of the device layer, and covers the grid structure and the color filters.

Abstract: A semiconductor device includes a semiconductor substrate, a device layer over the semiconductor substrate, a first color filter in a top surface of the device layer and adjacent to an edge of the device layer, and a second color filter in the top surface of the device layer. The second color filter has substantially the same thickness and the same color as the first color filter.

Abstract: A bandsaw machine health monitoring system includes a sensing module, a signal processing module, a human-machine interface module and a control module. The sensing module may include a plurality of sensing devices and these sensing devices can collect a plurality of signals from a bandsaw machine in operation. The signal processing module can be electrically connected to the sensing module and the signal processing module can process the signals collected by the sensing module. The control module can analyze the processing result transmitted from the signal processing module. The human-machine interface module can receive the analysis result of the control module and display the health status value of the bandsaw machine.

Abstract: A method of manufacturing a semiconductor device is provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.

Abstract: A method of manufacturing a semiconductor device is provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A first gate dielectric layer is formed in a first gate trench and a second gate dielectric layer is formed in a second gate trench. A first bottom barrier layer is formed on the first gate dielectric layer and the second gate dielectric layer. A first conductivity type work function layer is formed on the first bottom barrier layer. A first treatment to the first gate dielectric layer and/or a second treatment to the first bottom barrier layer on the first gate dielectric layer are performed before the step of forming the first conductivity type work function layer. The first treatment and the second treatment are used to modify threshold voltages of specific transistors, and thicknesses of work function layers formed subsequently may be modified for increasing the related process window accordingly.

Abstract: A semiconductor device and method of manufacturing the same are provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.

Abstract: Backside illuminated image sensor structures are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.

Abstract: A semiconductor device includes a substrate, a device layer, color filters and a passivation layer. The device overlies the substrate, and has a first surface and a second surface opposite to the first surface. The device layer includes a grid structure disposed on the second surface of the device layer, and the grid structure includes cavities. The first surface of the device layer is adjacent to the substrate. The color filters fill in the cavities. The passivation layer is disposed on the second surface of the device layer, and covers the grid structure and the color filters.

Abstract: Backside illuminated image sensor structures are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.

Abstract: Embodiments of mechanisms of a backside illuminated image sensor structure are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.

Abstract: A handsaw machine health monitoring system includes a sensing module, a signal processing module, a human-machine interface module and a control module. The sensing module may include a plurality of sensing devices and these sensing devices can collect a plurality of signals from a handsaw machine in operation. The signal processing module can be electrically connected to the sensing module and the signal processing module can process the signals collected by the sensing module. The control module can analyze the processing result transmitted from the signal processing module. The human-machine interface module can receive the analysis result of the control module and display the health status value of the handsaw machine.

Abstract: Embodiments of mechanisms of a backside illuminated image sensor structure are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.

Abstract: A projective capacitive touch sensor includes a substrate, a plurality of electrode layers and a plurality of dielectric layers. The electrode layers are arranged on the substrate along a first direction. At least one dielectric layer is formed on each electrode layer and the dielectric layer has different widths along a second direction.

Abstract: A photo element includes a capacitor, a switch thin film transistor (TFT), a charge thin film transistor, and a photo thin film transistor. A voltage is charged to the capacitor through the charge TFT, and the output voltage of the capacitor is read through the readout line. The photo-induced current will affect the output voltage of the capacitor; therefore it is employed to determine whether the photo element is touched. Later, a reverse-biased voltage is applied to the photo TFT, such that the threshold voltage and sensitivity of the photo TFT can be maintained.

Abstract: A transflective liquid crystal display (TR LCD) including a display panel, a first reference voltage line and a second reference voltage line is disclosed. The display panel includes: a plurality of scan lines; a plurality of data lines, disposed substantially perpendicularly to the scan lines; a plurality of pixels arranged in an array, respectively coupled to a corresponding data line and a corresponding scan line. Each pixel has a transparent area and a reflection area, and each row of pixels is divided by definition into a first pixel-group and a second pixel-group. The above-mentioned first reference voltage line and second reference voltage line are respectively coupled to the reflection areas of the pixels of the first pixel-group and the second pixel-group of each row of pixels for respectively receiving a first reference voltage signal and a second reference voltage signal, wherein both the reference voltage signals are time-varying or periodic.

Abstract: An embedded type inductive input display device capable of increasing aperture ratios, that is realized through parallel-connecting at least two sensing devices of adjacent pixels separated by a gate line, and said sensing devices are connected to a switch transistor, such that said switch transistor is under control of said gate line, and sensor signals output by said sensing devices are transmitted to a read line for detecting touch-control events and positions. As such, the size of said sensing device utilized can be reduced, hereby effectively increasing aperture ratio of a panel, while maintaining a same magnitude of said sensor signals.

Abstract: A projective capacitive touch sensor includes a substrate, a plurality of electrode layers and a plurality of dielectric layers. The electrode layers are arranged on the substrate along a first direction. At least one dielectric layer is formed on each electrode layer and the dielectric layer has different widths along a second direction.