Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Abstract: A trench isolation structure and method of making the same is provided. The trench isolation structure comprises a trench in a substrate, the trench having a bottom surface and sidewalls. A polycrystalline material is at least partially in the trench and an amorphous layer is over the polycrystalline material.

Abstract: Semiconductor structures including a deep trench isolation structure and methods of forming a semiconductor structure including a deep trench isolation structure. The semiconductor structure includes a semiconductor substrate having a device region, and a deep trench isolation structure in the semiconductor substrate. The deep trench isolation structure further includes a first portion, a second portion adjacent to the first portion, and a conductor layer in the first portion and the second portion. The conductor layer in the first portion of the deep trench isolation structure surrounds the device region. The conductor layer in the second portion of the deep trench isolation structure defines an electrical connection to the semiconductor substrate.

Abstract: A memory unit includes a substrate, at least one charge storage element, at least one first recessed access element, and an isolation portion. The substrate has a surface and the first recessed access element is disposed in an active area of the substrate and extending from the surface into the substrate. The first recessed access element is electrically connected to the charge storage element and induces in the substrate a first depletion region. The isolation portion is adjacent to the active area and extending from the surface into the substrate. The isolation portion includes a trenched isolating barrier and a second recessed access element. The second recessed access element is disposed in the trenched isolating barrier and induces in the substrate a second depletion region merging with the first depletion region.

Abstract: A semiconductor structure includes multiple buried gates which are disposed in a substrate and have a first source and a second source, an interlayer dielectric layer covering the multiple buried gates and the substrate as well as a core dual damascene plug including a first plug, a second plug and an insulating slot. The insulating slot is disposed between the first plug and the second plug so that the first plug and the second plug are mutually electrically insulated. The first plug and the second plug respectively penetrate the interlayer dielectric layer and are respectively electrically connected to the first source and the second source.

Abstract: A semiconductor electronic device structure includes an active area array disposed in a substrate, an isolation structure, a plurality of recessed gate structures, a plurality of word lines, and a plurality of bit lines. The active area array a plurality of active area columns and a plurality of active area rows, defining an array of active areas. The substrate has two recesses formed at the central region thereof. Each recessed gate structure is respectively disposed in the recess. A protruding structure is formed on the substrate in each recess. A STI structure of the isolation structure is arranged between each pair of adjacent active area rows. Word lines are disposed in the substrate, each electrically connecting the gate structures there-under. Bit lines are disposed above the active areas, forming a crossing pattern with the word lines.

Abstract: A memory unit includes a substrate, at least one charge storage element, at least one first recessed access element, and an isolation portion. The substrate has a surface and the first recessed access element is disposed in an active area of the substrate and extending from the surface into the substrate. The first recessed access element is electrically connected to the charge storage element and induces in the substrate a first depletion region. The isolation portion is adjacent to the active area and extending from the surface into the substrate. The isolation portion includes a trenched isolating barrier and a second recessed access element. The second recessed access element is disposed in the trenched isolating barrier and induces in the substrate a second depletion region merging with the first depletion region.

Abstract: A semiconductor electronic device structure includes an active area array disposed in a substrate, an isolation structure, a plurality of recessed gate structures, a plurality of word lines, and a plurality of bit lines. The active area array a plurality of active area columns and a plurality of active area rows, defining an array of active areas. The substrate has two recesses formed at the central region thereof. Each recessed gate structure is respectively disposed in the recess. A protruding structure is formed on the substrate in each recess. A STI structure of the isolation structure is arranged between each pair of adjacent active area rows. Word lines are disposed in the substrate, each electrically connecting the gate structures there-under. Bit lines are disposed above the active areas, forming a crossing pattern with the word lines.

Abstract: A semiconductor structure includes multiple buried gates which are disposed in a substrate and have a first source and a second source, an interlayer dielectric layer covering the multiple buried gates and the substrate as well as a core dual damascene plug including a first plug, a second plug and an insulating slot. The insulating slot is disposed between the first plug and the second plug so that the first plug and the second plug are mutually electrically insulated. The first plug and the second plug respectively penetrate the interlayer dielectric layer and are respectively electrically connected to the first source and the second source.

Abstract: A DRAM with dopant stop layer includes a substrate, a trench-type transistor and a capacitor electrically connected to the trench-type transistor. The trench-type transistor includes a gate structure embedded in the substrate. A source doping region and a drain doping region are disposed in the substrate at two sides of the gate structure. A boron doping region is disposed under the source doping region. A dopant stop layer is disposed within the boron doping region or below the boron doping region. The dopant stop layer includes a dopant selected from the group consisting of C, Si, Ge, Sn, Cl, F and Br.

Abstract: The present invention discloses a network connector and a connector main body of the network connector. The connector main body includes an insulating body and a terminal set installed in the insulating body. The insulating body includes a first accommodating cavity formed with a front opening and a bottom opening, a plug holding portion is integrally formed with a casing of an electronic device, a second accommodating cavity is formed in the plug holding portion, and the first accommodating cavity of the insulating body and the second accommodating cavity of the plug holding portion are vertically communicated to form a plug-connection port for a plug. By disposing the position of the plug holding portion on the casing, partial of the thickness of the bottom wall of the initial insulating body can be eliminated, so that the network connector can be minimized and more suitable for the thin electronic products.

Abstract: A DRAM with dopant stop layer includes a substrate, a trench-type transistor and a capacitor electrically connected to the trench-type transistor. The trench-type transistor includes a gate structure embedded in the substrate. A source doping region and a drain doping region are disposed in the substrate at two sides of the gate structure. A boron doping region is disposed under the source doping region. A dopant stop layer is disposed within the boron doping region or below the boron doping region. The dopant stop layer includes a dopant selected from the group consisting of C, Si, Ge, Sn, Cl, F and Br.

Abstract: A memory device is provided. The memory device includes a substrate, a trench having an upper portion and a lower portion formed in the substrate, a trench capacitor formed in the lower portion of the trench, a collar dielectric layer formed on a sidewall of the trench capacitor and extending away from a top surface of the substrate, a first doping region formed on a side of the upper portion of the trench in the substrate for serving as source/drain, a conductive layer formed in the trench and electrically connected to the first doping region, a top dielectric layer formed on conductive layer, a gate formed on the top dielectric layer, an epitaxy layer formed on both sides of the gate and on the substrate and a second doping area formed on a top of the epitaxy layer for serving as source/drain.

Abstract: A trench-type semiconductor device structure is disclosed. The structure includes a semiconductor substrate, a gate dielectric layer and a substrate channel structure. The semiconductor substrate includes a trench having an upper portion and a lower portion. The upper portion includes a conductive layer formed therein. The lower portion includes a trench capacitor formed therein. The gate dielectric layer is located between the semiconductor substrate and the conductive layer. The substrate channel structure with openings, adjacent to the trench, is electrically connected to the semiconductor substrate via the openings.

Abstract: An oxide spacer for stack DRAM gate stack is described, including: a semiconductor substrate with a memory array region and a periphery region, a plurality of gates disposed within the memory array region and the periphery region respectively, a silicon oxide spacer disposed on the gates, where the polysilicon contact plugs are formed by polysilicon deposition and chemical mechanical polish. After polysilicon contact plugs are formed, a silicon oxide layer is deposited to isolate the contacts and gate. The silicon oxide layer on top of contact plug is removed by chemical mechanical polish achieve planarization.

Abstract: A trench-type semiconductor device structure is disclosed. The structure includes a semiconductor substrate, a gate dielectric layer and a substrate channel structure. The semiconductor substrate includes a trench having an upper portion and a lower portion. The upper portion includes a conductive layer formed therein. The lower portion includes a trench capacitor formed therein. The gate dielectric layer is located between the semiconductor substrate and the conductive layer. The substrate channel structure with openings, adjacent to the trench, is electrically connected to the semiconductor substrate via the openings.

Abstract: A memory device is provided. The memory device includes a substrate, a trench having an upper portion and a lower portion formed in the substrate, a trench capacitor formed in the lower portion of the trench, a collar dielectric layer formed on a sidewall of the trench capacitor and extending away from a top surface of the substrate, a first doping region formed on a side of the upper portion of the trench in the substrate for serving as source/drain, a conductive layer formed in the trench and electrically connected to the first doping region, a top dielectric layer formed on conductive layer, a gate formed on the top dielectric layer, an epitaxy layer formed on both sides of the gate and on the substrate and a second doping area formed on a top of the epitaxy layer for serving as source/drain.

Abstract: The present invention pertains to a method of fabricating a trench capacitor having increased capacitance. To tackle a difficult problem of etching deeper trenches having very high aspect ratio, an epitaxial silicon growth process is employed in the fabrication of next-generation trench DRAM devices. A large-capacitance trench capacitor is first fabricated in the silicon substrate. An epitaxial silicon layer is then grown on the silicon substrate. Active areas, shallow trench isolation regions, and gate conductors are formed on/in the epitaxial silicon layer.

Abstract: The present invention pertains to a method of fabricating a trench capacitor having increased capacitance. To tackle a difficult problem of etching deeper trenches having very high aspect ratio, an epitaxial silicon growth process is employed in the fabrication of next-generation trench DRAM devices. A large-capacitance trench capacitor is first fabricated in the silicon substrate. An epitaxial silicon layer is then grown on the silicon substrate. Active areas, shallow trench isolation regions, and gate conductors are formed on/in the epitaxial silicon layer.

Abstract: A method of reducing trench aspect ratio. A trench is formed in a substrate. A conformal Si-rich oxide layer is formed on the surface of the trench by HDPCVD. A conformal first oxide layer is formed on the Si-rich oxide layer by HDPCVD. A conformal second oxide layer is formed on the first oxide layer by LPCVD. Part of the Si-rich oxide layer, the second oxide layer and the first oxide layer are removed by anisotropic etching to form an oxide spacer composed of a remaining Si-rich oxide layer, a remaining second oxide layer and a remaining first oxide layer. The remaining second oxide layer, part of the remaining first oxide layer and part of the Si-rich oxide layer are removed by BOE. Thus, parts of the remaining first and Si-rich oxide layers are formed on the lower surface of the trench, thereby reducing the trench aspect ratio.