Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.

Abstract: A liquid-cooled cooling structure includes a cooling main body having a condensation chamber and an evaporation chamber arranged vertically therein; a separation member arranged between and separating the condensation chamber and the evaporation chamber, and having a first through hole and a second through hole communicating with the condensation chamber and the evaporation chamber, a dimension of the first through hole being greater than that of the second through hole; a longitudinal partition board received in the condensation chamber and arranged between the first through hole and the second through hole and separating the condensation chamber into a first channel and a second channel; cooling fins extended from an outer perimeter of the cooling main body.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: An access point (AP) and a station (STA) communicate with each other, with the AP indicating to the STA either or both of a preamble detection (PD) channel and a signaling (SIG) content channel and with the STA being initially monitoring a primary frequency segment of a plurality of frequency segments in an operating bandwidth of the AP. A downlink (DL) or triggered uplink (UL) communication is performed between the AP and the STA during a transmission opportunity (TXOP) such that: (i) during the TXOP, the STA monitors a preamble on the PD channel and decodes a SIG content on the SIG content channel; and (ii) after an end of the TXOP, the STA switches to the primary frequency segment.

Abstract: A method of process technology assessment is provided. The method includes: defining a scope of the process technology assessment, the scope comprising an original process technology and a first process technology; modeling a first object in an integrated circuit into a resistance domain and a capacitance domain; generating a first resistance scaling factor and a first capacitance scaling factor based on the modeling, the original process technology, and the first process technology; and utilizing, by an electronic design automation (EDA) tool, the first resistance scaling factor and the first capacitance scaling factor for simulation of the integrated circuit.

Abstract: Systems, apparatuses, and methods for multi-application optical sensing are provided. For example, an optical sensing apparatus can include a photodetector array, a first circuitry, and a second circuitry. The photodetector array includes a plurality of photodetectors, wherein a first subset of the plurality of photodetectors are configured as a first region for detecting a first optical signal, and a second subset of the plurality of photodetectors are configured as a second region for detecting a second optical signal. The first circuitry, coupled to the first region, is configured to perform a first function based on the first optical signal to output a first output result. The second circuitry, coupled to the second region, is configured to perform a second function based on the second optical signal to output a second output result.

Abstract: Systems, apparatuses, and methods for multi-application optical sensing are provided. For example, an optical sensing apparatus can include a photodetector array, a first circuitry, and a second circuitry. The photodetector array includes a plurality of photodetectors, wherein a first subset of the plurality of photodetectors are configured as a first region for detecting a first optical signal, and a second subset of the plurality of photodetectors are configured as a second region for detecting a second optical signal. The first circuitry, coupled to the first region, is configured to perform a first function based on the first optical signal to output a first output result. The second circuitry, coupled to the second region, is configured to perform a second function based on the second optical signal to output a second output result.

Abstract: An acoustic resonance diagnostic method for detecting structural degradation is provided. The method includes steps as follows: Firstly, a training model is built using a deep neural network. At least two training acoustic signals are inputted to the training model to carry a training. A diagnostic model is built according to a result of the training using a CNN. A plurality of under-test sound wave signals are captured from an under-test section of an under-test structure. An AI is used to filter data invalid for detecting structural degradation from the under-test sound wave signals. A structural degradation state of the under-test section is determined according to a remaining portion of the under-test sound wave signals through the diagnostic model.

Abstract: Systems and methods for sensing objects are provided. An optical apparatus can include a transmitter configured to project on a surface of an object, a first optical pattern having a first set of characteristics and a second optical pattern having a second set of characteristics. The optical apparatus can include a receiver configured to receive first and second reflected optical patterns representing a reflection of the first optical pattern and the second optical pattern from the surface of the object, and generate first and second electrical signals representing the first and the second reflected optical patterns. The optical apparatus can include one or more processors configured to receive the first electrical signals and the second electrical signals, and determine one or more characteristics of the object, including range information of the object.

Abstract: The present disclosure provides an electronic system with defect identification function and a method of qualifying a photoresist pattern formed using a lithography process. The electronic system includes an inspection apparatus and a processor associated with the inspection apparatus. The inspection apparatus is used for acquiring at least one image of the specimen on which a photoresist pattern is formed using a lithography process. The processor is configured to automatically apply machine learning processes implemented through one or more neural networks to identify at least one defect present in the photoresist pattern.

Abstract: Systems, apparatuses, and methods for multi-application optical sensing are provided. For example, an optical sensing apparatus can include a photodetector array, a first circuitry, and a second circuitry. The photodetector array includes a plurality of photodetectors, wherein a first subset of the plurality of photodetectors are configured as a first region for detecting a first optical signal, and a second subset of the plurality of photodetectors are configured as a second region for detecting a second optical signal. The first circuitry, coupled to the first region, is configured to perform a first function based on the first optical signal to output a first output result. The second circuitry, coupled to the second region, is configured to perform a second function based on the second optical signal to output a second output result.

Abstract: An acoustic resonance diagnostic method for detecting structural degradation is provided. The method includes steps as follows: Firstly, a training model is built using a deep neural network. At least two training acoustic signals are inputted to the training model to carry a training. A diagnostic model is built according to a result of the training using a convolutional neural network. An under-test sound wave signal is captured from an under-test section of an under-test structure through direct contact, non-contact, or indirect contact. A structural degradation state of the under-test section is determined according to the under-test sound wave signal through the diagnostic model.

Abstract: Systems and methods improving three-dimensional sensor measurement accuracy are provided. For instance, an example apparatus can include a distance-estimation system, a distance-refinement system, and a processing system. The distance-estimation system can be configured to receive a first optical signal and determine a first distance between two points in an environment. The distance-refinement system can be configured to receive a second optical signal and determine a second distance between the two points in the environment. The processing system can be configured to receive information representing the first distance and the second distance and determine, based on the first distance and the second distance, a third distance between the two points in the environment. The difference between a true distance of the two points in the environment and the first distance can be larger than a difference between the true distance of the two points in the environment and the third distance.

Abstract: Systems and methods for sensing objects are provided. A sensing apparatus can include a sensor comprising a photo-detecting unit configured to absorb (i) a first incident light having a first wavelength to generate a first detecting signal and (ii) a second incident light having a second wavelength to generate a second detecting signal. The sensing apparatus can further include a calculation circuit coupled to the sensor. The calculation circuit can be configured to output a calculating result according to the first detecting signal and the second detecting signal. The sensing apparatus can further include an adjustment circuit coupled to the calculation circuit. The adjustment circuit can be configured to perform an adjustment to one or more functionalities associated with the sensing apparatus according to the calculating result.

Abstract: A device includes a semiconductor substrate, a buried oxide over the substrate, a first transition metal dichalcogenide layer over the buried oxide, an insulator over the first transition metal dichalcogenide layer, and a second transition metal dichalcogenide layer over the insulator. A gate dielectric is over the second transition metal dichalcogenide layer, and a gate is over the gate dielectric.

Abstract: An authentication system includes a storage device, an authentication server, a work server, and a user device. The authentication server communicates with the storage device. The work server communicates with the authentication server. The user device communicates with the authentication server and the work server. The user device logins in the authentication server and obtains an authentication token from the authentication server. The authentication server obtains an information from the storage device and transmits the information to the work server. The user device transmits the authentication token to the authentication server through the work server to perform authentication. The work server obtains an authentication result from the authentication server. When the authentication result is correct, the work server performs an operation request of the user device for the information.

Abstract: An object counting method having route distribution property is applied to an image processing device. The object counting method includes steps of recording an initial position datum and a final position datum of any object moving within an image frame, setting at least one detection line inside the image frame, determining whether a connection line between the initial position datum and the final position datum moves across the detection line, and drawing an object distribution diagram by relation between an amount of the object moving across the detection line and its detective period.

Abstract: The present disclosure provides an electrical connection cap of a stator. The electrical connection cap includes a housing and at least one connection sheet. The housing has a first opening and a second opening. The at least one connection sheet is embedded within the housing and has a first receiving part positioned in the first opening, and a second receiving part positioned in the second opening.

Abstract: A device includes a semiconductor substrate, a buried oxide over the substrate, a first transition metal dichalcogenide layer over the buried oxide, an insulator over the first transition metal dichalcogenide layer, and a second transition metal dichalcogenide layer over the insulator. A gate dielectric is over the second transition metal dichalcogenide layer, and a gate is over the gate dielectric.