Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate and forming a bottom layer, a middle layer, and a top layer on the substrate. The method also includes patterning the top layer to form a patterned top layer and patterning the middle layer by a patterning process including a plasma process to form a patterned middle layer. The plasma process is performed by using a mixed gas including hydrogen gas (H2). The method further includes controlling a flow rate of the hydrogen gas (H2) to improve an etching selectivity of the middle layer to the top layer, and the patterned middle layer includes a first portion and a second portion parallel to the first portion, and a pitch is between the first portion and the second portion.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate and forming a bottom layer, a middle layer, and a top layer on the substrate. The method also includes patterning the top layer to form a patterned top layer and patterning the middle layer by a patterning process including a plasma process to form a patterned middle layer. The plasma process is performed by using a mixed gas including hydrogen gas (H2). The method further includes controlling a flow rate of the hydrogen gas (H2) to improve an etching selectivity of the middle layer to the top layer, and the patterned middle layer includes a first portion and a second portion parallel to the first portion, and a pitch is between the first portion and the second portion.

Abstract: A method for forming an interconnect structure is provided. The method includes providing a substrate. The method also includes forming a dielectric layer on the substrate, and the dielectric layer includes an extreme low-k (ELK) dielectric layer. The method includes forming a via hole in the dielectric layer and forming a photoresist in the via hole and on the dielectric layer. The method also includes removing the photoresist by a plasma process using a CxHyOz gas and forming a conductive structure in the via hole.

Abstract: The present invention discloses a novel mixed micelle structure with a functional inner core and hydrophilic outer shells self-assembled from a graft macromolecule and one or more block copolymer, and preferably from a graft copolymer and two or more diblock copolymers. The micelle synthesized in the present invention has a size of about 50-200 nm, which can be used as a cancer diagnosis agent and a cancer drug delivery carrier.