Abstract: A carton with a detachable buffer plate set includes a bottom plate, two long side plates, an upper cover, two short side plates, two reinforcing side plates, and a detachable buffer plate set. The long side plates and the short side plates are connected to the bottom plate. The upper cover is connected to one of the long side plates. The two reinforcing side plates are connected to the two short side plates respectively. The detachable buffer plate set is detachably connected to one of the reinforcing side plates. Accordingly, by detaching the detachable buffer plate set for supporting and buffering, products of similar size or products with accessories of different sizes may use the same-sized cartons and paper-plastic boxes, so that extra die-cutting costs and storage costs are avoided.

Abstract: The disclosure provides a control method of a display driver. The control method includes receiving address information and defining an IC address according to the address information. The IC address includes n bits representing k zones, and n and k are positive integers. The control method further includes receiving the IC address, a black frame data signal and a pulse-width modulation (PWM) signal, and turning on or off the plurality of LEDs in the corresponding zone according to toggle of bit in the black frame data signal. Each bit in the black frame data signal indicates that a plurality of LEDs in a zone among the k zones are turned on or off.

Abstract: A method for controlling Schottky barrier height in a semiconductor device includes forming an alloy layer including at least a first element and a second element on a first surface of a semiconductor substrate. The semiconductor substrate is a first element-based semiconductor substrate, and the first element and the second element are Group IV elements. A first thermal anneal of the alloy layer and the first element-based substrate is performed. The first thermal anneal causes the second element in the alloy layer to migrate towards a surface of the alloy layer. A Schottky contact layer is formed on the alloy layer after the first thermal anneal.

Abstract: A semiconductor device package includes a substrate, an air cavity, a radiator, and a director. The substrate has a top surface. The air cavity is disposed within the substrate. The air cavity has a first sidewall and a second sidewall opposite to the first sidewall. The radiator is disposed adjacent to the first sidewall of the air cavity. The director is disposed adjacent to the second sidewall of the air cavity.

Abstract: A method for controlling Schottky barrier height in a semiconductor device includes forming an alloy layer including at least a first element and a second element on a first surface of a semiconductor substrate. The semiconductor substrate is a first element-based semiconductor substrate, and the first element and the second element are Group IV elements. A first thermal anneal of the alloy layer and the first element-based substrate is performed. The first thermal anneal causes the second element in the alloy layer to migrate towards a surface of the alloy layer. A Schottky contact layer is formed on the alloy layer after the first thermal anneal.

Abstract: A method for controlling Schottky barrier height in a semiconductor device includes forming an alloy layer including at least a first element and a second element on a first surface of a semiconductor substrate. The semiconductor substrate is a first element-based semiconductor substrate, and the first element and the second element are Group IV elements. A first thermal anneal of the alloy layer and the first element-based substrate is performed. The first thermal anneal causes the second element in the alloy layer to migrate towards a surface of the alloy layer. A Schottky contact layer is formed on the alloy layer after the first thermal anneal.

Abstract: A semiconductor device package includes a substrate, an air cavity, a radiator, and a director. The substrate has a top surface. The air cavity is disposed within the substrate. The air cavity has a first sidewall and a second sidewall opposite to the first sidewall. The radiator is disposed adjacent to the first sidewall of the air cavity. The director is disposed adjacent to the second sidewall of the air cavity.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first substrate having a first surface and a second surface opposite to the first surface, an antenna module disposed on the first surface of the first substrate, an electronic component module disposed on the first surface of the first substrate, and a first package body encapsulating the antenna module and the electronic component module. The antenna module has a first surface facing the first surface of the first substrate, a second surface opposite to the first surface of the antenna module, and a lateral surface extending between the first surface of the antenna module and the second surface of the antenna module. The lateral surface of the antenna module faces the electronic component module. A method of manufacturing a semiconductor device package is also provided.

Abstract: Devices comprising germanium nanosheets are described herein. Methods of forming such germanium nanosheets and devices including such germanium nanosheets are also described.

Abstract: The present disclosure relates to a semiconductor device package. The semiconductor device package includes an antenna layer having a feeding region and an insulating layer disposed on the antenna layer. The insulating layer has a first portion in contact with the antenna layer and a second portion on the first portion. The first portion and the second portion of the insulating layer define a stepped structure exposing the feeding region of the antenna layer. A method of manufacturing a semiconductor device package is also disclosed.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first substrate having a first surface and a second surface opposite to the first surface, an antenna module disposed on the first surface of the first substrate, an electronic component module disposed on the first surface of the first substrate, and a first package body encapsulating the antenna module and the electronic component module. The antenna module has a first surface facing the first surface of the first substrate, a second surface opposite to the first surface of the antenna module, and a lateral surface extending between the first surface of the antenna module and the second surface of the antenna module. The lateral surface of the antenna module faces the electronic component module. A method of manufacturing a semiconductor device package is also provided.

Abstract: The present disclosure relates to a semiconductor device package. The semiconductor device package includes an antenna layer having a feeding region and an insulating layer disposed on the antenna layer. The insulating layer has a first portion in contact with the antenna layer and a second portion on the first portion. The first portion and the second portion of the insulating layer define a stepped structure exposing the feeding region of the antenna layer. A method of manufacturing a semiconductor device package is also disclosed.

Abstract: Devices comprising germanium nanosheets are described herein. Methods of forming such germanium nanosheets and devices including such germanium nanosheets are also described.

Abstract: A method for controlling Schottky barrier height in a semiconductor device includes forming an alloy layer including at least a first element and a second element on a first surface of a semiconductor substrate. The semiconductor substrate is a first element-based semiconductor substrate, and the first element and the second element are Group IV elements. A first thermal anneal of the alloy layer and the first element-based substrate is performed. The first thermal anneal causes the second element in the alloy layer to migrate towards a surface of the alloy layer. A Schottky contact layer is formed on the alloy layer after the first thermal anneal.

Abstract: A method for controlling Schottky barrier height in a semiconductor device includes forming an alloy layer including at least a first element and a second element on a first surface of a semiconductor substrate. The semiconductor substrate is a first element-based semiconductor substrate, and the first element and the second element are Group IV elements. A first thermal anneal of the alloy layer and the first element-based substrate is performed. The first thermal anneal causes the second element in the alloy layer to migrate towards a surface of the alloy layer. A Schottky contact layer is formed on the alloy layer after the first thermal anneal.

Abstract: Devices comprising germanium nanosheets are described herein. Methods of forming such germanium nanosheets and devices including such germanium nanosheets are also described.

Abstract: Devices comprising germanium nanosheets are described herein. Methods of forming such germanium nanosheets and devices including such germanium nanosheets are also described.

Abstract: A method for controlling Schottky barrier height in a semiconductor device includes forming an alloy layer including at least a first element and a second element on a first surface of a semiconductor substrate. The semiconductor substrate is a first element-based semiconductor substrate, and the first element and the second element are Group IV elements. A first thermal anneal of the alloy layer and the first element-based substrate is performed. The first thermal anneal causes the second element in the alloy layer to migrate towards a surface of the alloy layer. A Schottky contact layer is formed on the alloy layer after the first thermal anneal.

Abstract: A network camera that connects a plurality of extensible imagers includes at least one imaging module and a camera body. The at least one imaging module includes a lens, an image sensor, an image digital signal processor with a video encoder and a USB connecting line. The camera body includes a plurality of USB ports for the USB signal line of the at least one imaging module to insert therein, a CPU and at least one signal output interface. The image sensor captures a digital image via the lens. The digital image is processed by the image digital signal processor and the video encoder and transmitted to the camera body via the USB connecting line. The digital image is further processed by computations of the CPU to form required signals outputted via the signal output interface.

Abstract: The present invention relates to a semiconductor device having a shielding layer. The semiconductor device includes a substrate, an inner metal layer, a shielding layer, an insulation material, a metal layer, a passivation layer and a redistribution layer. The inner metal layer is disposed in a through hole of the substrate. The shielding layer surrounds the inner annular metal. The insulation material is disposed between the inner metal layer and the shielding layer. The metal layer is disposed on a surface of the substrate, contacts the shielding layer and does not contact the inner metal layer. The redistribution layer is disposed in an opening of the passivation layer so as to contact the inner metal layer.