Abstract: This disclosure relates to a combined power module that includes a base structure, a terminal structure, a second terminal, and a cover. The terminal structure includes a mount assembly and a plurality of first terminals. The mount assembly is assembled on the base structure. The first terminals are disposed on the mount assembly. The second terminal is disposed on the base structure. The cover is disposed on the base structure and covers at least part of the first terminals and at least part of the second terminal.

Abstract: Smart rings and methods of manufacturing smart rings are provided. A waterproof design and method of manufacturing of a smart ring, in accordance with one implementation, includes a band having at least an outer surface and an inner surface. The inner surface of the band includes features configured to support electronic components. The waterproofing design and method of manufacturing includes a laser etching a portion of the inner surface and subsequent to the laser etching of the portion, applying an epoxy over the electronic components and over the laser etched portion of the inner surface. Prior to the laser etching, forming an edge rib on the portion of the inner surface, wherein the laser etching is subsequently on the edge rib. Furthermore, the laser etched portion includes an increased contact area for bonding with the epoxy for the waterproof design.

Abstract: An auxiliary operation device for a droplet dispenser includes a droplet sensor, an imaging device and a processor. The droplet sensor has a detected area located between a droplet dispenser and a target area, wherein the droplet sensor detects a droplet output from the droplet dispenser, and outputs a corresponding droplet detection signal. The imaging device captures an image of the target area. The processor obtains a dripping time point at which the droplet passes through the detected area according to the droplet detection signal, and determines whether the target area is shielded within a first time range according to the image, so as to evaluate whether the droplet has successfully dropped into the target area. The above-mentioned auxiliary operating device of the droplet dispenser can objectively determine whether the droplets successfully drops into the target area, and improve the accuracy of judgment.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion. The entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of a pad portion of the connection pad-and-via structure.

Abstract: An apparatus for forming a package structure is provided. The apparatus includes a processing chamber for bonding a first package component and a second package component. The apparatus also includes a bonding head disposed in the processing chamber. The bonding head includes a plurality of vacuum tubes communicating with a plurality of vacuum devices. The apparatus further includes a nozzle connected to the bonding head and configured to hold the second package component. The nozzle includes a plurality of first holes that overlap the vacuum tubes. The nozzle also includes a plurality of second holes offset from the first holes, wherein the second holes overlap at least two edges of the second package component. In addition, the apparatus includes a chuck table disposed in the processing chamber, and the chuck table is configured to hold and heat the first package component.

Abstract: A semiconductor substrate structure and a method of manufacturing a semiconductor substrate structure are provided. The semiconductor substrate structure includes a substrate, an electronic device, and a filling material. The substrate defines a cavity. The electronic device is disposed in the cavity and spaced apart from the substrate by a gap. The filling material is disposed in the gap and covers a first region of an upper surface of the electronic device.

Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.

Abstract: The present disclosure provides a connecting device and a lamp system. The connecting device is used to connect multiple lamps to form the lamp system. The connecting device includes a connecting element, a cover, and a shell. The cover is mounted on the connecting element and includes at least two first assembling members. The shell is detachably mounted on the cover. The shell includes a side wall, an opening, multiple gateways, and at least two second assembling members. The side wall surrounds a space. The opening and the gateways all are formed on a top of the side wall and communicate with the space. A portion of each of the lamps is received in one of the gateways. The second assembling members are disposed on the side wall and face each other in a radial line of the shell, and respectively engage with the first assembling members.

Abstract: A package includes a substrate having a conductive layer, and the conductive layer comprises an exposed portion. A die stack is disposed over the substrate and electrically connected to the conductive layer. A high thermal conductivity material is disposed over the substrate and contacting the exposed portion of the conductive layer. The package further includes a contour ring over and contacting the high thermal conductivity material.

Abstract: A keyswitch structure includes a baseplate, a keycap disposed over the baseplate and configured to be movable relative to the baseplate, a membrane switch disposed between the keycap and the baseplate and configured to have one or more buffer portions with two open edges opposite to each other, and a first linking bar connected to the keycap and disposed between the keycap and the membrane switch. The first linking bar has a first long side and a first short side connected to each other. When the keycap moves relative to the baseplate, the one or more buffer portions provide buffer to the first short side and/or an end section of the first long side.

Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.

Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.

Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: A modulation device including a plurality of electronic elements, at least one first signal line and a first driving circuit is provided. The at least one first signal line is respectively electrically connected to at least one of the electronic elements. The first driving circuit is electrically connected to the at least one first signal line. The first driving circuit provides a first signal to at least one of the at least one first signal line. The first signal includes a first pulse. The first pulse includes a first section and a second section closely adjacent to the first section.

Abstract: An electronic device including a bracket and an antenna is provided. The bracket includes first, second, third, and fourth surfaces. The antenna includes a radiator. The radiator includes first, second, third, and fourth portions. The first portion is located on the first surface and includes connected first and second sections. The second portion is located on the second surface and includes third, fourth, fifth, and sixth sections. The third section, the fourth section, and the fifth sections are bent and connected to form a U shape. The third portion is located on the third surface and is connected to the second section and the fourth section. The fourth portion is located on the fourth surface and is connected to the fifth section, the sixth section, and the third portion. The radiator is adapted to resonate at a low frequency band and a first high frequency band.

Abstract: A semiconductor device is disclosed herein. The semiconductor device includes a routing structure. The routing structure has an intermediate conductive routing layer. The intermediate conductive routing layer includes a first mesh conductive layer formed in a predetermined second region of the semiconductor device and a second mesh conductive layer formed in a predetermined first region of the semiconductor device. The first mesh conductive layer and the second mesh conductive layer are electrically isolated from each other. The intermediate conductive routing layer further includes multiple first conductive islands formed in the predetermined first region and multiple second conductive islands formed in the predetermined second region.

Abstract: An electronic device which is capable of being bent in a first direction and includes a plurality of light-emitting units and a plurality of conductive patterns overlapping with at least a portion of the plurality of light-emitting units and extending in a second direction. The first direction and the second direction have an angle ? of not greater than 30 degrees.

Abstract: A lens module includes a plurality of lenses, an annular body and a reflective element. The reflective element, the lenses and the annular are sequentially arranged along an optical axis from an object side to an image side. The lenses include a first lens that is disposed closest to the object side, and a second lens that is disposed closest to the image side. The reflective element is disposed between the object side and the first lens. The annular body is disposed between the object side and the first lens, between the lenses, or between the second lens and the image side. The lens module satisfies 0.5 mm<EPA/PL<5.5 mm where EPA is an area of an entrance pupil of the lens module, and PL is a length of the reflective element.