Abstract: A method of manufacturing double diffused drains in a semiconductor device. An embodiment comprises forming a gate dielectric layer on a substrate, and masking and patterning the gate dielectric layer. Once the gate dielectric layer has been patterned, a second dielectric layer, having a different depth than the gate dielectric layer, is deposited into the pattern. Once the dielectric layers have been placed into a step form, DDDs are formed by implanting ions through the two dielectric layers, whose different filtering properties form the DDDS. In another embodiment the implantations through the two dielectric layers are performed using different energies to form the different dose regions. In yet another embodiment the implantations are performed using different species (light and heavy), instead of different energies, to form the different dose regions.

Abstract: An electrostatic discharge protection device comprising a multi-finger gate, a first lightly doped region of a second conductivity, a first heavily doped region of the second conductivity, and a second lightly doped region of the second conductivity. The multi-finger gate comprises a plurality of fingers mutually connected in parallel over an active region of a first conductivity. The first lightly doped region of a second conductivity is disposed in the semiconductor substrate and between two of the fingers. The first heavily doped region of the second conductivity is disposed in the first lightly doped region of the second conductivity. The second lightly doped region of the second conductivity is beneath and adjoins the first lightly doped region of the second conductivity.

Abstract: A double-diffused-drain metal-oxide-semiconductor device has a gate structure overlying a semiconductor substrate, a pair of insulator spacers on the sidewalls of the gate structure respectively, and a pair of floating non-insulator spacers embedded in the pair of insulator spacers respectively.

Abstract: An organic light-emitting diode comprises an anode, an organic electroluminescent layer, a metal doped layer, and a cathode, in sequence, on a substrate; wherein the metal doped layer comprises an organic compound represented by the formula (1) doped with a metal.

Abstract: An organic electroluminescent material of the formula (1): wherein A and B are an electron donating group, R1 and R2 are an alkyl group.

Abstract: An organic light-emitting diode comprises an anode, an organic electroluminescent layer, a metal doped layer, and a cathode, in sequence, on a substrate; wherein the metal doped layer comprises an organic compound represented by the formula (1) doped with a metal.

Abstract: An organic light-emitting diode comprises an anode, an organic electroluminescent layer, a metal doped layer, and a cathode, in sequence, on a substrate; wherein the metal doped layer comprises an organic compound represented by the formula (1) doped with a metal.

Abstract: An organic light-emitting diode comprises an anode, an organic electroluminescent layer, a metal doped layer, and a cathode, in sequence, on a substrate; wherein the metal doped layer comprises an organic compound represented by the formula (1) doped with a metal.