Patents by Inventor Hung Lu
Hung Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9720601Abstract: A technique for load balancing uses heuristic-based algorithms with respect to input/output (I/O) latency of workloads destined to storage devices, e.g., solid state drives (SSDs), of a storage array attached to a storage system. Illustratively, “front-end” requests received from a host result in a back-end workload as those requests are processed by a storage I/O stack of the storage system and stored on the storage array. Accordingly, the technique maintains a consistent latency for the host requests (front-end) to control latency for the back-end workload. The load balancing technique illustratively load balances fixed (back-end) workloads having similar I/O sizes and I/O patterns. Illustratively, the technique balances the workloads across a plurality of storage ports over one or more I/O paths to the SSDs. Access to the SSDs may then be distributed among the storage ports.Type: GrantFiled: February 11, 2015Date of Patent: August 1, 2017Assignee: NetApp, Inc.Inventors: Anish Gupta, Samiullah Mohammed, Jamie Nguyen, Hung Lu
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Publication number: 20160231948Abstract: A technique for load balancing uses heuristic-based algorithms with respect to input/output (I/O) latency of workloads destined to storage devices, e.g., solid state drives (SSDs), of a storage array attached to a storage system. Illustratively, “front-end” requests received from a host result in a back-end workload as those requests are processed by a storage I/O stack of the storage system and stored on the storage array. Accordingly, the technique maintains a consistent latency for the host requests (front-end) to control latency for the back-end workload. The load balancing technique illustratively load balances fixed (back-end) workloads having similar I/O sizes and I/O patterns. Illustratively, the technique balances the workloads across a plurality of storage ports over one or more I/O paths to the SSDs. Access to the SSDs may then be distributed among the storage ports.Type: ApplicationFiled: February 11, 2015Publication date: August 11, 2016Inventors: Anish Gupta, Samiullah Mohammed, Jamie Nguyen, Hung Lu
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Patent number: 9329956Abstract: A method and system for reading exception data by a storage server from a storage controller. An exception event is detected at the storage server. The storage server registers with the controller, such that only one storage server can read the exception data at a time. If the storage server is registered with the controller, the storage server reads the exception data. If the storage server does not successfully register with the controller, the controller keeps track of which storage servers have not read the exception data, to ensure that all storage servers can read the data.Type: GrantFiled: July 3, 2014Date of Patent: May 3, 2016Assignee: NETAPP, INC.Inventors: Doug Coatney, Hung Lu
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Publication number: 20150161018Abstract: A method and system for reading exception data by a storage server from a storage controller. An exception event is detected at the storage server. The storage server registers with the controller, such that only one storage server can read the exception data at a time. If the storage server is registered with the controller, the storage server reads the exception data. If the storage server does not successfully register with the controller, the controller keeps track of which storage servers have not read the exception data, to ensure that all storage servers can read the data.Type: ApplicationFiled: July 3, 2014Publication date: June 11, 2015Inventors: Doug Coatney, Hung Lu
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Patent number: 8806509Abstract: A method and system for reading exception data by a storage server from a storage controller. An exception event is detected at the storage server. The storage server registers with the controller, such that only one storage server can read the exception data at a time. If the storage server is registered with the controller, the storage server reads the exception data. If the storage server does not successfully register with the controller, the controller keeps track of which storage servers have not read the exception data, to ensure that all storage servers can read the data.Type: GrantFiled: December 4, 2007Date of Patent: August 12, 2014Assignee: NetApp, Inc.Inventors: Doug Coatney, Hung Lu
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Publication number: 20090144755Abstract: A method and system for reading exception data by a storage server from a storage controller. An exception event is detected at the storage server. The storage server registers with the controller, such that only one storage server can read the exception data at a time. If the storage server is registered with the controller, the storage server reads the exception data. If the storage server does not successfully register with the controller, the controller keeps track of which storage servers have not read the exception data, to ensure that all storage servers can read the data.Type: ApplicationFiled: December 4, 2007Publication date: June 4, 2009Applicant: NETWORK APPLIANCE, INC.Inventors: Doug Coatney, Hung Lu
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Publication number: 20080099144Abstract: The present etching system includes a processing tank with an etching solution containing silicon, a cooling tank, a pre-heating tank, a first pipe for transferring the etching solution from the processing tank to the cooling tank, a second pipe for transferring the etching solution from the cooling tank to the pre-heating tank, and a third pipe for transferring the etching solution from the pre-heating tank to the processing tank. The present method for treating the etching solution first performs an etching process using the etching solution, which is then cooled to a first temperature to form a silicon-saturated etching solution. After silicon-containing particles larger than a predetermined size are filtered out, the silicon-saturated etching solution is heated to a second temperature to form a non-saturated etching solution for performing another etching process later. The second temperature is preferably at least 10° C. higher than the first temperature.Type: ApplicationFiled: December 21, 2007Publication date: May 1, 2008Applicant: PROMOS TECHNOLOGIES INC.Inventors: Hong Change, Hung Lu
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Publication number: 20080093343Abstract: The present etching system includes a processing tank with an etching solution containing silicon, a cooling tank, a pre-heating tank, a first pipe for transferring the etching solution from the processing tank to the cooling tank, a second pipe for transferring the etching solution from the cooling tank to the pre-heating tank, and a third pipe for transferring the etching solution from the pre-heating tank to the processing tank. The present method for treating the etching solution first performs an etching process using the etching solution, which is then cooled to a first temperature to form a silicon-saturated etching solution. After silicon-containing particles larger than a predetermined size are filtered out, the silicon-saturated etching solution is heated to a second temperature to form a non-saturated etching solution for performing another etching process later. The second temperature is preferably at least 10° C. higher than the first temperature.Type: ApplicationFiled: December 17, 2007Publication date: April 24, 2008Applicant: PROMOS TEHCNOLOGIES INC.Inventors: Hong Change, Hung Lu
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Publication number: 20070017903Abstract: The present etching system includes a processing tank with an etching solution containing silicon, a cooling tank, a pre-heating tank, a first pipe for transferring the etching solution from the processing tank to the cooling tank, a second pipe for transferring the etching solution from the cooling tank to the pre-heating tank, and a third pipe for transferring the etching solution from the pre-heating tank to the processing tank. The present method for treating the etching solution first performs an etching process using the etching solution, which is then cooled to a first temperature to form a silicon-saturated etching solution. After silicon-containing particles larger than a predetermined size are filtered out, the silicon-saturated etching solution is heated to a second temperature to form a non-saturated etching solution for repeating the etching process later. The second temperature is preferably at least 10° C. higher than the first temperature.Type: ApplicationFiled: September 25, 2006Publication date: January 25, 2007Applicant: PROMOS TECHNOLOGIES INC.Inventors: Hong Change, Hung Lu
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Publication number: 20060160366Abstract: The present invention discloses a method for preparing a structure with high aspect ratio, which can be a trench or a conductor. A first mask is formed on a substrate, and a first etching process is performed to remove the substrate uncovered by the first mask to form at least one concave. A second mask is formed on the surface of the prepared structure, a second etching process is then performed to remove the second mask on the concave, and a third etching process is performed subsequently to extend the depth of the concave into the substrate. To prepare a conductor with high aspect ratio in the substrate, the first mask and the second mask are preferably made of dielectric material or metal. In addition, to prepare a trench with high aspect ratio in a silicon substrate, the first mask and the second mask are preferably made of dielectric material.Type: ApplicationFiled: March 14, 2005Publication date: July 20, 2006Applicant: PROMOS TECHNOLOGIES INC.Inventors: Hung Lu, Hong Long Chang, Yung Kai Lee, Chih Hao Chang
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Publication number: 20050263488Abstract: The present etching system includes a processing tank with an etching solution containing silicon, a cooling tank, a pre-heating tank, a first pipe for transferring the etching solution from the processing tank to the cooling tank, a second pipe for transferring the etching solution from the cooling tank to the pre-heating tank, and a third pipe for transferring the etching solution from the pre-heating tank to the processing tank. The present method for treating the etching solution first performs an etching process using the etching solution, which is then cooled to a first temperature to form a silicon-saturated etching solution. After silicon-containing particles larger than a predetermined size are filtered out, the silicon-saturated etching solution is heated to a second temperature to form a non-saturated etching solution for performing another etching process later. The second temperature is preferably at least 10° C. higher than the first temperature.Type: ApplicationFiled: September 20, 2004Publication date: December 1, 2005Applicant: PROMOS TECHNOLOGIES INC.Inventors: Hong Change, Hung Lu
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Publication number: 20050027645Abstract: A method for evaluating the risk associated with an enterprise is presented. The method, based on a value-at-risk approach, uses a large number of scenarios to simulate the potential variation in the enterprise's future surplus capital based on its current assets and liabilities, and produces a probability distribution of future surplus capital. The scenarios are generated using quasi-Monte Carlo techniques in order to quickly achieve realistic scenarios. Each asset and each type of liability is modeled rigorously, and the effect of credit, interest rate, insurance, currency exchange, and equity risks on those assets and liabilities determined. The model also allocates surplus capital by division according to the risk associated with each division. The model is particularly well-suited for insurance companies.Type: ApplicationFiled: January 31, 2003Publication date: February 3, 2005Inventors: William, Wai, Shing Lui, Wai-Keung Tang, Hung Lu