Abstract: An unmanned vehicle processing system includes a controller, a laser source, a galvanometer module and a receiving device. The controller provides a laser trigger signal. The laser source is connected electrically to the controller, receives the laser trigger signal and further emits accordingly a laser beam. The galvanometer module includes a scanning galvanometer for reflecting and converting the laser beam into a processing beam. The receiving device is connected electrically to the controller, receives a processing reflected beam reflected from the object and further emits correspondingly a reflected reception signal to the controller. The controller obtains a processing distance between the unmanned vehicle and the object according to the reflected reception signal and the laser trigger signal, the reflected reception signal has a reflected-signal intensity, and the controller detects a processed state of the object according to the reflected-signal intensity.

Abstract: Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.

Abstract: This disclosure is related to an ultraviolet fluid sterilization device. A box includes a chamber, a water inlet and a water outlet. A window is defined on the bottom side of the chamber. A light-transmitting plate is combined to the window to seal the bottom side of the chamber. A lamp holder module includes a lamp holder and an ultraviolet LED set. The lamp holder is detachably combined to the box. The ultraviolet LED set is disposed corresponding to the window. An external fluid flows into the chamber from the water inlet. The light emitted from the ultraviolet LED set enters the chamber from the window to irradiate the external fluid, and then the external fluid flows to outside.

Abstract: A photonic integrated circuit (PIC) chip has an empty area and includes a grating coupler array, a photodetector array, an optical modulator module, a plurality of optical waveguides, and a plurality of bonding pads. The photodetector array is configured to transform a light signal from the grating coupler array into an electrical signal. The optical modulator module is configured to modulate a light beam from the grating coupler array such that light with a specific wavelength in the light beam is output from the grating coupler array. The optical modulator module and the photodetector array are coupled with the grating coupler array through the optical waveguides. The bonding pads are electrically connected to the optical modulator module and the photodetector array. The grating coupler array, the photodetector array, the optical modulator module, the optical waveguides, and the bonding pads are disposed around the empty area.

Abstract: The present disclosure describes a semiconductor structure that can provide improved gap fill. The semiconductor structure can include conductive features disposed on a first layer separated by a distance and a layer disposed over the conductive features and the first layer. The layer can include triangular-shaped peaks above each conductive feature in the conductive features and valley regions above the first layer.

Abstract: A control method of a light field display is provided. A control unit inputs a focal length signal to a zoom lens, so that the zoom lens is periodically switched among corresponding specific focal lengths. The control unit inputs a corresponding display signal to a display unit of a display module according to one of the specific focal lengths, and the display module generates one of image lights, the image lights respectively have different imaging distances corresponding to the specific focal lengths after passing through the zoom lens. The control unit inputs a corresponding response time signal to the display module according to one of the specific focal lengths, the one of image lights emitted by the display module passes through the zoom lens within one of response times, and the light field display projects the one of image lights to form an image at the corresponding imaging distance.

Abstract: A metal-insulator-metal (MIM) device includes a first metal, a first cap layer disposed on the first metal, an insulator layer disposed on the first cap layer, a second cap layer disposed on the insulator layer, and a second metal disposed on the second cap layer. The first and second cap layers each comprise a dielectric material having a tetragonal crystal phase. In some embodiments, the tetragonal phase percentage of the cap layers is at least 80%. In some embodiments, the insulator layer is a ferroelectric material, such as Hf1-xZrxO2 with an orthorhombic phase percentage of at least 70%. In some such embodiments, the cap layers are ZrO2 or Hf1-xZrxO2 with a higher Zr fraction than the insulator layer. In some embodiments, the cap layers are doped with a dopant that causes the tetragonal phase percentage of the cap layers to be at least 80%.

Abstract: A PFC power converter includes a power switch and an inductive device. A compensation signal is provided in response to an output voltage of the PFC power converter. An adapted compensation signal is provided in response to an ON time of the power switch and the compensation signal, to make the adapted compensation signal, the ON time, and the adapted compensation signal fit a predetermined correlation. The ON time of the power switch is determined in response to the adapted compensation signal. The PFC power converter is capable of achieving high PF when operating in discontinuous conduction mode.

Abstract: The present disclosure provides a method for manufacturing a semiconductor device having a mark. The method includes: providing a substrate including a device region and a peripheral region adjacent to the device region; forming an interconnect layer over the substrate; depositing a first dielectric layer on the interconnect layer; forming a redistribution layer (RDL) over the first dielectric layer in the device region; depositing a second dielectric layer on the RDL in the device region and the first dielectric layer in the device region and the peripheral region; and removing portions of the second dielectric layer, the first dielectric layer and the interconnect structure in the peripheral region to form the mark in the peripheral region.

Abstract: Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.

Abstract: A bushing well extender includes a body. The body includes a plug and a socket on two ends thereof and an extension portion extending from a peripheral side of the body. The extension portion has a chamber therein. A first electrically-conductive member is provided between the plug and the socket. A second electrically-conductive member is provided between the first electrically-conductive member and the chamber of the extension portion. When the bushing well extender is to be used, the operator selects a corresponding workpiece according to the function to be expanded and puts the workpiece into the chamber. Then, the body is connected in series with a high-voltage circuit, so that the high-voltage circuit has the function of the workpiece.

Abstract: A photonic integrated circuit (PIC) is adapted to an optical transmitter. The optical transmitter includes a printed circuit board (PCB), a photonic integrated circuit, and a set of PCB bond wires. The PCB includes a transmitter circuit with a set of signal output ports. The photonic integrated circuit includes a substrate, a micro ring modulator and a matching circuit. The substrate has a set of input pads. The micro ring modulator is located on the substrate and includes a set of electrical pads. The input pads are electrically connected to the electrical pads. The matching circuit is electrically connected to the electrical pads. The PCB bond wires are electrically connected to the signal output ports and the input pads. An impedance value of the matching circuit and the PCB bond wires substantially matches the modulation impedance value.

Abstract: In order to reduce the incidence of stress concentration areas in an etched opening, a thinner polyimide layer is deposited to minimize gap formation therein, and a descum process is then performed to increase the angle of the presented layer surface. Reduction of the stress in this manner reduces the incidence of cracking of the later formed metal contact, which improves the overall pass rates of semiconductor devices so manufactured.

Abstract: A mold assembly has a pressing mold, a shunt cone, and a mold cap. The shunt cone is disposed in the pressing mold to define a conical pressing channel. The shunt cone has a body, an inlet channel, and an outlet channel. The body has a conical cone portion. The inlet channel has an extension height from a top of shunt cone being higher than an extension height of the inlet channel from the top of the shunt cone. The mold cap is attached to a bottom of the pressing mold and has a lower mold cavity to allow the cone portion to extend into the lower mold cavity and to define a conical shaped connection channel. The connection channel communicates with the pressing channel, and a material input channel is defined in the mold cap and communicating with the connection channel.

Abstract: A topical subcutaneous microcirculation detection device includes a first light source module, a second light source module, a lens plate, a first light sensor, and a second light sensor. The first and second light source modules are configured to emit first and second illumination beams, respectively. A flat plate portion of the lens plate is disposed to lean against a first portion of skin of a subject. A convex surface of a first convex lens portion of the lens plate is disposed to push into a second portion of the skin of the subject. The first and second illumination beams are reflected into first and second reflected beams by the first and second portions of the skin, respectively. The first and second reflected beams are transmitted to the first and second light sensors, respectively.

Abstract: A method for operating a near-eye display device is provided, which includes: disposing the near-eye display device in front of an eye of a user; forming a display image through the near-eye display device; changing the display image to perform a short-distance vision examination on the eye; changing the display image to perform a long-distance vision examination on the eye; obtaining vision examination data of the user according to results of the short-distance vision examination and the long-distance vision examination, and storing the vision examination data; and according to the vision examination data, adjusting a system parameter of the near-eye display device.

Abstract: A HEMT device including a substrate structure, a channel layer, a barrier layer, a gate electrode, a drain electrode, a first source field plate, a second source field plate, and a dielectric structure is provided. The first source field plate extends from the second side of the gate electrode to the first side of the gate electrode. The second source field plate is located on the first side of the gate electrode and is located between the drain electrode and the first source field plate. There is a gap between the first source field plate and the second source field plate. The first source field plate has an end adjacent to the gap. The thickness of the dielectric structure located directly below the second source field plate is greater than the thickness of the dielectric structure located directly below the end of the first source field plate.

Abstract: A reference voltage generator circuit includes: a first transistor and a second transistor, wherein the first transistor and the second transistor are coupled with each other and are located on a substrate, wherein the first transistor has a first conduction threshold voltage and a first rated voltage, wherein the second transistor has a second conduction threshold voltage and a second rated voltage, wherein the first rated voltage is higher than the second rated voltage; wherein the reference voltage generator circuit is configured to generate a bandgap reference voltage with temperature compensation according to a difference between the first conduction threshold voltage and the second conduction threshold voltage.

Abstract: A method of switching operational modes of a power converter includes starting up a primary controller applied to the power converter to make the power converter operate in a normal mode; a secondary controller applied to the power converter detecting an output voltage of a secondary side of the power converter and the primary controller detecting an operational frequency of the power converter; if the operational frequency of the power converter is lower than a predetermined frequency and satisfies a first frequency condition, the primary controller controlling the power converter to enter a sleep mode; and when the power converter enters the sleep mode and the output voltage is lower than a trigger voltage, the secondary controller making the primary controller to control the power converter turned on.

Abstract: A light-emitting module (1) includes a light-emitting unit (10) and a rod lens (20). The light-emitting unit (10) outputs a light (11). The rod lens (20) is adjacent to the light-emitting unit (10), and converges the light (11) along an optical axis (100). A radial direction of the rod lens (20) is parallel to the optical axis (100). A distance between an axis (21) of the rod lens (20) and a light-emitting center (12) of the light-emitting unit (10) along the radial direction is greater than or equal to a focal length of the rod lens (20) along the radial direction.