Abstract: A method for fabricating a trench isolation structure is described. A trench is formed in a substrate. A liner layer is formed at least in the trench. A precursor layer is formed at least on the sidewalls of the trench. The precursor layer is converted to an insulating layer that has a larger volume than the precursor layer and fills up the trench.

Abstract: A memory device includes a plurality of isolations and trench fillers arranged in an alternating manner in a direction, a plurality of mesa structures between the isolations and trench fillers, and a plurality of word lines each overlying a side surface of the respective mesa. In one embodiment of the present invention, the width measured in the direction of the trench filler is smaller than that of the isolation, each mesa structure includes at least one paired source/drain regions and at least one channel base region corresponding to the paired source/drain regions, and each of the word lines is on a side surface of the mesa structure, adjacent the respective isolation, and is arranged adjacent the channel base region.

Abstract: A memory device includes a mesa structure and a word line. The mesa structure, having two opposite side surfaces, includes at least one pair of source/drain regions and at least one channel base region corresponding to the pair of source/drain regions formed therein. The word line includes two linear sections and at least one interconnecting portion. Each linear section extends on the respective side surface of the mesa structure, adjacent to the channel base region. The at least one interconnecting portion penetrates through the mesa structure, connecting the two linear sections.

Abstract: A method of forming a conductive contact includes forming a structure comprising an upper surface joining with a sidewall surface. The sidewall surface contains elemental-form silicon. Silicon is epitaxially grown from the sidewall surface. Dielectric material is formed over the upper surface and the epitaxially-grown silicon. A conductive contact is formed through the dielectric material to conductively connect with the upper surface.

Abstract: A method for forming a semiconductor device, includes the steps of providing a substrate; forming a patterned stack on the substrate including a first dielectric layer on the substrate, a first conductive layer on the first dielectric layer and a mask layer on the first conductive layer, wherein a width of the mask layer is smaller than a width of the first conductive layer; forming a second dielectric layer on the sidewall of the patterned stack; forming a third dielectric layer on the substrate; forming a second conductive layer over the substrate; and removing the mask layer and a portion of the first conductive layer covered by the mask layer to form an opening so as to partially expose the first conductive layer.

Abstract: A flash memory including a substrate having a recess, a buried bit line, a word line, a single side insulating layer, a floating gate, a tunneling dielectric layer, a control gate, and an inter-gate dielectric layer is provided. The buried bit line extends below the recess of the substrate along a first direction. The word line is on the substrate, and extends above the recess along a second direction. The single side insulating layer is on a first sidewall of the recess. The floating gate is on a second sidewall of the recess to be opposite to the single side insulating layer. The tunneling dielectric layer is sandwiched by the floating gate and the substrate to contact the buried bit line. The control gate fills the recess and contacts the word line. The inter-gate dielectric layer is sandwiched by the control gate and the floating gate.

Abstract: A dynamic random access memory (DRAM) structure has a stacked capacitor disposed above an upper source/drain region of a vertical transistor having a surrounding gate. The gates of each row of a memory array are electrically connected with a buried word line. Each of bit lines is disposed between two adjacent columns of transistors and electrically connected with lower source/drain regions through bit line contacts. The DRAM structure may have a unit cell size of 4F2.

Abstract: The present invention provides a dynamic network address translation system and method of transparent private network device. With the NAT approach, the first device in a public network can be connected to a second device in a private network. The first packet for the connection is sent from the first device in the public network to the second device in the private network. Before establishing the connection, the first device exchanges information between the NAPT router of the private network. The NAPT router maintains its translation table according to the information. Then, the first device sends a connection request to a specific port of the NAPT router, and the packet will be transformed and routed properly to the second device.

Abstract: The present invention discloses a method for forming a semiconductor device. The method includes providing a substrate; forming at least one first opening in the substrate to a predetermined depth and exposing a sidewall of the substrate in the first opening; forming a spacer on the sidewall and exposing a portion of the substrate in the bottom of the first opening; etching the exposed substrate in the bottom of the first opening by using the spacer as a mask to form a second opening; forming an isolation layer in the second opening and a portion of the first opening; forming a gate dielectric layer on the surface of the substrate; and forming a conductive layer covering the substrate.

Abstract: A method for forming a semiconductor device, includes the steps of providing a substrate; forming a patterned stack on the substrate including a first dielectric layer on the substrate, a first conductive layer on the first dielectric layer and a mask layer on the first conductive layer, wherein a width of the mask layer is smaller than a width of the first conductive layer; forming a second dielectric layer on the sidewall of the patterned stack; forming a third dielectric layer on the substrate; forming a second conductive layer over the substrate; and removing the mask layer and a portion of the first conductive layer covered by the mask layer to form an opening so as to partially expose the first conductive layer.

Abstract: A computer cursor control device is disclosed which can broadcast multimedia and control a computer cursor and comprises an interface unit; a mouse module connecting to the interface unit and controlling the computer cursor in a mouse mode; a multimedia module connecting to the interface unit and accessing a multimedia file in a multimedia mode for further broadcasting the multimedia file; and a button control unit connecting to the mouse module and the multimedia module respectively which enters a control signal for controlling the computer cursor or broadcasting the multimedia file.

Abstract: The present invention provides a dynamic network address translation system and method of transparent private network device. With the NAT approach, the first device in a public network can be connected to a second device in a private network. The first packet for the connection is sent from the first device in the public network to the second device in the private network. Before establishing the connection, the first device exchanges information between the NAPT router of the private network. The NAPT router maintains its translation table according to the information. Then, the first device sends a connection request to a specific port of the NAPT router, and the packet will be transformed and routed properly to the second device.

Abstract: A compensation system for a vehicle has a main reservoir, a vapor collector, an expansion tube, a working liquid supplying reservoir and an oil tank. The main reservoir is connected with the vapor collector via a heat absorbing pipe. The expansion tube is connected to the vapor collector. Two turbines are rotatably received in the expansion tube and are connected to a generator. The supplying reservoir is connected to the expansion tube. The oil tank encloses the expansion tube and absorbs the heat of the waste gas dissipated from the engine. Accordingly, the turbines will be actuated to rotate by means of expansion of volume of the working liquid sprayed into the expansion tube to actuate the generator to operate. The waste heat dissipated from the engine of the vehicle can be efficiently reused.

Abstract: A compensation system for a vehicle has a main reservoir, a vapor collector, an expansion tube, a working liquid supplying reservoir and an oil tank. The main reservoir is connected with the vapor collector via a heat absorbing pipe. The expansion tube is connected to the vapor collector. Two turbines are rotatably received in the expansion tube and are connected to a generator. The supplying reservoir is connected to the expansion tube. The oil tank encloses the expansion tube and absorbs the heat of the waste gas dissipated from the engine. Accordingly, the turbines will be actuated to rotate by means of expansion of volume of the working liquid sprayed into the expansion tube to actuate the generator to operate. The waste heat dissipated from the engine of the vehicle can be efficiently reused.