Patents by Inventor Hung-Sen Wang

Hung-Sen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Raising Programming Currents of Magnetic Tunnel Junctions Using Word Line Overdrive and High-k Metal Gate
    Publication number: 20100254181
    Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.
    Type: Application
    Filed: January 14, 2010
    Publication date: October 7, 2010
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shine Chung, Tao-Wen Chung, Chun-Jung Lin, Yu-Jen Wang, Hung-Sen Wang
  • Programming MRAM Cells Using Probability Write
    Publication number: 20100214825
    Abstract: A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell.
    Type: Application
    Filed: November 13, 2009
    Publication date: August 26, 2010
    Inventors: Shine Chung, Hung-Sen Wang, Tao-Wen Chung, Chun-Jung Lin, Yu-Jen Wang