Abstract: In a method of filling a trench in a substrate, a substrate is placed in a process zone, the substrate comprising a trench. A first deposition process is performed by providing a first gas into the process zone, maintaining first process conditions to deposit a first silicon oxide material in the trench in the substrate, and exhausting the first gas. Thereafter, a second deposition process is performed by providing a second gas into the process zone, maintaining second process conditions to deposit a second silicon oxide material to fill the trench and optionally overfill the trench, and exhausting the second gas. The multiple process deposition process allows the trench to be filled and overfilled with different types of silicon oxide materials to render the trench filling process more economical.

Abstract: A deposition method for filling recesses in a substrate is described. In the method, the substrate is exposed to an energized deposition gas comprising first and second components, to deposit a first layer of a material in the recess, and thereafter, the ratio of the first component to the second component is reduced, to deposit a second layer of the material over the first layer in the recess. The deposition method may be used to fill recesses in a substrate and smoothen out reentrant cavities in a silicon nitride liner, in the fabrication of polysilicon gates in a substrate.

Abstract: A pair of pliers has a driving handle, a fixed handle, a block plate, a U-shaped spring, a first torsion spring, and a second torsion spring. The driving handle couples with the fixed handle pivotally. The first torsion spring and the second torsion spring are connected to the driving handle and the fixed handle. The U-shaped spring is connected to the driving handle and the fixed handle.