Patents by Inventor Hung Tsai
Hung Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250249307Abstract: An exercise apparatus for leg exercises includes a frame, two first link rods, two second link rods, and two pedals. Each first link rod has a rotating portion and a first reciprocating portion respectively moving along a circular path and a first reciprocating path. Each second link rod has a second reciprocating portion moving along a second reciprocating path. Each first link rod has a first pivot portion connected to a second pivot portion of the corresponding second link rod. Each pedal is coupled to the corresponding second link rod, moving along an elongated closed path. The first reciprocating path, the second reciprocating path and the closed path are located below a lowermost position of the circular path, and height ranges of the first reciprocating path and the second reciprocating path at least partially overlap.Type: ApplicationFiled: January 9, 2025Publication date: August 7, 2025Applicant: Johnson Health Tech. Co., Ltd.Inventors: Meng-Hung Tsai, Joe Chen
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Patent number: 12381299Abstract: A power distribution component includes a wavelength converter, a connecting portion, a first power distribution portion and a second power distribution portion. The wavelength converter has an input end and a connection end. The connecting portion includes a first connecting end and a second connecting end, and the first connecting end is connected to the connection end. The first power distribution portion includes a first output port and a first end, and the first end is connected to the second connecting end. The second power distribution portion includes a second output port and a second end, and the second end is connected to the second connecting end. The first power distribution portion and the second power distribution portion are symmetrically disposed on opposite sides of the connecting portion by regarding the connecting portion as a mirror axis. Additionally, a wireless transceiver including a power distribution component is also provided.Type: GrantFiled: August 16, 2022Date of Patent: August 5, 2025Assignee: Merry Electronics Co., Ltd.Inventors: Tien-Fu Hung, Zong-Fu Li, Ming-Hung Tsai
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Publication number: 20250244853Abstract: A computer-implemented method including receiving, by a computing system, a first user input associated with a requested action, executing, by the computing system, a large language engine to generate a plurality of actions to be performed by at least a subset of the accessory devices based at least in part on the received user input, executing, by the computing system, an estimation engine to generate a certainty value associated with each action of the plurality of actions, presenting, by the computing system, a subset of actions of the plurality of actions to a user based at least in part on the certainty values of the plurality of actions, receiving, by the computing system, a second user input selecting an action of the subset of actions, and instructing, by the computing system, one or more accessory devices of the at least a subset of the accessory devices to perform the action.Type: ApplicationFiled: January 22, 2025Publication date: July 31, 2025Applicant: Apple Inc.Inventors: Yao-Hung Tsai, Jian Zhang
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Patent number: 12376360Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a silicide feature disposed in the backside dielectric layer, and a source/drain feature disposed over the silicide feature and extending between the first plurality of channel members and the second plurality of channel members. The silicide feature extends through an entire depth of the backside dielectric layer.Type: GrantFiled: December 2, 2022Date of Patent: July 29, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chen-Hung Tsai, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
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Publication number: 20250241011Abstract: A nanowire transistor includes a channel structure on a substrate, a gate structure on and around the channel structure, a source/drain structure adjacent to two sides of the gate structure, and a contact plug connected to the source/drain structure. Preferably, the source/drain structure includes graphene and the contact plug further includes a silicide layer on the source/drain structure, a graphene layer on the silicide layer, and a barrier layer on the graphene layer.Type: ApplicationFiled: April 8, 2025Publication date: July 24, 2025Applicant: UNITED MICROELECTRONICS CORP.Inventors: Po-Kuang Hsieh, Shih-Hung Tsai, Ching-Wen Hung, Chun-Hsien Lin
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Patent number: 12361692Abstract: A method for motion prediction includes receiving spatial information output by a radio-wave sensor, wherein the spatial information includes position and velocity of at least one point; receiving an image captured by a camera; tracking at least one object based on the spatial information and the image to obtain a consolidated tracking result; predicting a motion trajectory of the at least one object based on the consolidated tracking result to obtain a prediction result; and controlling the camera according to the prediction result.Type: GrantFiled: April 19, 2022Date of Patent: July 15, 2025Assignee: MEDIATEK INC.Inventors: Chih-Ming Hung, Chung-Hung Tsai, Shao-Hsiang Chang, Shih-Jung Chuang, Chun-Nan Li
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Patent number: 12363952Abstract: An active device substrate includes a substrate, a first thin film transistor located above the substrate and a second thin film transistor located above the substrate. The first thin film transistor includes a first metal oxide layer, a first gate, a first source and a first drain. A first gate dielectric layer and a second gate dielectric layer are located between the first gate and the first metal oxide layer. The second thin film transistor includes a second metal oxide layer, a second gate, a second source and a second drain. The second gate dielectric layer is located between the second gate and the second metal oxide layer, and the second metal oxide layer is located between the first gate dielectric layer and the second gate dielectric layer. The first gate and the second gate belong to a same patterned layer.Type: GrantFiled: August 3, 2022Date of Patent: July 15, 2025Assignee: AUP CorporationInventors: Chen-Shuo Huang, Shang-Lin Wu, Kuo-Kuang Chen, Chih-Hung Tsai
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Patent number: 12360458Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.Type: GrantFiled: June 30, 2022Date of Patent: July 15, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng Hung Tsai, Sheng-Kang Yu, Shang-Chieh Chien, Heng-Hsin Liu, Li-Jui Chen
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Publication number: 20250226894Abstract: A parameter adjustment method includes: inputting a testing signal into a radio frequency (RF) device to obtain an output signal generated by the RF device, using the output signal as a target signal to perform a determination procedure, wherein the determination procedure includes: determining whether a return loss of the target signal matches default specifications, inputting the target signal into a parameter adjustment model to obtain an adjustment scheme when the return loss does not match any one of the default specifications, wherein the adjustment scheme indicates an update electric parameter of the RF device, obtaining another output signal corresponding to the adjustment scheme from the RF device, using the another output signal as the target device to perform the determination procedure, and outputting a test result when the return loss matches the default specifications.Type: ApplicationFiled: March 27, 2024Publication date: July 10, 2025Inventors: Xujun ZHENG, Chao-Hung TSAI, Guowei GE, Xiaoyu ZHOU
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Patent number: 12353142Abstract: An extreme ultraviolet (EUV) source includes a collector associated with the vessel. The extreme ultraviolet (EUV) source includes a plurality of vanes along walls of the vessel. Each vane includes a stacked vane segment, and the stacked vane segments for each vane are stacked in a direction of drainage of tin (Sn) in the vessel. The EUV source includes a thermal control system comprising a plurality of independently controllable heating elements, where a heating element is configured to provide localized control for heating of a vane segment of the stacked vane segments.Type: GrantFiled: March 31, 2022Date of Patent: July 8, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng Hung Tsai, Sheng-Kang Yu, Shang-Chieh Chien, Heng-Hsin Liu, Li-Jui Chen
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Publication number: 20250220804Abstract: An optical transceiver includes a substrate, filtering capacitors, radio-frequency (RF) signal lines and ground vias. The substrate has two side edges and a distal edge, and has a main region and a golden finger region. The filtering capacitors are disposed in the main region on the substrate. The RF signal lines are connected to the filtering capacitors and each includes a first conductive portion disposed in the substrate and extending from the main region to the golden finger region, a second conductive portion disposed on the substrate and located in the golden finger region and a conductive via connecting the first conductive portion and the second conductive portion and extending no more than three layers of the substrate. The ground vias locate at the two side edges and the distal edge. A shortest distance between each RF signal line and the two side edges is larger than 0.95 mm.Type: ApplicationFiled: December 28, 2023Publication date: July 3, 2025Inventors: Chao-Hung TSAI, Che-Shou YEH, Ming-Chuan WANG
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Publication number: 20250216503Abstract: An ultra-wide angle radar system includes a first antenna module, a second antenna module, and a third antenna module. The first antenna module has a flexible board antenna or an integrated circuit board. One side of the second antenna module is adjacent to one side of the first antenna module and one side of the third antenna module is adjacent to another side of the first antenna module. The first, second, and third antenna modules have distinct radiating directions. One or both of the second antenna module and the third antenna module, connected to the first antenna module, transmit signals by coupling radiation or metallic connections. Therefore, the viewable angle during detection is greater than 180 degrees. The design can be adjusted according to requirements for different detection ranges in different applications such as long-range, medium-range, and short-range detection.Type: ApplicationFiled: January 30, 2024Publication date: July 3, 2025Inventors: KUO WEI LIN, CHUN YEN CHEN, MING HUNG TSAI
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Publication number: 20250192675Abstract: A single-inductor bipolar-output converter includes a power stage that generates a positive output voltage and a negative output voltage; a first error amplifier that generates a first error signal according to the positive output voltage; a second error amplifier that generates a second error signal according to the negative output voltage; a summation device that generates a sum signal by adding the first error signal and the second error signal; and a tunable gain control circuit coupled to receive the first error signal and configured to generate an amplified first error signal with a tunable gain.Type: ApplicationFiled: December 6, 2023Publication date: June 12, 2025Inventors: Meng-Xun Cai, Chien-Hung Tsai
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Patent number: 12327715Abstract: A magnetic shield reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition (PVD). The shield may have a thickness in a range from approximately 0.1 mm to approximately 10 mm to provide sufficient protection from radio frequency and other electromagnetic signals. As a result, copper atoms in the chamber undergo less re-direction from external noise. Additionally, even when hardware failure occurs during PVD (e.g., an electromagnet malfunctions, a wafer stage is not level, and/or a flow optimizer induces too much shift, among other examples), the copper atoms are less susceptible to small re-directions from external noise. As a result, back end of line (BEOL) and/or middle end of line (MEOL) conductive structures are formed in a more uniform manner, which increases conductivity and improves lifetime of an electronic device including the BEOL and/or MEOL conductive structures.Type: GrantFiled: February 16, 2022Date of Patent: June 10, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hung Tsai, Chin-Szu Lee, Szu-Hua Wu, Jui-Hung Ho, Chi-Hung Liao, Yu-Jen Chien
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Publication number: 20250175606Abstract: A video encoder is coupled to an external memory and configured to encode an input data to generate an output data. The input data includes a coding block. The video encoder includes a control circuit, a data loading circuit, a mode decision circuit, and an entropy coding circuit. The control circuit generates a start signal corresponding to the coding block. The data loading circuit reads the coding block from the external memory according to the start signal. The mode decision circuit processes the coding block according to the starting signal and generate an intermediate data. The entropy coding circuit generates the output data according to the intermediate data. In a video encoding mode, the control circuit further generates an indication signal indicating whether an image block of the coding block exists, and the mode decision circuit processes the image block according to the indication signal.Type: ApplicationFiled: November 1, 2024Publication date: May 29, 2025Inventors: WEI MIN ZENG, CHENG HUNG TSAI
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Patent number: 12314046Abstract: A device state evaluation method based on current signals is applied to a target device that is powered on, the device state evaluation method includes: collecting a plurality of target current signals corresponding to the target device via an acquisition module; performing a signature extraction operation and a normalization operation via a computing module to obtain a target matrix by using the plurality of target current signals; and performing a diagnosis operation on the target matrix via a diagnosis module to identify whether the target device is in a malfunction state, where an identification result of the diagnosis operation is used as target information. Therefore, whether the target device is in the malfunction state can be evaluated by analyzing the plurality of target current signals. A device state evaluation system is also provided.Type: GrantFiled: December 12, 2022Date of Patent: May 27, 2025Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Meng-Lin Li, Yu-Hung Pai, Hung-Tsai Wu, Chun-Chieh Wang
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Publication number: 20250155828Abstract: A system for monitoring and controlling an EUV light source includes a first temperature sensor, a signal processor, and a process controller. The first temperature sensor includes a portion inserted into a space surrounded by a plurality of vanes through a vane of the plurality of vanes, and obtains an ambient temperature that decreases with time as a function of tin contamination coating on the inserted portion. The signal processor determines an excess tin debris deposition on the vane based on the obtained chamber ambient temperature. The process controller activates a vane cleaning action upon being informed of the excess tin debris deposition by the signal processor, thereby improving availability of the EUV light source tool and reducing risks of tin pollution on other tools such as a reticle.Type: ApplicationFiled: January 16, 2025Publication date: May 15, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng Hung TSAI, Sheng-Kang YU, Heng-Hsin LIU, Li-Jui CHEN, Shang-Chieh CHIEN
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Publication number: 20250155804Abstract: A photoresist composition comprises a solvent and a polymer. The polymer is dissolved in the solvent. The photoresist composition further comprises a first additive. The first additive is dissolved in the solvent. The first additive is made of a core structure and one or more radical-active functional groups connected to the core structure.Type: ApplicationFiled: November 14, 2023Publication date: May 15, 2025Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Min-Hung TSAI, Siao-Shan WANG, Chen-Yu LIU, Ching-Yu CHANG
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Publication number: 20250154273Abstract: Provided are monospecific and bispecific proteins that bind specifically to PD-L1. Exemplary proteins release the inhibition through PD-L1. Exemplary polyvalent proteins comprise at least one PD-L1 binding site. In certain embodiments, the binding sites may be linked through an immunoglobulin constant region. Anti-PD-L1 antibodies are also provided. A pharmaceutical composition includes the antibody or the antigen-binding portion thereof as above mentioned and at least one pharmaceutically acceptable carrier.Type: ApplicationFiled: January 15, 2025Publication date: May 15, 2025Inventors: Jhong-Jhe YOU, Ching-Hsuan HSU, Po-Lin HUANG, Hung-Tsai KAN, Ting-Yi CHANG, Hsin-Ta HSIEH, Jeng-Horng HER
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Patent number: 12302608Abstract: A nanowire transistor includes a channel structure on a substrate, a gate structure on and around the channel structure, a source/drain structure adjacent to two sides of the gate structure, and a contact plug connected to the source/drain structure. Preferably, the source/drain structure includes graphene and the contact plug further includes a silicide layer on the source/drain structure, a graphene layer on the silicide layer, and a barrier layer on the graphene layer.Type: GrantFiled: May 31, 2024Date of Patent: May 13, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Po-Kuang Hsieh, Shih-Hung Tsai, Ching-Wen Hung, Chun-Hsien Lin