Abstract: A method for SCell BFR performed by a UE is provided. The method includes: receiving a first SCell BFR configuration corresponding to a first SCell, the first SCell BFR configuration including at least one of a resource list for BFD and a resource list for NBI; detecting a beam failure condition in the first SCell by measuring at least one BFD reference signal; determining a first new candidate beam index for the first SCell based on the first SCell BFR configuration; and transmitting a beam failure recovery request that includes a cell index of the first SCell in which beam failure occurs and the determined first new candidate beam index.

Abstract: A touch display device includes a substrate, a display element layer, a composite substrate, a touch electrode and an adhesive layer. The display element layer is disposed on the substrate. The composite substrate includes a support layer and a moisture barrier layer. The moisture barrier layer is in direct contact with and covers a surface of the support layer. The display element layer is located between the substrate and the composite substrate. A moisture transmission rate of the moisture barrier layer is less than 1×10?2 g/m2/day. The touch electrode is disposed on the composite substrate. The adhesive layer is disposed between the display element layer and the composite substrate.

Abstract: The invention provides a touch display device and an operation method for the touch display device. The touch display device includes an integrated control circuit and a touch driver. The integrated control circuit is coupled to the touch driver. The integrated control circuit outputs a first synchronization signal to the touch driver. The touch driver outputs a touch mode signal to the integrated control circuit, so that the integrated control circuit generates a synchronization enabling signal to the touch driver according to the touch mode signal.

Abstract: A method by a user equipment (UE) for Message A (MsgA) transmission in a two-step Random Access (RA) procedure is provided. The method includes receiving, from a base station (BS), a Physical Random Access Channel (PRACH) configuration including sets of PRACH preambles, each set of PRACH preambles being associated with a feature or feature combination; receiving, from the BS, a first MsgA Physical Uplink Shared Channel (PUSCH) configuration associated with the PRACH configuration; receiving, from the BS, a second MsgAPUSCH configuration associated with a specific set of PRACH preambles; determining a first PRACH preamble associated with a specific feature or feature combination from the sets of PRACH preambles; determining a MsgA PUSCH corresponding to the first PRACH preamble depending on whether the first PRACH preamble is within the specific set of PRACH preambles; and transmitting, to the BS, the first PRACH preamble and the MsgA PUSCH.

Abstract: Disclosed herein are methods for fabricating IC structures that include stacked vias providing electrical connectivity between metal lines of different layers of a metallization stack, as well as resulting IC structures. An example IC structure includes a first and a second metallization layers, including, respectively, a bottom metal line and a top metal line. The IC structure further includes a via that has a bottom via portion and a top via portion, where the top via portion is stacked over the bottom via portion (hence, the via may be referred to as a “stacked via”). The bottom via portion is coupled and self-aligned to the bottom electrically conductive line, while the top via portion is coupled and self-aligned to the top electrically conductive line. The bottom via portion is formed using selective growth, e.g., assisted by a self-assembled monolayer (SAM) material.

Abstract: A fastening device can fix a first plate on a second plate, the first plate is defined a positioning hole. The fastening device includes a fixing member, a pressing member, a guiding member, and an elastic member. The guiding member is partially disposed in a receiving cavity of the fixing member and protruding from the fixing member to connect to the pressing member. The guiding member can extend through the positioning hole to cause the second plate to be disposed between the fixing member and the pressing member. The elastic member is disposed in the receiving cavity and resisting against the receiving cavity and the guiding member. The elastic member can drive the guiding member and the pressing member toward the first plate when the second plate moves between the pressing member and the fixing member. The present disclosure further provides a fixing assembly including the fastening device.

Abstract: A method for a User Equipment (UE) for performing uplink transmissions for Random Access (RA) is provided. The method receives, from a base station, at least one configuration indicating a first threshold and initiates an RA procedure. The method determines whether to perform Multiple Physical Random Access Channel (PRACH) (MP) transmissions based on, at least, a comparison between a measurement result and the first threshold. The method then selects a PRACH resource configured for the MP transmissions in response to determining that the MP transmissions are to be performed. Performing the MP transmissions includes transmitting, repeatedly, an RA preamble, on the PRACH resource configured for the MP transmissions, before the UE begins monitoring a Physical Downlink Control Channel (PDCCH) for receiving a Random Access Response (RAR) that corresponds to the RA preamble.

Abstract: A backlight module has a back plate having a supporting surface, a reflective sheet, a light board, and at least one connecting structure. The reflective sheet is arranged on the supporting surface of the back plate along an assembling direction. The light board is disposed between the reflective sheet and the back plate. The at least one connecting structure has a recess and a post. The recess has an opening and a guiding surface connected to the opening and inclined along a guiding direction relative to the supporting surface. The post has an end portion configured to pass through the opening of the recess and hook the guiding surface. The back plate and the reflective sheet are mounted via the recess and the post. A display device is also provided.

Abstract: A magnetic component is adapted to be used in a power inductor. The magnetic component includes a magnetic body containing amorphous magnetic powders and/or nano-crystalline magnetic powders and at least one silicon-free glass material distributed among the amorphous magnetic powders and/or nano-crystalline magnetic powders; a coil embedded in the magnetic body; and a pair of electrodes electrically connected to two terminals of the coil, respectively.

Abstract: A method for MBS acquisition is provided. The method includes receiving system information from a BS; determining a first CORESET configuration and a second CORESET configuration according to the system information, the first CORESET configuration determining a first set of CORESETs scheduling at least one MCCH, the second CORESET configuration determining a second set of CORESETs scheduling a plurality of MTCHs; receiving an MCCH message on the at least one MCCH provided through a first beam of a plurality of beams associated with the BS; and determining, according to the second CORESET configuration and the MCCH message, a plurality of MBS-specific CORESET groups in the second set of CORESETs, wherein each of the plurality of MBS-specific CORESET groups corresponds to a respective MBS session and includes at least two CORESETs configured to be provided through at least two different beams of the plurality of beams. A UE using the method is also provided.

Abstract: Methods, systems, and devices for on-die formation of single-crystal semiconductor structures are described. In some examples, a layer of semiconductor material may be deposited above one or more decks of memory cells and divided into a set of patches. A respective crystalline arrangement of each patch may be formed based on nearly or partially melting the semiconductor material, such that nucleation sites remain in the semiconductor material, from which respective crystalline arrangements may grow. Channel portions of transistors may be formed at least in part by doping regions of the crystalline arrangements of the semiconductor material. Accordingly, operation of the memory cells may be supported by lower circuitry (e.g., formed at least in part by doped portions of a crystalline semiconductor substrate), and upper circuitry (e.g., formed at least in part by doped portions of a semiconductor deposited over the memory cells and formed with a crystalline arrangement in-situ).

Abstract: Field effect transistors and method of making. The field effect transistor includes a pair of active regions over a channel layer, a channel region formed in the channel layer and located between the pair of active regions, and a pair of contact via structures electrically connected to the pair of active regions. The contact via structure is formed in an interlayer dielectric layer that extends over the channel layer.

Abstract: A transistor comprises a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region. The channel region is crystalline and comprises a plurality of vertically-elongated crystal grains that individually are directly against both of the top source/drain region and the bottom source/drain region. Other embodiments, including methods, are disclosed.

Abstract: A method performed by a user equipment (UE) for transmission (Tx) chain switching between multiple bands is provided. The method receives, from a base station (BS), a first radio resource control (RRC) configuration for uplink (UL) Tx chain switching. The method performs a first UL transmission using a first Tx chain on a first band and a second Tx chain on a second band. The method receives downlink control information (DCI) scheduling a second UL transmission on a third band. The method then performs first UL Tx chain switching based on the first RRC configuration and the second UL transmission. The second UL transmission is a 1-port transmission. The first UL Tx chain switching includes switching the first Tx chain to be on the third band and maintaining the second Tx chain on the second band.

Abstract: A speed reducer comprises a transmission shaft, an eccentric wheel, a first wheel assembly, a rotating wheel and a second wheel assembly. The first wheel assembly comprises a first wheel disc and at least one first roller. The at least one first roller is disposed on the inner wall of first wheel disc. The rotating wheel comprises a main body comprising an outer ring structure and a concave structure. The outer ring structure comprises at least one first tooth. The at least one first tooth is in contact with the corresponding first roller. At least one second roller is disposed within the concave structure. The second wheel assembly comprises a second wheel disc and at least one second tooth. The at least one second tooth is disposed on an outer periphery of the second wheel assembly. The at least one second tooth is in contact with the corresponding second roller.

Abstract: A thin film transistor includes an insulating matrix layer including an opening therein, a hydrogen-blocking dielectric barrier layer continuously extending over a bottom surface and sidewalls of the opening and over a top surface of the insulating matrix layer, a gate electrode located within the opening, a stack of a gate dielectric and a semiconducting metal oxide plate overlying the gate electrode and horizontally-extending portions of the hydrogen-blocking dielectric barrier layer that overlie the insulating matrix layer, and a source electrode and a drain electrode contacting a respective portion of a top surface of the semiconducting metal oxide plate.

Abstract: A composite antenna and an electronic device are proposed. The electronic device includes the composite antenna, and the composite antenna includes a substrate, a first antenna structure, two contact springs, an antenna holder and a second antenna structure. The first antenna structure is disposed on the substrate, and two ends of the first antenna structure are coupled to a feeding point and a grounding point, respectively. The two contact springs are disposed on the first antenna structure, and electrically connected to the feeding point and the grounding point, respectively. The antenna holder is removably disposed on the substrate. The second antenna structure is disposed on the antenna holder and electrically connected to the two contact springs.

Abstract: An example computing device includes a flexible display coupled to a housing that includes a support plate having a first joint coupled to a first end of the support plate and a second joint coupled to a second end of the support plate. A slide module has a slot that guides a slide movement of the second joint along a path of movement within the slot as the support plate pivots about the first joint, where the support plate moves according to the first joint and the second joint to support at least the portion of the flexible display when the flexible display is unfolded and moves according to the first joint and the second joint to create a gap between at least a portion of the support plate and at least the portion of the flexible display when the flexible display is folded.

Abstract: Disclosed herein are transistor arrangements with trench contacts that have two parts—a first trench contact and a second trench contact—stacked over one another. Such transistor arrangements may be fabricated by forming a first trench contact over a source or drain contact of a transistor, recessing the first trench contact, forming the second trench contact over the first trench contact, and, finally, forming a gate contact that is electrically isolated from, while being self-aligned to, the second trench contact. Such a fabrication process may provide improvements in terms of increased edge placement error margin, cost-efficiency, and device performance, compared to conventional approaches to forming trench and gate contacts. The conductive material of the first trench contact may also be deposited over the gate electrodes of transistors, forming a gate strap, to advantageously reduce gate resistance.