Patents by Inventor Hung-Wen Huang
Hung-Wen Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180150585Abstract: A layout-generation method for an IC is provided. The layout-generation method includes accessing data of a schematic design of the IC; generating a hypergraph from the schematic design; transforming a plurality of constraints into a plurality of weighted edges in the hypergraph; continuing partitioning the hypergraph by the weighted edges until a plurality of multilevel groups are obtained to generate a layout; and verifying the layout to fabricate the IC.Type: ApplicationFiled: January 24, 2017Publication date: May 31, 2018Inventors: Tsun-Yu YANG, Wei-Yi HU, Jui-Feng KUAN, Hsien-Hsin Sean LEE, Po-Cheng PAN, Hung-Wen HUANG, Hung-Ming CHEN, Abhishek PATYAL
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Patent number: 9800462Abstract: A technique for setting network communications for a computer host having multiple network interface controllers (NICs) includes performing network communication for a baseboard management controller (BMC) using a first NIC. In response to actuation of a switch of a network connector jack that is associated with the first NIC, a switching signal is sent from the switch to the BMC. In response to receipt of the switching signal at the BMC, network communication for the BMC is performed using a second NIC.Type: GrantFiled: November 2, 2015Date of Patent: October 24, 2017Assignee: International Business Machines CorporationInventors: Yun-Ting Hsu, Tsungwu Yu, Yu Yu, Hung-Wen Huang
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Patent number: 9473352Abstract: A technique for setting network communications for a computer host having multiple network interface controllers (NICs) includes performing network communication for a baseboard management controller (BMC) using a first NIC. In response to actuation of a switch of a network connector jack that is associated with the first NIC, a switching signal is sent from the switch to the BMC. In response to receipt of the switching signal at the BMC, network communication for the BMC is performed using a second NIC.Type: GrantFiled: July 29, 2014Date of Patent: October 18, 2016Assignee: International Business Machines CorporationInventors: Yun-Ting Hsu, Tsungwu Yu, Yu Yu, Hung-Wen Huang
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Publication number: 20160247973Abstract: A Light-Emitting Diode (LED) includes a light-emitting structure having a passivation layer disposed on vertical sidewalls across a first doped layer, an active layer, and a second doped layer that completely covers at least the sidewalls of the active layer. The passivation layer is formed by plasma bombardment or ion implantation of the light-emitting structure. It protects the sidewalls during subsequent processing steps and prevents current leakage around the active layer.Type: ApplicationFiled: May 5, 2016Publication date: August 25, 2016Inventors: Hung-Wen HUANG, Hsing-Kuo HSIA, Ching-Hua CHIU
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Publication number: 20160057007Abstract: A technique for setting network communications for a computer host having multiple network interface controllers (NICs) includes performing network communication for a baseboard management controller (BMC) using a first NIC. In response to actuation of a switch of a network connector jack that is associated with the first NIC, a switching signal is sent from the switch to the BMC. In response to receipt of the switching signal at the BMC, network communication for the BMC is performed using a second NIC.Type: ApplicationFiled: November 2, 2015Publication date: February 25, 2016Inventors: YUN-TING HSU, TSUNGWU YU, YU YU, HUNG-WEN HUANG
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Publication number: 20160035933Abstract: A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.Type: ApplicationFiled: October 14, 2015Publication date: February 4, 2016Inventors: Yea-Chen LEE, Jung-Tang CHU, Ching-Hua CHIU, Hung-Wen HUANG
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Patent number: 9065015Abstract: A device includes a substrate; a group III-V semiconductor layer disposed over the substrate; and a seed layer disposed over the group III-V semiconductor layer. The substrate is a printed circuit board. The group III-V semiconductor layer includes a multiple quantum well (MQW) layer, a p-type doped layer, and an n-type doped layer. The seed layer includes a plurality of miniature elements. The miniature elements each contain a single-crystal material suitable for epitaxially growing the group III-V semiconductor layer. The miniature elements collectively cover less than 100% of a surface of the group III-V semiconductor layer.Type: GrantFiled: September 27, 2013Date of Patent: June 23, 2015Assignee: TSMC SOLID STATE LIGHTING LTD.Inventors: Jung-Tang Chu, Ching-Hua Chiu, Hung-Wen Huang, Yea-Chen Lee, Hsing-Kuo Hsia
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Publication number: 20150108424Abstract: A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.Type: ApplicationFiled: October 18, 2013Publication date: April 23, 2015Applicant: TSMC Solid State Lighting Ltd.Inventors: Hung-Wen Huang, Hsing-Kuo Hsia, Ching-Hua Chiu
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Publication number: 20150077911Abstract: A technique for setting network communications for a computer host having multiple network interface controllers (NICs) includes performing network communication for a baseboard management controller (BMC) using a first NIC. In response to actuation of a switch of a network connector jack that is associated with the first NIC, a switching signal is sent from the switch to the BMC. In response to receipt of the switching signal at the BMC, network communication for the BMC is performed using a second NIC.Type: ApplicationFiled: July 29, 2014Publication date: March 19, 2015Inventors: Yun-Ting HSU, Tsungwu YU, Yu YU, Hung-Wen HUANG
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Publication number: 20140187863Abstract: An endoscope controlling device includes a rigid tube mounted to an end face of a base and in communication with a compartment in the base. A positioning groove is formed in an inner periphery of the base and includes a bottom wall having a slot. A linear displacement control module includes a control member and a movable board. The control member is aligned with a through-hole in a periphery of the base. The control member controls longitudinal movement of the movable board in the compartment along a longitudinal axis of the base via a driving gear. An optical element receiving drum is mounted to the movable board. A rotational movement control module is mounted around the optical element receiving drum and received in the positioning groove of the base. A portion of the rotational movement control module is extended through the slot and exposed outside of the base.Type: ApplicationFiled: December 28, 2012Publication date: July 3, 2014Applicant: METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTREInventors: Cheng-Wen Lin, Wei-Jen Shih, Yen-Nien Chen, Tzyy-Ker Sue, Pei-Yuan Lee, Hung-Wen Huang, Chien-Sheng Lo
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Publication number: 20140021483Abstract: A seed layer for growing a group 111-V semiconductor structure 1s embedded in a dielectric material on a carrier substrate. After the group 111-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group 111-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.Type: ApplicationFiled: September 27, 2013Publication date: January 23, 2014Applicant: TSMC Solid State Lighting Ltd.Inventors: Jung-Tang Chu, Ching-Hua Chiu, Hung-Wen Huang, Yea-Chen Lee, Hsing-Kuo Hsia
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Patent number: 8592242Abstract: The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.Type: GrantFiled: November 18, 2010Date of Patent: November 26, 2013Assignee: TSMC Solid State Lighting Ltd.Inventors: Hung-Wen Huang, Hsing-Kuo Hsia, Ching-Hua Chiu
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Patent number: 8563334Abstract: A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.Type: GrantFiled: September 14, 2010Date of Patent: October 22, 2013Assignee: TSMC Solid State Lighting Ltd.Inventors: Hung-Wen Huang, Hsing-Kuo Hsia, Ching-Hua Chiu
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Patent number: 8546165Abstract: A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.Type: GrantFiled: September 8, 2011Date of Patent: October 1, 2013Assignee: TSMC Solid State Lighting Ltd.Inventors: Jung-Tang Chu, Ching-Hua Chiu, Hung-Wen Huang, Yea-Chen Lee, Hsing-Kuo Hsia
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Publication number: 20130187122Abstract: The present disclosure involves a method of fabricating a lighting apparatus. The method includes forming a first III-V group compound layer over a substrate. The first III-V group compound layer has a first type of conductivity. A multiple quantum well (MQW) layer is formed over the first III-V group compound layer. A second III-V group compound layer is then formed over the MQW layer. The second III-V group compound layer has a second type of conductivity different from the first type of conductivity. Thereafter, a plurality of conductive components is formed over the second III-V group compound layer. A light-reflective layer is then formed over the second III-V group compound layer and over the conductive components. The conductive components each have better adhesive and electrical conduction properties than the light-reflective layer.Type: ApplicationFiled: January 19, 2012Publication date: July 25, 2013Applicant: TAIWAN SEMICONDUTOR MANUFACTURING COMPANY, LTD.Inventors: Yea-Chen Lee, Jung-Gang Chu, Ching-Hua Chiu, Hung-Wen Huang
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Publication number: 20130140592Abstract: A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 ?m, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate.Type: ApplicationFiled: December 1, 2011Publication date: June 6, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yea-Chen Lee, Jung-Tang Chu, Ching-Hua Chiu, Hung-Wen Huang
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Publication number: 20130095581Abstract: A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.Type: ApplicationFiled: October 18, 2011Publication date: April 18, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yea-Chen Lee, Jung-Tang Chu, Ching-Hua Chiu, Hung-Wen Huang
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Patent number: 8415183Abstract: Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a wafer. The wafer has light-emitting diode (LED) devices formed thereon. The method includes immersing the wafer into a polymer solution that has a surface tension lower than that of acetic acid. The polymer solution contains a liquid polymer and phosphor particles. The method includes lifting the wafer out of the polymer solution at a substantially constant speed. The method includes drying the wafer. The above processes form a conformal coating layer at least partially around the LED devices. The coating layer includes the phosphor particles. The coating layer also has a substantially uniform thickness.Type: GrantFiled: November 22, 2010Date of Patent: April 9, 2013Assignee: TSMC Solid State Lighting Ltd.Inventors: Hsing-Kuo Hsia, Chih-Kuang Yu, Hung-Yi Kuo, Hung-Wen Huang
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Publication number: 20120126262Abstract: The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.Type: ApplicationFiled: November 18, 2010Publication date: May 24, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Wen Huang, Hsing-Kuo Hsia, Ching-Hua Chiu
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Publication number: 20120129282Abstract: Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a wafer. The wafer has light-emitting diode (LED) devices formed thereon. The method includes immersing the wafer into a polymer solution that has a surface tension lower than that of acetic acid. The polymer solution contains a liquid polymer and phosphor particles. The method includes lifting the wafer out of the polymer solution at a substantially constant speed. The method includes drying the wafer. The above processes form a conformal coating layer at least partially around the LED devices. The coating layer includes the phosphor particles. The coating layer also has a substantially uniform thickness.Type: ApplicationFiled: November 22, 2010Publication date: May 24, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsing-Kuo Hsia, Chih-Kuang Yu, Hung-Yi Kuo, Hung-Wen Huang