Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: An interconnect structure including a contact via in an interlayer dielectric, a first conductive feature in a first dielectric layer, the first dielectric layer over the interlayer dielectric, a first liner in the first dielectric layer, the first liner comprising a first part in contact with a sidewall surface of the first conductive feature, and a second part in contact with a bottom surface of the first conductive feature. The interconnect structure includes a first cap layer in contact with a top surface of the first conductive feature, a second conductive feature in a second dielectric layer, the second dielectric layer over the first dielectric layer, a second liner in the second dielectric layer, wherein the first and second conductive features comprise a first conductive material, and the contact via, first liner, first cap layer, and second liner comprise a second conductive material chemically different than the first conductive material.

Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Abstract: Embodiments provide a method and resulting structure that includes forming an opening in a dielectric layer to expose a metal feature, selectively depositing a metal cap on the metal feature, depositing a barrier layer over the metal cap, and depositing a conductive fill on the barrier layer.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: The present invention provides a method for segmenting lipid droplets that includes: inputting a pathological slice image into a machine learning model to output a region map and an boundary map, in which the region map includes multiple regional probability values, and the boundary map includes multiple boundary probability values; and segmenting multiple lipid droplets from the pathological slice image according to the regional probability values and the boundary probability values.

Abstract: A method for analyzing an immunohistochemistry (IHC) image is provided and includes: segmenting nuclei from the IHC image according to a machine learning model; removing pixels belonging to the nuclei and pixels in a color range from the IHC image to obtain multiple cytoplasmic pixels; assign the cytoplasmic pixels to the nuclei to form multiple cells according to the locations of the cytoplasmic pixels; and calculate a pixel staining score of each pixel in the cells, thereby calculating a cell staining score for each cell.

Abstract: A computer aided method for analyzing fibrosis is provided. First, a segmentation algorithm is performed on a medical image to obtain a segmentation image. Circular fibrosis is detected according to the segmentation image to determine a score. In some cases, it is also necessary to determine a number of fibrosis bridges and the condition of fiber expansion.

Abstract: The present invention relates to a method for manufacturing a device for heat transmission, dissipation and highly efficient capillary siphoning action. The method comprises preparing a metal substrate; processing a surface of the metal substrate to form a rugged surface layer thereon; neutralizing, cleaning and drying the metal substrate to remove oil and rust thereon; placing the metal substrate into a first vacuum chamber for heating, deoxygenizing by hydrogen gas and ion bombarding to the rugged surface layer. Further, the metal substrate can be selectively subject to deposition, decomposition, degradation and reaction treatments for obtainment of a device for heat transmission, dissipation and highly efficient capillary siphoning action.

Abstract: The present invention relates to a method for manufacturing a device for heat transmission, dissipation and highly efficient capillary siphoning action. The method comprises preparing a metal substrate; processing a surface of the metal substrate to form a rugged surface layer thereon; neutralizing, cleaning and drying the metal substrate to remove oil and rust thereon; placing the metal substrate into a first vacuum chamber for heating, deoxygenizing by hydrogen gas and ion bombarding to the rugged surface layer. Further, the metal substrate can be selectively subject to deposition, decomposition, degradation and reaction treatments for obtainment of a device for heat transmission, dissipation and highly efficient capillary siphoning action.

Abstract: A computer aided method for analyzing fibrosis is provided. First, a segmentation algorithm is performed on a medical image to obtain a segmentation image. Circular fibrosis is detected according to the segmentation image to determine a score. In some cases, it is also necessary to determine a number of fibrosis bridges and the condition of fiber expansion.

Abstract: A method for cutting wafers includes following steps. A silicon wafer is provided. A metal layer is formed on a top side of the silicon wafer. A bump layer is formed on the metal layer. A backside grinding tape is attached on the bump layer. A bottom side of the silicon wafer is half cut to form a cutting race. The bottom side of the silicon wafer is ground, so that a thickness of the silicon wafer is a predetermined thickness and only partial cutting race remains. The backside grinding tape is removed. A dicing tape is attached on the bottom side of the silicon wafer. The metal layer is cut by a laser. The metal layer is communicated with the cutting race. The manufacturing cost is reduced without crumbling or cracking. The chippings on the top or bottom side of the silicon wafer can be removed.

Abstract: A method of manufacturing carbon coated aluminum foil as a cathode of solid aluminum electrolytic capacitors Comprising the steps of: preparing an aluminum foil by setting the aluminum foil into a chamber; roughening at least one surface of the aluminum foil by introducing gas into the chamber and activating an electric field so that the gas is ionized and turned into a plasma; and depositing carbon atoms by introducing gas mixed with carbon atoms and turning on the electric field again so as to make the carbon atoms have positive charge thereby impacting into and attaching firmly to the rough surface of the aluminum foil to form a carbon film.

Abstract: A carbon coated aluminum foil as a cathode of solid aluminum electrolytic capacitors and a manufacturing method thereof are revealed. A surface of an aluminum foil is hit by ions turned into a rough surface. Then carbon atoms are mounted into the surface of the aluminum foil and accumulated sequentially to form a carbon film on the surface of the aluminum foil. Thus the carbon atoms are attached to the surface of the aluminum foil firmly due to the roughness of the surface. Moreover, the carbon film has good adhesion and electrical conductivity. Therefore, not only mechanical strength of the aluminum foil is increased dramatically, the electrical conductivity, capacitance ratio, power density and use life of capacitors are also improved significantly.

Abstract: A belt post includes a post with a box on a top of the post and a reel of belt is received in the box. A spring box is engaged with the top of the box and the mandrel of the reel is engaged with the spring. A head assembly is connected to a distal end of the belt and includes a movable piece which is retractably received in a body with a spring biased therebetween. The head assembly is easily to be engaged between a top cap and a bottom cap of another box by pushing the movable piece to change the length the combination of the body and the movable piece.

Abstract: A belt post includes a post with a box on a top of the post and a reel of belt is received in the box. A spring box is engaged with the top of the box and the mandrel of the reel is engaged with the spring. A head assembly is connected to a distal end of the belt and includes a movable piece which is retractably received in a body with a spring biased therebetween. The head assembly is easily to be engaged between a top cap and a bottom cap of another box by pushing the movable piece to change the length the combination of the body and the movable piece.

Abstract: A package bag expanding device includes a box and a pivotable cover which has a hole defined therethrough. A frame includes two first rods and a second rod respectively extending laterally therefrom. At least one package bag has two holes defined therethrough, a recess defined in an upper edge thereof and an opening defined therein below the holes. The two first rods extend through the two holes and the second rod is received in the recess. A pressing mechanism is fixedly disposed to one of two side walls of the box and includes an arm pivotally connected thereto which has a distal end rested on a periphery defining the opening of the package bag.