METHOD FOR MANUFACTURING DEVICE FOR HEAT TRANSMISSION, DISSIPATION AND HIGHLY EFFICIENT CAPILLARY SIPHONING ACTION
The present invention relates to a method for manufacturing a device for heat transmission, dissipation and highly efficient capillary siphoning action. The method comprises preparing a metal substrate; processing a surface of the metal substrate to form a rugged surface layer thereon; neutralizing, cleaning and drying the metal substrate to remove oil and rust thereon; placing the metal substrate into a first vacuum chamber for heating, deoxygenizing by hydrogen gas and ion bombarding to the rugged surface layer. Further, the metal substrate can be selectively subject to deposition, decomposition, degradation and reaction treatments for obtainment of a device for heat transmission, dissipation and highly efficient capillary siphoning action.
The present invention relates to a method for manufacturing a device for heat transmission, dissipation and highly efficient capillary siphoning action, which increases a heat dissipation area and a heat transmission and dissipation rate of the device so as to lower a manufacturing cost.
2. Description of Related ArtWith the rapid development of high technology, a volume of an electronic component tends to be smaller, a density of the electronic component in a unit area tends to be higher, and efficacies of the electronic component tend to be more powerful. Therefore, a total heat generation quantity of the electronic component is yearly increased, so that a traditional heat dissipating device cannot dissipate the total heat generation quantity quickly. When the total heat generated by the electronic component is not removed efficiently, it leads to an electronic ionization and a thermal stress situation of the electronic component which deduces an overall stability and a using life of the electronic component. So, how to dissipate the heat generated from the electronic component and prevent a overheat situation thereof are problems that cannot be ignored.
SUMMARY OF THE INVENTIONThe present invention provides a method for manufacturing a device for heat transmission, dissipation and highly efficient capillary siphoning action. The method is able to increase a heat dissipation area and a heat transmission and dissipation rate of the device so as to lower a manufacturing cost.
The method of manufacturing the device for heat transmission, dissipation and highly efficient capillary siphoning action comprises the steps of (a) preparing a metal substrate having a high thermal conductivity, (b) processing a surface of the metal substrate to form a rugged surface layer, (c) neutralizing, washing and drying the rugged surface layer of the metal substrate in a chemical or physical manner, (d) placing the cleaned and dried metal substrate into a first vacuum chamber for metal ion bombardment and (e) placing the metal substrate after being ion bombarded into a second vacuum chamber for deposition.
According to an embodiment of the present invention, the metal substrate is a galvanized iron material, a copper material or an aluminum material.
According to an embodiment of the present invention, in the step (b) the surface of the metal substrate is washed by a chemical reagent to remove oil and rust, and further corroded to form the rugged surface layer.
According to an embodiment of the present invention, in the step (b) the surface of the metal substrate is washed by a chemical reagent to remove oil and rust, and further electrochemically processed to form the rugged surface layer.
According to an embodiment of the present invention, an argon ion, or a metal ion same as that released from the metal substrate is used for the ion bombardment in the step (d).
According to an embodiment of the present invention, the deposition treatment set forth in the step (e) is done by use of a metal target made of a material same with the metal substrate to form a rugged porous deposition layer.
According to an embodiment of the present invention, the method for manufacturing the device for heat transmission, dissipation and highly efficient capillary siphoning action further comprises the steps of spraying a gas mixture on the rugged porous deposition layer of the metal substrate in a third chamber at a temperature ranging from 150° C. to 600° C. for decomposition and degradation into a tube-like or sheet-like object having a graphitized structure after the step (e), wherein the gas mixture is prepared by dissolving a metal salt into an organic solvent, and further mixing the organic solvent containing the metal salt with hydrogen gas and a hydrocarbon organic compound, or with argon gas and a hydrocarbon organic compound, and then placing the metal substrate under an atmospheric pressure or a negative pressure for reaction, cooling the metal substrate to a temperature below 100° C., and taking the metal substrate out of the third chamber.
According to an embodiment of the present invention, the method of manufacturing the device for heat transmission, dissipation and highly efficient capillary siphoning action comprises the steps of (a) preparing a metal substrate having a high thermal conductivity, (b) processing a surface of the metal substrate to form a rugged surface layer, (c) neutralizing, washing and drying the rugged surface layer of the metal substrate in a chemical or physical manner, (d) placing the cleaned and dried metal substrate into a first vacuum chamber for metal ion bombardment, (e) spraying a gas mixture on the rugged surface layer of the metal substrate in a third chamber at a temperature ranging from 150° C. to 600° C. for decomposition and degradation into a tube-like or sheet-like object having a graphitized structure, wherein the gas mixture is prepared by dissolving a metal salt into an organic solvent, and further mixing the organic solvent containing the metal salt with hydrogen gas and a hydrocarbon organic compound, or with argon gas and a hydrocarbon organic compound and (f) placing the metal substrate under an atmospheric pressure or a negative pressure for reaction, cooling the metal substrate to a temperature below 100° C., and taking the metal substrate out of the third chamber.
According to an embodiment of the present invention, the metal salt is selected from the group consisting of iron, nickel, cobalt or a mixture thereof.
According to an embodiment of the present invention, the metal substrate is a solid object, a hollow tube, a hollow object, a hollow box, or a geometric shaped object.
To provide a thorough understanding, the purpose and advantages of the present invention will be described in detail with reference to the accompanying drawings.
Referring to
(a) preparing a metal substrate (1) having a high thermal conductivity;
(b) processing a surface of the metal substrate (1) to form a rugged surface layer (11);
(c) neutralizing, washing and drying the rugged surface layer (11) of the metal substrate (1) in a chemical or physical manner to remove dirt and oil on the rugged surface layer;
(d) placing the metal substrate (1) after being cleaned and dried into a first vacuum chamber for metal ion bombardment, and an argon ion or a metal ion same as that released from the metal substrate (1) is used for the ion bombardment.
The step (a) to step (d) described above are pre-processing steps to the metal substrate (1), and three embodiments for manufacturing the device for heat transmission, dissipation and highly efficient capillary siphoning action by processing the pre-processed metal substrate (1) are disclosed below.
Embodiment 1Referring to
Referring to
Referring to
The metal substrate (1) having the rugged porous deposition layer (2) is then placed into a third chamber, and a gas mixture is sprayed on the rugged porous deposition layer (2) at a temperature ranging from 150° C. to 600° C. for decomposition and degradation into a tube-like or sheet-like object having a graphitized structure (3). The gas mixture is prepared by dissolving a metal salt into an organic solvent and further mixing the organic solvent containing the metal salt with hydrogen gas and a hydrocarbon organic compound, or with argon gas and a hydrocarbon organic compound. And then the metal substrate (1) is placed under an atmospheric pressure or a negative pressure for reaction. After the metal substrate (1) is cooled to a temperature below 100° C., the metal substrate (1) is taken out of the third chamber.
Referring to
The surface-processed metal substrate (1) is than neutralized, washed and dried by a chemical manner or a physical manner to remove dirt and oil on the surface of the metal substrate (1). The metal substrate (1) being cleaned and dried is then placed into a first vacuum chamber for metal ion bombardment for a period of time to further clean the surface of the metal substrate (1) so as to increase adhesion ability of the surface.
Referring to
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Accordingly, the present invention has the advantages listed below:
1. A device for heat transmission, dissipation and highly efficient capillary siphoning action prepared by the present invention has a large heat dissipation area.
2. A device for heat transmission dissipation and highly efficient capillary siphoning action prepared by the present invention has a great heat absorption and dissipation ability.
3. A device for heat transmission, dissipation and highly efficient capillary siphoning action prepared by the present invention has antioxidant ability.
4. A device for heat transmission, dissipation and highly efficient capillary siphoning action prepared by the present invention saves a using amount of materials effectively.
5. A device for heat transmission, dissipation and highly efficient capillary siphoning action prepared by the present invention is small in volume.
Claims
1. A method for manufacturing a device for heat transmission, dissipation and highly efficient capillary siphoning action, comprising:
- (a) preparing a metal substrate having a high thermal conductivity;
- (b) processing a surface of the metal substrate to form a rugged surface layer;
- (c) neutralizing, washing and drying the rugged surface layer of the metal substrate in a chemical or physical manner to remove dirt and oil on the rugged surface layer;
- (d) placing the metal substrate after being cleaned and dried into a first vacuum chamber for metal ion bombardment;
- (e) placing the metal substrate after being ion bombarded into a second vacuum chamber for deposition by using a metal target made of a material same with the metal substrate to form a rugged porous deposition layer;
- (f) spraying a gas mixture on the rugged porous deposition layer of the metal substrate in a third chamber at a temperature ranging from 150° C. to 600° C. for decomposition and degradation into a substantially tubular or planar object having a graphitized structure, wherein the gas mixture is prepared by a process including dissolving a metal salt into an organic solvent and mixing the organic solvent containing the metal salt with hydrogen gas and a hydrocarbon organic compound or argon gas and a hydrocarbon organic compound; and
- (g) placing the metal substrate under an atmospheric pressure or a negative pressure for reaction, cooling the metal substrate to a temperature below 100° C., and taking the metal substrate out of the third chamber.
2. (canceled)
3. The method as claimed in claim 1, wherein the metal substrate is made of a galvanized iron material, a copper material or an aluminum material.
4. The method as claimed in claim 1, wherein the surface of the metal substrate is washed by a chemical reagent and further corroded to form the rugged surface layer in process (b).
5. The method as claimed in claim 1, the surface of the metal substrate is washed by a chemical reagent and further electrochemically processed to form the rugged surface layer in process (b).
6. The method as claimed in claim 1, wherein an argon ion or a metal ion corresponding to an ion released from the metal substrate is used for the ion bombardment in process (d).
7. The method as claimed in claim 1, wherein the metal substrate is a solid object, a hollow tube, a hollow object, a hollow box, or an object of a geometric shape.
8. The method as claimed in claim 1, wherein the metal salt is selected from the group consisting of iron, nickel, cobalt or a mixture thereof in process (f).
9. A method for manufacturing a device for heat transmission, dissipation sand highly efficient capillary siphoning action, comprising:
- (a) preparing a metal substrate having a high thermal conductivity;
- (b) processing a surface of the metal substrate to form a rugged surface layer;
- (c) neutralizing, washing and drying the rugged surface layer of the metal substrate in a chemical or physical manner to remove dirt and oil on the rugged surface layer;
- (d) placing the metal substrate after being cleaned and dried into a first vacuum chamber for metal ion bombardment;
- (e) spraying a gas mixture on the rugged surface layer of the metal substrate in a third chamber at a temperature ranging from 150° C. to 600° C. for decomposition and degradation into a substantially tubular or planar object having a graphitized structure, wherein the gas mixture is prepared by a process including dissolving a metal salt into an organic solvent and mixing the organic solvent containing the metal salt with hydrogen gas and a hydrocarbon organic compound, or with argon gas and a hydrocarbon organic compound; and
- (f) placing the metal substrate under an atmospheric pressure or a negative pressure for reaction, cooling the metal substrate to a temperature below 100° C., and taking the metal substrate out of the third chamber.
10. The method as claimed in claim 9, wherein the metal substrate is made of a galvanized iron material, a copper material or an aluminum material.
11. The method as claimed in claim 9, wherein the surface of the metal substrate is washed by a chemical reagent and further corroded to form the rugged surface layer in process (b).
12. The method as claimed in claim 9, wherein the surface of the metal substrate is washed by a chemical reagent and further electrochemically processed to form the rugged surface layer in process (b).
13. The method as claimed in claim 9, wherein an argon ion or a metal ion same as that released from the metal substrate is used for the ion bombardment in process (d).
14. The manufacturing method as claimed in claim 9, wherein the metal substrate is a solid object, a hollow tube, a hollow object, a hollow box, or an object of a geometric shape.
15. The manufacturing method as claimed in claim 9, wherein the metal salt is selected from the group consisting of iron, nickel, cobalt or a mixture thereof in process (e).
Type: Application
Filed: Dec 7, 2018
Publication Date: Jun 11, 2020
Inventors: HUNG-WEN TSAI (YUNLIN COUNTY), CHENG CHING TSAI (JHUBEI CITY)
Application Number: 16/212,988