Abstract: An electronic device includes a bond wire with a first end bonded by a ball bond to a planar side of a first conductive plate, and a second end bonded by a stitch bond to a conductive stud bump at an angle greater than or equal to 60 degrees. A wirebonding method includes bonding the first end of the conductive bond wire to the first conductive plate includes forming a ball bond to join the first end of the conductive bond wire to a planar side of the first conductive plate by a ball bond, and bonding the second end of the conductive bond wire to the conductive stud bump includes forming a stitch bond to join the second end of the conductive bond wire to the conductive stud bump.

Abstract: A microelectronic device includes a galvanic isolation component having a lower isolation element over a substrate with lower bond pads connected to the lower isolation element, a dielectric plateau over the lower isolation element that does not extend to the lower bond pads, and an upper isolation element and upper bond pads over the dielectric plateau. The upper bond pads are laterally separated from the lower bond pads by an isolation distance. The microelectronic device includes high voltage wire bonds on the upper bond pads that extend upward, within 10 degrees of vertical, for a vertical distance greater than the isolation distance. The microelectronic device further includes low voltage wire bonds on the lower bond pads that have a loop height directly over a perimeter of the substrate that is less than 5 times a wire diameter of the low voltage wire bonds.

Abstract: An apparatus includes a laminate, the laminate including a dielectric layer having a first surface and a second surface opposed to the first surface, and a conductive layer forming a circuit element overlying the first surface of the dielectric layer. The apparatus further includes a magnetic layer over the conductive layer. A first edge surface of the magnetic layer is coplanar with a first edge surface of the laminate, and a second edge surface of the magnetic layer is coplanar with a second edge surface of the laminate.

Abstract: An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive pad having a generally planar top surface that includes a cavity having a bottom surface and sidewalls extending from the bottom surface of the cavity to the top surface of the pad. An electronic device is attached to the top surface of the electrically conductive pad. A wire bond is attached from the electronic device to the bottom surface of the cavity. A molding compound encapsulates the electronic device.

Abstract: In some examples a semiconductor chip package includes a conductive terminal. In addition, the semiconductor chip package includes a die pad including a top side and a recess extending into the top side. The die pad is downset relative to the conductive terminal. Further, the semiconductor ship package includes a semiconductor die positioned within the recess, wherein the semiconductor die has an outer perimeter, and a solder fillet engaged within the recess and with the outer perimeter of the semiconductor die. Still further, the semiconductor chip package includes a wire bond coupled to the semiconductor die and the conductive terminal, and a mold compound covering the conductive terminal, the wire bond, the die pad, and the semiconductor die.

Abstract: In a described example, an apparatus includes: a package substrate having a die mount portion and lead portions spaced from the die mount portion; a semiconductor die over the die mount portion having bond pads on an active surface facing away from the package substrate; non-gold bond wires forming electrical connections between at least one of the bond pads and one of the lead portions of the package substrate; a bond stitch on bump connection formed between one of the non-gold bond wires and a bond pad of the semiconductor die, comprising a stitch bond formed on a flex stud bump; and dielectric material covering a portion of the package substrate, the semiconductor die, the non-gold bond wires, the stitch bond and the flex stud bump, forming a packaged semiconductor device.

Abstract: In an example, an apparatus comprises a lead frame that includes a first row of leads, a first pad coupled to th first row of leads, and a second row of leads parallel to the first row of leads. The lead frame also includes a second pad coupled to the second row of leads. The first and second pads are separated by a gap, and each of the first and second pads has a substantially uniform thickness. The apparatus also includes a device coupled to the first and second pads. The first and second pads are exposed to an exterior of the apparatus.

Abstract: An electronic device with a conductive lead having an internal first section and an external second section extending outside a molded package structure, the first section having an obstruction feature extending vertically from a top or bottom side of the conductive lead and engaging a portion of the package structure to oppose movement of the conductive lead outward from the package structure.

Abstract: In some examples, a semiconductor package comprises a lead frame. The lead frame includes a first row of leads; a first pad coupled to the first row of leads; a second row of leads; and a second pad coupled to the second row of leads, the first and second pads separated by a gap. The semiconductor package includes a heat-generating device coupled to the first and second pads and exposed to an exterior of the semiconductor package.

Abstract: In an example, an apparatus comprises a lead frame that includes a first row of leads, a first pad coupled to the first row of leads, and a second row of leads parallel to the first row of leads. The lead frame also includes a second pad coupled to the second row of leads. The first and second pads are separated by a gap, and each of the first and second pads has a substantially uniform thickness. The apparatus also includes a device coupled to the first and second pads. The first and second pads are exposed to an exterior of the apparatus.

Abstract: In some examples a semiconductor chip package includes a conductive terminal. In addition, the semiconductor chip package includes a die pad including a top side and a recess extending into the top side. The die pad is downset relative to the conductive terminal. Further, the semiconductor ship package includes a semiconductor die positioned within the recess, wherein the semiconductor die has an outer perimeter, and a solder fillet engaged within the recess and with the outer perimeter of the semiconductor die. Still further, the semiconductor chip package includes a wire bond coupled to the semiconductor die and the conductive terminal, and a mold compound covering the conductive terminal, the wire bond, the die pad, and the semiconductor die.

Abstract: An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive pad having a generally planar top surface that includes a cavity having a bottom surface and sidewalls extending from the bottom surface of the cavity to the top surface of the pad. An electronic device is attached to the top surface of the electrically conductive pad. A wire bond is attached from the electronic device to the bottom surface of the cavity. A molding compound encapsulates the electronic device.

Abstract: In a described example, an apparatus includes: a package substrate having a die mount portion and lead portions spaced from the die mount portion; a semiconductor die over the die mount portion having bond pads on an active surface facing away from the package substrate; non-gold bond wires forming electrical connections between at least one of the bond pads and one of the lead portions of the package substrate; a bond stitch on bump connection formed between one of the non-gold bond wires and a bond pad of the semiconductor die, comprising a stitch bond formed on a flex stud bump; and dielectric material covering a portion of the package substrate, the semiconductor die, the non-gold bond wires, the stitch bond and the flex stud bump, forming a packaged semiconductor device.

Abstract: An electronic device includes a bond wire with a first end bonded by a ball bond to a planar side of a first conductive plate, and a second end bonded by a stitch bond to a conductive stud bump at an angle greater than or equal to 60 degrees. A wirebonding method includes bonding the first end of the conductive bond wire to the first conductive plate includes forming a ball bond to join the first end of the conductive bond wire to a planar side of the first conductive plate by a ball bond, and bonding the second end of the conductive bond wire to the conductive stud bump includes forming a stitch bond to join the second end of the conductive bond wire to the conductive stud bump.

Abstract: A method for evaluating a leadframe surface includes positioning a leadframe on a measurement apparatus at a first predetermined distance relative to an end portion of a light source of an optical sensor; irradiating a predetermined area on a surface of the leadframe with light having a single predetermined wavelength from the light source; receiving, with a light receiver of the optical sensor, reflected light from the predetermined area on the surface of the leadframe, and converting the reflected light into an electric signal; determining a reflection intensity value of the predetermined area on the surface of the leadframe based on the electric signal; and calculating a reflection ratio of the predetermined area on the surface of the leadframe based on the reflection intensity value and a predetermined reference reflection intensity value associated with the light source.

Abstract: An apparatus includes a laminate, the laminate including a dielectric layer having a first surface and a second surface opposed to the first surface, and a conductive layer forming a circuit element overlying the first surface of the dielectric layer. The apparatus further includes a magnetic layer over the conductive layer. A first edge surface of the magnetic layer is coplanar with a first edge surface of the laminate, and a second edge surface of the magnetic layer is coplanar with a second edge surface of the laminate.

Abstract: An integrated circuit package having a shunt resistor with at least one self-aligning member that protrudes from a first surface, and a lead frame with at least one self-aligning feature that is a cavity within which the at least one self-aligning member is located, and an integrated circuit located on the lead frame.

Abstract: In some examples, a semiconductor package comprises a lead frame. The lead frame includes a first row of leads; a first pad coupled to the first row of leads; a second row of leads; and a second pad coupled to the second row of leads, the first and second pads separated by a gap. The semiconductor package includes a heat-generating device coupled to the first and second pads and exposed to an exterior of the semiconductor package.

Abstract: Aspects of the disclosure relate generally to semiconductor packaging, and specifically to semiconductor device having a lead frame having a semiconductor supporting die pad that is capable of engaging with a wire bonding clamp.