Abstract: Provided is a semiconductor device structure including the following. A first transistor device and a second transistor device include a first contact structure and a second contact structure closely adjacent to each other and in a surface region of a substrate. Also, an isolation structure extends between the first contact structure and the second contact structure in the substrate, and has at least one laterally protruding structure laterally protruding with respect to a vertically extending body portion of the isolation structure. The at least one laterally protruding structure is at least partially located below the first contact structure and the second contact structure.

Abstract: A semiconductor device and a formation method thereof are provided. The semiconductor device includes a substrate, a contact pad, first and second conductive layers, a dielectric layer, a first contact, and an isolation element. The substrate includes a memory array area and a peripheral area. The contact pad is disposed on the substrate. The first conductive layer is disposed on the contact pad and in the memory array area. The dielectric layer is disposed on the first conductive layer and in the memory array area and the peripheral area. The second conductive layer is disposed on the dielectric layer and in the memory array area and the peripheral area. The first contact is disposed in the peripheral area and electrically connected to the contact pad in the peripheral area. The isolation element is disposed in the peripheral area and between the second conductive layer and the first contact.

Abstract: A method for performing in-band spectrum sharing in a mixed TN-NTN system is provided. The method is performed by a user equipment (UE). The UE receives reference signal (RS) configuration information from a satellite or TN base station and obtains measurement results indicative of coupling loss or interference based on the RS configuration. The UE transmits a measurement report to the satellite or an uplink RS to the TN base station for resource allocation decisions. The UE operates according to resource allocation results indicating a partition of shared radio resources across frequency, time, or polarization domains to mitigate interference. Finally, the UE communicates using the allocated resource portion of the shared radio resources.

Abstract: This management apparatus comprises: an acquisition unit that acquires an execution request for requesting execution of one of a plurality of QoS controls; and a quality control unit that, when resources for executing a QoS control of a start candidate indicated by the execution request are not insufficient, executes the QoS control of the start candidate, and that, when some or all resources are insufficient due to ongoing execution of one or more QoS controls other than the QoS control of the start candidate among the plurality of QoS controls, determines whether to execute the QoS control of the start candidate, on the basis of the execution priority order of the QoS control of the start candidate and the execution priority order of the currently executed QoS controls.

Abstract: A wireless communication method of a communication device includes: performing at least one communication operation with a network via a first channel (CH); and operating on a second CH according to at least one of an indication, a temporal constraint, and an interference condition; wherein at least one non-primary CH access (NPCA) CH is obtained by the network.

Abstract: A three-dimensional semiconductor device includes a stack of alternating memory cell layers and insulating layers over a substrate, and several bit lines formed on the substrate and separated from each other. The bit lines and the memory cell layers define an array of stacked memory cells that includes several memory cells. One of the memory cells includes a body, a gate structure and a conductive portion. The body that is on the substrate has a first surface and a second surface opposite the first surface. One side of the body is connected to one of the bit lines. The gate structure and the conductive portion are formed on the opposite first and second surfaces. The conductive portion is formed between adjacent memory cell layers and is in direct contact with the body.

Abstract: A wireless communication method performed by a communication device which communicates with a network includes performing at least one communication operation with the network via a first channel (CH); and operating on a second CH according to at least one of an indication, a temporal constraint, and an interference condition.

Abstract: A method for performing radio resource allocation in a TN-NTN mixed system is provided. The system includes a satellite that covers an NTN cell, and a plurality of TN base stations (TN BSs) within a coverage of the satellite. The NTN cell serves a plurality of NTN user equipments (NTN UEs). The method includes dividing the plurality of NTN UEs into X NTN UE groups; partitioning a radio resource into M parts, where M?X; dividing the plurality of TN BSs into M TN BS groups; deciding radio resource allocation regarding the plurality of NTN UEs, by allocating an i-th part of the radio resource to an i-th NTN UE group, where i=1, 2, . . . , X; and deciding radio resource allocation regarding the plurality of TN BSs, by allocating a sum of a j-th to an M-th parts of the radio resource to a j-th TN BS group, where j=1, 2, . . . , M.

Abstract: A method of channel measurement for intelligent reflecting surface assisted wireless network and a base station (BS) using the same method are provided. The method includes: transmitting a measurement configuration comprising mode information of an intelligent reflecting surface to a user equipment; receiving a measurement report corresponding to the measurement configuration from the user equipment, wherein the measurement report corresponds to a channel between the user equipment and the intelligent reflecting surface; and outputting a command according to the measurement report.

Abstract: According to an aspect of the disclosure, the disclosure is directed to a wireless communication apparatus on a vehicle. The wireless communication the apparatus includes (not limited to): first wireless transceiver configured to transmit and receive data on a first communication path; a second wireless transceiver configured to transmit and receive data on a second communication path; and a processor electrically connected to the first wireless transceiver and the second wireless transceiver and configured at least to: establish, as a default mean of communication, multiple communication paths; transmit by the first wireless transceiver, as the default mean of communication, a first data packet to the network located outside of the vehicle on a first communication path; and transmit by the second wireless transceiver, as the default mean of communication, a first duplicated data packet of the first data packet to the network on a second communication path.

Abstract: A method of electric vehicle (EV) battery nominal zone-aware charging communication executed by an supply equipment communication controller (SECC) of an EV supply equipment (EVSE), the SECC establishes a communication connection with an EVCC of an EV, and the method includes the following: (a) receiving a service selection message from the EVCC; (b) receiving a battery characteristics report request message from the EVCC; (c) based on the messages received from the EVCC, estimating a nominal zone of the battery for charging and discharging and planning a charging schedule for EV battery nominal zone-aware charging; (d) during the charging and discharging of the battery, the SECC receives from the EVCC a present state of charge (SOC) of the battery and a present status of the battery to execute the charging schedule for the EV battery nominal zone-aware charging, so as to avoid accelerated battery degradation and to extend battery lifetime.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first source/drain region and a second source/drain region disposed within the substrate, and a gate structure disposed on the substrate and between the first source/drain region and the second source/drain region. The semiconductor device further includes an interlayer dielectric layer disposed over the first source/drain region, the second source/drain region, and the gate structure. The interlayer dielectric layer includes a second trench extending into the second source/drain region. The semiconductor device further includes a dielectric layer disposed in the second trench, and a second source/drain contact disposed over the second source/drain region and filling the remaining portion of the second trench.

Abstract: A method of channel measurement for intelligent reflecting surface assisted wireless network and a base station (BS) using the same method are provided. The method includes: transmitting a measurement configuration comprising mode information of an intelligent reflecting surface to a user equipment; receiving a measurement report corresponding to the measurement configuration from the user equipment, wherein the measurement report corresponds to a channel between the user equipment and the intelligent reflecting surface; and outputting a command according to the measurement report.

Abstract: A wireless communication apparatus is provided. The wireless communication apparatus includes a transceiver set and a processor electrically connected to the transceiver set. The transceiver set is configured to simultaneously communicate with a first base station through a first channel according to a first band setting and a second base station through a second channel according to a second band setting that is different from the first band setting. The processor is configured to: generate a first prediction time of reaching a first handover event corresponding to the first base station using a handover prediction model; generate a second prediction time of reaching a second handover event corresponding to the second base station using the handover prediction model; and determine whether to change one of the first band setting and the second band setting according to the first prediction time, the second prediction time and a threshold value.

Abstract: A method of inter-cell coordination for intelligent reflecting surface (IRS) assisted wireless network is provided. The method includes: receiving mode information corresponding to a first intelligent reflecting surface and a second intelligent reflecting surface; performing a channel measurement according to the mode information to generate a measurement report; transmitting the measurement report to a serving base station; and performing data transmission via the first intelligent reflecting surface and the second intelligent reflecting surface configured according to the measurement report.

Abstract: A semiconductor device includes a substrate, a first bottom electrode, a first storage capacitor, a first top electrode, a second bottom electrode, a second storage capacitor, and a second top electrode. The first bottom electrode is disposed over the substrate. The first storage capacitor is disposed over the first bottom electrode. The first top electrode is disposed over the first storage capacitor. The second bottom electrode is disposed over, and electrically coupled to, the first top electrode. The second storage capacitor is disposed over the second bottom electrode. The second storage capacitor vertically overlaps the first storage capacitor. The second top electrode is disposed over the second storage capacitor.

Abstract: A method applied to an electric vehicle supply equipment (EVSE) for monitoring an electric vehicle (EV) battery temperature is disclosed. The method is performed by a supply equipment communication controller (SECC) of the EVSE. The SECC communicates with an electric vehicle communication controller (EVCC) of the EV and executes a dynamic control mode. The method has step (a): receiving battery specification information from the EVCC by the SECC; step (b): setting and storing multiple threshold temperatures according to the battery specification information by the SECC; step (c): receiving a present battery temperature from the EVCC during charging or discharging by the SECC; and step (d): determining, by the SECC, whether the present battery temperature is higher or lower than the threshold temperatures respectively, and accordingly modifying a charge schedule of the dynamic control mode by the SECC.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, an isolation feature, a word line and a doped region. The substrate has an active region. The isolation feature is disposed in the substrate to define the active region. The word line is buried in the substrate and extends across the active region and the isolation feature. The word line includes a first conductive structure and a second conductive structure disposed on the first conductive structure. The doped region is disposed in the active region and adjacent to the word line, wherein a top surface of the first conductive structure is below a bottom surface of the doped region.

Abstract: A method of inter-cell coordination for intelligent reflecting surface (IRS) assisted wireless network is provided. The method includes: receiving mode information corresponding to a first intelligent reflecting surface and a second intelligent reflecting surface; performing a channel measurement according to the mode information to generate a measurement report; transmitting the measurement report to a serving base station; and performing data transmission via the first intelligent reflecting surface and the second intelligent reflecting surface configured according to the measurement report.

Abstract: A semiconductor structure including a substrate and an isolation structure is provided. The substrate includes a device region. The isolation structure is located in the substrate. The isolation structure surrounds the device region. The isolation structure includes a first dielectric layer and a second dielectric layer. The first dielectric layer and the second dielectric layer are located in the substrate. The first dielectric layer is located between the second dielectric layer and the substrate. The second dielectric layer includes a first portion and a second portion. The second portion is located on the first portion. The distance between the second portion and the substrate in the device region is greater than the distance between the first portion and the substrate in the device region.