Abstract: A business process software program is executed in a processing element comprising a memory and a processor coupled to the memory. The processor is operative to identify within the software program one or more communications services inserted as generic design elements therein, and for each of the identified communications services, to initiate the execution of one or more corresponding communications tasks. At least one of the communications services may comprise a composite communications service which itself comprises a plurality of communications services.

Abstract: A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.

Abstract: Embodiments of the invention generally provide etch or CVD plasma processing methods and apparatus used to generate a uniform plasma across the surface of a substrate by modulation pulsing the power delivered to a plurality of plasma controlling devices found in a plasma processing chamber. The plasma generated and/or sustained in the plasma processing chamber is created by the one or more plasma controlling devices that are used to control, generate, enhance, and/or shape the plasma during the plasma processing steps by use of energy delivered from a RF power source. Plasma controlling devices may include, for example, one or more coils (inductively coupled plasma), one or more electrodes (capacitively coupled plasma), and/or any other energy inputting device such as a microwave source.

Abstract: A process for the hydrogenation of a hydrocarbon feed includes contacting a major amount of the hydrocarbon feed with hydrogen in a counter-current manner in a first reaction zone under hydrogenation reaction conditions in the presence of a hydrogenation catalyst in at least a first catalyst bed wherein a liquid effluent exits at a bottom end of the first reaction zone and a hydrogen-containing gaseous effluent exits at a top end of the first reaction zone, and contacting a minor portion of the hydrocarbon feed with said hydrogen-containing gaseous effluent in a co-current manner in a second reaction zone having a catalyst bed positioned to receive the hydrogen-containing effluent of the first reaction zone.

Abstract: A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.

Abstract: A communications system employs frequency division duplexing to accommodate symmetric and asymmetric services, while substantially eliminating near-end cross talk. Upstream and downstream channels are separated by a guard band in order to insure that near-end cross talk is kept to a minimum. An asymmetric upstream channel is preferably located at a lower frequency range than that of the asymmetric downstream channel. The guard band between these asymmetric upstream and downstream channels shifts in frequency along with the shift in frequency of the respective upstream and downstream channels as a function of reach. This guard band shifting permits the communications systems to utilize a greater percentage of the frequencies available to it and to thereby substantially maximize the communications rate that it can support. Although the asymmetric guard band is allowed to shift in the manner described, it is not allowed to do so in a manner that would create a conflict with symmetric channels.

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

Abstract: A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber, a substrate holder for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate holder, the dielectric member forming a wall of the processing chamber a gas supply for supplying gas to the chamber, directed towards the substrate, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas supply may comprise a primary gas ring and a secondary gas ring for supplying gases or gas mixtures into the chamber. The gas supply may further include injectors attached to the primary gas ring which inject gas into the chamber, directed toward the substrate. The plasma processing system may also include a cooling mechanism for cooling the primary gas ring during processing.

Abstract: A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.

Abstract: A communications system employs frequency division duplexing to accommodate symmetric and asymmetric services, while substantially eliminating near-end cross talk. Upstream and downstream channels are separated by a guard band in order to insure that near-end cross talk is kept to a minimum. An asymmetric upstream channel is preferably located at a lower frequency range than that of the asymmetric downstream channel. The guard band between these asymmetric upstream and downstream channels shifts in frequency along with the shift in frequency of the respective upstream and downstream channels as a function of reach. This guard band shifting permits the communications systems to utilize a greater percentage of the frequencies available to it and to thereby substantially maximize the communications rate that it can support. Although the asymmetric guard band is allowed to shift in the manner described, it is not allowed to do so in a manner that would create a conflict with symmetric channels.

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

Abstract: A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas supply comprising one or more injector tubes extending rectilinearly in the plasma processing chamber and having one or more orifices in a sidewall for supplying gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas is supplied through orifices located outside of regions at the distal tip of the injector tubes where electric field lines are concentrated.

Abstract: An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.

Abstract: Timing control resolution between two communications devices is provided by assigning each device to one of a plurality of priorities and by transmitting an identification of this priority to the other communications device. The determination of which device is the master and which device is the slave is then resolved by comparing the received and transmitted identifications from the contending devices to a predetermined ranking of identification signals. When such identifications signals are the same, each device randomly selects an identification signal from a group of such signals. Preferably this group includes all of the identification signals except that transmitted in the immediately prior contention round. The received and transmitted identifications signals from the contending devices are then compared to the predetermined ranking of identification signals.

Abstract: The Transmission Control Protocol (TCP) is a connection-oriented transport layer protocol that offers a full duplex reliable virtual circuit connection between two endpoints. Each received TCP packet in an endpoint contains both control information and data. The complexity of processing this control information in an endpoint is reduced by only periodically processing the control information. In particular, control information in received packets are not processed in an endpoint until either a) a predetermined number of packets are received, or b) a timer expires, whichever occurs first. As a result, this overall decreases the amount of processing associated with the receipt of each TCP packet and improves the performance of the TCP protocol in a high-speed packet network.