Abstract: An epitaxial wafer includes a growth substrate, a mask pattern disposed on the growth substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern and including a first void disposed on the masking region. The first void includes a lower void disposed between a lower surface of the epitaxial layer and the masking region, and an upper void extending from the lower void into the epitaxial layer, the lower void having a greater width than the upper void.

Abstract: An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.

Abstract: A photo detection package including a package body configured to have an upward opened groove unit formed in the package body, a photo detection device mounted on a bottom surface of the groove unit and electrically connected externally, and a Light-Emitting Diode (LED) mounted on an inner surface of the groove unit that is formed of an inclined surface on a periphery of the bottom surface and electrically connected externally.

Abstract: TA photo detection device, including a substrate, a band-pass filter layer formed over the substrate, a light absorption layer formed over the band-pass filter layer, a Schottky layer formed on a portion of the light absorption layer, a first electrode layer formed on a portion of the Schottky layer, and a second electrode layer formed on the light absorption layer and spaced apart from the Schottky layer.

Abstract: An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region. The epitaxial layer can be separated from the growth substrate by applying chemical lift-off or stress lift-off, at the void.

Abstract: Exemplary embodiments of the present invention relate to a photo detection device including a substrate, a first light absorption layer disposed on the substrate, a second light absorption layer disposed in a first region on the first light absorption layer, a third light absorption layer disposed in a second region on the second light absorption layer, and a first electrode layer disposed on each of the first, the second, and the third light absorption layers.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: A method of fabricating a semiconductor device, the method including: forming a first mask pattern including a masking region and an open region on a substrate; forming a sacrificial layer to cover the substrate and the first mask pattern; patterning the sacrificial layer to form a seed layer and to expose the first mask pattern; forming a second mask pattern on the exposed first mask pattern; forming an epitaxial layer on the seed layer and the second mask pattern, and forming a void between the second mask pattern and the epitaxial layer; and separating the substrate from the epitaxial layer.

Abstract: A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers.

Abstract: An ultraviolet (UV) photo-detecting device, including: a first nitride layer; a secondary light absorption layer disposed on the first nitride layer; a primary light absorption layer disposed on the secondary light absorption layer; and a Schottky junction layer disposed on the primary light absorption layer. The secondary light absorption layer includes a nitride layer having lower band-gap energy than the primary light absorption layer.

Abstract: A photo-detecting device includes a first nitride layer, a low-current blocking layer disposed on the first nitride layer, a light absorption layer disposed on the low-current blocking layer, and a Schottky junction layer disposed on the light-absorption layer. The low-current blocking layer includes a multilayer structure.

Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: TA photo detection device, including a substrate, a band-pass filter layer formed over the substrate, a light absorption layer formed over the band-pass filter layer, a Schottky layer formed on a portion of the light absorption layer, a first electrode layer formed on a portion of the Schottky layer, and a second electrode layer formed on the light absorption layer and spaced apart from the Schottky layer.

Abstract: A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

Abstract: Exemplary embodiments of the present invention relates to a light detection device including a substrate, a non-porous layer disposed on the substrate, a light absorption layer disposed on the non-porous layer, the light absorption layer including pores formed in a surface thereof, a Schottky layer disposed on the surface of the light absorption layer and in the pores, and a first electrode layer disposed on the Schottky layer.

Abstract: Exemplary embodiments of the present invention relate to a photo detection device including a substrate, a first light absorption layer disposed on the substrate, a second light absorption layer disposed in a first region on the first light absorption layer, a third light absorption layer disposed in a second region on the second light absorption layer, and a first electrode layer disposed on each of the first, the second, and the third light absorption layers.

Abstract: A method of fabricating a semiconductor device, the method including: forming a first mask pattern including a masking region and an open region on a substrate; forming a sacrificial layer to cover the substrate and the first mask pattern; patterning the sacrificial layer to form a seed layer and to expose the first mask pattern; forming a second mask pattern on the exposed first mask pattern; forming an epitaxial layer on the seed layer and the second mask pattern, and forming a void between the second mask pattern and the epitaxial layer; and separating the substrate from the epitaxial layer.

Abstract: An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region. The epitaxial layer can be separated from the growth substrate by applying chemical lift-off or stress lift-off, at the void.

Abstract: A light emitting device includes a metal backing layer, a reflective electrode layer disposed on the metal backing layer, and a plurality of nanorods disposed on the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked on the reflective electrode layer. The light emitting device further includes an anti-reflection electrode layer disposed on the nanorods, and quantum dots disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer on a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer on the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer on the nanorods.