Patents by Inventor Hwa-Mok Kim
Hwa-Mok Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140151714Abstract: Exemplary embodiments of the present invention relate to a single-crystal substrate including a buffer layer including a nitride semiconductor, holes penetrating the buffer layer, and a single-crystal nitride semiconductor disposed on the buffer layer.Type: ApplicationFiled: December 4, 2013Publication date: June 5, 2014Applicant: SEOUL VIOSYS CO., LTD.Inventors: Ki Yon PARK, Hwa Mok Kim, Daewoong Suh, Young Hwan Son
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Publication number: 20140110729Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: ApplicationFiled: December 23, 2013Publication date: April 24, 2014Applicant: Seoul Viosys Co., Ltd.Inventors: Won Cheol Seo, Joon Hee Lee, Jong Kyun You, Chang Youn Kim, Jin Cheol Shin, Hwa Mok Kim, Jang Woo Lee, Yeo Jin Yoon, Jong Kyu Kim
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Patent number: 8648369Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: GrantFiled: March 28, 2011Date of Patent: February 11, 2014Assignee: Seoul Opto Device Co., Ltd.Inventors: Won Cheol Seo, Joon Hee Lee, Jong Kyun You, Chang Youn Kim, Jin Cheul Shin, Hwa Mok Kim, Jang Woo Lee, Yeo Jin Yoon, Jong Kyu Kim
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Patent number: 8624159Abstract: An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.Type: GrantFiled: March 2, 2012Date of Patent: January 7, 2014Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hwa Mok Kim
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Patent number: 8609449Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: October 25, 2012Date of Patent: December 17, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Publication number: 20130256630Abstract: Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of 365 nm to 309 nm.Type: ApplicationFiled: March 29, 2013Publication date: October 3, 2013Applicant: Seoul Opto Device Co., Ltd.Inventors: Chang Suk HAN, Hwa Mok KIM, Hyo Shik CHOI, Mi So KO, A Ram Cha LEE
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Patent number: 8470697Abstract: A method of forming a p-type compound semiconductor layer includes increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. A source gas of a Group III element, a source gas of a p-type impurity, and a source gas of nitrogen containing hydrogen are supplied into the reaction chamber to grow the p-type compound semiconductor layer. Then, the supply of the source gas of the Group III element and the source gas of the p-type impurity is stopped and the temperature of the substrate is lowered to a second temperature. The supply of the source gas of nitrogen containing hydrogen is stopped and drawn out at the second temperature, and the temperature of the substrate is lowered to room temperature using a cooling gas. Accordingly, hydrogen is prevented from bonding to the p-type impurity in the p-type compound semiconductor layer.Type: GrantFiled: September 16, 2009Date of Patent: June 25, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Ki Bum Nam, Hwa Mok Kim, James S. Speck
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Patent number: 8329488Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: April 10, 2012Date of Patent: December 11, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Patent number: 8330173Abstract: Disclosed are a nanostructure with an indium gallium nitride quantum well and a light emitting diode employing the same. The light emitting diode comprises a substrate, a transparent electrode and an array of nanostructures interposed between the substrate and the transparent electrode. Each of the nanostructures comprises a core nanorod, and a nano shell surrounding the core nanorod. The core nanorod is formed substantially perpendicularly to the substrate and includes a first nanorod of a first conductivity type, an (AlxInyGa1-x-y)N (where, 0?x<1, 0?y?1 and 0?x+y?1) quantum well, and a second nanorod of a second conductivity type, which are joined in a longitudinal direction. The nano shell is formed of a material with a bandgap greater than that of the quantum well, and surrounds at least the quantum well of the core nanorod. Meanwhile, the second nanorods are connected in common to the transparent electrode.Type: GrantFiled: June 25, 2005Date of Patent: December 11, 2012Assignee: Seoul Opto Device Co., Ltd.Inventor: Hwa Mok Kim
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Patent number: 8288781Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: GrantFiled: September 30, 2009Date of Patent: October 16, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Won Cheol Seo, Joon Hee Lee, Jong Kyun You, Chang Youn Kim, Jin Cheul Shin, Hwa Mok Kim, Jang Woo Lee, Yeo Jin Yoon, Jong Kyu Kim
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Patent number: 8247792Abstract: A light emitting diode (LED) having a modulation doped layer. The LED comprises an n-type contact layer, a p-type contact layer and an active region of a multiple quantum well structure having an InGaN well layer. The n-type contact layer comprises a first modulation doped layer and a second modulation doped layer, each having InGaN layers doped with a high concentration of n-type impurity and low concentration of n-type impurity InGaN layers alternately laminated. The InGaN layers of the first modulation doped layer have the same composition, and the InGaN layers of the second modulation doped layer have the same composition. The second modulation doped layer is interposed between the first modulation doped layer and the active region, and an n-electrode is in contact with the first modulation doped layer. Accordingly, an increase in process time is prevented and strains induced in a multiple quantum well structure are reduced.Type: GrantFiled: May 9, 2011Date of Patent: August 21, 2012Assignee: Seoul Opto Device Co., Ltd.Inventor: Hwa Mok Kim
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Publication number: 20120202306Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: ApplicationFiled: April 10, 2012Publication date: August 9, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Shiro SAKAI, Hwa Mok KIM, Joon Hee LEE, Soo Young MOON, Kyoung Wan KIM
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Patent number: 8232562Abstract: Disclosed is a light emitting device employing nanowire phosphors. The light emitting device comprises a light emitting diode for emitting light having a first wavelength with a main peak in an ultraviolet, blue or green wavelength range; and nanowire phosphors for converting at least a portion of light having the first wavelength emitted from the light emitting diode into light with a second wavelength longer than the first wavelength. Accordingly, since the nanowire phosphors are employed, it is possible to reduce manufacturing costs of the light emitting device and to reduce light loss due to non-radiative recombination.Type: GrantFiled: August 2, 2010Date of Patent: July 31, 2012Assignee: Seoul Opto Device Co., Ltd.Inventor: Hwa-Mok Kim
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Publication number: 20120160817Abstract: An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.Type: ApplicationFiled: March 2, 2012Publication date: June 28, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Joon Hee LEE, Jong Kyun YOU, Hwa Mok KIM
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Publication number: 20120132888Abstract: A light emitting device includes a metal backing layer, a reflective electrode layer disposed on the metal backing layer, and a plurality of nanorods disposed on the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked on the reflective electrode layer. The light emitting device further includes an anti-reflection electrode layer disposed on the nanorods, and quantum dots disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer on a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer on the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer on the nanorods.Type: ApplicationFiled: November 28, 2011Publication date: May 31, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Woo Chul KWAK, Soon Ho AN, Hwa Mok KIM, Eun Jin KIM, Jae Hoon SONG
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Patent number: 8183075Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: July 21, 2011Date of Patent: May 22, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Patent number: 8153509Abstract: Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from cracking or fracture. The laser lift-off process is performed by a laser lift-off apparatus including a heater.Type: GrantFiled: January 26, 2010Date of Patent: April 10, 2012Assignee: Seoul Opto Device Co., ltd.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hwa Mok Kim
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Publication number: 20120021546Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: ApplicationFiled: July 21, 2011Publication date: January 26, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Publication number: 20120007109Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: ApplicationFiled: September 20, 2011Publication date: January 12, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Won Cheol SEO, Joon Hee LEE, Jong Kyun YOU, Chang Youn KIM, Jin Cheul SHIN, Hwa Mok KIM, Jang Woo LEE, Yeo Jin YOON, Jong Kyu KIM
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Publication number: 20110316026Abstract: An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.Type: ApplicationFiled: May 2, 2011Publication date: December 29, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Joon Hee LEE, Jong Kyun YOU, Hong Chol LIM, Hwa Mok KIM