Abstract: A semiconductor device includes a main active region provided in a semiconductor substrate and having a first side surface and a second side surface facing each other. A first auxiliary active region adjacent the first side surface of the main active region and spaced apart from the main active region by a first distance is provided. A second auxiliary active region adjacent the second side surface of the main active region and spaced apart from the main active region by the first distance is provided. A first conductive pattern crosses the main active region and includes first and second side portions facing each other. The first side portion of the conductive pattern is disposed between the first auxiliary active region and the main active region, and the second side portion of the conductive pattern is disposed between the second auxiliary active region and the main active region.

Abstract: Provided is a programmable circuit. The programmable circuit includes a first path and a second path connected in parallel between a first voltage node and a second voltage node. The first path includes a first programmable element, a first node, a first pull-up transistor, a second node, and a first pull-down transistor connected in series between the first voltage node and the second voltage node. The second path includes a second programmable element, a third node, a second pull-up transistor, a fourth node, and a second pull-down transistor connected in series between the first and second voltage nodes. A gate electrode of the first pull-up transistor, a gate electrode of the first pull-down transistor, and the fourth node are electrically connected to one another. A gate electrode of the second pull-up transistor, a gate electrode of the second pull-down transistor, and the second node are electrically connected to one another.

Abstract: A capacitor device includes a substrate including a first well having a first conductivity type and a first voltage applied thereto and a second well having a second conductivity type and a second voltage applied thereto; and a gate electrode disposed on an upper portion of the first well or an upper portion of the second well in such a way that the gate electrode is insulated from the first well or the second well, wherein capacitances of the capacitor device include a first capacitance between the first well and the second well and a second capacitance between the first well or the second well and the gate electrode.

Abstract: Provided are a method of fabricating a semiconductor device having different kinds of capacitors, and a semiconductor device formed using the same. In a fabrication process, after preparing a substrate including a storage capacitor region and a higher voltage resistance capacitor region, a lower electrode layer may be formed on the storage capacitor region and the higher voltage resistance capacitor region. A first dielectric film may be formed on the lower electrode layer, and the first dielectric film of the storage capacitor region may be selectively removed to expose the lower electrode layer of the storage capacitor region. After forming a second dielectric film on the first dielectric film and the exposed lower electrode layer of the storage capacitor region, an upper electrode layer may be formed on the second dielectric film.

Abstract: A semiconductor device includes a main active region provided in a semiconductor substrate and having a first side surface and a second side surface facing each other. A first auxiliary active region adjacent the first side surface of the main active region and spaced apart from the main active region by a first distance is provided. A second auxiliary active region adjacent the second side surface of the main active region and spaced apart from the main active region by the first distance is provided. A first conductive pattern crosses the main active region and includes first and second side portions facing each other. The first side portion of the conductive pattern is disposed between the first auxiliary active region and the main active region, and the second side portion of the conductive pattern is disposed between the second auxiliary active region and the main active region.

Abstract: Provided is a programmable circuit. The programmable circuit includes a first path and a second path connected in parallel between a first voltage node and a second voltage node. The first path includes a first programmable element, a first node, a first pull-up transistor, a second node, and a first pull-down transistor connected in series between the first voltage node and the second voltage node. The second path includes a second programmable element, a third node, a second pull-up transistor, a fourth node, and a second pull-down transistor connected in series between the first and second voltage nodes. A gate electrode of the first pull-up transistor, a gate electrode of the first pull-down transistor, and the fourth node are electrically connected to one another. A gate electrode of the second pull-up transistor, a gate electrode of the second pull-down transistor, and the second node are electrically connected to one another.

Abstract: A capacitor device includes a substrate including a first well having a first conductivity type and a first voltage applied thereto and a second well having a second conductivity type and a second voltage applied thereto; and a gate electrode disposed on an upper portion of the first well or an upper portion of the second well in such a way that the gate electrode is insulated from the first well or the second well, wherein capacitances of the capacitor device include a first capacitance between the first well and the second well and a second capacitance between the first well or the second well and the gate electrode.

Abstract: Provided are a method of fabricating a semiconductor device having different kinds of capacitors, and a semiconductor device formed using the same. In a fabrication process, after preparing a substrate including a storage capacitor region and a higher voltage resistance capacitor region, a lower electrode layer may be formed on the storage capacitor region and the higher voltage resistance capacitor region. A first dielectric film may be formed on the lower electrode layer, and the first dielectric film of the storage capacitor region may be selectively removed to expose the lower electrode layer of the storage capacitor region. After forming a second dielectric film on the first dielectric film and the exposed lower electrode layer of the storage capacitor region, an upper electrode layer may be formed on the second dielectric film.

Abstract: Provided are a method of fabricating a semiconductor device having different kinds of capacitors, and a semiconductor device formed using the same. In a fabrication process, after preparing a substrate including a storage capacitor region and a higher voltage resistance capacitor region, a lower electrode layer may be formed on the storage capacitor region and the higher voltage resistance capacitor region. A first dielectric film may be formed on the lower electrode layer, and the first dielectric film of the storage capacitor region may be selectively removed to expose the lower electrode layer of the storage capacitor region. After forming a second dielectric film on the first dielectric film and the exposed lower electrode layer of the storage capacitor region, an upper electrode layer may be formed on the second dielectric film.

Abstract: In a HV transistor having a high breakdown voltage and a method of manufacturing the same, a first insulation pattern is formed on a semiconductor substrate by oxidizing a portion of the substrate, and a second insulation pattern is formed such that at least a portion of the first insulation pattern is covered with the second insulation pattern. A gate electrode including a first end portion and a second end portion opposite to the first end portion is formed on the substrate by depositing conductive materials onto the substrate. The first end portion is formed on the first insulation pattern and the second end portion is formed on the second insulation pattern. Source/drain regions are formed at surface portions of the substrate by implanting impurities onto the substrate. Electric field intensity at an edge portion of the gate electrode is reduced, and the HV transistor has a high breakdown voltage.

Abstract: In a semiconductor device having a dual isolation structure, and a method of fabricating the same, an epitaxial layer is formed on the entire surface of the semiconductor device. A device region including the semiconductor device and the epitaxial layer is defined by a device isolation layer. The device isolation layer has a dual structure that includes a diffused isolation layer and a trench isolation layer. The diffused isolation layer is formed in the semiconductor substrate, and surrounds the base and the bottom sidewall of the device region, and the trench isolation layer surrounds the upper sidewall of the device region by vertically penetrating the epitaxial layer.

Abstract: A MOS transistor can include a substrate and a field region formed at the semiconductor substrate to define an active region. An I-shaped spacer is on sidewalls of the gate electrode. A lightly doped region and a heavily doped region are on the semiconductor substrate on sides of the gate electrode. A first silicide layer is on a surface of the heavily doped region and a second silicide layer is on the lightly doped region between the I-shaped spacer and the first silicide layer.

Abstract: Provided are a method of fabricating a semiconductor device having different kinds of capacitors, and a semiconductor device formed using the same. In a fabrication process, after preparing a substrate including a storage capacitor region and a higher voltage resistance capacitor region, a lower electrode layer may be formed on the storage capacitor region and the higher voltage resistance capacitor region. A first dielectric film may be formed on the lower electrode layer, and the first dielectric film of the storage capacitor region may be selectively removed to expose the lower electrode layer of the storage capacitor region. After forming a second dielectric film on the first dielectric film and the exposed lower electrode layer of the storage capacitor region, an upper electrode layer may be formed on the second dielectric film.

Abstract: Methods of forming MOS transistors include forming lightly and heavily doped source/drain regions adjacent to one another in a substrate and a gate electrode with a sidewall spacer thereon. A salicide process is performed on a surface of the heavily doped source/drain region to provide a first suicide layer self-aligned to the sidewall spacer. At least a portion of the sidewall spacer is removed to expose a portion of the lightly doped source/drain region adjacent to the first silicide layer. A salicide process in performed on the exposed portion of the lightly doped source/drain region to provide a second silicide layer adjacent to the first suicide layer. Related devices are also disclosed.

Abstract: In a HV transistor having a high breakdown voltage and a method of manufacturing the same, a first insulation pattern is formed on a semiconductor substrate by oxidizing a portion of the substrate, and a second insulation pattern is formed such that at least a portion of the first insulation pattern is covered with the second insulation pattern. A gate electrode including a first end portion and a second end portion opposite to the first end portion is formed on the substrate by depositing conductive materials onto the substrate. The first end portion is formed on the first insulation pattern and the second end portion is formed on the second insulation pattern. Source/drain regions are formed at surface portions of the substrate by implanting impurities onto the substrate. Electric field intensity at an edge portion of the gate electrode is reduced, and the HV transistor has a high breakdown voltage.

Abstract: In a semiconductor device having a dual isolation structure, and a method of fabricating the same, an epitaxial layer is formed on the entire surface of the semiconductor device. A device region including the semiconductor device and the epitaxial layer is defined by a device isolation layer. The device isolation layer has a dual structure that includes a diffused isolation layer and a trench isolation layer. The diffused isolation layer is formed in the semiconductor substrate, and surrounds the base and the bottom sidewall of the device region, and the trench isolation layer surrounds the upper sidewall of the device region by vertically penetrating the epitaxial layer.

Abstract: In a semiconductor device having a dual isolation structure, and a method of fabricating the same, an epitaxial layer is formed on the entire surface of the semiconductor device. A device region including the semiconductor device and the epitaxial layer is defined by a device isolation layer. The device isolation layer has a dual structure that includes a diffused isolation layer and a trench isolation layer. The diffused isolation layer is formed in the semiconductor substrate, and surrounds the base and the bottom sidewall of the device region, and the trench isolation layer surrounds the upper sidewall of the device region by vertically penetrating the epitaxial layer.

Abstract: A method of manufacturing a semiconductor device, such as a double-diffused metal oxide semiconductor (DMOS) transistor, where a first layer may be formed on a semiconductor substrate, with isolation trenches formed in the first layer and semiconductor substrate, and with the trenches being filled with an isolation layer. A second layer may be formed on the first layer and semiconductor substrate, and a plurality of drain trenches may be formed therein. A pair of plug-type drains may be formed in the trenches, to be separated from the isolation layer by a dielectric spacer. Gates and source areas may be formed on a resultant structure containing the plug-type drains. Accordingly, current may be increased with a reduction in drain-source on resistance, and an area of the isolation layer can be reduced, as compared to an existing isolation layer, potentially resulting in a reduction in chip area.

Abstract: A method of manufacturing a semiconductor device, such as a double-diffused metal oxide semiconductor (DMOS) transistor, where a first layer may be formed on a semiconductor substrate, with isolation trenches formed in the first layer and semiconductor substrate, and with the trenches being filled with an isolation layer. A second layer may be formed on the first layer and semiconductor substrate, and a plurality of drain trenches may be formed therein. A pair of plug-type drains may be formed in the trenches, to be separated from the isolation layer by a dielectric spacer. Gates and source areas may be formed on a resultant structure containing the plug-type drains. Accordingly, current may be increased with a reduction in drain-source on resistance, and an area of the isolation layer can be reduced, as compared to an existing isolation layer, potentially resulting in a reduction in chip area.

Abstract: Semiconductor devices with a multiple isolation structure and methods for fabricating the same are provided. In one aspect, a semiconductor device comprises a heavily doped buried layer having a first conductivity type, which is formed in a predetermined region of a semiconductor substrate, and an epitaxial layer having the first conductivity type, which covers an entire surface of the semiconductor substrate. A device isolation structure is disposed such that the device isolation structure penetrates the epitaxial layer and a portion of the semiconductor substrate to define a device region. The device isolation structure includes an upper isolation structure penetrating an epitaxial layer as well as a lower isolation structure formed in the semiconductor substrate under the upper isolation structure.