Abstract: The present technology relates to a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a stack with a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on a substrate, and a plurality of channel structures passing through the stack in a vertical direction. Each of the plurality of channel structures includes a core insulating layer, a channel layer, a tunnel insulating layer, and a charge storage layer that vertically extend in the same direction as the plurality of channel structures, and a dielectric constant of a partial region of the core insulating layer is lower than a dielectric constant of another region of the core insulating layer.

Abstract: An embodiment method for operating a vehicle includes monitoring a state of the vehicle, determining a type of an emergency stop from a plurality of types of emergency stops based on the state of the vehicle, and executing the determined type of the emergency stop. An embodiment vehicle includes sensors, a processor configured to control automated driving of the vehicle based on state information of components of the vehicle and surrounding environment information of the vehicle detected by the sensors, and a controller configured to control an operation of the vehicle based on a control of the processor, wherein the processor is further configured to monitor a state of the vehicle, determine a type of an emergency stop from a plurality of types of emergency stops based on the state of the vehicle, and execute the determined type of the emergency stop by controlling the controller.

Abstract: A method of manufacturing a semiconductor device may include forming a stack with alternately stacked first material layers and second material layers, forming an opening passing through the stack, forming a memory layer in the opening, forming a slit passing through the stack and exposing the first material layers and the second material layers, and forming first barrier patterns, without removing the second material layers, by partially oxidizing the memory layer through the second material layers.

Abstract: A vehicle control apparatus is provided. The vehicle control apparatus comprising: a reception unit for recognizing a plurality of events comprising a first event and a second event, and receiving information of the plurality of events and information comprising a set speed of a vehicle and a current speed of the vehicle; a determination unit for determining whether a control starting condition is satisfied; a calculation unit for calculating a reference distance for control, calculating a target speed using the reference distance for control, and modifying the target speed; and a vehicle control unit for performing control comprising acceleration and deceleration so that the vehicle travels at the target speed when the control starting condition is satisfied.

Abstract: The present invention discloses a back contact solar cell. The back contact solar cell includes a semiconductor substrate having a front surface and a rear surface; a first conductive type semiconductor region having a first conductive type and a second conductive type semiconductor region having a second conductive type at an interval on the rear surface of the semiconductor substrate. Furthermore, the rear surface of the semiconductor substrate has a texturing structure at the interval between the first conductive type semiconductor region and the second conductive type semiconductor region.

Abstract: A method of manufacturing a semiconductor device may include forming a stack with alternately stacked first material layers and second material layers, forming an opening passing through the stack, forming a memory layer in the opening, forming a slit passing through the stack and exposing the first material layers and the second material layers, and forming first barrier patterns, without removing the second material layers, by partially oxidizing the memory layer through the second material layers.

Abstract: An apparatus and a method for controlling a vehicle sound are provided. The apparatus a detection device that detects driving information and drive mode setting information and a processing device electrically connected with the detection device. The processing device determines an emotional state of a driver based on at least one of the driving information or the drive mode setting information, determines a sound concept depending on the emotional state of the driver, and controls a vehicle sound depending on the sound concept.

Abstract: The present invention discloses a back contact solar cell. The back contact solar cell includes a semiconductor substrate having a front surface and a rear surface; a first conductive type semiconductor region having a first conductive type and a second conductive type semiconductor region having a second conductive type at an interval on the rear surface of the semiconductor substrate. Furthermore, the rear surface of the semiconductor substrate has a texturing structure at the interval between the first conductive type semiconductor region and the second conductive type semiconductor region.

Abstract: A memory system and a method of operating the memory system are provided. The memory system includes a plurality of semiconductor memory devices each of which includes a plurality of memory blocks. The memory system also includes a controller configured to control the plurality of semiconductor memory devices to perform a program operation, a read operation, and an operation of removing a hole in a space region on a target memory block of the plurality of memory blocks. The controller controls the plurality of semiconductor memory devices to perform the operation of removing the hole in the space region on the target memory block when an erase count of the target memory block of the plurality of memory blocks is greater than a set value.

Abstract: The present disclosure provides an object cutting device for manufacturing a composite material including an arrangement unit configured to support an object at both sides, an upper cutting unit including an upper cutter configured to cut the object at an upper side, a lower cutting unit including a lower cutter configured to cut the object a lower side, and a collection unit configured to collect cut objects. According to embodiments of the present disclosure, it is possible to wind and unwind a connected object or positionally move an end thereof to prevent a reduction in a tensile force, thereby easily acquiring an object that is cut into more uniform lengths and enabling the mass production of the object.

Abstract: A method for fabricating a semiconductor memory device may include the steps of: forming a stacked body on a source layer by alternately stacking a plurality of interlayer dielectric layers and a plurality of gate sacrificial layers; forming a plurality of channel holes through the stacked body, the channel holes each having a lower end extended into the source layer; forming a channel layer along the surfaces of the channel holes, the channel layer including a first region formed in the stacked body and a second region formed in the source layer; and forming a channel passivation layer in the first region to scale down the thickness of the channel layer of the first region.

Abstract: An apparatus and a method for caring emotion of a driver based on a vehicle sound, may include a detector configured to detect driving information of the vehicle and body information of a user, a non-transitory storage to store instructions, and a processor to execute the instructions. The processor determines an emotional status of the driver by use of at least one of the driving information or the body information, to generate a healing sound by designing a virtual sound based on the driving information and the emotional status of the driver, and to generate and output the healing sound.

Abstract: A memory device performs a detrap operation on a selected memory block when the number of program/erase cycles of the selected memory block equals or exceeds a predetermined set number. A circuit included in the memory device applies a heating current to a heating layer, thermally coupled to the channel of each of the plurality of strings included in the selected memory block in the detrap operation.

Abstract: The present invention discloses a back contact solar cell. The back contact solar cell includes a semiconductor substrate having a front surface and a rear surface; a first conductive type semiconductor region having a first conductive type and a second conductive type semiconductor region having a second conductive type at an interval on the rear surface of the semiconductor substrate. Furthermore, the rear surface of the semiconductor substrate has a texturing structure at the interval between the first conductive type semiconductor region and the second conductive type semiconductor region.

Abstract: Disclosed herein is an elevator landing control system according to various embodiments of the present disclosure for achieving the above-described objects. The elevator landing control system includes an upper frame provided in an upward direction of a cage and provided with a main rope connected thereto, a position adjusting device connecting the cage and the upper frame, and a sensor device configured to detect a landing error between a floor of the cage and a floor of a platform, wherein the position adjusting device may adjust a distance between the upper frame and the cage based on the landing error detected from the sensor device to correct a height of the cage.

Abstract: A method of manufacturing a semiconductor device may include forming a stack with alternately stacked first material layers and second material layers, forming an opening passing through the stack, forming a memory layer in the opening, forming a slit passing through the stack and exposing the first material layers and the second material layers, and forming first barrier patterns, without removing the second material layers, by partially oxidizing the memory layer through the second material layers.

Abstract: A semiconductor memory device may include a core pillar extended in a vertical direction, a channel layer having a first region covering a portion of a side surface of the core pillar and a second region covering the other portion of the side surface of the core pillar and a bottom surface of the core pillar, the second region abutting the first region, and a channel passivation layer formed in the first region of the channel layer and abutting the core pillar.

Abstract: The present technology relates to a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a stack with a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on a substrate, and a plurality of channel structures passing through the stack in a vertical direction. Each of the plurality of channel structures includes a core insulating layer, a channel layer, a tunnel insulating layer, and a charge storage layer that vertically extend in the same direction as the plurality of channel structures, and a dielectric constant of a partial region of the core insulating layer is lower than a dielectric constant of another region of the core insulating layer.