Abstract: The present disclosure relates to a display device including a display panel on which an image is displayed, a polarizer disposed on the display panel, a lower fluorescent filter disposed on the polarizer, and an upper fluorescent filter disposed on the lower fluorescent filter. The present disclosure may improve visibility when an image is displayed on the display device and light of a laser pointer in a visible light region is emitted thereto by absorbing the light using the upper and lower fluorescent filters, converting the light into light in a long wavelength band, which is a higher wavelength band than that of the absorbed light, and emitting the light in the long wavelength band.

Abstract: A metal-containing film is formed on a silicon-containing conductive region at a temperature where the metal of the metal-containing film and silicon of the semiconductor substrate react with each other to form a diffusion restraint interface film interposed between the metal-containing film and silicon of the and the semiconductor substrate. The resultant structure is annealed so that metal of the metal-containing film and silicon of the silicon-containing conductive region react with each other to form a metal silicide film.

Abstract: A cobalt-containing film on a silicon-containing conductive region, and a titanium-rich capping layer is formed on cobalt-containing film. The atomic % ratio of titanium to other elements (if any) in the titanium-rich capping layer is more than one (1). The resultant structure is annealed so that cobalt of the cobalt-containing film and silicon of the silicon-containing conductive region react with each other to form a cobalt silicide film. When the formation of the cobalt-containing film is carried out at a high temperature, a diffusion restraint interface film is also formed.

Abstract: A cobalt-containing film on a silicon-containing conductive region, and a titanium-rich capping layer is formed on cobalt-containing film. The atomic % ratio of titanium to other elements (if any) in the titanium-rich capping layer is more than one (1). The resultant structure is annealed so that cobalt of the cobalt-containing film and silicon of the silicon-containing conductive region react with each other to form a cobalt silicide film. When the formation of the cobalt-containing film is carried out at a high temperature, a diffusion restraint interface film is also formed.

Abstract: The method of fabricating a semiconductor device through a salicide process includes the steps of forming a gate electrode and source/drain regions on a semiconductor substrate, and performing only a wet etching; sequentially, entirely, forming a high melting point metal film and a capping film; forming a mono silicide film on the gate electrode and the source/drain regions through a first heat process, and removing the high melting point metal film and the capping film of a region excepting of a region where the mono silicide film is formed; and forming the di-silicide film through a second heat process.