Abstract: The present invention relates to novel Forms A, B, C, D, E, F and G of crystalline 9-[2-[phosphonomethoxy]ethyl]adenine bis-pivaloyloxymethyl ester, i.e., adefovir dipivoxil, and processes for preparing them. According to the present invention, said novel crystal forms having a high purity can be obtained by a simple method and in a high yield.

Abstract: A phase change memory device performs a program operation by receiving program data to be programmed in selected memory cells, sensing read data already stored in the selected memory cells by detecting respective magnitudes of verify currents flowing through the selected memory cells when a verify read voltage is applied to the selected memory cells, determining whether the read data is identical to the program data, and upon determining that the program data for one or more of the selected memory cells is not identical to the corresponding read data, programming the one or more selected memory cells with the program data.

Abstract: A semiconductor package having a solder ball having a double connection structure which reduces a total height of a package on package (POP). The semiconductor package includes a first semiconductor package in which a semiconductor device is mounted on a lower surface of a first substrate, and a through hole is formed in a solder ball pad region of the first substrate, a second semiconductor package in which a semiconductor device is mounted on an upper surface of a second substrate, and a solder ball pad of the second substrate is formed to correspond to the through hole of the first substrate and is mounted on the first substrate, and a common solder ball that is disposed below the first substrate and is connected to the solder ball pad of the second substrate through the through hole.

Abstract: A method programs a phase change memory device. The method comprises receiving program data for selected memory cells; generating bias voltages based on reference cells; sensing read data stored in a selected memory cell by supplying the selected memory cell with verification currents determined by the bias voltages; determining whether the read data is identical to the program data; and upon determining that the program data for one or more of the selected memory cells is not identical to the corresponding read data, iteratively applying a write current to the one or more selected memory cells.

Abstract: Provided is a method for producing a cloned dog by enucleating an oocyte of a dog to produce an enucleated oocyte, transferring a somatic cell of the dog into the enucleated oocyte, carrying out electrofusion under optimized conditions to produce a nuclear transfer embryo, and transferring the nuclear transfer embryo into its surrogate mother.

Abstract: An apparatus, system, and method for providing augmented reality (AR) information of a concealed object are disclosed. The method for providing AR information of a concealed object by a terminal connectable to a server via a wired and/or wireless communication network may include acquiring an image of a real environment; defining a reference object included in the acquired image; obtaining image capturing position information about a position of the image and reference object recognition information of the defined reference object; transmitting the obtained image capturing position information and the reference object recognition information to the server; receiving information about concealed objects from the server, the concealed objects being disposed behind the reference object along or about a direction from the image capturing position to the reference object; and outputting the received information about concealed objects.

Abstract: A method of writing data in a phase change memory includes receiving write data to be written to a selected phase change memory cell in the plurality of phase change memory cells, sensing data stored in the selected phase change memory cell, determining whether or not the sensed data is equal to the write data, and if the sensed data is not equal to the write data, iteratively applying a write current to the selected phase change memory cell, wherein a resistance state of the phase change memory cell is changed by heat corresponding to a level of the write current, and the level of the write current is changed between successive iterative applications.

Abstract: A piezoelectric microphone, a speaker, a microphone-speaker integrated device and a manufacturing method thereof are provided. The microphone-speaker integrated device includes a silicon substrate and an insulating layer deposited on the silicon substrate; a piezoelectric plate formed on the insulating layer; and a mating electrode formed on the piezoelectric plate. The mating electrode is patterned with a polarity arrayed in series.

Abstract: A nonvolatile memory device may include a memory cell array with a plurality of nonvolatile memory cells arranged in an array of rows and columns. Each of a plurality of bit lines may be coupled to nonvolatile memory cells in a respective one of the columns of the array, and each of a plurality of column selection switches may be coupled to a respective one of the bit lines. A column decoder may be coupled to the plurality of column selection switches, and the column decoder may be configured to select a first one of the bit lines using a first column selection signal having a first signal level applied to a first one of the column selection switches. The column decoder may be further configured to select a second one of the bit lines using a second column selection signal having a second signal level applied to a second one of the column selection switches with the second signal level being different than the first signal level.

Abstract: The present invention relates to a method for setting a compensation region for an irregular defect region in an image display device, including the steps of detecting an irregular display defect, setting a horizontal width of the irregular defect region detected thus, generating a plurality of guide lines which divide the irregular defect region in a horizontal direction along the horizontal width set thus automatically, setting upper and lower side boundary lines to the irregular defect region at every interval of the plurality of the guide lines to generate a plurality of main compensation regions defined by the plurality of guide lines and the upper and lower side boundary lines, and generating a plurality of upper, lower, left, and right supplementary compensation regions at upper, lower, left, and right sides of the plurality of main compensation regions, which maintain a gap of each of the plurality of the guide lines, automatically.

Abstract: A nonvolatile memory device and a method of driving the same are provided, which adopt an improved write operation. The method of driving a nonvolatile memory device includes providing the nonvolatile memory device including a plurality of memory banks each having a plurality of local bit lines and a plurality of variable resistance memory cells; selectively connecting read global bit lines for reading data with the local bit lines, and firstly discharging the selectively connected local bit lines by turning on local bit line discharge transistors coupled to the read global bit lines; and selectively connecting write global bit lines for writing data with the local bit lines, and secondly discharging the selectively connected local bit lines by turning on global bit line discharge transistors.

Abstract: Provided is a method for measuring environmental parameters for multi-modal fusion. The method for measuring environmental parameters for multi-modal fusion, includes: preparing at least one enrolled modality; receiving at least one input modality; calculating image related environmental parameters of input images in at least one input modality based on illumination of enrolled image in at least one enrolled modality; and comparing the image related environmental parameters with a predetermined reference value and discarding the input image or outputting it as a recognition data according to the comparison result.

Abstract: A memory device includes a memory array having a plurality of rows and columns of nonvolatile memory cells (e.g., PRAM cells) therein and a first plurality of local bit lines electrically coupled to a corresponding first plurality of columns of memory cells in the memory array. A first plurality of bit line selection circuits are also provided, which are responsive to bit line selection signals. A first plurality of bit line discharge circuits are electrically connected to respective ones of the first plurality of local bit lines. A bit line discharge control circuit is provided to drive the first plurality of bit line discharge circuits with equivalent bit line discharge signals during an operation to read data from a selected one of the first plurality of local bit lines.

Abstract: Provided is a forced acoustic dipole capable of regulating phases and acoustic pressures of first and second acoustic signals output from first and second pole speakers to freely steer the direction of an acoustic lobe. In addition, a forced acoustic multipole array is constituted by a plurality of forced acoustic dipoles. When the phases and acoustic pressures of the first and second acoustic signals output from the forced acoustic dipoles are regulated to steer an acoustic lobe in a specific direction, sound can be heard from a desired direction only without disturbing others.

Abstract: A semiconductor package structure having a solder ball coupled to a chip pad and a manufacturing method thereof, a semiconductor package module, and a system. A circuit board includes a through hole therein, and a conductor is formed on a sidewall of the through hole. A first semiconductor chip including a first chip pad is mounted on the circuit board. A solder ball is disposed in the through hole and is bonded to the conductor and the first chip pad. Therefore, an underfill can be removed from a semiconductor package, and thus, the semiconductor package can be reduced in thickness.

Abstract: A resistance-change random access memory device includes a resistance-change memory cell array having a plurality of resistance-change memory cells, where a plurality of word lines are connected to respective first terminals of the plurality of resistance-change memory cells. A plurality of bit lines are disposed perpendicular to the word lines and connected to respective second terminals of the plurality of resistance-change memory cells. The device also includes a plurality of discharge elements that are capable of connecting or disconnecting respective bit lines from a discharge voltage, where the discharge elements connect the respective bit lines to the discharge voltage before write and read operations.

Abstract: Disclosed herein is a novel gluconacetobacter strain having cellulose producing activity. Specifically, the present invention relates to a novel gluconacetobacter strain producing nano-structured cellulose in a highly efficient manner. The cellulose produced by the strain, due to its superb thermodynamic properties, can be characterized as nano-structured bacterial cellulose and therefore utilized as a bio-nano-fiber. Particularly, the cellulose can be impregnated with a resin to form a cellulose-based resin which can be effectively adapted for a substrate for a liquid crystal display (LCD).

Abstract: The present invention relates to an antitumor immune response, and in more detail, to a method for inducing cytotoxic T lymphocytes specific to a tumor-associated antigen that acts specifically on tumor cells. Immunotherapy using the present invention may be most effective among immune therapies that use immunity of our body, because in the present invention, CEA-specific cytotoxic T lymphocytes can be induced in vitro by using a dendritic cell transduced with a recombinant adenovirus. Further, immunotherapy using the present invention can function as a powerful tool for tumor prevention or treatment, if being used in combination with antitumor vaccines or other treatments.

Abstract: A method and apparatus for recognizing a gesture in an image processing system. In the apparatus, an input unit receives an image obtained by capturing a gesture of a user using a camera. A detector detects a face area in the input image, and detects a hand area in gesture search areas. The gesture search areas being set by dividing the image into predetermined areas with reference to a predetermined location of the detected face area. A controller sets the gesture search areas, determines whether a gesture occurs in the detected hand area, and selects a detection area with respect to the gesture to generate a control command for controlling an image device. A calculator calculates skin-color information and differential-area information for checking a gesture in the detected hand area. Accordingly, a hand area can be accurately detected, and a gesture can be separated from peripheral movement information, so that mal-functioning caused by gesture recognition can be reduced.

Abstract: A method of operating a phase change random access memory (PRAM) device includes performing a program operation to store data in selected PRAM cells of the device, wherein the program operation comprises a plurality of sequential program loops. The method further comprises suspending the program operation in the middle of the program operation, and after suspending the program operation, resuming the program operation in response to a resume command.