Abstract: In a method of manufacturing a semiconductor device, a semiconductor substrate is prepared. Boron-containing ions are generated by reacting a borane-based compound and a halogen-containing source with each other. The borane-based compound includes boron having a mass number of 11 (11B). The boron-containing ions are implanted into the semiconductor substrate to form an impurity region.

Abstract: In a method of manufacturing a semiconductor device, a semiconductor substrate is prepared. Boron-containing ions are generated by reacting a borane-based compound and a halogen-containing source with each other. The borane-based compound includes boron having a mass number of 11 (11B). The boron-containing ions are implanted into the semiconductor substrate to form an impurity region.

Abstract: A composition for copper plating and associated methods, a method of forming a copper wiring including forming an insulation layer having a recessed portion on a substrate, and forming a copper layer on the insulation layer to fill the recessed portion by performing an electroplating process using a composition that includes an aqueous electrolyte solution containing a copper ion and at least one of a disulfide compound represented by Formula 1, a betaine compound represented by at least one of Formulae 3 and 4, and a triblock copolymer of polyethylene oxide-polypropylene oxide-polyethylene oxide (PEO-PPO-PEO) having a weight average molecular weight of about 2,500 to about 5,000 g/mol and an ethylene oxide content (EO %, w/w) of about 30% to about 60%.