Abstract: A stack type semiconductor memory device may include a first structure and a second structure. The first structure may include a first substrate, a capacitor array and a first bonding layer. The first substrate may have an upper surface and a lower surface. The capacitor array may include a plurality of capacitors integrated on the upper surface of the first substrate. The first bonding layer may be formed on the capacitor array. The second structure may include a second substrate, an access array and a second bonding layer. The second substrate may have an upper surface and a lower surface. The access array may include a plurality of access transistors integrated on the upper surface of the second substrate. The second bonding layer may be formed on the lower surface of the second substrate. The second bonding layer may be hybrid-bonded to the first bonding layer.

Abstract: Provided is a method for not only reducing peeling in a post-process of a common layer (HTL) but also increasing display reliability and lifespan by implementing a colored pattern having a constant roughness value on an electrode substrate, wherein the method is also for ensuring vivid colors and increasing display reliability and lifespan by implementing a colored pattern having a low moisture content on an electrode substrate, thereby minimizing the generation of moisture in the panel state.

Abstract: Provided is a method for ensuring vivid colors and increasing display reliability and lifespan by implementing a colored pattern with high optical density on an electrode substrate, where the method uses a pigment dispersion in which a pigment having a size of 100 nm or less is used in order to increase the optical density and reduce roughness after completing the post-heat treatment process by including a colorant according to the present disclosure, and the method can minimize the reduction in the lifespan due to moisture in the panel state by minimizing the moisture content after completing the post-heat treatment process.

Abstract: Provided is a single process of performing coating; prebaking; exposure; and development for implementing a coloring pattern capable of reducing the process time on an electrode substrate by integrating the two processes of layers of PDL and CS of an organic light-emitting diode panel into one, which can reduce scratches caused by a metal mask during deposition by managing the half-tone thickness to 1.25 to 2.20 ?m and the full-tone thickness to be 3.20 to 3.40 ?m, and form a pattern by adjusting the UV active line transmittance of the photomask to three sections of 0% (non-exposed portion), 15 to 60% (half-tone), and 100% (full-tone), creating a step height of the pattern after the development process is completed, while including a coloring agent.

Abstract: An object of the present disclosure is to implement a coloring pattern with a constant illuminance value on an electrode substrate to thereby increase display reliability and lifetime while reducing delamination of the hole transport layer (HTL) in the post-process. That is, when the roughness of the pattern after post-baking treatment is low, it may cause delamination of the hole transport layer (HTL) and a decrease in lifetime due to defective pixels, and thus a certain roughness can be obtained by minimizing the surface flow by leaving the substrate at a high temperature during post-baking treatment according to the present disclosure.

Abstract: An object of the present disclosure is to implement a coloring pattem with a constant illuminance value on an electrode substrate to thereby increase display reliability and lifetime while reducing delamination of the hole transport layer (HTL) in the post-process. That is, when the roughness of the pattern after post-baking treatment is low, it may cause delamination of the hole transport layer (HTL) and a decrease in lifetime due to defective pixels, and thus a certain roughness can be obtained by minimizing the surface flow by leaving the substrate at a high temperature during post-baking treatment according to the present disclosure.

Abstract: An object of the present disclosure is to implement a coloring pattern with a high optical density on an electrode substrate to improve display reliability and lifetime as well as vivid colors as a display with high resolution. That is, the pixel having a size within the range according to the present disclosure can implement high resolution of a Black PDL and can manufacture a display with high luminance and long lifetime according to driving voltage and current.

Abstract: An object of the present disclosure is to implement a coloring pattern with a high optical density on an electrode substrate to improve display reliability and lifetime of a display as well as vivid colors. That is, the present disclosure relates to a composition and a method that can form the pattern of a pixel defining layer that can improve visibility and contrast by satisfying the optical density of 0.80/?m to 1.5/?m in the panel after post-baking treatment.

Abstract: A semiconductor device may include: a substrate including a peripheral circuit region and a cell region having a first cell region and a second cell region, the second cell region being farther from the peripheral circuit region than the first cell region; a plurality of memory cells disposed at intersection regions between first conductive lines and second conductive lines, respectively, the memory cells including a first memory cell disposed in the first cell region and a second memory cell disposed in the second cell region, wherein a first electrode layer of the first memory cell and a second electrode layer of the second memory cell include a conductive material, and wherein the first electrode layer further includes a first dopant that increases a resistivity of the conductive material.

Abstract: Provided are a photosensitive composition for forming a light shielding layer of an organic light emitting display device, which includes (A) an alkali soluble resin including a repeating unit represented by Formula (1); (B) a reactive unsaturated compound; (C) a photoinitiator; (D) a black colorant; (E) a hollow silica particle; and (F) a solvent, a light shielding layer of an organic light emitting display device including the composition with excellent resolution while simultaneously implementing light shielding properties and low reflection properties, an organic light emitting display device including the light shielding layer, and an electronic device including the organic light emitting display device.

Abstract: Various embodiments of the disclosure are directed to updating a selected group-based communication interface of a plurality of group-based communication interfaces with an application dialog received from an external application. In an example, user interaction data associated with a group-based communication system can be received from a client device, and a triggering event, associated with an application external to the group-based communication system, can be identified from within the user interaction data. An application dialog request, associated with the triggering event, can be sent to the application and, in response to sending the application dialog request to the application, an application dialog can be received from the application.

Abstract: A group-based communication platform can present, via a client device of the group-based communication platform, a user interface that includes a user interface element, interaction therewith, invoking a command associated with an external system. Based at partly on receiving an indication of an interaction with the user interface element, the group-based communication platform can cause payload data to be provided to the external system, wherein the payload data is associated with an indication of the command invoked via the interaction. Based at least partly on causing the payload data to be provided to the external system, a response to the payload data can be received and an interactive dialog can be presented via the user interface. The interactive dialog can be configured to prompt a user of the client device for data to be provided to the external system for performing a processing action associated with the command.

Abstract: A group-based communication platform is configured to initialize processing actions executable via validated external resources. Moreover, the group-based communication platform may recommend specific processing actions to a user based at least in part on the user's activity in interacting with the group-based communication platform (e.g., via a client device), wherein such activity may be represented as environmental contextual data. Moreover, once the user selects a particular processing action for execution, the group-based communication retrieves at least a portion of the generated environmental contextual data to be passed to the validated external resource for use in executing the selected processing action.

Abstract: A group-based communication platform can present, via a client device of the group-based communication platform, a user interface that includes a user interface element, interaction therewith, invoking a command associated with an external system. Based at partly on receiving an indication of an interaction with the user interface element, the group-based communication platform can cause payload data to be provided to the external system, wherein the payload data is associated with an indication of the command invoked via the interaction. Based at least partly on causing the payload data to be provided to the external system, a response to the payload data can be received and an interactive dialog can be presented via the user interface. The interactive dialog can be configured to prompt a user of the client device for data to be provided to the external system for performing a processing action associated with the command.

Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes word lines, bit lines intersecting the word lines, and memory cells coupled to and disposed between the word lines and the bit lines, each of the memory cells including a variable resistance layer in an amorphous state regardless of a value of data stored in the memory cells. In a reset operation, a memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is lower than a lowest threshold voltage among threshold voltages of the memory cells.

Abstract: A group-based communication platform can present, via a client device of the group-based communication platform, a user interface that includes a user interface element, interaction therewith, invoking a command associated with an external system. Based at partly on receiving an indication of an interaction with the user interface element, the group-based communication platform can cause payload data to be provided to the external system, wherein the payload data is associated with an indication of the command invoked via the interaction. Based at least partly on causing the payload data to be provided to the external system, a response to the payload data can be received and an interactive dialog can be presented via the user interface. The interactive dialog can be configured to prompt a user of the client device for data to be provided to the external system for performing a processing action associated with the command.

Abstract: Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a plurality of first lines; a plurality of second lines; a plurality of memory cells disposed in respective intersection regions between the plurality of first lines and the plurality of second lines; a first test circuit configured to apply a stress pulse to a first selection line coupled to a defective memory cell among the plurality of memory cells during a first test period, in response to a first test control signal, the first selection line including any one of the plurality of first lines; and a control unit configured to generate the first test control signal based on a first test mode signal.

Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes a word line, a bit line, and a memory cell coupled to and disposed between the word line and the bit line, the memory cell including a variable resistance layer that remains in an amorphous state regardless of a value of data stored in the memory cell. In a reset operation, the memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is greater than 0.7 time of a threshold voltage of the memory cell and is smaller than 0.95 time of the threshold voltage.

Abstract: A semiconductor memory includes: a first line; a second line spaced apart from the first line and extending in a first direction; a third line spaced apart from the second line and extending in a second direction; a first memory cell disposed between the first and second lines at an intersection region of the first and second lines, the first memory cell including a first selection element layer, a first electrode, and a first insert electrode interposed between the first selection element layer and the first electrode; and a second memory cell disposed between the second and third lines at an intersection region of the second and third lines, the second memory cell including a second selection element layer, a second electrode, and a second insert electrode interposed between the second selection element layer and the second electrode.

Abstract: A method drives an electronic device including a semiconductor memory in a test mode. The method includes applying a stress pulse simultaneously to a plurality of memory cells to turn on the plurality of memory cells, determining whether the memory cells are turned on or turned off, and applying a second maximum voltage to a selected memory cell of the plurality of memory cells only when the selected memory cell is determined to be in a turned-off state.