Abstract: A movable carrier device for vehicles including a rail section positioned in a vehicle floor, a storage section movable along the rail section, a magnetic section located in the storage section so as to be movable along the rail section, a locking unit fastened to the floor and the storage section to restrict the movement of the storage section, and a controller configured to control the locking unit such that the storage section and the locking unit are fastened to each other.

Abstract: A movable carrier device for vehicles including a rail section positioned in a vehicle floor, a storage section movable along the rail section, a magnetic section located in the storage section so as to be movable along the rail section, a locking unit fastened to the floor and the storage section to restrict the movement of the storage section, and a controller configured to control the locking unit such that the storage section and the locking unit are fastened to each other.

Abstract: The present disclosure provides a moving multi console for a vehicle, which is designed to be used in various applications in the confined interior space in a vehicle, and which includes a second console slidably and rotatably mounted on a floor panel, a first console slidably and rotatably coupled to the second console, and first and second guide shafts, which are fixed at lower ends thereof to the floor panel and are inserted at upper ends thereof into the second console and the first console so as to guide and support sliding movement and rotating movement of the second console and the first console.

Abstract: A half-movable console for a vehicle is provided. The half-movable console includes a base console fixedly mounted to a floor panel, a moving console coupled to a top of the base console such that the moving console is slidable in forward and rearward directions, and a protector disposed at a front side of the moving console while being mounted to the base console such that the protector is movable in the forward and rearward directions while being adjustable in tilting angle. In accordance with this configuration, the half-movable console is usable for various purposes within a limited passenger compartment in the vehicle.

Abstract: The present disclosure provides a moving multi console for a vehicle, which is designed to be used in various applications in the confined interior space in a vehicle, and which includes a second console slidably and rotatably mounted on a floor panel, a first console slidably and rotatably coupled to the second console, and first and second guide shafts, which are fixed at lower ends thereof to the floor panel and are inserted at upper ends thereof into the second console and the first console so as to guide and support sliding movement and rotating movement of the second console and the first console.

Abstract: A half-movable console for a vehicle is provided. The half-movable console includes a base console fixedly mounted to a floor panel, a moving console coupled to a top of the base console such that the moving console is slidable in forward and rearward directions, and a protector disposed at a front side of the moving console while being mounted to the base console such that the protector is movable in the forward and rearward directions while being adjustable in tilting angle. In accordance with this configuration, the half-movable console is usable for various purposes within a limited passenger compartment in the vehicle.

Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Abstract: A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the active region including the gate forming zone, such that the portion of the active region including the gate forming zone constitutes a fin pattern; a silicon epitaxial layer formed on the active region including the fin pattern; and a gate formed to cover the fin pattern on which the silicon epitaxial layer is formed.

Abstract: A process for manufacturing a semiconductor device using a spacer as an etch mask for forming a fine pattern is described. The process includes forming a hard mask layer over a target layer that is desired to be etched. A sacrificial layer pattern is subsequently formed over the hard mask layer. Spacers are formed on the sidewalls of the sacrificial layer pattern. The protective layer is formed on the hard mask layer portions between the sacrificial patterns formed with the spacer. The sacrificial layer pattern and the protective layer are then later removed, respectively. The hard mask layer is etched using the spacer as an etching mask. After etching, the spacer is removed. Finally, the target layer is etched using the etched hard mask as an etching mask.

Abstract: A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.

Abstract: A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the active region including the gate forming zone, such that the portion of the active region including the gate forming zone constitutes a fin pattern; a silicon epitaxial layer formed on the active region including the fin pattern; and a gate formed to cover the fin pattern on which the silicon epitaxial layer is formed.

Abstract: An isolation structure of a semiconductor device is formed by forming a hard mask layer on a semiconductor substrate having active and field regions to expose the field region. A trench is defined by etching the exposed field region of the semiconductor substrate using the hard mask as an etch mask. An SOG layer is formed in the trench partially filling the trench. An amorphous aluminum oxide layer is formed on the resultant substrate including the SOG layer. An HDP layer is formed on the amorphous aluminum oxide layer to completely fill the trench. The HDP layer and the amorphous aluminum oxide layer are subjected to CMP to expose the hard mask. The hard mask and portions of the amorphous aluminum oxide layer that are formed on the HDP layer are removed. The amorphous aluminum oxide layer is crystallized.

Abstract: A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the active region including the gate forming zone, such that the portion of the active region including the gate forming zone constitutes a fin pattern; a silicon epitaxial layer formed on the active region including the fin pattern; and a gate formed to cover the fin pattern on which the silicon epitaxial layer is formed.

Abstract: A method for manufacturing a semiconductor device is disclosed. The method includes the steps of defining a trench into a field region of a semiconductor substrate having an active region and the field region; partially filing the trench with a flowable insulation layer; completely filling the trench with an isolation structure by depositing a close-packed insulation layer on the flowable insulation layer in the trench; etching through a portion of the close-packed insulation layer and etching into a partial thickness of the flowable insulation layer of the insulation structure to expose a portion of the active region; cleaning the resultant substrate having the active region relatively projected; forming spacers on etched portions of the flowable insulation layer where bowing occurs during the cleaning step; and forming gates on the active region and the insulation structure to border the exposed portion of the active region.

Abstract: The semiconductor device having an air gap includes an insulation layer formed on a semiconductor substrate and having a metal line forming region. A metal line is formed to fill the metal line forming region of the insulation layer. An air gap is formed between the insulation layer and the metal line.

Abstract: An isolation structure of a semiconductor device is formed by forming a hard mask layer on a semiconductor substrate having active and field regions to expose the field region. A trench is defined by etching the exposed field region of the semiconductor substrate using the hard mask as an etch mask. An SOG layer is formed in the trench partially filling the trench. An amorphous aluminum oxide layer is formed on the resultant substrate including the SOG layer. An HDP layer is formed on the amorphous aluminum oxide layer to completely fill the trench. The HDP layer and the amorphous aluminum oxide layer are subjected to CMP to expose the hard mask. The hard mask and portions of the amorphous aluminum oxide layer that are formed on the HDP layer are removed. The amorphous aluminum oxide layer is crystallized.