Abstract: A semiconductor thin film using a self-assembled monolayer (SAM) and a method for producing the semiconductor thin film are provided. According to the semiconductor thin film, a uniform inorganic seed layer is formed by using the self-assembled monolayer so that the adhesion between an insulating layer and a semiconductor layer is enhanced and thus the surface tension is reduced, thereby allowing the semiconductor thin film to have high quality without defects.

Abstract: Disclosed therein is apparatus and method for in-situ calibration of a vacuum gauge by absolute method and comparison method, which can carry out absolute calibration using a static type standard for measuring pressures of vacuum chambers by expanding and moving gas to the vacuum chambers of different volumes in order and comparison calibration of vacuum gauges in an in-situ state without movement of the vacuum gauges according to a method for controlling gas flow through an orifice using a calibrated standard vacuum gauge. The present invention includes a technology for combining an absolute calibration of a standard vacuum gauge by a static method and a comparative calibration of a vacuum gauge by a method for controlling a gas flow through an orifice, technologies for generating and calibrating standard pressure from a low vacuum to a high vacuum, and a technology of comparative calibration of the vacuum gauge by a method for stabilizing the gas flow through the orifice.

Abstract: A porous chalcogenide thin film having a microporous structure, a method for preparing the chalcogenide thin film and an electronic device employing the chalcogenide thin film, are provided. The porous chalcogenide thin film has superior crystallinity and can be applied as a semiconductor layer having superior electrical properties to the fabrication of devices by inserting functional metal or semiconductor nanoparticles into nanopores of the thin film.

Abstract: A display device includes a display panel having a first substrate and a second substrate opposite to the first substrate; a transparent film formed on the second substrate; and a buffer layer formed between the second substrate and the transparent film.

Abstract: A method of forming a trench type isolation film of a semiconductor device, including the steps of sequentially forming a pad oxide film and a nitride film for a hard mask on a semiconductor substrate in which a cell region and a peri region are defined; patterning the nitride film using an etch process employing a cell array mask; coating a photoresist on the entire structure including the patterned nitride film; patterning the photoresist using a peri ISO mask; sequentially etching the nitride film, the pad oxide film, and the semiconductor substrate using the patterned photoresist as an etch mask, thereby forming first trenches; stripping the photoresist; etching the semiconductor substrate of the cell region and the peri region using the patterned nitride film as an etch mask, thereby forming second trenches in the cell region and third trenches, which are consecutive to the first trenches, in the peri region; and, forming an isolation film within the second and third trenches.

Abstract: The present invention relates to a method of fabricating a flash memory device. The width of an active region (line) is reduced, but the width of a field region (space) is extended. An overlay margin between the floating gates and the active region depending upon increase in the level of integration of a device can be improved. A channel is formed not only an active region but also sidewalls of trenches at both sides of the active region, thus extending an effective channel length. It is thus possible to compensate for a reduction in the cell current depending upon a reduction of the width of the active region (line).

Abstract: A composition for forming a low-dielectric constant film comprising a substituted fullerene, a low-dielectric constant film formed from the composition, and a method for forming the low-dielectric constant film are provided. The low-dielectric constant film has superior mechanical properties, such as hardness and elastic modulus, and excellent thermal conductivity.

Abstract: Disclosed herein is a composition for forming a low dielectric thin film, which includes silane monomers having only any one of stereoisomer, or a siloxane polymer produced by polymerizing the monomers, and a method of producing the low dielectric thin film using the same. When using the composition, mechanical properties are excellent because tacticity of a matrix is improved, and formation of pores is increased due to a molecular free volume, thus it is possible to produce a low dielectric thin film having low dielectricity.

Abstract: A composition for forming a low dielectric thin film, which includes a silane polymer, polymer nanoparticles, a porogen and an organic solvent, and a method of preparing a low dielectric thin film using the same. The low dielectric thin film prepared using the composition of this disclosure has a low dielectric constant and excellent mechanical strength. As well, the polymer nanoparticles in the low dielectric thin film have a uniform diameter and are soft, and thus are advantageously applied to a chemical-mechanical polishing process.

Abstract: A composition for forming a low dielectric thin film, which includes a silane polymer, porous nanoparticles and an organic solvent, and a method of preparing a low dielectric thin film using the same. The low dielectric thin film prepared using the composition of the current invention may exhibit a low dielectric constant and excellent mechanical strength, and thus may be applied to conductive materials, display materials, chemical sensors, biocatalysts, insulators, packaging materials, etc.

Abstract: A siloxane-based polymer having superior mechanical properties and low dielectric properties and a method for forming a dielectric film using the polymer. The siloxane-based polymer not only has superior mechanical properties, but also exhibits low hygroscopicity and good compatibility with pore-forming materials, which leads to a low dielectric constant. In addition, since the siloxane-based polymer is highly compatible with pore-forming materials and has improved applicability to semiconductor processes, it may be advantageously used as a material for dielectric films of semiconductor devices.

Abstract: The present invention discloses a device for measuring and monitoring electron density of plasma. The device includes a chamber filled with plasma having varying electron density; a frequency probe having transmission/receiving antennas and a pair of waveguides, one end of which is mounted in the chamber, for radiating and receiving electromagnetic waves; an electromagnetic wave generator electrically connected to one of the waveguides of the frequency probe for generating electromagnetic waves; and a frequency analyzer for scanning the frequency of received electromagnetic waves and analyzing the scanned frequency with respect to the amplitude of the received electromagnetic waves. Coupled to the rear end of the frequency probe is preferably a transfer unit having a hydraulic cylinder structure such that the frequency probe is moved in the chamber to detect the spatial distribution of electron density.

Abstract: A method of producing a porous low dielectric thin film is provided. The method comprises conducting hydrolysis and polycondensation of a polyreactive cyclic siloxane compound alone or in conjunction with one or more types of linear siloxane compounds or in conjunction with a Si monomer having an organic leg in the presence of water, organic hydroxide, and an organic solvent to produce a siloxane-based polymer, dissolving the polymer in water or the organic solvent to produce a coating solution, applying the coating solution on a substrate, and heat curing the resulting substrate. Even though a pore forming material is not used, it is possible to produce a porous low dielectric thin film.

Abstract: A method of preparing a mesoporous thin film having a low dielectric constant, which includes mixing a cyclic siloxane-based monomer, an organic solvent, an acid catalyst or a base catalyst, and water, to prepare a coating solution, which is then applied on a substrate and heat cured. The mesoporous thin film of the current invention may exhibit excellent physical properties including hardness and elastic modulus, and may have a low dielectric constant of 2.5 or less, and thus, may be used to manufacture semiconductors.

Abstract: A method for preparing a dielectric film. According to the method, a dielectric film is prepared by depositing a dual organic siloxane precursor on a wafer by plasma enhanced chemical vapor deposition (PECVD). Since a dielectric film prepared by the method has a low dielectric constant and shows superior physical properties, such as elastic modulus and hardness, it can be useful as an interlayer dielectric film for a semiconductor device for dual damascene copper interconnects or as a passivation layer for semiconductor and display devices.

Abstract: A method for preparing a surfactant-templated, mesoporous low dielectric film by mixing a siloxane-based polymer or oligomer, a surfactant and an organic solvent to prepare a coating solution, coating a substrate with the coating solution, and heat-curing the coated substrate. By the method, a thin film having a low dielectric constant and showing superior mechanical properties, such as hardness and modulus, can be prepared. Therefore, the low dielectric thin film can be applied to conductive materials, display materials, chemical sensors, biocatalysts, insulators, and packaging materials.

Abstract: Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane. According to the method, the polyhedral molecular silsesquioxane is used as a monomer for a siloxane-based resin or as a pore-forming agent (porogen) to prepare a composition for forming a dielectric film, and the composition is coated on a substrate to form an interlayer dielectric film for a semiconductor device. The interlayer dielectric film formed by the method has a low dielectric constant and shows superior mechanical properties.

Abstract: The present invention relates to a method for manufacturing a flash device. After a gate electrode for a flash device is formed, an EFH of an isolation film is reduced through a predetermined etch process. It is therefore possible to reduce the step of a barrier film for protecting an isolation film. Moreover, by reducing the step of the barrier film, it is possible to prevent a condition that a contact is not opened due to the step of the barrier film upon formation of a source line contact and a drain contact. Furthermore, it is possible to sufficiently reduce an EFH of an isolation film through a sufficient etch using a mask through which only a cell region is opened.

Abstract: A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant.

Abstract: A multi-functional cyclic silicate compound, a siloxane-based polymer prepared from the silicate compound and a process of producing an insulating film using the siloxane-based polymer. The silicate compound of the present invention is highly compatible with conventional pore-generating substances and hardly hygroscopic, so it is useful for the preparation of a siloxane-based polymer suitable to a SOG process. Furthermore, a film produced by the use of such siloxane-based polymer is excellent in mechanical properties, thermal stability and crack resistance and enhanced in insulating properties by virtue of its low hygroscopicity. Therefore, in the field of semiconductor production, this film is of great use as an insulating film.