Abstract: An electrode insulating coating composition according to the present invention includes boehmite particles, a dispersant, a binder, and a solvent, wherein the dispersant includes two or more fatty acid compounds, and is included in an amount of 1.2 to 8.8 parts by weight with respect to 100 parts by weight of the boehmite particles.

Abstract: A control method of valve opening and closing for an engine of which an intake continuous variable valve duration (CVVD) apparatus and an intake continuous variable valve timing (CVVT) apparatus are provided on the intake side, and an exhaust continuous variable valve duration (CVVD) apparatus and an exhaust continuous variable valve timing (CVVT) apparatus are provided on the exhaust side. The control method includes: determining, by a controller, a driving region among a predetermined plurality of driving regions according to a speed and a torque of the engine; and controlling, by the controller, opening timing, closing timing, and opening duration of each of an intake valve and an exhaust valve according to the driving region of the engine. The intake valve closing (IVC) timing is before a bottom dead center (BDC) in all driving regions.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A continuous variable valve duration apparatus includes: a camshaft, a front cam unit and a rear cam unit of which the phase relative to the camshaft can be varied, a front inner wheel and a rear inner wheel, a front guide bracket and a rear guide bracket, a front wheel housing and a rear wheel housing, a front control shaft, a rear control shaft, a phase controller selectively changing the relative phase of the front control shaft and the rear control shaft, a main driving unit for driving the rear control shaft, vibration sensors that measure the vibration of each cylinder corresponding to the front cam unit and the rear cam unit and output a corresponding signal, and a controller for controlling the operation of the main driving unit and the phase controller according to the output signals of the respective vibration sensors.

Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.

Abstract: A display device includes a pixel including a display driver configured to apply a driving current to a light-emitting element; and an optical sensor including a sensing driver configured to apply a sensing current to a read-out line based on a photocurrent from the photoelectric conversion element, wherein the pixel further includes, a driving transistor configured to control the driving current, a first transistor configured to apply a first initialization voltage to an anode of the light-emitting element based on an emission control signal, and a second transistor configured to connect the anode of the light-emitting element to a first electrode of the driving transistor in accordance with the emission control signal, and wherein a channel of the first transistor is a different material from channels of the driving transistor and the second transistor.

Abstract: A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.

Abstract: A display device includes a substrate, and unit pixels provided in the substrate, and including sub-pixels each having a light-emitting element emitting light, and photo-sensing pixels each having a light-receiving element outputting a sensing signal corresponding to the light. Each of the sub-pixels may include an emission area emitting the light, and each of the photo-sensing pixels may include a light-receiving area receiving the light. The emission area and the light-receiving area may be provided in the substrate to be spaced apart from each other. Each of the emission area and the light-receiving area may have a shape of a quadrangular plane.

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

Abstract: An exemplary embodiment of the present inventive concept provides a display device including: a substrate; a plurality of first wires extending along a first direction on the substrate; a first insulating layer disposed on the plurality of first wires; a plurality of second wires disposed on the first insulating layer and extending along a second direction crossing the first direction; a second insulating layer disposed on the plurality of second wires; and a plurality of pixel electrodes disposed on the second insulating layer, wherein the second insulating layer includes a first opening which is disposed between the plurality of pixel electrodes.

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

Abstract: A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

Abstract: A display device includes a substrate, a semiconductor layer on the substrate, a first insulating layer on the semiconductor layer, a first conductive layer on the semiconductor layer, a second insulating layer on the first conductive layer, a first contact hole penetrating the first insulating layer and the second insulating layer, a second conductive layer on the second insulating layer, connected to the semiconductor layer through the first contact hole, and including a hydrogen barrier material, and a third insulating layer on the second conductive layer.