Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: According to an embodiment of the disclosure, a display device is provided. The display device includes a base layer including a display area and a peripheral area, a light emitting element disposed in the display area and including a first electrode, a second electrode, and a light emitting part disposed between the first electrode and the second electrode, an electrode disconnection member disposed in the peripheral area, and an electrode portion disposed adjacent to the electrode disconnection member. The electrode disconnection member includes a reverse-taper member surrounding an area in a plan view. The reverse-taper member includes an inner edge facing the area. The electrode portion includes a first electrode portion disposed in the area and a second electrode portion disposed on an upper surface of the reverse-taper member along the inner edge. The first electrode portion and the second electrode portion are physically spaced apart from each other.

Abstract: A display device and a method of fabricating the same are provided. The display device comprises a substrate, a transistor disposed on the substrate, a via layer disposed over the transistor and including a contact hole extending to the transistor, a pixel electrode disposed on the via layer and connected to the transistor through the contact hole, a first bank layer disposed on the pixel electrode and extending in a first direction, and a second bank layer extended in a second direction crossing the first direction, a light emitting layer disposed on the pixel electrode, and a common electrode disposed on the light emitting layer, wherein the second bank layer comprises a first region that does not overlap the contact hole and a second region that overlaps the contact hole, and wherein a width of the second region is greater than a width of the first region.

Abstract: A display device includes a first substrate including an emission area and a non-emission area; a first pixel electrode positioned on the emission area of the first substrate; a first light emitting structure positioned on the first pixel electrode and including quantum dots; a pixel defining layer positioned on the non-emission area of the first substrate and positioned on the first pixel electrode; a common electrode covering the first light emitting structure and the pixel defining layer; and an encapsulation structure positioned on the common electrode and in contact with the common electrode such that the encapsulation structure overlaps the non-emission area. The encapsulation structure may include a second substrate and a hydrogen donor layer positioned between the second substrate and the common electrode. The hydrogen donor layer may overlap the emission area and may be in contact with or spaced apart from the common electrode.

Abstract: A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.

Abstract: A design for a scan driver and a display device including the scan driver that is more resilient to electrostatic discharge. Thin film transistors within a stage are designed differently depending on whether or not a gate of the transistor is connected to an external source. Transistors whose gate is connected to an external source is specially designed to withstand electrostatic discharge applied to the gate thereof by one or more of increasing a number of channel areas, decreasing a length of an ohmic bridge, including a resistive element to the gate, decreasing a width of a channel areas, and increasing a width of the active layer.

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

Abstract: A design for a scan driver and a display device including the scan driver that is more resilient to electrostatic discharge. Thin film transistors within a stage are designed differently depending on whether or not a gate of the transistor is connected to an external source. Transistors whose gate is connected to an external source is specially designed to withstand electrostatic discharge applied to the gate thereof by one or more of increasing a number of channel areas, decreasing a length of an ohmic bridge, including a resistive element to the gate, decreasing a width of a channel areas, and increasing a width of the active layer.

Abstract: An exemplary embodiment of the present inventive concept provides a display device including: a substrate; a plurality of first wires extending along a first direction on the substrate; a first insulating layer disposed on the plurality of first wires; a plurality of second wires disposed on the first insulating layer and extending along a second direction crossing the first direction; a second insulating layer disposed on the plurality of second wires; and a plurality of pixel electrodes disposed on the second insulating layer, wherein the second insulating layer includes a first opening which is disposed between the plurality of pixel electrodes.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.

Abstract: A display device includes a pixel including a display driver configured to apply a driving current to a light-emitting element; and an optical sensor including a sensing driver configured to apply a sensing current to a read-out line based on a photocurrent from the photoelectric conversion element, wherein the pixel further includes, a driving transistor configured to control the driving current, a first transistor configured to apply a first initialization voltage to an anode of the light-emitting element based on an emission control signal, and a second transistor configured to connect the anode of the light-emitting element to a first electrode of the driving transistor in accordance with the emission control signal, and wherein a channel of the first transistor is a different material from channels of the driving transistor and the second transistor.

Abstract: A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.

Abstract: A display device includes a substrate, and unit pixels provided in the substrate, and including sub-pixels each having a light-emitting element emitting light, and photo-sensing pixels each having a light-receiving element outputting a sensing signal corresponding to the light. Each of the sub-pixels may include an emission area emitting the light, and each of the photo-sensing pixels may include a light-receiving area receiving the light. The emission area and the light-receiving area may be provided in the substrate to be spaced apart from each other. Each of the emission area and the light-receiving area may have a shape of a quadrangular plane.

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

Abstract: An exemplary embodiment of the present inventive concept provides a display device including: a substrate; a plurality of first wires extending along a first direction on the substrate; a first insulating layer disposed on the plurality of first wires; a plurality of second wires disposed on the first insulating layer and extending along a second direction crossing the first direction; a second insulating layer disposed on the plurality of second wires; and a plurality of pixel electrodes disposed on the second insulating layer, wherein the second insulating layer includes a first opening which is disposed between the plurality of pixel electrodes.

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.